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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Avalanche-diode oscillator circuit with tuning at multiple frequencies

Detailed theoretical analysis of three different modes or types of high efficiency oscillation in a PIN diode are presented. For the TRAPATT mode in a PIN diode, it is shown that a traveling avalanche zone is not necessary to generate a dense trapped plasma. An economical computer program for TRAPATT oscillations in a PIN diode is described. Typical results of diode power, dc-to-RF conversion efficiency, and required circuit impedances are presented for several different current waveforms. A semianalytical solution for a second type of high efficiency mode in a PIN diode is derived assuming a rectangular current waveform. A quasi-static approximation is employed to derive a semianalytical solution for the voltage across a PIN diode in a third mode, where avalanching occurs during a major portion of a half cycle. Calculations for this mode indicate that the power increases proportionally to the magnitude of the drive current with a small decrease in efficiency relative to the ordinary TRAPATT mode. An analytical solution is also given for a PIN diode, where it is assumed that the ionization coefficient is a step function. It is shown that the step-ionization approximation permits one to draw possible patterns of avalanche region in the depletion layer as a function of time. A rule governing admissible patterns is derived and an example solution given for one admissible pattern. Preliminary experimental results on the high-efficiency oscillations are presented and discussed. Two different experimental circuits, which used channel-dropping filters to provide independent harmonic tuning, are described. Simpler circuits used to produce high-efficiency oscillations are discussed. Results of experiments using inexpensive Fairchild FD300 diodes are given.

Parker, D.↗
NASA NTRS1988

Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.

Hwu, J. R.↗
DOE OSTI2026

AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics

We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.

Xiong, Juncheng [University of Notre Dame, IN (Uni↗
DOE OSTI2022

Plasma-based edge terminations for gallium nitride power devices

A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

Zhao, Yuji↗
NASA NTRS2008

Kinetic Temperature and Electron Density Measurement in an Inductively Coupled Plasma Torch using Degenerate Four-Wave Mixing

Laser wave mixing is presented as an effective technique for spatially resolved kinetic temperature measurements in an atmospheric-pressure radio-frequency inductively-coupled plasma. Measurements are performed in a 1 kW, 27 MHz RF plasma using a continuous-wave, tunable 811.5-nm diode laser to excite the 4s(sup 3)P2 approaches 4p(sup 3)D3 argon transition. Kinetic temperature measurements are made at five radial steps from the center of the torch and at four different torch heights. The kinetic temperature is determined by measuring simultaneously the line shape of the sub-Doppler backward phase-conjugate degenerate four-wave mixing and the Doppler-broadened forward-scattering degenerate four-wave mixing. The temperature measurements result in a range of 3,500 to 14,000 K+/-150 K. Electron densities measured range from 6.1 (+/-0.3) x 10(exp 15)/cu cm to 10.1 (+/-0.3) x 10(exp 15)/cu cm. The experimental spectra are analyzed using a perturbative treatment of the backward phase-conjugate and forward-geometry wave-mixing theory. Stark width is determined from the collisional broadening measured in the phase-conjugate geometry. Electron density measurements are made based on the Stark width. The kinetic temperature of the plasma was found to be more than halved by adding deionized water through the nebulizer.

Schafer, Julia↗
DOE OSTI2020

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

In this work, steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ~10× increase in the near-midgap Ec – 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously. A photoelectrochemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2× reduction in the density of Ec – 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Achieving Higher Fidelity Pulsed-Power Simulations Using Advanced Gap Closure Modeling

This project has progressed several physics models in the EMPIRE plasma simulation code to achieve higher fidelity simulations of high-current diode operation in pulsed-power accelerators. In this report, we present details for the following major work products: (1) a set of verification problems covering all key processes involved in gap closure physics has been designed; this suite has facilitated feature vetting and overall model maturation, (2) a new EMPIRE exemplar has been developed: the Radiographic Integrated Test Stand 6 (RITS-6) diode, and (3) An exemplar for the Saturn accelerator exemplar was enabled by the models matured under this work to self-consistently simulate further into the diode pulse than previously possible (bipolar flow regime). These developments have lead to the highest confidence EMPIRE power flow predictions of the Saturn accelerator to date. Additionally, three modeling approaches for simulating electrode plasmas have been investigated. We report on these results and provide recommendations.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Atomic layer etching (ALE) of III-nitrides

Atomic layer etching (ALE) was performed on (Al, In, Ga)N thin films using a cyclic process of alternating Cl 2 gas absorption and Ar + ion bombardment in an inductively coupled plasma etcher system. The etch damage was characterized by comparing photoluminescence of blue single quantum well light-emitting diodes before and after the etch as well as bulk resistivities of etched p-doped layers. It was found that etched surfaces were smooth and highly conformal, retaining the step-terrace features of the as-grown surface, thus realizing ALE. Longer exposures to the dry etching increased the bulk resistivity of etched surfaces layers slightly, with a damaged depth of ∼55 nm. With further optimization and damage recovery, ALE is a promising candidate for controlled etching with atomic accuracy. Finally, it was found that Al 0.1 Ga 0.9 N acts as an etch barrier for the ALE etch, making it a suitable etch to reveal buried V-defects in III-nitride light emitting diodes.

Atomic-layer etching↗
DOE OSTI2022

Argon metastable density and temperature of a 43 GHz microplasma

Argon (1s 5 ) metastable density and translational gas temperature are experimentally measured using laser diode absorption spectroscopy within a 43 GHz microplasma. The plasma is initiated and sustained within a photonic crystal constructed from a rectangular array of alumina rods, each 1 mm in diameter. This configuration generates stable microplasma from 10 to 600 Torr using millimeter wave power from 100 to 1200 mW. The metastable density is in the order of 10 18 m –3 at low pressure. However, Ar(1s 5 ) density decreases to undetectable levels with increasing pressure and wave power. The gas temperature is extracted from the Lorentzian line shape of the absorption profile at 811.53 nm. The gas temperature increases from approximately 400 K at low pressure to 2000 K at 320 Torr (427 mbar, 4.27 × 10 4 Pa). Furthermore, these data are compared with previous results and suggest that the microplasma has a dense core of electrons that depletes the metastable density at high gas pressure and wave power.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Planar laser-induced fluorescence system for spatiotemporal ion velocity distribution function measurements

In this work, we present a planar laser-induced fluorescence (PLIF) system for measuring two-dimensional (2D), spatiotemporally resolved ion velocity distribution functions (IVDFs). A continuous-wave tunable diode laser produces a laser sheet that irradiates the plasma, and the resulting fluorescence is captured by an intensified CCD (ICCD) camera. Fluorescence images recorded at varying laser wavelengths are converted into 2D IVDFs using the Doppler shift principle. The developed diagnostic is implemented in an electron beam generated E × B plasma with a bulk plasma density of $\sim\!\!{10^{10}}{\text{c}}{{\text{m}}^{ - 3}}$ . The developed diagnostic is validated against a conventional single-point LIF method using photomultiplier tube-based detection, while significantly reducing the total measurement time by the number of spatial positions measured. The time-resolving capability of this diagnostic is tested by oscillating the plasma between two nominal operating modes with different density profiles and triggering the ICCD camera by the externally driven plasma oscillation. The measured 2D IVDF maps reveal several signatures of ion dynamics in this plasma source, including radially outflowing ions across the electric field and anomalous ion heating at the periphery, consistent with recent kinetic simulations and theoretical studies. A possible correlation between these ion kinetic features and rotating spoke structures is discussed.

E×B plasma↗
NASA NTRS1983

EBIC investigation of hydrogenation of crystal defects in EFG solar silicon ribbons

Changes in the contrast and resolution of defect structures in 205 Ohm-cm EFG polysilicon ribbon subjected to annealing and hydrogenation treatments were observed in a JEOL 733 Superprobe scanning electron microscope, using electron beam induced current (EBIC) collected at an A1 Schottky barrier. The Schottky barrier was formed by evaporation of A1 onto the cleaned and polished surface of the ribbon material. Measurement of beam energy, beam current, and the current induced in the Schottky diode enabled observations to be quantified. Exposure to hydrogen plasma increased charge collection efficiency. However, no simple causal relationship between the hydrogenation and charge collection efficiency could be inferred, because the collection efficiency also displayed an unexpected thermal dependence. Good quality intermediate-magnification (1000X-5400X) EBIC micrographs of several specific defect structures were obtained. Comparison of grown-in and stress-induced dislocations after annealing in vacuum at 500 C revealed that stress-induced dislocations are hydrogenated to a much greater degree than grown-in dislocations. The theoretical approximations used to predict EBIC contrast and resolution may not be entirely adequate to describe them under high beam energy and low beam current conditions.

Sullivan, T.↗
DOE OSTI2022

Characterization of self-magnetic pinch (SMP) radiographic diode performance on RITS-6 at Sandia National Laboratories. I. Diode dynamics, DC heating to extend radiation pulse

Radiographic diodes focus on an intense electron beam to a small spot size to minimize the source area of energetic photons for radiographic interrogation. The self-magnetic pinch (SMP) diode has been developed as such a source and operated as a load for the six-cavity radiographic integrated test stand (RITS-6) inductive voltage adder driver. While experiments support the generally accepted conclusion that a 1:1 aspect diode (cathode diameter equals anode–cathode gap) delivers optimum SMP performance, such experiments also show that reducing the cathode diameter, while reducing spot size, also results in reduced radiation dose, by as much as 50%, and degraded shot reproducibility. Analysis of the effective electron impingement angle on the anode converter with time made possible by a newly developed dose-rate array diagnostic indicates that fast-developing oscillations of the angle are correlated with early termination of the radiation pulse on many of the smaller-diameter SMP shots. This behavior as a function of relative cathode size persists through experiments with output voltages and currents up to 11.5 MV and 225 kA, respectively, and with spot sizes below approximately few millimeters. Since simulations to date have not predicted such oscillatory behavior, considerable discussion of the angle behavior of SMP shots is made to lend credence to the inference. We report there is clear anecdotal evidence that DC heating of the SMP diode region leads to stabilization of this oscillatory behavior. This is the first of two papers on the performance of the SMP diode on the RITS-6 accelerator.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Characterization of self-magnetic pinch radiographic diode performance on RITS-6 at Sandia National Laboratories. II. Coupling between the inductive voltage adder and the SMP load

The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1980

Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

Gourrier, S.↗
DOE OSTI2023

Metastable argon dynamics in a pulsed microplasma at 43 GHz

Short pulses of millimeter wave (MMW) radiation at 43 GHz create microplasma within a photonic crystal for pressures from 40 to 600 Torr (1.3 × 10 3 –8.0 × 10 4 Pa). Gas breakdown occurs within a photonic crystal, which acts as an electromagnetic resonator to create a strong initial electric field. The time response of the argon metastable density is experimentally determined during the pulse and in the afterglow using laser absorption. The metastable density overshoots the steady-state condition at the beginning of the pulse and during the afterglow. Modeling is presented to understand these observations. The overproduction of argon 1s5 at the beginning of each pulse is due to a concurrent overshoot in the MMW electric field within the photonic crystal. This field overheats the plasma electrons and enhances the production of excited states. The burst of argon metastables observed in the afterglow is due to the pooled energy of the plasma stored in electrons, ions, and excited states of argon. As a result, understanding metastable production is an important intermediate step to ionization and is also critical in the study of diode-pumped rare gas lasers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗