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At least 73 records · Page 4

Toward computing bounds for Ramsey numbers using quantum annealing

Quantum annealing is a powerful tool for solving and approximating combinatorial optimization problems, such as graph partitioning, community detection, centrality, routing problems, and more. In this paper we explore the use of quantum annealing as a tool for use in exploring combinatorial mathematics research problems. We consider the monochromatic triangle problem and the Ramsey number problem, both examples of graph coloring. Conversion to quadratic unconstrained binary optimization (QUBO) form is required to run on quantum hardware. While the monochromatic triangle problem is quadratic by nature, the Ramsey number problem requires the use of order reduction methods for a quadratic formulation. The goal is to provide a method for producing special colorings of graphs which if successful would provide lower bounds for certain Ramsey numbers. We discuss implementations, limitations, and results when running on the D-Wave Advantage quantum annealer.

97 MATHEMATICS AND COMPUTING↗

Concatenated dual displacement code for continuous-variable quantum error correction

The continuous-variable (CV) Gaussian no-go theorem fundamentally limits the suppression of Gaussian displacement errors using only Gaussian gates and states. Prior studies have employed Gottesman-Kitaev-Preskill (GKP) states as ancillary qumodes to suppress small Gaussian displacement errors. However, when the displacement magnitude becomes large, inevitable lattice-crossing errors arise beyond the correctable range of the GKP state. To address this issue, we concatenate the Gaussian-noise-suppression circuit with an outer analog Steane code that corrects such occasional lattice-crossing events as well as other abrupt displacement errors. Contrary to conventional concatenation, which primarily aims to reduce logical error rates, the Steane-GKP duality in encoding provides complementary protection against displacement errors at different scales: The inner GKP layer employs non-Gaussian resources to suppress continuous Gaussian noise and reduce residual variance, while the outer analog Steane code corrects discrete lattice-crossing events that exceed the GKP correctable range. It is precisely this separation of error-mitigation roles that enables CV error correction. In contrast to prior work on concatenating GKP and repetition codes to establish error correction for discrete qubit/qudit encoding, we provide correction in the continuous encoding space. Analytical studies show that, under infinite squeezing, the concatenated code suppresses the variance of Gaussian displacement errors acting on all qumodes by up to 50%, while enabling unbiased correction of lattice-crossing errors with a success probability determined by the ratio between the residual Gaussian error standard deviation and the lattice-crossing magnitude. Even with finite squeezing, the proposed architecture still provides Gaussian-error suppression and lattice-crossing correction. Moreover, the presence of the outer analog Steane code relaxes the squeezing requirement of the inner GKP states, indicating near-term experimental feasibility. This work establishes a viable route toward fault-tolerant continuous-variable quantum computation and provides insight into the design of concatenated CV error-correcting architectures.

quantum error correction↗

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.

Physics↗

Ligand‐Induced Crystallization Control in MAPbBr 3 Hybrid Perovskites for High Quality Nanostructured Films

AbstractControlling the formation of hybrid perovskite thin films is crucial in obtaining high‐performance optoelectronic devices, since factors like morphology and film thickness have a profound impact on a film's functionality. For light‐emitting applications grain sizes in the sub‐micrometer‐range have previously shown enhanced brightness. It is therefore crucial to develop simple, yet reliable methods to produce such films. Here, a solution‐based synthesis protocol for the on‐substrate formation of MAPbBr3 (MA = methylammonium) nanostructures by adding the bifunctional rac‐3‐aminobutyric acid to the precursor solution is reported. This synthesis route improves key optical properties such as photoluminescence quantum yields and life times of excited states by inducing a controlled slow‐down of the film formation and suppressing agglomeration effects. In situ spectroscopy reveals a delayed and slowed down crystallization process, which achieves synthesis of perovskite structures with much reduced defect densities. Further, aggregation can be controlled by the amount of amino acid added and adjusting the synthesis protocol allows to produce cubic crystallites with targeted size from nanometer to micrometer scales. The nanocrystalline MAPbBr3 samples show enhanced amplified spontaneous emission (ASE) intensities, reduced ASE thresholds and purer ASE signals, compared to pristine films, even under intense optical driving, making them promising structures for lasing applications.

36 MATERIALS SCIENCE↗

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

When van der Waals Met Kagome: A 2D Antimonide with a Vanadium-Kagome Network

2D materials showcase unconventional properties emerging from quantum confinement effects. In this work, a “soft chemical” route allows for the deintercalation of K + from the layered antimonide KV 6 Sb 6 , resulting in the discovery of a new metastable 2D-Kagome antimonide K 0.1(1) V 6 Sb 6 with a van der Waals gap of 3.2 Å. The structure of K 0.1(1) V 6 Sb 6 was determined via the synergistic techniques, including X-ray pair distribution function analysis, advanced transmission electron microscopy, and density functional theory calculations. The K 0.1(1) V 6 Sb 6 compound crystallizes in the monoclinic space group C2/m (a = 9.57(2) Å, b = 5.502(8) Å, c = 10.23(2) Å, β = 97.6(2)°, Z = 2). The [V 6 Sb 6 ] layers in K 0.1(1) V 6 Sb 6 are retained upon deintercalation and closely resemble the layers in the parent compound, yet deintercalation results in a relative shift of the adjacent [V 6 Sb 6 ] layers. The magnetic properties of the K 0.1(1) V 6 Sb 6 phase in the 2–300 K range are comparable to those of KV 6 Sb 6 and another Kagome antimonide KV 3 Sb 5 , consistent with nearly temperature-independent paramagnetism. Electronic band structure calculation suggests a nontrivial band topology with flat bands and opening of band crossing afforded by deintercalation. Transport property measurements reveal a metallic nature for K 0.1(1) V 6 Sb 6 and a low thermal conductivity of 0.6 W K –1 m –1 at 300 K. Additionally, ion exchange in KV 6 Sb 6 via a solvothermal route leads to a successful partial exchange of K + with A + (A = Na, Rb, and Cs). Here, this study highlights the tunability of the layered structure of the KV 6 Sb 6 compound, providing a rich playground for the realization of new 2D materials.

2D↗

Parametric amplification of spin-motion coupling in three-dimensional trapped-ion crystals

Three-dimensional (3D) crystals offer a route to scaling up trapped-ion systems for quantum sensing and quantum simulation applications; however, engineering coherent spin-motion couplings and effective spin-spin interactions in large crystals poses technical challenges associated with decoherence and prolonged timescales to generate appreciable entanglement. Here, we explore the possibility of speeding up these interactions in 3D crystals via parametric amplification. For this purpose, we derive a general Hamiltonian for the parametric amplification of spin-motion coupling that is broadly applicable to normal modes with motion transverse to or along the spatial extent of the crystal. Unlike in lower-dimensional crystals, we find that the ability to faithfully (uniformly) amplify the spin-spin interactions in 3D crystals depends on the physical implementation of the spin-motion coupling. We consider the light-shift gate, and the so-called phase-insensitive and phase-sensitive Mølmer-Sørensen (MS) gates, and we find that only the phase-sensitive MS gate can be faithfully amplified in general 3D crystals. We discuss a situation where nonuniform amplification can be advantageous. We also reconsider the effect of counter-rotating terms on parametric amplification and find that they are not as detrimental as previous studies suggest.

Optical parametric oscillators & amplifiers↗

Quasimolecular 𝐽 tet = 3/2 Moments in the Cluster Mott Insulator GaTa 4 ⁢Se 8

Quasimolecular orbitals in cluster Mott insulators provide a route to tailor exchange interactions, which may yield novel quantum phases of matter. Here, we demonstrate the cluster Mott character of the lacunar spinel GaTa 4 Se 8 using resonant inelastic x-ray scattering (RIXS) at the Ta L 3 edge. Electrons are fully delocalized over Ta 4 tetrahedra, forming quasimolecular J tet = 3/2 moments. The modulation of the RIXS intensity as function of the transferred momentum q allows us to determine the cluster wave function, which depends on competing intracluster hopping terms that mix states with different character. This mixed wave function is decisive for the macroscopic properties since it affects intercluster hopping and exchange interactions and furthermore renormalizes the effective spin-orbit coupling constant. The versatile wave function, tunable via intracluster hopping, opens a new perspective on the large family of lacunar spinels and cluster Mott insulators in general.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Advancing X-ray quantum imaging through Monte-Carlo simulations

Imaging with X-rays poses fundamental limits due to radiation damage of the highly energetic photons. This becomes problematic for sensitive biological systems such as subcellular structures. Lowering the radiation dose, without sacrificing the signal-to-noise ratio, would be desirable for any kind of imaging modalities involving X-rays. To achieve this goal, quantum imaging with entangled X-ray photons constitutes a promising route. Production of biphotons have been demonstrated in the X-ray regime by the process of Spontaneous Parametric Down-Conversion (SPDC). However, compared to SPDC in the regime of visible light, the production rate for X-ray biphotons is extremely low. With the introduction of new high average brightness X-ray sources, such as 4th generation synchrotrons and high repetition rate Free-Electron X-ray Lasers (XFEL), quantum imaging may become practical. We introduce a ray tracing approach using Monte-Carlo sampling, specifically designed for quantum imaging with entangled X-ray photons generated by SPDC. By simulation, the superior image quality of quantum over classical imaging methods is demonstrated using realistic experimental conditions available at high repetition rate XFELs. With these simulations, we can efficiently assist the design of future experiments at beam lines, which can substantially accelerate the advancement of X-ray quantum imaging and reduce costs.

Entangled Photons↗

Synthesis and Characterization of [Ni(H 2 O)(7-P Ph 2 N ArSO3 ) 2 ](NaBF 4 ) for Light-Driven Quantum Dot-Catalyst Hydrogen Evolution

Light-driven hydrogen generation from water is a route to carbon-neutral fuels. However, the integrated light absorbers and catalysts must be compatible and functional under the same conditions. A sulfate-functionalized complex, [Ni(H 2 O)(7-P Ph 2 N ArSO3 ) 2 ](NaBF 4 ), where P Ph 2 N ArSO3 = 4-(3,6-diphenyl-1,3,6-azadiphosphepan-1-yl)benzenesulfonate), was synthesized and characterized. A solid-state structure from single-crystal X-ray crystallography is also reported. The electrocatalytic activity for hydrogen evolution of this complex in 7:3 H 2 O:CH 3 CN was characterized by cyclic voltammetry and controlled potential electrolysis, with a maximum observed rate of 83 s –1 . Density functional theory was used to characterize the favorable binding of the sulfate functionalities to cadmium sulfide quantum dots. Experimental assembly of these catalysts onto cadmium sulfide quantum dots was successful. In conclusion, both fast electron transfer and light-driven pH-dependent hydrogen evolution were observed.

36 MATERIALS SCIENCE↗

Genesis: A Compiler Framework for Hamiltonian Simulation on Hybrid CV-DV Quantum Computers

We introduce Genesis, the first compiler designed to support Hamiltonian Simulation on hybrid continuous-variable (CV) and discrete-variable (DV) quantum computing systems. Genesis is a two-level compilation system. At the first level, it decomposes an input Hamiltonian into basis gates using the native instruction set of the target hybrid CV-DV quantum computer. At the second level, it tackles the mapping and routing of qumodes/qubits to implement long-range interactions for the gates decomposed from the first level. Rather than a typical implementation that relies on SWAP primitives similar to qubit-based (or DV-only) systems, we propose an integrated design of connectivity-aware gate synthesis and beamsplitter SWAP insertion tailored for hybrid CV-DV systems. We also introduce an OpenQASM-like domain-specific language (DSL) named CVDV-QASM to represent Hamiltonian in terms of Pauli-exponentials and basic gate sequences from the hybrid CVDV gate set. Genesis has successfully compiled several important Hamiltonians, including the Bose-Hubbard model, Z2−Higgs model, Hubbard-Holstein model, Heisenberg model and Electron-vibration coupling Hamiltonians, which are critical in domains like quantum field theory, condensed matter physics, and quantum chemistry. Our implementation is available at Genesis-CVDV-Compiler https://github.com/ruadapt/Genesis-CVDV-Compiler

Chen, Henry↗

Ultralow-temperature cryogenic transmission electron microscopy using a new helium flow cryostat stage

Advances in cryogenic electron microscopy have opened new avenues for probing quantum phenomena in correlated materials. This study reports the installation and performance of a new side-entry condenZero cryogenic cooling system for JEOL (Scanning) Transmission Electron Microscopes (S/TEM), utilizing compressed liquid helium (LHe) and designed for imaging and spectroscopy at ultra-low temperatures. The system includes an external dewar mounted on a vibration-damping stage and a pressurized, low-noise helium transfer line with a remotely controllable needle valve, ensuring stable and efficient LHe flow with minimal thermal and mechanical noise. Performance evaluation demonstrates a stable base temperature of 4.37 K measured using a Cernox bare chip sensor on the holder with temperature fluctuations within ±0.004 K. Complementary in-situ electron energy-loss spectroscopy (EELS) via aluminum bulk plasmon analysis was used to measure the local specimen temperature and validate cryogenic operation during experiments. The integration of cryogenic cooling with other microscopy techniques, including electron diffraction and Lorentz TEM, was demonstrated by resolving charge density wave (CDW) transitions in NbSe2 using electron diffraction, and imaging nanometric magnetic skyrmions in MnSi via Lorentz TEM. In conclusion, this platform provides reliable cryogenic operation below 7 K, establishing a low-drift route for direct visualization of electronic and magnetic phase transformations in quantum materials.

Charge density wave↗

Quantum many-body linear algebra, Hamiltonian moments, and a coupled-cluster inspired framework

Here, we propose a general strategy to develop quantum many-body approximations of primitives in linear algebra algorithms. As a practical example, we introduce a coupled-cluster inspired framework to produce approximate Hamiltonian moments and demonstrate its application in various linear algebra algorithms for ground state estimation. Through numerical examples, we illustrate the difference between the ground-state energies arising from quantum many-body linear algebra and those from the analogous many-body perturbation theory. Our results support the general idea of designing quantum many-body approximations outside of perturbation theory, providing a route to new algorithms and approximations.

Algorithms and data structure↗

Pressure-induced insulator-to-metal transition in the quantum spin liquid candidate lithium ytterbium diselenide

Metallization of quantum spin liquid (QSL) materials has long been considered as a potential route toward unconventional superconductivity. Here, we investigate the pressurization of lithium ytterbium diselenide (LiYbSe 2 ), a three-dimensional QSL candidate with a pyrochlore structure. High-pressure X-ray diffraction (up to 15 GPa) and Raman spectroscopy (up to 48 GPa) reveal no significant structural changes within this pressure range. Remarkably insulating, LiYbSe 2 exhibits a resistance below 10 5 Ω only at pressures exceeding 25 GPa, accompanied by a gradual reduction of band gap upon compression. Interestingly, an insulator-to-metal transition occurs around 68 GPa, and the metallic behavior persists up to 123.5 GPa, the highest pressure achieved in this study. A possible sign of magnetic transitions is also observed. The insulator-to-metal transition in LiYbSe 2 under high pressure presents an ideal platform to explore the pressure effects on QSL candidates of spin-1/2 Yb 3+ systems with various lattice patterns.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms​ ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

Universal Jaynes-Cummings Control of an Oscillator

The Jaynes-Cummings (JC) interaction-the coherent exchange of excitations between a two-level system and a harmonic oscillator-is one of the fundamental interactions of quantum optics, realized across platforms such as cavity quantum electrodynamics, trapped ions, mechanical resonators, and superconducting circuits. Although JC interactions and qubit rotations form a universal gate set for oscillator control, practical implementations have not been demonstrated. Here we develop and experimentally demonstrate universal JC-based oscillator control by compiling arbitrary unitary gates into sequences of JC interactions and qubit rotations. In our experiment, the oscillator is realized using a mode of a high quality factor microwave cavity and the ancilla qubit using a superconducting transmon circuit, with the JC interaction implemented by a sideband interaction enabled by the Josephson nonlinearity. The native gates are constructed to be closed below a chosen cutoff photon number, encoding a qudit with suppressed leakage errors, while ancilla relaxation errors are detectable. We further find that the dispersive shift serves as a compilation resource that reduces circuit depths. We demonstrate universal qudit control and implement a single-qutrit gate set with a mean post-selected process fidelity of 96%, as well as ququart and ququint shift gates. These results establish Jaynes-Cummings control as a practical route to universal oscillator control, enabling programmable bosonic processors across a variety of quantum platforms.

Huang, Jordan [Rutgers U., Piscataway]↗

Cosolvent-tuned interactions in ionic liquids: A vibrational and quantum-chemical study of ethylene glycol ratio effects

Ionic liquids (ILs) are attractive media for CO 2 capture but remain limited by viscosity and cost. Blending ILs with ethylene glycol (EG) is a practical route to mitigate these constraints, yet the molecular origins of cosolvent effects and their dependence on composition are not well resolved. We combine Fourier-transform infrared (FT-IR) spectroscopy with quantum-chemical (DFT) analysis to elucidate how the IL:EG molar ratio modulates intermolecular interactions and electronic structure. Computed vibrational frequencies enable mode assignment and deconvolution of overlapping bands, revealing systematic, ratio-dependent shifts and broadenings in (i) EG O–H stretching, (ii) cation and EG C–H stretchings (imidazolium C2–H, C4–H, C5–H, methyl and ethyl groups, -CH2 of EG), (iii) anion signature modes (e.g., CN motifs), and (iv) EG C–O and C–C stretchings, consistent with the redistribution of hydrogen-bonding networks. Molecular electrostatic potential (MESP) maps quantify attenuation of extreme potential regions with increasing EG, indicating progressive screening of cation–anion electrostatic interactions. Quantum Theory of Atoms in Molecules (QTAIM) identifies emergent bond critical points between EG and the IL ions, while Reduced Density Gradient–Noncovalent Interaction (RDG–NCI) analysis differentiates strong directional hydrogen bonds from dispersive contacts across compositions. Together, these results show that EG fraction controls a switch from predominantly ion–ion to mixed ion–EG coordination, altering local polarity and polarizability that underlie the observed FT-IR trends. The framework provides composition–structure–spectrum relationships that can guide rational selection of IL:EG ratios to balance favorable molecular interactions with practical performance targets in scalable CO 2 capture systems.

DAC↗