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At least 73 records · Page 4

Controlling structural phases of Sn through lattice engineering

Topology and superconductivity, two distinct phenomena, offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies. Tin (Sn) plays a pivotal role here as an element because of its two structural phases, α-Sn exhibiting topological characteristics and β-Sn showing superconductivity. Here, we demonstrate precise control of these phases in Sn thin films using molecular beam epitaxy with systematically varied lattice parameters of the buffer layer. The Sn films exhibit either β-Sn or α-Sn phases as the buffer layer's lattice constant varies from 6.10 Å to 6.48 Å, spanning the range from GaSb (like InAs) to InSb. Further, the crystal structures of α- and β-Sn films are characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. Atomic force microscopy validates the smooth, continuous surface morphology. Electrical transport measurements further verify the phases: resistance drop near 3.7 K for β-Sn superconductivity and Shubnikov-de Haas oscillations for α-Sn topological characteristics. Density functional theory shows that α-Sn is stable under tensile strain and β-Sn under compressive strain, aligning well with experimental findings. Hence, this study introduces a platform controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.

36 MATERIALS SCIENCE↗

Materials Data on Sn(TePd3)2 by Materials Project

Sn(Pd3Te)2 crystallizes in the tetragonal I4mm space group. The structure is three-dimensional. there are six inequivalent Pd sites. In the first Pd site, Pd is bonded to eight Pd, two equivalent Sn, and two equivalent Te atoms to form distorted PdSn2Te2Pd8 cuboctahedra that share corners with four equivalent PdSn2Te2Pd8 cuboctahedra, edges with four equivalent PdSn4Pd8 cuboctahedra, edges with four equivalent SnPd12 cuboctahedra, faces with two equivalent SnPd12 cuboctahedra, and faces with ten PdSn2Te2Pd8 cuboctahedra. There are a spread of Pd–Pd bond distances ranging from 2.85–3.00 Å. Both Pd–Sn bond lengths are 2.83 Å. Both Pd–Te bond lengths are 2.76 Å. In the second Pd site, Pd is bonded in a 10-coordinate geometry to six Pd, two equivalent Sn, and two equivalent Te atoms. There are two shorter (2.85 Å) and four longer (2.89 Å) Pd–Pd bond lengths. Both Pd–Sn bond lengths are 2.87 Å. Both Pd–Te bond lengths are 2.66 Å. In the third Pd site, Pd is bonded in a 10-coordinate geometry to six Pd, two equivalent Sn, and two equivalent Te atoms. Both Pd–Pd bond lengths are 2.85 Å. Both Pd–Sn bond lengths are 2.87 Å. Both Pd–Te bond lengths are 2.66 Å. In the fourth Pd site, Pd is bonded to eight Pd and four equivalent Sn atoms to form PdSn4Pd8 cuboctahedra that share corners with four equivalent PdSn4Pd8 cuboctahedra, edges with eight equivalent PdSn2Te2Pd8 cuboctahedra, faces with four equivalent SnPd12 cuboctahedra, and faces with eight PdSn2Te2Pd8 cuboctahedra. All Pd–Sn bond lengths are 2.89 Å. In the fifth Pd site, Pd is bonded in a 5-coordinate geometry to four equivalent Pd and five Te atoms. There are one shorter (2.63 Å) and four longer (2.91 Å) Pd–Te bond lengths. In the sixth Pd site, Pd is bonded in a 10-coordinate geometry to six Pd, two equivalent Sn, and two equivalent Te atoms. There are two shorter (2.85 Å) and four longer (2.89 Å) Pd–Pd bond lengths. Both Pd–Sn bond lengths are 2.87 Å. Both Pd–Te bond lengths are 2.66 Å. Sn is bonded to twelve Pd atoms to form SnPd12 cuboctahedra that share corners with four equivalent SnPd12 cuboctahedra, edges with eight equivalent PdSn2Te2Pd8 cuboctahedra, faces with four equivalent SnPd12 cuboctahedra, and faces with eight PdSn2Te2Pd8 cuboctahedra. There are two inequivalent Te sites. In the first Te site, Te is bonded in a 5-coordinate geometry to five Pd atoms. In the second Te site, Te is bonded in a 8-coordinate geometry to eight Pd atoms.

36 MATERIALS SCIENCE↗

How additives for tin halide perovskites influence the Sn 4+ concentration

Tin halide perovskite (Sn-HPs) photovoltaics could potentially equal or exceed the performance of their more toxic Pb-based analogues if defect state densities, particularly originating from the presence of Sn 4+ , can be significantly decreased. Numerous additives are incorporated into Sn-HPs to minimize the amount of Sn 4+ , including SnF 2 , reducing agents such as hydrazine derivatives, and various antioxidants. However, despite the frequent use of additives to reduce Sn 4+ content, there is limited understanding of how they function and consequently limited guidance for the development of new additives. Herein, we use cyclic voltammetry to probe the redox behavior of SnI 2 , SnI 4 , Sn-HP precursor solutions, and 18 different additives. Through 119 Sn NMR measurements we show that hydrochloride containing additives undergo halide exchange with SnI 4 to form SnI x Cl y , which results in decreased Sn 4+ concentrations and less p-type character in the Sn-HP films. We find that the most effective additive at lowering the Sn 4+ content in FASnI 3 is not capable of reducing SnI 4 or forming SnI x Cl y , but rather it acts as a sacrificial and coordinating antioxidant. In general, when selecting additives for Sn-HPs it is important to account for the redox potential, coordination with Sn species, ability to react with oxygen, and the potential for halide exchange.

36 MATERIALS SCIENCE↗

Tiny Sc Allows the Chains to Rattle: Impact of Lu and Y Doping on the Charge-Density Wave in ScV 6 Sn 6

The kagome metals display an intriguing variety of electronic and magnetic phases arising from the connectivity of atoms on a kagome lattice. A growing number of these materials with vanadium–kagome nets host charge–density waves (CDWs) at low temperatures, including ScV 6 Sn 6 , CsV 3 Sb 5 , and V 3 Sb 2 . Curiously, only the Sc version of the RV 6 Sn 6 materials with a HfFe 6 Ge 6 -type structure hosts a CDW (R = Gd–Lu, Y, Sc). In this study, we investigate the role of rare earth size in CDW formation in the RV 6 Sn 6 compounds. Magnetization measurements on our single crystals of (Sc,Lu)V 6 Sn 6 and (Sc,Y)V 6 Sn 6 establish that the CDW is suppressed by substituting Sc by larger Lu or Y. Single-crystal X-ray diffraction reveals that compressible Sn–Sn bonds accommodate the larger rare earth atoms within loosely packed R–Sn–Sn chains without significantly expanding the lattice. We propose that Sc provides extra room in these chains crucial to CDW formation in ScV 6 Sn 6 . Our rattling chain model explains why both physical pressure and substitution by larger rare earth atoms hinder CDW formation despite opposite impacts on lattice size. Here, we emphasize the cooperative effect of pressure and rare earth size by demonstrating that pressure further suppresses the CDW in a Lu-doped ScV 6 Sn 6 crystal. Our model not only addresses why a CDW only forms in the RV 6 Sn 6 materials with tiny Sc but also advances our understanding of why unusual CDWs form in the kagome metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Smooth, homogeneous, high-purity Nb 3 Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Abstract Workbench-size particle accelerators, enabled by Nb 3 Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and x-rays. Thin-film Nb 3 Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb 3 Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb 3 Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb 3 Sn by five times compared to typical vapor-diffused Nb 3 Sn. Quantitative mappings using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb 3 Sn. We have successfully applied this Nb 3 Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb 3 Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations.

Physics↗

Effect of layer thickness on structural, morphological and superconducting properties of Nb 3 Sn films fabricated by multilayer sequential sputtering

Superconducting Nb3Sn films can be synthesized by controlling atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films where Sn composition of deposited films can be controlled by controlling the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates with ex-situ annealing at 950 °C for 3 h. We have investigated the effect of Nb and Sn layer thickness on the properties of Nb3Sn films. The thicknesses of Nb and Sn layers were varied in two ways: (1) varied Nb:Sn thickness ratio (1:1, 2:1, 3:1, 4:1), and (2) varied layer thickness of both Nb and Sn layers, while keeping constant Nb:Sn thickness ratio of 2:1. The crystal structure, surface morphology, topography, and film composition were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS) respectively. The results showed Sn loss from the surface due to evaporation during annealing. Superconducting Nb3Sn films of critical temperature up to 17.93 K have been achieved.

Sayeed, M. N.↗

Degradation-resistant TiO 2 @Sn anodes for high-capacity lithium-ion batteries

As the demand for higher-performance batteries has increased, so has the body of research on theoretical high-capacity anode materials. However, the research has been hindered because the high-capacity anode material properties and interactions are not well understood, largely due to the difficulty of observing cycling in situ. Using electrochemical scanning transmission electron microscopy (ec-STEM), we report the real-time observation and electrochemical analysis of pristine tin (Sn) and titanium dioxide-coated Sn (TiO 2 @Sn) electrodes during lithiation/delithiation. As expected, we observed a volume expansion of the pristine Sn electrodes during lithiation, but we further observed that the expansion was followed by Sn detachment from the current collector. Remarkably, although the TiO 2 @Sn electrodes also exhibited similar volume expansion during lithiation, they showed no evidence of Sn detachment. We found that the TiO 2 surface layer acted as an electrochemically activated artificial solid-electrolyte interphase that serves to conduct Li ions. As a physical coating, it mechanically prevented Sn detachment following volume changes during cycling, providing significant degradation resistance and 80% Coulombic efficiency for a complete lithiation/delithiation cycle. Interestingly, upon delithiation, TiO 2 @Sn electrode displayed a self-healing mechanism of small pore formation in the Sn particle followed by agglomeration into several larger pores as delithiation continued.

25 ENERGY STORAGE↗

Neutron transfer reactions on the ground state and isomeric state of a 130 Sn beam

The structure of nuclei around the neutron-rich nucleus 132 Sn is of particular interest due to the vicinity of the Z = 50 and N = 82 shell closures and the r-process nucleosynthetic path. Four states in 131 Sn with a strong single-particle-like component have previously been studied via the (d,p) reaction, with limited excitation energy resolution. Here, the 130 Sn( 9 Be, 8 Be) 131 Sn and 130 Sn( 13 C, 12 C) 131 Sn single-neutron transfer reactions were performed in inverse kinematics at the Holifield Radioactive Ion Beam Facility using particle-γ coincidence spectroscopy. The uncertainties in the energies of the single-particle-like states have been reduced by more than an order of magnitude using the energies of γ rays. The previous tentative J π values have been confirmed. Decays from high-spin states in 131 Sn have been observed following transfer on the isomeric component of the 130 Sn beam. The improved energies and confirmed spin-parities of the p-wave states important to the r-process lead to direct-semidirect cross-sections for neutron capture on the ground state of 130 Sn at 30 keV that are in agreement with previous analyses. A similar assessment of the impact of neutron-transfer on the isomer would require significant nuclear structure and reaction theory input. There are few measurements of transfer reaction on isomers, and this is the first on an isomer in the 132 Sn region.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Nb 3 Sn coating of SRF cavity by cosputtering from a composite target

Here, we deposited an Nb 3 Sn film on the inner surface of a 2.6 GHz Nb superconducting radio frequency cavity by cosputtering using a composite of Nb and Sn tube targets in a DC cylindrical magnetron sputtering system, followed by the thermal annealing of the coated cavity. An aluminum mockup cavity, replicating a 2.6 GHz Nb SRF cavity geometry, was utilized to optimize deposition parameters, resulting in cosputtered Nb–Sn films with an Sn content of 32–42 at. % on the beam tubes and equator positions. Several annealing conditions were investigated to improve the surface homogeneity of the Nb 3 Sn film. The best cosputtered Nb–Sn film was achieved after annealing at 600 °C for 6 h, followed by annealing at 950 °C for 1 h. The best process was applied to a Nb cavity, which was RF tested in a cryogenic dewar. RF testing of the Nb 3 Sn-coated cavity demonstrated a superconducting transition temperature of 17.78 K. The Nb 3 Sn cavity underwent light Sn recoating, followed by additional RF testing, resulting in the enhancement of the RF performance, primarily due to the improved surface homogeneity of the Nb 3 Sn coating.

Nb3Sn film↗

Operational stability of mixed Sn–Pb perovskite solar cells: Mechanisms, mitigation strategies, and perspectives

Mixed Sn–Pb perovskites provide the 1.2–1.3 eV narrow-bandgap absorber needed for high efficiency of all perovskite tandems, but their deployment is limited by operational instability under light. This review synthesizes mechanistic origins and recent mitigation strategies for mixed Sn–Pb perovskite solar cells. The oxidation of Sn 2+ to Sn 4+ , often driven by iodine formation under light and bias, is the primary failure pathway; it creates Sn vacancies, self-doping, and nonradiative loss. Surface/grain-boundary defects, halide migration, reactive oxygen species, and interfacial redox at charge-transport layers, along with hole accumulation from poor band alignment, further accelerate Sn–Pb perovskite degradation. Here we survey recent stability advances across additive chemistry, surface and grain-boundary passivation, buried-interface redesign with modified or alternative hole transport layers, and solvent systems that preserve Sn 2+ and correct Sn–Pb speciation for scalable coating. Together, these recent advances have enabled devices to retain 80%–90% output for hundreds to over a thousand hours. Lastly, we provide our perspectives on further improving the operational stability of Sn–Pb perovskite and solar cells.

14 SOLAR ENERGY↗

A reversible four-electron Sn metal aqueous battery

Sn is a promising metal anode for aqueous batteries, with up to four-electron redox available per atom (903 mAh g −1 Sn ). However, practically harnessing the four-electron Sn(OH) 6 2− /Sn reversibility remains challenging due to limited mechanistic understanding. Here, in this study, we reveal a kinetically asymmetric redox pathway involving a successive four-electron plating and a stepwise 2 + 2 electron stripping through a Sn(OH) 3 − intermediate. The crossover of Sn(OH) 3 − induces a reversible self-discharge that reduces Coulombic efficiency but does not impact cyclability, demonstrated by four-electron Sn-Ni full cells that sustain >800 h of stable cycling. By tuning the ion selectivity of the separator to suppress Sn(OH) 3 − crossover while allowing OH − transport, we further demonstrate high Sn utilization (67%) and high energy density (143.1 Wh L −1 cell). The results provide key understandings of the tradeoffs in engineering reversible multi-electron metal anodes and define a new benchmark for practical energy density that exceeds any Sn-based aqueous batteries to date.

SN anode↗

Microstructural and Superconducting Radiofrequency Properties of Multilayer Sequentially Sputtered Nb 3 Sn films

Nb 3 Sn is considered as a potential candidate for superconducting radiofrequency cavities for particle acceleration due to its higher transition temperature of 18.3 K and higher superheating field of 400 mT. Nb 3 Sn films can be grown inside the surface of a Nb cavity by sequentially sputtering multiple layers of Nb and Sn thin films followed by annealing at 950 °C for 3 h. We report on the properties of Nb 3 Sn films grown on Nb substrates by magnetron sputtering. The films’ crystal structure, surface morphology, and composition were characterized by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The films had a polycrystalline Nb 3 Sn structure with a fine-grain surface and an atomic Sn composition of ~23%. The RF surface resistance of the films was measured for different temperatures at 7.4 GHz to understand the feasibility of this method for the SRF application. The RF surface resistance of the films was 5 mΩ at 12 K, which is about 2 orders of magnitude higher than 60 μΩ previously measured in Nb 3 Sn films grown by Sn vapor diffusion. Finally, the sputtered film had a superconducting transition at 17.2 K, which is also lower than 17.9 K observed in Nb 3 Sn film prepared by vapor diffusion.

43 PARTICLE ACCELERATORS↗

Managing Sn-supply to tune surface characteristics of vapor-diffusion coating of Nb3Sn

Nb₃Sn promises better RF performance (Q and E_{acc}) than niobium at any given temperature because of superior superconducting properties. Nb₃Sn-coated SRF cavities are now produced routinely by growing a few microns thick Nb₃Sn films inside Nb cavities via the tin vapor diffusion technique. Sn evaporation and consumption during the growth process notably affect the quality of the coating. Aiming at favorable surface characteristics that could enhance the RF performance, many coatings were produced by varying Sn sources and temperature profiles. Coupon samples were examined using different material characterization techniques, and a selected few sets of coating parameters were used to coat 1.3 GHz single-cell cavities for RF testing. The Sn supply’s careful tuning is essential to manage the microstructure, roughness, and overall surface characteristics of the coating. We summarize the material analysis of witness samples and discuss the performance of several Nb₃Sn-coated single-cell cavities linked to Sn-source characteristics and observed Sn consumption during the film growth process.

Pudasaini, U.↗

SN 2020bvc: A Broad-line Type Ic Supernova with a Double-peaked Optical Light Curve and a Luminous X-Ray and Radio Counterpart

Here, we present optical, radio, and X-ray observations of SN 2020bvc (=ASASSN20bs; ZTF20aalxlis), a nearby (z = 0.0252; d = 114 Mpc) broad-lined (BL) Type Ic supernova (SN) and the first double-peaked Ic-BL discovered without a gamma-ray burst (GRB) trigger. Our observations show that SN 2020bvc shares several properties in common with the Ic-BL SN 2006aj, which was associated with the low-luminosity gamma-ray burst (LLGRB) 060218. First, the 10 GHz radio luminosity (L radio ≈ 10 37 erg s -1 ) is brighter than ordinary core-collapse SNe but fainter than LLGRB-SNe such as SN 1998bw (associated with LLGRB 980425). We model our VLA observations (spanning 13–43 d) as synchrotron emission from a mildly relativistic (v ≳ 0.3c) forward shock. Second, with Swift and Chandra we detect X-ray emission (L X ≈ 10 41 erg s -1 ) that is not naturally explained as inverse Compton emission or as part of the same synchrotron spectrum as the radio emission. Third, high-cadence (6×/night -1 ) data from the Zwicky Transient Facility (ZTF) shows a double-peaked optical light curve, the first peak from shock-cooling of extended low-mass material (mass M e < 10 -2 M ⊙ at radius R e > 10 12 cm) and the second peak from the radioactive decay of 56 Ni. SN 2020bvc is the first double-peaked Ic-BL SN discovered without a GRB trigger, so it is noteworthy that it shows X-ray and radio emission similar to LLGRB-SNe. For four of the five other nearby (z . 0.05) Ic-BL SNe with ZTF high-cadence data, we rule out a first peak like that seen in SN 2006aj and SN 2020bvc, i.e. that lasts ≈ 1 d and reaches a peak luminosity M ≈ -18. X-ray and radio follow-up observations of Ic-BL SNe with well-sampled early optical light curves will establish whether double-peaked optical light curves are indeed predictive of LLGRB-like X-ray and radio emission.

79 ASTRONOMY AND ASTROPHYSICS↗

Mechanistic origin of solvent-dependent thermal stability in sodiated Sn anodes for sodium-ion batteries

Understanding the thermal stability of high-energy density alloy anodes is critical for the safe deployment of sodium-ion batteries (SIBs). Here, accelerating rate calorimetry (ARC), post-mortem characterizations, and density functional theory (DFT) calculations are combined to understand the thermal reactivity of fully sodiated Sn, Sn-hard carbon (HC) blends, and HC anodes in carbonate- and ether-based electrolytes. ARC measurements show that propylene carbonate (PC) causes earlier self-heating rate (SHR) onset and higher reactivity than tetraethylene glycol dimethyl ether (TEGDME), indicating inferior thermal stability. Sodiated Sn exhibits better thermal stability than sodiated HC, while Sn-HC blends show intermediate behavior that improves with increasing Sn content. Post-ARC analyses reveal desodiation of Na15Sn4 to metallic Sn with particle coalescence, whereas Sn-HC blends and HC retain finer morphologies. PC promotes Sn oxidation to SnO, while TEGDME suppresses oxide formation; NaPF6-containing electrolytes additionally form NaF. DFT calculations show that PC adsorption lowers Na extraction energy and enhances interfacial electronic interactions, facilitating Na release and reductive decomposition. These results establish a direct correlation between solvent-dependent reaction pathways and thermal stability in SIB alloy anodes.

Accelerating rate calorimetry↗

Thermodynamic re-modelling of the Cu–Nb–Sn system: Integrating the nausite phase

Currently available Cu–Nb–Sn phase diagrams lack the recently discovered nausite phase (Cu,Nb)Sn 2 , which is an important intermediate in the course of thermal processing of superconducting Nb 3 Sn wires. Processing decisively determines the resulting microstructure of Nb 3 Sn and, thus, its superconducting properties. Lack of suitable and complete phase diagrams, however, obstructs rational design of such thermal processing procedures. To close this gap and to obtain valid knowledge of homogeneity and stability range of nausite, various Cu–Nb–Sn samples, which are heat-treated between 300 °C and 500 °C, are investigated. By means of energy-dispersive X-ray spectroscopy (EDX), a temperature-dependent homogeneity range of nausite is observed, which covers average mole fractions of Cu between 0.09 and 0.15. This is correlated with a change in the mean atomic volume and can be seen in the lattice parameters determined by X-ray diffraction (XRD). Additionally performed first-principles calculations on different CuSn 2 and NbSn 2 model structures confirm this trend. Furthermore, the peritectic decomposition of nausite to NbSn 2 and liquid at 586 °C is determined by means of in situ XRD and differential scanning calorimetry (DSC). By using the CALPHAD (CALculation of PHase Diagrams) approach, all these findings are used to extend a previous thermodynamic description of the Cu–Nb–Sn system by including the nausite as an additional phase. Finally, with this noteworthy integration, the updated modelling of the Cu–Nb–Sn system can be used for optimizing the multistage heat-treatment steps during processing superconducting Nb 3 Sn wires.

36 MATERIALS SCIENCE↗

Layered Sn-Au Thin Films for Increased Electrochemical ATR-SEIRAS Enhancement

Operando electrochemical attenuated total reflection surface-enhanced infrared absorption spectroscopy (EC ATR-SEIRAS) is a valuable method for a fundamental understanding of electrochemical interfaces under real operating conditions. The applicability of this method depends on the ability to tune the optical and catalytic properties of an electrode film, and it thus requires unique optimization for any given material. Motivated by the growing interest in Sn-based electrocatalysts for selective reduction of CO2 to formate species, we investigate several Sn thin-film synthesis routes for the resulting SEIRA signal response. We compare the SEIRA performance of thermally evaporated metallic Sn to a series of Sn-based films on top of a SEIRA-active Au substrate (metallic Sn, oxide-derived metallic Sn, and metal oxide SnOx). Using alkanethiol self-assembled monolayers as a probe, we find that electrodepositing metallic catalyst films on top of SEIRA-active Au substrates yield higher signal relative to thermal evaporation as well as higher signal than the independent SEIRA-active Au underlayer. These observations come despite the fact that thermally evaporated Sn has a significantly higher surface roughness (and thus higher adsorbate population), suggesting specific SEIRA-magnifying effects for the stacked films. Finally, we applied these films to observe the electrochemical conversion of CO2. Differences are observed in spectral features based on the composition of the electrode being either metallic or oxide-derived metallic Sn, implying differences in their respective reaction pathways.

CO2 reduction↗

Solution Processed Ternary Tin (II) Alloy as Hole–Transport Layer of Sn–Pb Perovskite Solar Cells for Enhanced Efficiency and Stability

Tin-lead (Sn-Pb) narrow bandgap (NBG) perovskites show great potential in both single-junction and all-perovskite tandem solar cells. Sn-Pb perovskite solar cells (PSCs) are still limited by low charge collection efficiency and poor stability. Here, we report a ternary Sn (II) alloy of SnOCl as the hole-transport material (HTM) with a work function of 4.95 eV for Sn-Pb PSCs. The solution processed SnOCl layer has a texture structure which not only reduces the optical loss of the devices but also changes grain growth of Sn-Pb perovskites and boosts the carrier diffusion length to 3.63 μm. The formation of small perovskite grains at the HTM/perovskite interface is suppressed. These result in an almost constant internal quantum efficiency of 96 ± 2% across the absorption spectrum of Sn-Pb perovskites. The SnOCl HTM significantly enhances the stability of Sn-Pb PSCs with 87% of its initial efficiency retained after 1-sun illumination for 1,200 h, and keep 85% efficiency under 85°C thermal stress for 1,500 h. Furthermore, the hybrid HTM further improve the stabilized efficiencies of single-function Sn-Pb PSCs and all-perovskite tandem solar cells to 23.2% and 25.9%, respectively. This discovery opens an avenue to the multi-component metal alloys as HTM in PSCs.

36 MATERIALS SCIENCE↗