Annealing of high energy proton damage in silicon.
High energy proton irradiation and annealing of n and p type Si, comparing proton and electron damage
SILICON JUNCTION↗
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High energy proton irradiation and annealing of n and p type Si, comparing proton and electron damage
Li containing p-on-n and n-on-p Si cell degradation by bombardment noting carrier removal damage, annealing and radiation damage resistance
In this paper, the mathematical formalism of quantum resonance combined with tensor product decomposability of unitary evolutions is mapped onto a class of NP-complete combinatorial problems.