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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗
DOE OSTI2025

A Multichannel Silicon Package for Large-Scale Skipper-CCD Experiments

The next generation of experiments for light-dark-matter and neutrino searches based on skipper charge-coupled devices (skipper-CCDs) introduces new challenges for the sensor packaging and readout architecture. Scaling the active mass while simultaneously reducing the experimental backgrounds in orders of magnitude requires a novel high-density silicon-based package that must be massively produced and tested. In this work, we present a silicon multichip module design capable of hosting up to 16 skipper-CCDs, along with the fabrication process for the first prototypes. We thoroughly tested and characterized the assembled prototypes to build an empirical model for the video output signal of skipper-CCDs integrated into the silicon package. We then used this model in simulations to optimize the fabrication process and achieve the robust performance required for the full-scale array, which we validated through a new round of prototype fabrication. We outline the specifications selected for the ongoing production of 1500 silicon wafers that will ultimately add up to a 10-kg skipper-CCD array with 24000 readout channels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗
DOE OSTI2025

Low-Cost, Screen-Printed Silver Metal Complex Inks for Silicon Heterojunction Solar Cells

Screen printing using metal particle pastes, the current photovoltaic industry metallization standard, provides fast and reliable metal grids for silicon solar cells. Recently, metal complex or reactive metal inks are attracting research interest due to their significantly low cost and higher performance compared to traditional nanoparticle silver pastes. In this work, we demonstrate, for the first time, screen-printed high-efficiency silicon heterojunction solar cells metallized by silver metal complex inks on industrial G1-size (158.75 x 158.75 mm2) wafers. We demonstrate screen-printed Ag metal complex ink grid patterns with continuous fingers ~100-120 ..mu..m wide. The printed Ag grid is very thin (~1 ..mu..m), which is an order of magnitude thinner than the current ~20-30 ..mu..m fingers printed with low-temperature nanoparticle-based pastes. Double printing allows silicon heterojunction devices with efficiencies >20%. This is the highest efficiency so far, to our knowledge, of industrial solar cell precursors using this metallization technology. Simulation results suggested that increasing the thickness of the metal film does not significantly improve efficiency due to the dense, highly conductive films. So, a single print of ~1 ..mu..m finger would be enough to produce cells that perform similarly to a ~20 ..mu..m thick nanoparticle paste printed cells. Additionally, solar cells printed on G1 wafers with silver metal complex ink required more than 10 times less silver (~0.03 g) compared to those using silver/copper nanoparticle paste (~0.4 g of Ag). These results indicate that metal complex inks are a very promising replacement for silver nanoparticle pastes for industrial-scale metallization in an age of resource scarcity and high costs of noble metals.

14 SOLAR ENERGY↗
DOE OSTI2025

The STAR Forward Silicon Tracker

The Forward Silicon Tracker (FST) is a pivotal component of the forward upgrade of the Solenoidal Tracker at RHIC (STAR), designed to discern hadron charge signs with a momentum resolution better than 30% for 0.2 < p T < 2GeV/c in the 2.5 < η < 4 pseudorapidity range. Its compact design features three disks along the beam direction, minimized material budget, and scattering effects. The FST uses Hamamatsu’s p-in-n silicon strip sensors with a double metal layer that enables efficient signal routing to the readout electronics, enhancing overall detector performance. The flexible hybrid boards, essential for the readout system, are constructed with Kapton and copper layers to optimize signal handling and power distribution. These boards connect silicon strips to analogue pipeline ASIC APV25-S1 chips, which read up to 128 channels each. A cooling system with nonconducting, volatile NOVEC 7200 coolant at 22.2 °C mitigates ASIC-generated heat. Furthermore, the FST enhances forward tracking performance at STAR as an integral part of the forward upgrade.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Performance of the Particle-Identification Silicon-Telescope Array coupled with the VAMOS++ magnetic spectrometer

The Particle-Identification Silicon-Telescope Array (PISTA) is a new detection system designed for high-resolution studies of fission process induced by multi-nucleon transfer in inverse kinematics. It is specifically optimized for experiments with the VAMOS++ magnetic spectrometer at GANIL (Grand Accélérateur National d’Ions Lourds). The array comprises eight trapezoidal ΔE-E silicon telescopes arranged in a lamp shade configuration. Each telescope integrates two single-sided stripped silicon detectors, enabling target-like recoil identification, energy loss measurements, and trajectory reconstruction. Positioned in close proximity to the target, PISTA’s compact geometry achieves high-efficiency tracking of target-like recoils produced in multi-nucleon transfer reactions at Coulomb barrier energies. The spatial segmentation of the array allows precise determination of the mass and charge of the target-like nucleus, and excitation energy of fissioning systems. This work presents the particle identification and excitation energy reconstruction performances for the interactions of 238 U beam with 12 C target. An excitation energy resolution of 800 keV (FWHM) was determined together with mass resolution of 1.1% (FWHM). The combination of PISTA and VAMOS++ magnetic spectrometer enables unprecedented investigations of the fission process as a function of the excitation energy of the fissioning nucleus, particularly for exotic systems produced in transfer-induced reactions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗
DOE OSTI2024

Composition-Nanoarchitecture-Performance Analysis of High Energy Density Electrodeposited Silicon for Lithium-Ion Battery Anodes

Electrodeposition of silicon (Si) was previously demonstrated as a promising method for fabricating 3D-structured lithium-ion battery anodes. However, the relationship between the electrochemical performance and chemical composition of the relatively impure electrodeposited silicon is not well understood. Here, we report the electrodeposition of a Si-dominant active material (EDEP-Si) onto 3D-structured nickel (Ni) scaffolds and systematically compare the electrochemical properties, elemental composition, atomistic Si coordination, and molecular structure of EDEP-Si with high-purity amorphous Si grown via static chemical vapor deposition. Despite the considerable amount of carbon (9–11 at %) and oxygen (42–44 at %) present in EDEP-Si, the cycling stability and high reversible specific capacity are remarkably similar to those of CVD-Si on a silicon basis (~2400 mA h/g-Si after 100 cycles). The primary difference is that EDEP-Si exhibits reduced cycling efficiency over the first 10–20 cycles. Reactions between carbon and, more importantly, oxygen in EDEP-Si with lithium are likely responsible for the reduced early cycle performance and lower capacity of the total deposit. Finally, our observations suggest ultrapure Si is not necessary for high electrochemical access to reversible charge storage, although limiting the presence of incorporated impurity species would improve energy density and first cycle efficiency.

25 ENERGY STORAGE↗
DOE OSTI2025

Role of Salt Concentration on Interphase Dynamics and Chemistry of Silicon Anodes during Electrochemical Cycling

We investigated the chemistry and structure of the solid electrolyte interphase (SEI) grown over a silicon anode as a function of the lithium salt concentration. In these experiments, in situ neutron reflectivity measurements were performed to measure the thickness and composition of the SEI formed from 1.0 and 5.5 M lithium bis(trifluoromethane)sulfonimide (LiTFSI) in standard ethylene carbonate:dimethyl carbonate electrolytes. These measurements reveal the formation of a 350+ Å thick SEI layer that is predominantly organic (∼80%) and dimensionally stable when using a 1.0 M salt solution. In contrast, increasing the salt concentration to 5.5 M resulted in an SEI that exhibited thickness changes from 100 to 375 Å and became up to 30% inorganic. In conclusion, these compositional and structural changes point to the role of salt speciation on the resulting passivation of silicon electrodes and indicate the need to form more organic-like passivation layers to promote the calendar life of silicon anodes.

Electrodes↗
DOE OSTI2026

Direct Determination of 3C/4H Silicon Carbide Heterophase Interfaces by Electron Ptychography

Silicon carbide is a technologically relevant material that can exist in various structural polymorphs, each with its own electronic properties. Through the controlled growth of abrupt interfaces between the polymorphs, systems with emergent properties arise from differences in local bonding and stacking sequences. Determining the structure of these interfaces provides important insights into predicting and ultimately controlling their properties. Here, in this study, we use multislice electron ptychography (MEP) to qualitatively and quantitatively analyze interfaces between 3C and 4H silicon carbide in three dimensions. Two distinct interfaces are investigated: a coherent interface between $(1\bar{1}1)$ (3C) and $(0001)$ (4H) , and an incoherent interface between $(1\bar{1}2)$ (3C) and $(1\bar{1}00)$ (4H) . At the coherent interface, MEP enables direct quantification of a sharp boundary with an inclined step, whereas at the incoherent interface, local atomic displacements are determined along dislocation cores. By quantifying the spatial distribution and atomic-scale structure of these interfaces in three dimensions, this study provides insight into the complexity of silicon carbide heteropolytype interfaces, paving the way for theoretical modeling and the development of design rules to achieve desired properties.

heterophase interface↗
DOE OSTI2026

Ammonia Synthesis by a Supported Iron-Lithium Hydride Precatalyst: Silicon Nitride Support Enabled Synthesis and Nitrogen Reservoir Dynamics

Amorphous silicon nitride (Si 3 N 4 ) is an unconventional support for the chemisorption of organometallic complexes and offers potential improvements in active site stability and reactivity through enhanced metal-nitrogen covalency and orbital overlap in bonding interactions with the nitride framework. Here, we show that silicon nitride-supported iron mesityl complexes display divergent reactivity compared to their silica-supported homologues, resisting metallic particle formation under reducing pretreatment conditions (exposure to excess organolithium reagents) and maintaining active iron/lithium speciation under ammonia synthesis conditions that is absent on the oxide support. When the organometallic iron complex on silicon nitride is exposed to excess n-butyllithium, iron remains isolated, catalyzing the conversion of butyllithium to lithium hydride, resulting in a divalent iron site in a polyhydride environment. In contrast, the silica-supported complex is converted to reduced iron clusters without forming persistent isolated hydrides. These structural differences lead to markedly different catalytic behaviors under ammonia synthesis conditions. The Li/Fe/Si 3 N 4 catalyst is highly active (7.5 mol NH 3 /mol Fe/h at 300 °C, 10 bar, or 46 mol NH 3 /mol Fe/h at 400 °C, 10 bar), while both the silica-supported analog and the nonlithiated Si 3 N 4 -supported species are inactive. Notably, this activity is enhanced relative to previously reported iron-lithium hydride composite catalysts (0.43–4.1 mol NH 3 /mol Fe/h at 300 °C, 10 bar) and relative to the industrial benchmark promoted iron catalyst KM1 (3.0 mol NH 3 /mol Fe/h at 400 °C, 10 bar). The catalyst activation and LiH/LiNH x nitrogen reservoir dynamics for Li/Fe/Si 3 N 4 are studied by X-ray Absorption, Mössbauer, and in situ DRIFT spectroscopies and isotopic exchange kinetics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

The Solid Electrolyte Interphase Dispersion Can Predict Cycle and Calendar Lifetimes in Silicon Anodes for Lithium-Ion Batteries

The solid electrolyte interphase (SEI) plays a critical role in lithium-ion battery (LIB) anodes. It is responsible for passivating the reactive surface of lithiated anodes against degradation of the electrolyte which enables long cycle and calendar lifetimes for LIBs. This role is especially important in high energy density anodes like silicon, that undergo massive volumetric changes during electrochemical cycling. The mechanism by which the SEI performs this role, however, is not clear which makes designing an SEI to passivate silicon anodes impossible. Through decades of research, dozens of chemical species have been identified within the SEI ranging from inorganic solids to polymeric coatings all of which simultaneously exist in a 'mosaic' composition at the anode surface. This mosaic creates a highly dispersive environment in which electrostatic screening of the anode surface from the electrolyte is not always complete. Here, we present an electrochemical technique to directly test the dispersion at the anode surface. We use this technique to screen more than 20 different electrolytes against silicon anodes and find correlations between both the cycle life and calendar life. The insights from this study offer a new framework to think about the SEI and a rapid screening method to test novel electrode/electrolyte combinations.

battery↗
DOE OSTI2024

Impacts of Curing-Induced Phase Segregation in Silicon Nanoparticle-Based Electrodes

We report the investigation of silicon nanoparticle composite anodes for Li-ion batteries, using a combination of two nm-scale atomic force microscopy-based techniques: scanning spreading resistance microscopy for electrical conduction mapping and contact resonance and force volume for elastic modulus mapping, along with scanning electron microscopy-based energy dispersion spectroscopy, nanoindentation, and electrochemical analysis. Thermally curing the composite anode—made of polyethylene oxide-treated Si nanoparticles, carbon black, and polyimide binder—reportedly improves the anode electrochemical performance significantly. This work demonstrates phase segregation resulting from thermal curing, where alternating bands of carbon and silicon active material are observed. This electrode morphology is retained after extensive cycling, where the electrical conduction of the carbon-rich bands remains relatively unchanged, but the mechanical modulus of the bands decreases distinctly. These electrical and mechanical factors may contribute to performance improvement, with carbon bands serving as a mechanical buffer for Si deformation and providing electrical conduction pathways. This work motivates future efforts to engineer similar morphologies for mitigating capacity loss in silicon electrodes.

25 ENERGY STORAGE↗
DOE OSTI2025

Pushing the Limits: Maximizing Energy Density in Silicon Sulfide Solid‐State Batteries

Here, for the first time, we demonstrate a silicon solid-state battery (SSB) architecture that achieves >400 Wh kg −1 , approaching the theoretical limit for silicon-based SSBs. This configuration features a 99.9 wt% micro-Si, a thin sulfide solid electrolyte (SSE), and a high-loading NMC811. Key to these results is strategically selecting and evaluating the processing techniques, whether wet or dry, for the negative electrode, positive electrode and thin sheet-type SSE. Excessive lithium incorporation into the silicon host, beyond the Li 3.75 +Si phase to form a LiSi composite, is essential to match the high capacity of the positive electrode. This SSB achieves over 1000 cycles for a 2 mAh cm −2 with ≈80% capacity retention and 94% capacity retention for 3 mAh cm −2 over 500 cycles at 25 °C. Post analysis identifies the primary capacity decay mechanisms as oxidation at the NMC/SSE interface and structural disruptions within NMC. Meanwhile, the Si electrode maintains a robust solid-electrolyte interphase layer, minimizing capacity decay. This study highlights the necessity for improved NMC coatings, lattice oxygen stabilization, and a durable positive electrode-electrolyte interface to improve the long-term stability of SSBs. Strategies leading to a single-layer pouch cell SSB exceeding 400 Wh kg −1 are developed.

25 ENERGY STORAGE↗
DOE OSTI2024

First Principles Study of Aluminum Doped Polycrystalline Silicon as a Potential Anode Candidate in Li‐ion Batteries

Addressing sustainable energy storage remains crucial for transitioning to renewable sources. While Li‐ion batteries have made significant contributions, enhancing their capacity through alternative materials remains a key challenge. Micro‐sized silicon is a promising anode material due to its tenfold higher theoretical capacity compared to conventional graphite. However, its substantial volumetric expansion during cycling impedes practical application due to mechanical failure and rapid capacity fading. A novel approach is proposed to mitigate this issue by incorporating trace amounts of aluminum into the micro‐sized silicon electrode using ball milling. Density functional theory (DFT) is employed to establish a theoretical framework elucidating how grain boundary sliding, a key mechanism involved in preventing mechanical failure is facilitated by the presence of trace aluminum at grain boundaries. This, in turn, reduces stress accumulation within the material, reducing the likelihood of failure. To validate the theoretical predictions, capacity retention experiments are conducted on undoped and Al‐doped micro‐sized silicon samples. In conclusion, the results demonstrate significantly reduced capacity fading in the doped sample, corroborating the theoretical framework and showcasing the potential of aluminum doping for improved Li‐ion battery performance.

25 ENERGY STORAGE↗
DOE OSTI2024

Laser‐Sintered Silver Metallization for Silicon Heterojunction Photovoltaic Cells

Herein, a novel metallization technique is reported for crystalline silicon heterojunction (SHJ) solar cells in which silver (Ag) fingers are printed on the SHJ substrates by dispensing Ag nanoparticle‐based inks through a needle and then sintered with a continuous‐wave carbon dioxide (CO 2 ) laser. The impact of the Ag ink viscosity on the line quality and the line resistance is investigated on three Ag inks with different viscosities. Increasing ink viscosity yields higher Ag contact heights, larger aspect ratios, and lower line resistance values. The Ag line height increases from less than a micrometer to ≈18.62 ± 3.48 μm with the increasing viscosity. Photoluminescence imaging shows that the low‐resistance Ag metal contacts obtained do not result in any passivation damage of the SHJ substrate. This is because the wavelength of light emitted from the CO 2 laser (i.e., 10.6 μm) leads to optical absorption in the Ag, but this light is effectively transparent to the transparent conductive oxide film, amorphous silicon films, and crystalline silicon substrate. Bulk resistivity values as low as 6.5 μΩ cm are obtained for the laser‐sintered Ag contact and printed using the Ag ink with the highest viscosity in this work.

Mousumi, Jannatul Ferdous↗