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At least 73 records · Page 4

Thermal conductivity of multilayer polymer-nanocomposite thin films

The development of electrical insulators that are thermally conducting is critical for thermal management applications in many advanced electronics and electrical devices. Here, we synthesized polymer nanocomposite (PNC) films composed of polymers [polyethylenimine, poly(vinylamine), poly(acrylic acid), and poly(ethylene oxide)] and dielectric fillers (montmorillonite clay and hexagonal boron nitride) by layer-by-layer technique. The cross-plane thermal conductivity (k⊥) of the film was measured by the 3ω method. The effect of various factors such as film growth, filler type, filler volume fraction, polymer chemical structures, and temperature on the thermal conductivity is reported. The k⊥ of PNCs with thickness from 37 nm to 1.34 μm was found to be in the range of 0.11 to 0.21 ± 0.02 W m−1 K−1. The k⊥ values were found to be lower than the constituent polymer matrix. The experimental result is compared with existing theoretical models of nanocomposite systems to get insight into heat transfer behavior in such layered films composed of dielectrics and polymers.

Physics↗

Degradation of REBCO coated conductors due to a combination of epoxy impregnation, thermal cycles, and quench: Characteristics and a method of alleviation

REBa2Cu3Ox (REBCO) coated conductors are an enabling technology for >1 GHz nuclear magnetic resonance spectrometers that need >23.5 T solenoids, compact high-field fusion reactors beyond the International Thermonuclear Experimental Reactor, and 20 T class accelerator magnets. An in-depth understanding of stress and strain management is critically needed for these applications. Here, we report experimental data and an analysis of damages of REBCO-coated conductors in several scenarios relevant for their applications in high-field magnets and unique to their multi-layer thin film structure. The examined scenarios include failure induced by quench, failure induced by epoxy impregnation, and failure induced by a combination of epoxy impregnation and quench. The root cause is film blistering and peeling induced by thermally interfacial stresses characteristic of multilayered heteroepitaxial thin film structures on thick substrates utilized. The quantitative stress analysis is introduced using simple and easy to use formulas and clearly indicates how materials and structural characteristics affect the magnitude and the distribution of stresses and deflections. Finally, a simple method is introduced for removing degradation of REBCO coated conductors due to epoxy impregnation. Our data and analysis help our understanding of the practical limit of REBCO-coated conductors and can be utilized as a guidance for the physical design of REBCO coated conductors and high-current cables assembled from them and for minimizing damages.

Yin, Shijian (ORCID:0000000224312274)↗

Characterization facility for magneto-optic media and systems

Objectives of this research are: (1) to measure the hysteresis loop, Kerr rotation angle, anisotropy energy profile, Hall voltage, and magnetoresistance of thin-film magneto-optic media using our loop-tracer; (2) measure the wavelength-dependence of the Kerr rotation angle, Theta(sub k), and ellipticity, epsilon(sub k), for thin-film media using our magneto-optic Kerr spectrometer (MOKS); (3) measure the dielectric tensor of thin-film and multilayer samples using our variable-angle magneto-optic ellipsometer (VAMOE); (4) measure the hysteresis loop, coercivity, remanent magnetization, saturation magnetization, and anisotropy energy constant for thin film magnetic media using vibrating sample magnetometry; (5) observe small magnetic domains and investigate their interaction with defects using magnetic force microscopy; (6) perform static read/write/erase experiments on thin-film magneto-optic media using our static test station; (7) integrate the existing models of magnetization, magneto-optic effects, coercivity, and anisotropy in an interactive and user-friendly environment, and analyze the characterization data obtained in the various experiments, using this modeling package; (8) measure focusing- and tracking-error signals on a static testbed, determine the 'feedthrough' for various focusing schemes, investigate the effects of polarization and birefringence, and compare the results with diffraction-based calculations; and (9) measure the birefringence of optical disk substrates using two variable angle ellipsometers.

Mansuripur, M.↗

Second-Order Josephson Effect in Excitonic Insulators

We show that in electron-hole bilayers with excitonic orders arising from conduction and valence bands formed by atomic orbitals that have different parities, nonzero interlayer tunneling leads to a second-order Josephson effect. This means the interlayer electrical current is related to the phase of the excitonic order parameter as J = J c sin 2θ instead of J = J c sin θ and that the system has two degenerate ground states at θ = 0, π that can be switched by an interlayer voltage pulse. When generalized to a three dimensional stack of alternating electron-hole planes or a two dimensional stack of chains, the ac Josephson effect implies that electric field pulses perpendicular to the layers and chains can steer the order parameter phase between the two degenerate ground states, making these devices ultrafast memories. Here, the order parameter steering also applies to the excitonic insulator candidate Ta 2 NiSe 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Design nanoporous metal thin films via solid state interfacial dealloying

Thin-film solid-state interfacial dealloying (thin-film SSID) is an emerging technique to design nanoarchitecture thin films. The resulting controllable 3D bicontinuous nanostructure is promising for a range of applications including catalysis, sensing, and energy storage. Using a multiscale microscopy approach, we combine X-ray and electron nano-tomography to demonstrate that besides dense bicontinuous nanocomposites, thin-film SSID can create a very fine (5–15 nm) nanoporous structure. Not only is such a fine feature among one of the finest fabrications by metal-agent dealloying, but a multilayer thin-film design enables creating nanoporous films on a wider range of substrates for functional applications. Through multimodal synchrotron diffraction and spectroscopy analysis with which the materials’ chemical and structural evolution in this novel approach is characterized in details, we further deduce that the contribution of change in entropy should be considered to explain the phase evolution in metal-agent dealloying, in addition to the commonly used enthalpy term in prior studies. Here, the discussion is an important step leading towards better explaining the underlying design principles for controllable 3D nanoarchitecture, as well as exploring a wider range of elemental and substrate selections for new applications.

36 MATERIALS SCIENCE↗

Unsupported thin film beam splitter

Multilayer beam splitter system yielding nearly equal broadband infrared reflectance and transmittance in the 5 to 50 micron spectral region has been developed which will significantly reduce size and cost of light path compensating devices in infrared spectral instruments.

Bastien, R. C.↗

Magnetic Field Penetration Technique to Study High Field Shielding of Multilayered Superconductors

The SIS structure which consists of alternative thin layers of superconductors and insulators on a bulk niobium has been proposed to shield niobium cavity surface from high magnetic field and hence increase the accelerating gradient. The study of the behavior of multilayer super-conductors in an external magnetic field is essential to optimize their SRF performance. In this work we report the development of a simple and efficient technique to measure penetration of magnetic field into bulk, thin film and multilayer superconductors. Experimental setup contains a small superconducting solenoid which can produce a parallel surface magnetic field up to 0.5 T and Hall probes to detect penetrated magnetic field across the superconducting sample. This system was calibrated and used to study the effect of niobium sample thickness on the field of full magnetic flux penetration. We determined the optimum thickness of the niobium substrate to fabricate the multilayer structure for the measurements in our setup. This technique was used to measure penetration fields of Nb₃Sn thin films and Nb₃Sn/Al₂O₃ multi-layers deposited on Al₂O₃ wafers.

Senevirathne, I. H.↗

Dual Mechanism for Transient Capacitance Anomaly in Improper Ferroelectrics

Negative capacitance (NC) effects in ferroelectrics can potentially break fundamental limits of power dissipation known as “Boltzmann tyranny.” However, the origin of transient NC of ferroelectrics, which is attributed to two different mechanisms involving free-energy landscape and nucleation, is under intense debate. Here, we report the coexistence of transient NC and an S-shaped anomaly during the switching of ferroelectric hexagonal ferrites capacitor in an RC circuit. The early-stage NC arises from the nucleation process, while the late-stage S-shaped anomaly corresponds to a nascent NC associated with the free-energy landscape. The entire waveform can be reproduced using a hybrid model that simultaneously incorporates these two mechanisms. These results highlight the multivariable free-energy landscape of hexagonal ferrites that enables an abrupt change of the internal field and demonstrate that the two mechanisms are not mutually exclusive, resolving the long-standing debate. In conclusion, the behavior of the S-shaped anomaly also provides a pathway to extract parameters of free-energy landscape and switching dynamics.

Capacitance↗

Stress Compensating Multilayers

We present in-situ stress measurement results for single and multilayer thin-films deposited by magnetron sputtering. In particular, we report on the influence of the material interfaces on the ensuing stress in both the transient and steady-state regimes of film growth. This behavior is used to determine the appropriate thicknesses of the constituent layers that will result in a net tensile stress in multilayers composed of various material combinations. These multilayers can then be used to compensate the compressive integrated stress in single and multilayer EUV and x-ray optical coatings. The use of multilayers to compensate the integrated stress might be advantageous because, unlike single layers of chromium, the roughness is not expected to increase with the total thickness of the multilayer. In this paper, we demonstrate the technique for W/Si and Mo/Si multilayers and discuss its application to other material combinations.

Multilayer↗

Comparison of damage and ablation dynamics of multilayer dielectric films initiated by few-cycle pulses versus longer femtosecond pulses

The importance of high intensity few- to single-cycle laser pulses for applications such as intense isolated attosecond pulse generation is constantly growing, and with the breakdown of the monochromatic approximation in field ionization models, the few-cycle pulse (FCP) interaction with solids near the damage threshold has ushered a new paradigm of nonperturbative light–matter interaction. In this Letter, we systematically study and contrast how femtosecond laser-induced damage and ablation behaviors of SiO 2 /HfO 2 -based reflective multilayer dielectric thin film systems vary between FCP and 110 fs pulses. With time-resolved surface microscopy and ex situ analysis, we show that there are distinct differences in the interaction depending on the pulse duration, specifically in the “blister” morphology formation at lower fluences (damage) as well as in the dynamics of debris formation at higher fluences (ablation).

42 ENGINEERING↗

Interface diagnostics platform for thin-film solid-state batteries

Understanding the impedances of battery materials and their interfaces remains a major challenge, usually addressed by electrochemical impedance spectroscopy (EIS) where frequency-dependent complex impedance of full battery cells is measured and then modeled by a network of connected electrical elements. As conventionally applied, this approach produces ambiguity in that (1) multiple different network configurations may fit the data convincingly and (2) the method offers no direct association of the electrical elements with physical features of the battery. Here we present a new methodology that resolves both sources of ambiguity, enabled by expanding the experimental scope to directly inform the configuration of elements and their parameters in the network model. We demonstrate this methodology using thin film fabrication of solid state battery devices patterned by shadow masked sputter deposition, so that diagnostic devices corresponding to individual interface and material components can be fabricated simultaneously with full cell batteries. EIS models for the diagnostic devices can then be connected to form full cell networks whose topology matches the well-known physical configuration of the battery. When connected in this way, the full network model – made from connecting the diagnostic device EIS models – fits the full cell EIS data. For the case of a thin film solid state battery composed of amorphous silicon anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and lithium vanadium oxide (Li x V 2 O 5 ) cathode, we show that the approach allows us to identify ionic impedance/conductivity of the cathode/electrolyte as a limiting impedance and the anode/electrolyte interface cycling instability as a primary degradation factor.

25 ENERGY STORAGE↗

Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect

We measured spin Seebeck signals at the top and bottom surfaces of an antiferromagnetic Cr 2 O 3 film, using a Pt/Cr 2 O 3 /Pt trilayer. Our experimental data, combined with micromagnetic simulations, clearly demonstrate that the uncompensated sublattice at the top and bottom surfaces plays a decisive role in determining the symmetry of the spin Seebeck signals, providing fundamental insight for understanding the generation of spin Seebeck signal in antiferromagnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anomalous superconducting diode effect in a polar superconductor

A superconductor with broken time-reversal and inversion symmetry may exhibit nonreciprocal charge transport, including a nonreciprocal critical current, also known as superconducting diode effect. Here, we report an intrinsic superconducting diode effect in a polar strontium titanate film. Differential resistance measurements reveal a superconducting state whose depairing current is polarity dependent. There is, however, no measurable deviation from Ohmic behavior, implying that this state does not arise from a bulk magnetochiral anisotropy. In the entire measurement range, the only deviation from linearity in the differential resistance is on the edge of the superconducting transition at high magnetic fields, likely due to the motion of flux vortices. Furthermore, the magnitude of the effect is preserved even when the in-plane magnetic field is oriented parallel to the current, indicating that this effect truly does not originate from a bulk magnetochiral anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large spin-to-charge conversion in ultrathin gold-silicon multilayers

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.

36 MATERIALS SCIENCE↗

Synthesis, microstructure and micro-mechanical characterization of metal (Nb, Ti) – MAX phase (Ti 2 AlC) nanolaminates

We utilize elevated temperature physical vapor deposition (PVD) techniques to design metal/MAX multilayered nanocomposite thin films with alternating nanoscale metallic (Nb, Ti) and MAX phase (Ti 2 AlC) layer thicknesses. These metal/MAX nanolaminate architectures attempt to exploit a unique hierarchical topology – as interfaces between the layers are expected to be in direct competition with the internal interfaces within the MAX layers, to drive their tunable macroscopic mechanical behavior. Two metal/MAX nanolaminates – Nb/Ti 2 AlC and Ti/Ti 2 AlC – were deposited. The Nb/Ti 2 AlC metal/MAX system showed highly diffused layer interfaces with distinct Ti – rich and Nb–Al – rich layers, with the presence of MAX phase alongside TiC and other Ti–Al and Nb–Al intermetallic phases. The Nb/Ti 2 AlC system possessed a layered architecture, though the MAX phases were not found to be continuously present in each alternating layer. The second Ti/Ti 2 AlC system showed a non-lamellar nanocomposite microstructure and the formation of mixed Ti n+1 AlC n phases (a mix of n = 1, 2), and no indication of layering. Diffusion occurring between the metal/MAX layers in both cases, likely due to the elevated temperatures during the deposition process, is speculated as the likely cause of these resultant microstructures. The mechanical properties of both systems were evaluated using micromechanical (nanoindentation and micro-pillar compression) techniques, which demonstrated high strengths for both systems (Nb system: yield and instability strengths of 4.88 ± 0.1 GPa and 5.57 ± 0.03 GPa, Ti system: yield and instability strength of 5.61 ± 0.28 GPa and 6.21 ± 0.25 GPa). In conclusion, this work highlights the promising mechanical properties of metal/MAX multilayered depositions and summarizes the challenges in PVD synthesis of metal/MAX multilayered nanolaminates.

MAX phase↗

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (V OC,in ), measured by photoluminescence, and the external open-circuit voltage (V OC,ex ) i.e. an additional V OC deficit. Higher V OC,ex value aim require a comprehensive understanding of connection between V OC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between V OC ,in and V OC,ex . The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local V OC ,in near the absorber/buffer interface leading to a V OC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the V OC ,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices.

14 SOLAR ENERGY↗

Tunable rainbow light trapping in ultrathin resonator arrays

Abstract Rainbow light trapping in plasmonic devices allows for field enhancement of multiple wavelengths within a single device. However, many of these devices lack precise control over spatial and spectral enhancement profiles and cannot provide extremely high localised field strengths. Here we present a versatile, analytical design paradigm for rainbow trapping in nanogroove arrays by utilising both the groove-width and groove-length as tuning parameters. We couple this design technique with fabrication through multilayer thin-film deposition and focused ion beam milling, which enables the realisation of unprecedented feature sizes down to 5 nm and corresponding extreme normalised local field enhancements up to 10 3 . We demonstrate rainbow trapping within the devices through hyperspectral microscopy and show agreement between the experimental results and simulation. The combination of expeditious design and precise fabrication underpins the implementation of these nanogroove arrays for manifold applications in sensing and nanoscale optics.

42 ENGINEERING↗

Excitation of Bloch Surface Waves in Zero-Admittance Multilayers for High-Sensitivity Sensor Applications

The growing need for classical as well as quantum optical sensing places increasingly stringent requirements upon the desired characteristics of the engendered fields. Specifically, achieving superior field enhancement plays a critical role in applications ranging from chem-bio sensing, Raman and infrared spectroscopies to ion trapping and qubit control in emerging quantum-information science. Due to their low optical losses and ability to exhibit resonant field enhancements, all dielectric multilayers are emerging as an optical material system not only useful to classical photonics and sensing but also of potential to be integrated with quantum materials and quantum sensing. The recently introduced concept of zero-admittance layers [1] within dielectric multilayer materials, enables the creation and control of resonant fields orders of magnitude larger than the exciting field. Here, invoking the zero-admittance concept, we design, fabricate, and characterize an all-dielectric nonabsorbing stack and demonstrate the engendered huge field enhancement. Describing the fields in terms of Bloch surface waves, we connect the surface field to the semiperiodicity in the dielectric domains of the stack. As a specific application of the resonant field, we propose and demonstrate refractive-index sensing for the detection of trace amounts of an analyte. The results include a quantification of the sensitivity of the device with respect to the profile of the exciting field. The experimental results are shown to be in good agreement with theoretical calculations.

47 OTHER INSTRUMENTATION↗