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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Neutron and X-ray investigations of the Jahn–Teller switch in partially deuterated ammonium copper Tutton salt, (NH 4 ) 2 [Cu(H 2 O) 6 ](SO 4 ) 2

The structural phase transition accompanied by a Jahn–Teller switch has been studied over a range of H/D ratios in (NH 4 ) 2 [Cu(H 2 O) 6 ](SO 4 ) 2 (ACTS). In particular, single-crystal neutron diffraction investigations of crystals with deuteration in the range 50 to 82% are shown to be consistent with previous electron paramagnetic resonance (EPR) experiments exhibiting a phase boundary at 50% deuteration under ambient pressure. Polycrystalline samples show that the two phases can co-exist. In addition, single-crystal neutron and polycrystalline X-ray diffraction pressure experiments show a shift to lower pressure at 60% deuteration versus previous measurements at 100% deuteration.

deuterium isotope phase transition↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗
DOE OSTI2017

A single mutation in Taiwanese H6N1 influenza hemagglutinin switches binding to human‐type receptors

Abstract In June 2013, the first case of human infection with an avian H6N1 virus was reported in a Taiwanese woman. Although this was a single non‐fatal case, the virus continues to circulate in Taiwanese poultry. As with any emerging avian virus that infects humans, there is concern that acquisition of human‐type receptor specificity could enable transmission in the human population. Despite mutations in the receptor‐binding pocket of the human H6N1 isolate, it has retained avian‐type (NeuAcα2‐3Gal) receptor specificity. However, we show here that a single nucleotide substitution, resulting in a change from Gly to Asp at position 225 (G225D), completely switches specificity to human‐type (NeuAcα2‐6Gal) receptors. Significantly, G225D H6 loses binding to chicken trachea epithelium and is now able to bind to human tracheal tissue. Structural analysis reveals that Asp225 directly interacts with the penultimate Gal of the human‐type receptor, stabilizing human receptor binding.

de Vries, Robert P.↗
NASA NTRS1967

Hybrid solid state switch replaces motor- driven power switch

Hybrid solid state switch replaces existing motor-driven power switches used on spacecraft. It uses a transistor circuit to limit the open circuit voltage and allow small relay contacts to handle high transient currents at reasonable cycle life.

Booth, R. A.↗
NASA NTRS1993

Characteristics of switching plasma in an inverse-pinch switch

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

Lee, Ja H.↗
NASA NTRS2002

MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters

Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.

Scardelletti, Maximilian C.↗
DOE OSTI2018

Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.

Frolov, Daniil↗
DOE OSTI2016

Investigation of a gain-switched Cr{sup 2+}:ZnSe laser pumped by an acousto-optic Q-switched Ho : YAG laser

We demonstrate a gain-switched Cr{sup 2+}:ZnSe laser pumped by a high energy Ho : YAG laser. The maximum output power of 5.5 W in the spectrum range from 2450 nm to 2570 nm is obtained at a pulse repetition rate of 2 kHz, corresponding to a pulse energy of 2.75 mJ. With a volume Bragg grating (VBG) for compressing the linewidth, a 2.4 W output power with a narrow linewidth (<1 nm) is obtained at 2570.5 nm. The pulse shapes obtained at different pump energies are also studied and analysed. A minimum pulse width of ∼28.5 ns is achieved at a pump energy of 14.6 mJ, corresponding to a peak power of ∼96.5 kW. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2017

Switch-off slow shock/rotational discontinuity structures in collisionless magnetic reconnection: What to look for in satellite observations: SWITCH-OFF STRUCTURES IN RECONNECTION

In Innocenti et al. (2015) we have observed and characterized for the first time Petschek-like switch-off slow shock/rotational discontinuity (SO-SS/RD) compound structures in a 2-D fully kinetic simulation of collisionless magnetic reconnection. Observing these structures in the solar wind or in the magnetotail would corroborate the possibility that Petschek exhausts develop in collisionless media as a result of single X point collisionless reconnection. Here we highlight their signatures in simulations with the aim of easing their identification in observations. The most notable signatures include a four-peaked ion current profile in the out-of-plane direction, associated ion distribution functions, increased electron and ion anisotropy downstream the SS, and increased electron agyrotropy downstream the RDs.

58 GEOSCIENCES↗
DOE OSTI2021

Submonolayer Is Enough: Switching Reaction Channels on Pt/SiO 2 by Atomic Layer Deposition

The reaction mechanism of CO 2 with H 2 is studied on platinum nanoparticles supported on fumed silica. It is found that platinum nanoparticle size, reaction temperature, and metal oxide promoters play important roles in determining the reaction rate and the mechanism of forming surface carbonyl species. Metal oxide promoters consist of sub-monolayer titanium oxide or aluminum oxide overcoated onto the catalysts by atomic layer deposition (ALD). Furthermore, these alter the CO formation rate, influence the adsorption and desorption behavior, and switch the surface reaction channel from Eley-Rideal to Langmuir-Hinshelwood mechanism due to an enhancement of CO 2 affinity to the metal-metal oxide interface. At the temperatures relevant for catalytic turnover, ALD overcoating significantly increases catalytic activity in CO 2 hydrogenation to CH 4 and CO, while the identity of the oxide overcoat helps control product selectivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

H-treatment impact on conductive-filament formation and stability in Ta{sub 2}O{sub 5}-based resistive-switching memory cells

In this article, we evidence the lower formation energy and improved stability of the conductive filament (CF) formed in TiN\Ta{sub 2}O{sub 5}\Ta resistive-switching memory cells treated in NH{sub 3} atmosphere at 400 °C. This annealing treatment results in (i) lower forming voltage, (ii) lower CF resistance, and (iii) longer retention lifetime of the oxygen-vacancy (V{sub o}) chain constituting the CF. Atomistic insights into these processes are provided by ab initio calculations performed for hydrogen (H) species incorporated in non-stoichiometric Ta{sub 2}O{sub 5} supercells: (i) V{sub o} formation energy is reduced by the presence of H, (ii) V{sub o}-chain CF conductivity is increased by V{sub o} + OH complex formation, and (iii) V{sub o}-chain retention is strengthened by the stable V{sub o} + OH complex. As a result, efficient CF formation and excellent state stability are obtained after 15 days at 250 °C.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Evaluation report for toggle switches: Micro Switch and Cutler-Hammer models per MIL-S-3950

Several models of hermetically sealed toggle switches meeting the requirements of MIL-S-3950, were evaluated to determine the probability that they would withstand the environmental requirements of, and therefore be suitable for use on, the space shuttle vehicle. The evaluation was started with a comparison of the environmental requirements for space shuttle hardware. This was followed with in-house testing for those environments where a reasonably firm conclusion could not be drawn in the comparison. Space simulation, acceleration, and vibration testing were performed in-house.

Labberton, D.↗
NASA NTRS1979

Characterization of the Q-switched MOBLAS Laser Transmitter and Its Ranging Performance Relative to a PTM Q-switched System

A prototype Q-switched Nd:YAG laser transmitter intended for use in the NASA mobile laser ranging system was subjected to various tests of temporal pulse shape and stability, output energy and stability, beam divergence, and range bias errors. Peak to peak variations in the mean range were as large as 30 cm and drift rates of system bias with time as large as 6 mm per minute of operation were observed. The incorporation of a fast electro-optic cavity dump into the oscillator gave significantly improved results. Reevaluation of the ranging performance after modification showed a reduction in the peak to peak variation in the mean range to the 2 or 3 cm level and a drift rate of system time biases of less than 1 mm per minute of operation. A qualitative physical explanation for the superior performance of cavity dumped lasers is given.

Degnan, J. J., III↗