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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Advanced Embedded Active Assemblies for Extreme Space Applications

This work describes the development and evaluation of advanced technologies for the integration of electronic die within membrane polymers. Specifically, investigators thinned silicon die, electrically connecting them with circuits on flexible liquid crystal polymer (LCP), using gold thermo-compression flip chip bonding, and embedding them within the material. Daisy chain LCP assemblies were thermal cycled from -135 to +85degC (Mars surface conditions for motor control electronics). The LCP assembly method was further utilized to embed an operational amplifier designed for operation within the Mars surface ambient. The embedded op-amp assembly was evaluated with respect to the influence of temperature on the operational characteristics of the device. Applications for this technology range from multifunctional, large area, flexible membrane structures to small-scale, flexible circuits that can be fit into tight spaces for flex to fit applications.

lead bonding↗
NASA NTRS1989

Multichannel, Active Low-Pass Filters

Multichannel integrated circuits cascaded to obtain matched characteristics. Gain and phase characteristics of channels of multichannel, multistage, active, low-pass filter matched by making filter of cascaded multichannel integrated-circuit operational amplifiers. Concept takes advantage of inherent equality of electrical characteristics of nominally-identical circuit elements made on same integrated-circuit chip. Characteristics of channels vary identically with changes in temperature. If additional matched channels needed, chips containing more than two operational amplifiers apiece (e.g., commercial quad operational amplifliers) used. Concept applicable to variety of equipment requiring matched gain and phase in multiple channels - radar, test instruments, communication circuits, and equipment for electronic countermeasures.

Lev, James J.↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS1971

Constant-amplitude, frequency- independent phase shifter

Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and phase detector.

Deboo, G. J.↗
NASA NTRS1995

High input impedance amplifier

High input impedance amplifiers are provided which reduce the input impedance solely to a capacitive reactance, or, in a somewhat more complex design, provide an extremely high essentially infinite, capacitive reactance. In one embodiment, where the input impedance is reduced in essence, to solely a capacitive reactance, an operational amplifier in a follower configuration is driven at its non-inverting input and a resistor with a predetermined magnitude is connected between the inverting and non-inverting inputs. A second embodiment eliminates the capacitance from the input by adding a second stage to the first embodiment. The second stage is a second operational amplifier in a non-inverting gain-stage configuration where the output of the first follower stage drives the non-inverting input of the second stage and the output of the second stage is fed back to the non-inverting input of the first stage through a capacitor of a predetermined magnitude. These amplifiers, while generally useful, are very useful as sensor buffer amplifiers that may eliminate significant sources of error.

Kleinberg, Leonard L.↗
NASA NTRS2011

Control of Fan Blade Vibrations Using Piezoelectrics and Bi-Directional Telemetry

A novel wireless device which transfers supply power through induction to rotating operational amplifiers and transmits low voltage AC signals to and from a rotating body by way of radio telemetry has been successfully demonstrated in the NASA Glenn Research Center (GRC) Dynamic Spin Test Facility. In the demonstration described herein, a rotating operational amplifier provides controllable AC power to a piezoelectric patch epoxied to the surface of a rotating Ti plate. The amplitude and phase of the sinusoidal voltage command signal, transmitted wirelessly to the amplifier, was tuned to completely suppress the 3rd bending resonant vibration of the plate. The plate's 3rd bending resonance was excited using rotating magnetic bearing excitation while it spun at slow speed in a vacuum chamber. A second patch on the opposite side of the plate was used as a sensor. This paper discusses the characteristics of this novel device, the details of a spin test, results from a preliminary demonstration, and future plans.

Provenza, Andrew J.↗
NASA NTRS2007

Maintaining Stability During a Conducted-Ripple EMC Test

An improved technique, and electronic circuitry to implement the technique, have been developed for a military-standard electromagnetic-compatibility (EMC) test in which one analyzes susceptibility to low-frequency ripple conducted into the equipment under test via a DC power line. In the traditional technique for performing the particular test, the ripple is coupled onto the DC power line via a transformer. Depending upon some design details of the equipment under test, the inductance of the transformer can contribute a degree of instability that results in an oscillation of amplitude large enough to destroy the equipment. It is usually possible to suppress the oscillation by connecting a damping resistor to the primary terminals of the ripple-injection transformer. However, it is important to emphasize the usually in the preceding sentence: sometimes, the resistive damping becomes insufficient to suppress destructive oscillation. In addition, undesirably, the resistor contributes to power dissipation and power demand, and thereby also necessitates the use of a larger ripple voltage amplifier. Yet another disadvantage of the transformer-coupling technique is that the transformer introduces low-frequency distortion of the injected ripple voltage. The improved technique makes it possible to inject ripple with very low distortion at low frequency, without inducing oscillation. In this technique, a transformer is not used: Instead, power is fed to the equipment under test via series power field-effect transistors (FETs) controlled by a summing operational amplifier. One of the inputs to the amplifier controls the DC component of the power-line voltage; the other input, generated by an external oscillator, controls the ripple component. The circuitry for implementing this technique includes panel displays, an internal power supply for the operational amplifier and panel displays, and amplitude controls for the DC and ripple powerline voltage components.

Vorperian, Vatche↗
NASA NTRS2007

Circuit and Method for Communication Over DC Power Line

A circuit and method for transmitting and receiving on-off-keyed (OOK) signals with fractional signal-to-noise ratios uses available high-temperature silicon- on-insulator (SOI) components to move computational, sensing, and actuation abilities closer to high-temperature or high-ionizing radiation environments such as vehicle engine compartments, deep-hole drilling environments, industrial control and monitoring of processes like smelting, and operations near nuclear reactors and in space. This device allows for the networking of multiple, like nodes to each other and to a central processor. It can do this with nothing more than the already in-situ power wiring of the system. The device s microprocessor allows it to make intelligent decisions within the vehicle operational loop and to effect control outputs to its associated actuators. The figure illustrates how each node converts digital serial data to OOK 18-kHz in transmit mode and vice-versa in receive mode; though operations at lower frequencies or up to a megahertz are within reason using this method and these parts. This innovation s technique modulates a DC power bus with millivolt-level signals through a MOSFET (metal oxide semiconductor field effect transistor) and resistor by OOK. It receives and demodulates this signal from the DC power bus through capacitive coupling at high temperature and in high ionizing radiation environments. The demodulation of the OOK signal is accomplished by using an asynchronous quadrature detection technique realized by a quasi-discrete Fourier transform through use of the quadrature components (0 and 90 phases) of the carrier frequency as generated by the microcontroller and as a function of the selected crystal frequency driving its oscillator. The detected signal is rectified using an absolute-value circuit containing no diodes (diodes being non-operational at high temperatures), and only operational amplifiers. The absolute values of the two phases of the received signal are then summed and hard limited (digitized) by comparing them to a reference level and are then input into a microprocessor as a serial bit stream. The quasi-discrete Fourier transform is performed in high-temperature components (operational amplifiers, analog switches, resistors, and capacitors). The demodulated signal is a serial data stream that is input to the UART (universal asynchronous receiver transmitter) receiver pin of the microprocessor. The OOK of the carrier frequency uses the output of the UART pin as an enabling signal that drives the gate of the MOSFET. Logic low bits enable the carrier frequency (realized by using the 0 phase signal from the microcontroller, though either phase may be used) to be DC-coupled to the power supply bus through a current-limiting resistor mounted between the MOSFET drain and the supply rail. The presence of logic lows on the power supply rail is realized by carrier bursts while logic highs are realized by the absence of bursts.

Krasowski, Michael J.↗
NASA NTRS1980

Active notch filter network with variable notch depth, width and frequency

An active notch filter having independently adjustable notch frequency, width, and depth is provided by three equal capacitors connected in series with an operational amplifier (connected in a voltage follower configuration), a potentiometer across the series connected capacitors for notch depth adjustment, and a potentiometer (for notch frequency connected across the center capacitor); with its tap connected to receive a voltage feedback signal from a variable voltage divider comprised of another potentiometer for notch width. Adjusting the voltage dividing potentiometer will independently set the notch width, and adjusting the tap on the potentiometer across the center capacitor will independently adjust the notch frequency of the filter. A second operational amplifier connected in a voltage follower configuration may be used to connect the voltage divider output to the adjustable tap of the potentiometer across the center capacitor.

Black, J. M.↗
NASA NTRS1983

Automatic level control circuit

An automatic level control circuit for an operational amplifier for minimizing spikes or instantaneous gain of the amplifier at a low period wherein no signal is received on the input is provided. The apparatus includes a multibranch circuit which is connected between an output terminal and a feedback terminal. A pair of zener diodes are connected back to back in series with a capacitor provided in one of the branches. A pair of voltage dividing resistors are connected in another of the branches and a second capacitor is provided in the remaining branch of controlling the high frequency oscillations of the operational amplifier.

Toole, P. C.↗
NASA NTRS2013

CRUQS: A Miniature Fine Sun Sensor for Nanosatellites

A new miniature fine Sun sensor has been developed that uses a quadrant photodiode and housing to determine the Sun vector. Its size, mass, and power make it especially suited to small satellite applications, especially nanosatellites. Its accuracy is on the order of one arcminute, and it will enable new science in the area of nanosatellites. The motivation for this innovation was the need for high-performance Sun sensors in the nanosatellite category. The design idea comes out of the LISS (Lockheed Intermediate Sun Sensor) used by the sounding rocket program on their solar pointing ACS (Attitude Control System). This system uses photodiodes and a wall between them. The shadow cast by the Sun is used to determine the Sun angle. The new sensor takes this concept and miniaturizes it. A cruciform shaped housing and a surface-mount quadrant photodiode package allow for a two-axis fine Sun sensor to be packaged into a space approx.1.25xl x0.25 in. (approx.3.2x2.5x0.6 cm). The circuitry to read the photodiodes is a simple trans-impedance operational amplifier. This is much less complex than current small Sun sensors for nanosatellites that rely on photo-arrays and processing of images to determine the Sun center. The simplicity of the circuit allows for a low power draw as well. The sensor consists of housing with a cruciform machined in it. The cruciform walls are 0.5-mm thick and the center of the cruciform is situated over the center of the quadrant photodiode sensor. This allows for shadows to be cast on each of the four photodiodes based on the angle of the Sun. A simple operational amplifier circuit is used to read the output of the photodiodes as a voltage. The voltage output of each photodiode is summed based on rows and columns, and then the values of both rows or both columns are differenced and divided by the sum of the voltages for all four photodiodes. The value of both difference over sums for the rows and columns is compared to a table or a polynomial fit (depending on processor power and accuracy requirements) to determine the angle of the Sun in the sensor frame.

Heatwole, Scott↗
NASA NTRS1988

Recent advances in capacitance type of blade tip clearance measurements

Two recent electronic advances at NASA-Lewis that meet the blade tip clearance needs of a wide class of fans, compressors, and turbines are described. The first is a frequency modulated (FM) oscillator that requires only a single low cost ultrahigh frequency operational amplifier. Its carrier frequency is 42.8 MHz when used with a 61 cm long hermetically sealed coaxial cable. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a typical rotor blade. High temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum which produces a clearance error of + or - 10 microns at a clearance of 500 microns. In the second advance, a guarded probe configuration allows a longer cable capacitance. The capacitance of the probe is part of a small time constant feedback in a high speed operational amplifier. The solution of the governing differential equation is applied to a ramp type of input. The results show an amplifier output that contains a term which is proportional to the derivative of the feedback capacitance. The capacitance is obtained by subtracting a balancing reference channel followed by an integration stage.

Barranger, John P.↗
NASA NTRS1988

Recent advances in capacitance type of blade tip clearance measurements

Two recent electronic advances at NASA-Lewis that meet the blade tip clearance needs of a wide class of fans, compressors, and turbines are described. The first is a frequency modulated (FM) oscillator that requires only a single low cost ultrahigh frequency operational amplifier. Its carrier frequency is 42.8 MHz when used with a 61 cm long hermetically sealed coaxial cable. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a typical rotor blade. High temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum which produces a clearance error of + or - 10 microns at a clearance of 500 microns. In the second advance, a guarded probe configuration allows a longer cable capacitance. The capacitance of the probe is part of a small time constant feedback in a high speed operational amplifier. The solution of the governing differential equation is applied to a ramp type of input. The results show an amplifier output that contains a term which is proportional to the derivative of the feedback capacitance. The capacitance is obtained by subtracting a balancing reference channel followed by an integration stage.

Barranger, John P.↗
NASA NTRS1982

Low-Noise Band-Pass Amplifier

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Kleinberg, L.↗
NASA NTRS1989

Crystal oscillators using negative voltage gain, single pole response amplifiers

A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.

Kleinberg, Leonard L.↗
NASA NTRS1984

The 30 GHz solid state amplifier for low cost low data rate ground terminals

This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.

Ngan, Y. C.↗