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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Air Force nickel-hydrogen experiment

An experiment to obtain some flight experience with a nickel-hydrogen battery in low earth orbit is described. The battery was built to be as compatible with the satellite bus as possible because the satellite bus is used for recharge power. The battery is mounted on an experimental pallet on the satellite. It has its own charge control system, a modification of an existing system that is used for nickel-cadmium, which primarily uses temperature compensated voltage as its criteria. Also, on the pallet is a load bank, a resistive load band, which allows switch to various load regimes. There is some other equipment on the satellite such as the nickel-hydrogen battery to power it. Monitors attached to the 21-cell battery are described.

Harsch, B.↗
NASA NTRS1984

Thermoelectric and Thermionic Conversion Technology

Applied research and technology efforts in thermoelectric and thermionic programs were recommended that will enable space power systems for the nation's future space missions. Specifically it was argued that the effort in thermoelectric materials technology be broadened with the objective of obtaining a material with a Figure of Merit greater than 1.0 x 10(-3)/K for hot junction temperatures of 1100 to 1500 K. The recommended effort in thermionics is to pursue technology programs that will result in an understanding and lifetime prediction methodologies for fuel-emitter and sheath-insulator behavior as a function of operating time and temperature. Also it is recommended that an effort be initiated that combines the thermoelectric, thermionic and power electronic technologies into a program to develop the technology for high temperature, high radiation resistant, and high current electronic switches.

Mondt, J. F.↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
NASA NTRS1992

High speed magneto-resistive random access memory

A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

Wu, Jiin-Chuan↗
NASA NTRS1994

Effect of delta tabs on mixing and axis switching in jets from asymmetric nozzles

The effect of delta tabs on mixing and the phenomenon of axis switching in free air jets from various asymmetric nozzles was studied experimentally. Flow visualization and Pitot probe surveys were carried out with a set of small nozzles (D = 1.47 cm) at a jet Mach number, Mj = 1.63. Hot wire measurements for streamwise vorticity were carried out with larger nozzles (D = 6.35 cm) at Mj = 0.31. Jet mixing with the asymmetric nozzles, as indicated by the mass fluxes downstream, was found to be higher than that produced by a circular nozzle. The circular nozzle with four delta tabs, however, produced fluxes much higher than that produced by a asymmetric nozzles themselves or by most of the tab configurations tried with them. Even higher fluxes could be obtained with only a few cases, e.g., with 3:1 rectangular nozzle with two large delta tabs placed on the narrow edges. In this case, the jet 'fanned out' at a large angle after going through one axis switch. The axis switching could be either stopped or augmented with suitable choice of the tab configurations. Two mechanisms are identified governing the phenomenon. One, as described in Ref. 12 and referred to here as the omega(sub Theta)-induced dynamics, is due to differential induced velocities of different segments of a rolled up azimuthal vortical structure. The other is the omega(sub x)-induced dynamics due to the induced velocities of streamwise vortex pairs in the flow. While the former dynamics are responsible for rapid axis switching in periodically forced jets, the effect of the tabs is governed mainly by the latter. It is inferred that both dynamics are active in a natural asymmetric jet issuing from a nozzle having an upstream contraction. The tendency for axis switching caused by the omega(sub Theta)-induced dynamics is resisted by the omega(sub x)-induced dynamics, leading to a delayed or no switch over in that case. In jets from orifices and in screeching jets, the omega(sub Theta)-induced dynamics dominate causing a faster switch over.

Zaman, K. B. M. Q.↗
NASA NTRS2005

High-Efficiency Microwave Power Amplifier

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

Sims, Williams H.↗
NASA NTRS1966

High voltage potential divider calibrated by simple device

Resistance bridge device incorporates a potentiometer, switches, and a null detector to calibrate high potential dividers under high voltage operation conditions. Calibration can be performed with this device in less than 1 minute at an accuracy of 0.001 percent.

Lewis, R. N.↗
NASA NTRS1979

The communications industry's requirements and interests

Of interest to the communications industry are the amplitude, waveshape, duration and frequency of lightning-originated voltage surges and transients on the communications network, including the distribution system and AC power supply circuits. The cloud-to-ground lightning discharge and its characteristics are thought to be most meaningful. Of specific interest are peak current, waveshape, number of flashes, strokes per flash, and zone of influence. Accurate and meaningful lightning data at the local level (telephone district office) is necessary for a decision on the appropriate protection level. In addition to lightning, the protection engineer must consider other factors such as: AC induction, switching surges, ground potential rise, soil resistivity, bonding and grounding techniques, shielding and isolation, and exposure of the telephone loop.

Wanaselja, O.↗
NASA NTRS1993

Lock-up failure of a four-bar linkage deployment mechanism

A successful failure investigation of a four-bar linkage deployment mechanism has been performed. Possible failure causes such as the mismatch of material coefficient of thermal expansion (CTE), excessive hinge friction, limit switch interference, and thermal gradient induced resistive preload were investigated and are discussed. The final conclusions and corrective actions taken are described. Finally, valuable lessons learned during the investigation are discussed.

Zinn, Michael↗
NASA NTRS1979

Development and fabrication of low ON resistance high current vertical VMOS power FETs

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Kay, S.↗
NASA NTRS1967

Rugged switch responds to minute pressure differentials

Pressure responsive switching device exhibits high sensitivity but is extremely rugged and resistant to large amplitude shock and velocity loading. This snap-action, single pole-double throw switch operates over a wide temperature range.

Friend, L. C.↗
NASA NTRS2016

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

vibration control↗
NASA NTRS1981

Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Kapoor, A. K.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS1989

Memory Switches Based On MnO2-x Thin Films

Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.

Ramesham, Rajeshuni↗
NASA NTRS1991

Reduced-Wiring Tactile Sensor

Proposed tactile sensor on robot finger puts out multiplexed analog signals transmitted to control computer on fewer wires than needed to transmit equivalent digital signals. Analog output represents data on contact area of object being gripped, on position of object, and on direction and rate of slippage if any. Consists of chains of normally open switches and resistors on surface of finger. Each resistance double preceding resistance in each chain. Constant-current sources supply power to chains.

Ohm, Timothy R.↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗