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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Scanning method for screening of electronic devices

A visualization method for screening electronic devices is provided. In accordance with the disclosed method, a probe is applied to a grid of multiple points on the circuit, and an output produced by the circuit in response to the stimulus waveform is monitored for each of multiple grid points where the probe is applied. A power spectrum analysis (PSA) produces a power spectrum amplitude, in each of one or more frequency bins, on the monitored output for each of the multiple grid points. The PSA provides a respective pixel value for each of the multiple grid points. An image is displayed, in which image portions representing the multiple grid points are displayed with the respective pixel values.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

TU-H-209-00: Planning and Delivering HDR APBI Treatments

Learnings Objectives: Although brachytherapy is the oldest form of radiation therapy, the rapid advancement of the methods of dose calculation, treatment planning and treatment delivery pushes us to keep updating our knowledge and experience to new procedures all the time. Our purpose is to present the newest applicators used in Accelerated Partial Breast Irradiation (APBI) and the techniques of using them for a maximum effective treatment. Our objective will be to get the user familiar with the Savi, Contura and ML Mammosite from the detailed description and measurements to cavity eval and choice or size, to acceptance tests and use of each. At the end of the session the attendants will be able to assist at the scanning of the patient for the first treatment, decide on the proper localization and immobilization devices, import the scans in the treatment planning system, perform the structure segmentation, reconstruct the catheters and develop a treatment plan using inverse planning (IPSA) or volume optimization. The attendant should be able to evaluate the quality of a treatment plan according to the ABS protocols and B39 after this session. Our goal is that all the attendants to gain knowledge of all the quality assurance procedures required to be performed prior to a treatment, at the beginning of a treatment day, weekly, monthly and annualy on the remote afterloader, the treatment planning system and the secondary check system. We will provide tips for a consistent treatment delivery of the 10 fractions in a BID (twice daily) regimen.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Ultrasound Interim cyber-physical research evaluation

Recent events have presented Medical Practitioners with concerns about safety and privacy implications associated with GE’s VScan MIot Ultrasound Device. Concerns relate to the devices potential risk to broadcast location data that can pose serious risks to device users and patients. This report was commission in collaboration with Augusta University to determine if device concerns pose real threat to operators and patients. In effort to ensure all potential threat vectors are targeted, the initial step was to analyze the supply chain. Here the devices are CT scanned to look for any hardware anomalies that could present threat vectors to users of these devices. (See SRNL-STI-2024-00225 for detailed analysis). No anomalies were found associated with the hardware utilized within the GE VScan Air.

42 ENGINEERING↗
DOE OSTI2015

SU-E-T-181: Clinical Implementation of Task Group 176

Purpose: The implementation of TG-176 with regards to immobilization devices and couch tops as they effect dosimetric treatment planning. Methods: The external devices used clinically were scanned to measure their HU values. Plans were created in the Eclipse treatment planning system (TPS) using these devices, one that accounted for the correct HU value of the each device and another that did not include the device as a structure. A dose subtraction was performed between the two plans to evaluate the dosimetric differences. The metrics used for evaluation included attenuation and surface dose. Plan parameters were varied to evaluate the impact of the devices in different clinical scenarios. Results: While the exact HU values of our results are clinic-dependent, the protocol being implemented is widely applicable. We recommend a four step process for implementing this task group. First, physics should scan each treatment device to determine accurate HU values. Second, CT therapists should include in the setup note which table top was used during patient CT simulation and are asked to make immobilization devices as uniform in thickness as possible. Therapists should also index the devices whenever possible so beam will traverse the same area of the device. Third, the dosimetrist should manually correct the HU value for any external device, including the couch. For H&N cases, the rails must be removed from the couch structure. When rails are used during treatments, it is important to make note of their exact position in the setup notes. Finally, physicians should be made aware that there could be changes in surface doses depending on whether or not immobilization devices or couch tops are in the beam path. Conclusion: The protocol outlined above was implemented to reduce the errors that arise from ignoring effects of external devices, thus ensuring safer, more accurate patient treatments.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd 2 Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. Here, we use the transfer length method to show our Pd 2 Si contacts have very high yield (99.7% +0.2% –1.5%) and low resistivity (272 ± 41 Ω μm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% –3.2%).

2-dimensional systems↗
DOE OSTI2015

Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Imaging gate-tunable Tomonaga–Luttinger liquids in 1H-MoSe 2 mirror twin boundaries

One-dimensional electron systems exhibit fundamentally different properties than higher-dimensional systems. For example, electron-electron interactions in one-dimensional electron systems have been predicted to induce Tomonaga-Luttinger liquid behaviour. Naturally occurring grain boundaries in single-layer transition metal dichalcogenides exhibit one-dimensional conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behaviour. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and tune their charge carrier concentration. Here we present a scanning tunnelling microscopy and spectroscopy study of gate-tunable mirror twin boundaries in single-layer 1H-MoSe 2 devices. Gating enables scanning tunnelling microscopy and spectroscopy for different mirror twin boundary electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of the resulting mirror twin boundary electronic structure allows unambiguous identification of collective density wave excitations having two velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger liquid theory.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Analysis of the IBL and LBNL irradiated PIN and PN diodes

This report is a follow-up to the previous report on the difference between high fluence, high and low flux irradiations. There was a discrepancy in the data for the LBNL irradiated S5821 PIN diodes. There were diodes irradiated in the two batches (high and low flux) with the same flux and fluence for reference (lell ions/cm 2 /shot and 5, 10, and 20 ions/cm 2 total flux). Although these diodes should have the same electrical characteristics their leakage currents were different by a factor of 5-6 (batch 2 was larger). Also, the C-V measurements showed drastically different results. It was speculated that these discrepancies were due to one of the following two reasons: 1. Different times elapsed between radiation and characterization. 2. Different areas were irradiated (roughly half of the diodes were covered during irradiation). To address the first concern, we annealed the devices according to the ASTM standard [1]. The differences remained the same. To determine the irradiated area, we performed large area IBIC scans on several devices. Error! Reference source not found. below shows the IBIC maps of two devices one from each batch. The irradiated areas are approximately the same.

42 ENGINEERING↗
DOE OSTI2015

Local impedance measurement of an electrode/single-pentacene-grain interface by frequency-modulation scanning impedance microscopy

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance of a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

First Detection of 120 GeV Protons with Superconducting Nanowire Detectors

We report the test results for a 120 GeV proton beam incident on superconducting nanowire particle detectors of various wire sizes. NbN devices with the same sensitive area were fabricated with different wire widths and tested at a temperature of 3 K. The relative detection efficiency was extracted from bias current scans for each device. The results demonstrate efficient detection of high energy protons for wire widths less than 400 nm. These results are particularly relevant for novel applications at accelerator facilities, such as the Electron-Ion Collider, where cryogenic cooling is readily available.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Nanometer-scale temperature imaging for independent observation of Joule and Peltier effects in phase change memory devices

This paper reports a technique for independent observation of nanometer-scale Joule heating and thermoelectric effects, using atomic force microscopy (AFM) based measurements of nanometer-scale temperature fields. When electrical current flows through nanoscale devices and contacts the temperature distribution is governed by both Joule and thermoelectric effects. When the device is driven by an electrical current that is both periodic and bipolar, the temperature rise due to the Joule effect is at a different harmonic than the temperature rise due to the Peltier effect. An AFM tip scanning over the device can simultaneously measure all of the relevant harmonic responses, such that the Joule effect and the Peltier effect can be independently measured. Here we demonstrate the efficacy of the technique by measuring Joule and Peltier effects in phase change memory devices. By comparing the observed temperature responses of these working devices, we measure the device thermopower, which is in the range of 30 ± 3 to 250 ± 10 μV K{sup −1}. This technique could facilitate improved measurements of thermoelectric phenomena and properties at the nanometer-scale.

42 ENGINEERING↗
DOE OSTI2015

Morphological analysis of GeTe in inline phase change switches

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

In operando cryo-STEM of pulse-induced charge density wave switching in TaS 2

The charge density wave material 1T-TaS 2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS 2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS 2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS 2 devices, critical for engineering reliable and scalable TaS 2 electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

A reversible single-molecule switch based on activated antiaromaticity

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivative that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The updated ITPA global H-mode confinement database: description and analysis

The multi-machine ITPA Global H-mode Confinement Database has been upgraded with new data from JET with the ITER-like wall and ASDEX Upgrade with the full tungsten wall. This paper describes the new database and presents results of regression analysis to estimate the global energy confinement scaling in H-mode plasmas using a standard power law. Various subsets of the database are considered, focusing on type of wall and divertor materials, confinement regime (all H-modes, ELMy H or ELM-free) and ITER-like constraints. Apart from ordinary least squares, two other, robust regression techniques are applied, which take into account uncertainty on all variables. Regression on data from individual devices shows that, generally, the confinement dependence on density and the power degradation are weakest in the fully metallic devices. Using the multi-machine scalings, predictions are made of the confinement time in a standard ELMy H-mode scenario in ITER. The uncertainty on the scaling parameters is discussed with a view to practically useful error bars on the parameters and predictions. One of the derived scalings for ELMy H-modes on an ITER-like subset is studied in particular and compared to the IPB98(y,2) confinement scaling in engineering and dimensionless form. Transformation of this new scaling from engineering variables to dimensionless quantities is shown to result in large error bars on the dimensionless scaling. Regression analysis in the space of dimensionless variables is therefore proposed as an alternative, yielding acceptable estimates for the dimensionless scaling. The new scaling, which is dimensionally correct within the uncertainties, suggests that some dependencies of confinement in the multi- machine database can be reconciled with parameter scans in individual devices. This includes vanishingly small dependence of confinement on line-averaged density and normalized plasma pressure (β), as well as a noticeable, positive dependence on effective atomic mass and plasma triangularity. Extrapolation of this scaling to ITER yields a somewhat lower confinement time compared to the IPB98(y, 2) prediction, possibly related to the considerably weaker dependence on major radius in the new scaling (slightly above linear). Further studies are needed to compare more flexible regression models with the power law used here. In addition, data from more devices concerning possible ‘hidden variables’ could help to determine their influence on confinement, while adding data in sparsely populated areas of the parameter space may contribute to further disentangling some of the global confinement dependencies in tokamak plasmas.

Database↗
DOE OSTI2013

Commissioning dose computation models for spot scanning proton beams in water for a commercially available treatment planning system

Purpose: To present our method and experience in commissioning dose models in water for spot scanning proton therapy in a commercial treatment planning system (TPS). Methods: The input data required by the TPS included in-air transverse profiles and integral depth doses (IDDs). All input data were obtained from Monte Carlo (MC) simulations that had been validated by measurements. MC-generated IDDs were converted to units of Gy mm{sup 2}/MU using the measured IDDs at a depth of 2 cm employing the largest commercially available parallel-plate ionization chamber. The sensitive area of the chamber was insufficient to fully encompass the entire lateral dose deposited at depth by a pencil beam (spot). To correct for the detector size, correction factors as a function of proton energy were defined and determined using MC. The fluence of individual spots was initially modeled as a single Gaussian (SG) function and later as a double Gaussian (DG) function. The DG fluence model was introduced to account for the spot fluence due to contributions of large angle scattering from the devices within the scanning nozzle, especially from the spot profile monitor. To validate the DG fluence model, we compared calculations and measurements, including doses at the center of spread out Bragg peaks (SOBPs) as a function of nominal field size, range, and SOBP width, lateral dose profiles, and depth doses for different widths of SOBP. Dose models were validated extensively with patient treatment field-specific measurements. Results: We demonstrated that the DG fluence model is necessary for predicting the field size dependence of dose distributions. With this model, the calculated doses at the center of SOBPs as a function of nominal field size, range, and SOBP width, lateral dose profiles and depth doses for rectangular target volumes agreed well with respective measured values. With the DG fluence model for our scanning proton beam line, we successfully treated more than 500 patients from March 2010 through June 2012 with acceptable agreement between TPS calculated and measured dose distributions. However, the current dose model still has limitations in predicting field size dependence of doses at some intermediate depths of proton beams with high energies. Conclusions: We have commissioned a DG fluence model for clinical use. It is demonstrated that the DG fluence model is significantly more accurate than the SG fluence model. However, some deficiencies in modeling the low-dose envelope in the current dose algorithm still exist. Further improvements to the current dose algorithm are needed. The method presented here should be useful for commissioning pencil beam dose algorithms in new versions of TPS in the future.

60 APPLIED LIFE SCIENCES↗