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We report the successful operation of a superconducting niombium nitride (NbN) Josephson Junction-based analog-to-digital converter (ADC) in an infrared imaging system.
We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is oprated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier.
Topics covered include: Improved Instrument for Detecting Water and Ice in Soil; Real-Time Detection of Dust Devils from Pressure Readings; Determining Surface Roughness in Urban Areas Using Lidar Data; DSN Data Visualization Suite; Hamming and Accumulator Codes Concatenated with MPSK or QAM; Wide-Angle-Scanning Reflectarray Antennas Actuated by MEMS; Biasable Subharmonic Membrane Mixer for 520 to 600 GHz; Hardware Implementation of Serially Concatenated PPM Decoder; Symbolic Processing Combined with Model-Based Reasoning; Presentation Extensions of the SOAP; Spreadsheets for Analyzing and Optimizing Space Missions; Processing Ocean Images to Detect Large Drift Nets; Alternative Packaging for Back-Illuminated Imagers; Diamond Machining of an Off-Axis Biconic Aspherical Mirror; Laser Ablation Increases PEM/Catalyst Interfacial Area; Damage Detection and Self-Repair in Inflatable/Deployable Structures; Polyimide/Glass Composite High-Temperature Insulation; Nanocomposite Strain Gauges Having Small TCRs; Quick-Connect Windowed Non-Stick Penetrator Tips for Rapid Sampling; Modeling Unsteady Cavitation and Dynamic Loads in Turbopumps; Continuous-Flow System Produces Medical-Grade Water; Discrimination of Spore-Forming Bacilli Using spoIVA; nBn Infrared Detector Containing Graded Absorption Layer; Atomic References for Measuring Small Accelerations; Ultra-Broad-Band Optical Parametric Amplifier or Oscillator; Particle-Image Velocimeter Having Large Depth of Field; Enhancing SERS by Means of Supramolecular Charge Transfer; Improving 3D Wavelet-Based Compression of Hyperspectral Images; Improved Signal Chains for Readout of CMOS Imagers; SOI CMOS Imager with Suppression of Cross-Talk; Error-Rate Bounds for Coded PPM on a Poisson Channel; Biomorphic Multi-Agent Architecture for Persistent Computing; and Using Covariance Analysis to Assess Pointing Performance.
The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at ~150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to ~6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.
The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.
In this paper we give a detailed analysis of the expected sensitivity and operating conditions in the power detection mode of a hot-electron bolometer (HEB) made from a few micro m(sup 2) of monolayer graphene (MLG) flake which can be embedded into either a planar antenna or waveguide circuit via NbN (or NbTiN) superconducting contacts with critical temperature approx. 14 K. Recent data on the strength of the electron-phonon coupling are used in the present analysis and the contribution of the readout noise to the Noise Equivalent Power (NEP) is explicitly computed. The readout scheme utilizes Johnson Noise Thermometry (JNT) allowing for Frequency-Domain Multiplexing (FDM) using narrowband filter coupling of the HEBs. In general, the filter bandwidth and the summing amplifier noise have a significant effect on the overall system sensitivity.
Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.
III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterostructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation-recombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm sq cm for a 9.9 micron cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody D* of 1.1x10(exp 11) cm Hz1/2/W.
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The initial BIRD devices (such as the nBn and the XBn) used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2μm and ~4μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5μm) MWIR atmospheric transmission window. The T2SL BIRD devices not only covers the full MWIR atmospheric transmission window, but the full LWIR atmospheric transmission window and beyond. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability.
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The initial BIRD devices (such as the nBn and the XBn) used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2μm and ~4μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5μm) MWIR atmospheric transmission window. The T2SL BIRD devices not only covers the full MWIR atmospheric transmission window, but the full LWIR atmospheric transmission window and beyond. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability.
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in recent years as a viable infrared detector material. In particular, mid-wavelength InAs/InAsSb T2SLS focal plane array (FPA) based on the nBn detector architecture exhibits good operating characteristics at 160 K, demonstrating a considerably operating temperature advantage over InSb FPAs. In the long and very long cutoff wavelengths, InAs/InAsSb T2SLS detectors with n-type absorbers are limited in their attainable quantum efficiency (QE) due to shorter hole diffusion lengths and relatively modest absorption coefficients. We have explored long and very long wavelength InAs/InAsSb T2SLS complementary barrier infrared detectors (CBIRDs) that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for QE enhancement. We also discuss recent development of the InAs/InAsSb T2SLS infrared detectors at the Jet Propulsion Laboratory for NASA Earth Science applications, including long-wavelength infrared FPAs for land imaging, and mid-wavelength infrared FPAs for CubeSat hyperspectral imaging.