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At least 73 records · Page 4

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NASA NTRS1998

Crystal Growth of Mixed Optical Materials With the Automatic Czochralski Puller

Most of optical and semiconductor single crystalline materials produced in the electronic industry is grown with the Czochralski technique. This is the only technique capable of producing large high quality single crystals in a reasonable amount of time. The technique originated, and took its name, from pioneering work by Polish engineer J. Czochralski in 1917, who pulled single crystal wires (fibers) of low melting point metals from the melt in order to determine the maximum speeds at which they could be crystallized. The technique has been modified and its application has been extended first to the growth of silicon and later to a very wide range of compound semiconductors, metals, oxides and halides. It is now the dominant technique for the wide range of materials in the electronic industries. Czochralski growth is initiated by dipping a seed crystal of a chosen crystallographic orientation onto the surface of a melt contained in the heated crucible. The seed is then slowly withdrawn, solidifying the adherent column of the melt in steady state at an average rate given by the sum of the pulling rate and the rate of lowering the solid-liquid interface due to the depletion of the melt in the crucible. The control of the desired crystal diameter is achieved by closely controlling the heat balance at the solid-liquid interface.

Loutts, George B.↗

NASA NTRS1972

Determination of work functions near melting points of refractory metals by using a direct-current arc

Effective work functions of refractory metals at temperatures near their melting points were determined by using a direct-current arc. A metal wire connected as the cathode was melted by striking an arc discharge in an argon atmosphere. A melted sphere was formed with a definite emitting area which was calculated from the sphere diameter measured after terminating the arc. Effective work functions were calculated from the Richardson-Dushman equation by using this emission area. The procedure is experimentally advantageous because surface cleanliness of the specimen is not critical, high vacuum is not required, and the anode-cathode spacing is not critical.

Gordon, W. A.↗

DOE OSTI2023

Oxide Dispersion Strengthened Ferritic Steel Wire Feedstock Development for Large Format Additive Manufacturing - CRADA 620 (Abstract)

This CRADA project funded through DOE’s INFUSE program seeks to demonstrate the viability of fabricating large, complex parts from oxide dispersion strengthened (ODS) steel with advanced manufacturing. Exhibiting excellent radiation tolerance and high mechanical performance at elevated temperatures, ODS steel is a promising structural material candidate for near-plasma components in fusion energy systems. Its use, however, has been limited by a lack of manufacturability. This project will seek to produce ODS steel wire through a solid-state shear assisted extrusion process and then demonstrate that the wire can undergo controlled local melting while being welded with the final part sufficiently retaining the beneficial properties of ODS steel. This would allow the use of wire-arc additive manufacturing (WAAM) to manufacture large-scale ODS parts, even though ODS is currently only available as a powder. WAAM is a promising technique for producing components like the replaceable ARC vacuum vessel in CFS’ fusion reactor design. Meanwhile, this project will also expand PNNL’s capability in producing custom wire feedstock with friction extrusion, enabling downstream large-scale manufacturing with WAAM and solid-state based additive manufacturing.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Oxide Dispersion Strengthened Ferritic Steel Wire Feedstock Development for Larger Format Additive Manufacturing (CRADA Final Report)

This CRADA project funded through DOE’s INFUSE program sought to demonstrate the viability of fabricating large, complex parts from oxide dispersion strengthened (ODS) steel with advanced manufacturing. Exhibiting excellent radiation tolerance and high mechanical performance at elevated temperatures, ODS steel is a promising structural material candidate for near-plasma components in fusion energy systems. Its use, however, has been limited by a lack of manufacturability. This project sought to produce ODS steel wire through a solid-state shear assisted extrusion process and then demonstrate that the wire can undergo controlled local melting while being welded with the final part sufficiently retaining the beneficial properties of ODS steel. This would allow the use of wire-arc additive manufacturing (WAAM) to manufacture large-scale ODS parts, even though ODS is currently only available as a powder. WAAM is a promising technique for producing components like the replaceable ARC vacuum vessel in CFS’ fusion reactor design. Meanwhile, this project will also expand PNNL’s capability in producing custom wire feedstock with friction extrusion, enabling downstream large-scale manufacturing with WAAM and solid-state based additive manufacturing. The project achieved its goals of developing tooling and fixturing to produce ODS wire at smaller diameters than previous projects. Several small lengths of wire of 1.5 mm and 2.5 mm diameter in the range of 2.5-30 mm long were produced at tool temperatures that are known to cause ODS particle coarsening (~1200 °C). Fixtures and tooling for longer (>1 m) wires were developed but further process development is needed reduce tool temperature during extrusions and to increase wire length needed for WAAM testing and development.

36 MATERIALS SCIENCE↗

NASA NTRS1987

Apparatus ad method for quiescent containerless processing of high temperature metals and alloys in low gravity

The electron bombardment furnace consists of two confinement grid sections which may be moved and separated from each other. Inside the bombardment furnace, a tungsten element is enclosed. The material specimen is located within the tungsten element and grounded by means of grounded support wires connected to the respective sections of the furnace. The material specimen is supported on the ground wires and heated by electron bombardment until melt occurs. The furnace sections are separated in opposite directions causing the ground wires to pull from the surfaces of the specimen, leaving the specimen freely suspended in the process chamber without the action of external forces. The specimen remains in its melt condition in the processing chamber where it can be undercooled without external forces acting on the specimen, which would cause dynamic nucleation.

Robinson, Michael B.↗

NASA NTRS1973

Determination of work functions near melting points of refractory metals by using a direct-current arc.

A direct-current arc in argon at atmospheric pressure was used to determine effective work functions of refractory metals, including tantalum, tungsten, molybdenum, and niobium. The procedure is experimentally advantageous, because surface cleanliness of the specimen is not critical, high vacuum is not required, and the anode-cathode spacing is not critical. The experimental procedure involves striking an arc to a metal wire cathode to form a melted ball having an emitting area defined by its diameter. The literature melting point of the metal is taken as the emitting temperature. By using these parameters and the known arc current, effective work functions were calculated from the Richardson-Dushman equation. The calculated work functions agree with recommended handbook values to within about 0.1 V and have typical repeatabilities of 0.02 V.

Gordon, W. A.↗

NASA NTRS1973

Toward understanding the conical arc-chamber driver

The mechanical and electrical characteristics of the conical arc-chamber driver and the 1450-microfarad capacitor bank are described. The system dynamic performance can be approximated by a second-order nonlinear equation. The discharge of the capacitor bank into the conical arc-chamber was investigated at a variety of initial conditions. Details of the discharge are explained and compared for typical performance with both hydrogen and helium arc-chamber gases. At peak current the hydrogen plasma resistivity is significantly higher than that of the helium plasma and this, in part, accounts for the better shock speed performance with hydrogen. The lower melting and boiling point exploding wires of aluminum, copper, and stainless steel produced higher shock speed performance than the apparently nonexploding tungsten wire.

Livingston, F. R.↗

NASA NTRS1981

High temperature (Al2O3) insulation and light weight conductors

The of an aluminum conductor with an aluminum oxide insulation film was investigated. Aluminum oxide insulated wire or strip (with a melting point of 2050 C) is unique for applications in the electronic, missile, atomic reactor, aerospace, and aircraft industries. The oxide film is highly flexible, suitable for all windings of any size and shape of coil (magnetic). Briefly touched upon are the ultraviolet, proton gamma radiation uses, as well as high vacuum and cryogenic applications. Since the film is inorganic and chemically inert, it does not age or deteriorate in storage and has good dielectric properties (1000 volts per mil).

Walker, H.↗

NASA NTRS1994

Two-Zone Bridgman Furnace With Sharp Thermal Gradient

Two-zone vertical directional-solidification furnace designed and built to grow crystals from stoichiometric and nonstoichiometric melts and from solutions. Includes conventional wire heater in lower zone, tubular silicon carbide heating element in upper zone, and thermal baffle between zones. Temperature gradients up to 125 degrees centigrade per centimeter achieved in the crystal-growth region. Sharper gradient enables both faster growth and better separation between solid and liquid. Furnace used in laboratory or industrial setting for growth of crystals from congruently melting materials as well as for growth of compounds formed by peritectic reactions.

Borshchevsky, Alex↗

NASA NTRS1984

Solar concentrator protective system

A mechanism that blocks concentrated sunlight from reaching a receiver, in the event of a tracking failure or loss of coolant is described. Sunlight is normally concentrated by a dish reflector onto the opening of a receiver. A faceplate surrounds the opening, and coolant carrying tubes, line the receiver. If the concentrated sunlight wanders so it begins to fall on the faceplate, then the sunlight will melt a portion of a fuse wire portion will break. The wire is attached to a flange on a shutter frame, and breaking of the fuse wire allows the frame to fall. Normally, the shutter frame supports shutter elements that are held open by cam followers that bear against cams.

Selcuk, M. K.↗

NASA NTRS1983

Laser Wire Stripper

NASA-developed space shuttle technology is used in a laser wire stripper designed by Raytheon Company. Laser beams cut through insulation on a wire without damaging conductive metal, because laser radiation that melts plastic insulation is reflected by the metal. The laser process is fast, clean, precise and repeatable. It eliminates quality control problems and the expense of rejected wiring.

Source record↗

NASA NTRS1995

Development of LaRC (TM): IA thermoplastic polyimide coated aerospace wiring

NASA Langley has invented LaRC(exp TM) IA and IAX which are thermoplastic polyimides with good melting, thermal and chemical resistance properties. It was the objective of this contract to prepare and extrude LaRC (exp TM) polyimide onto aircraft wire and evaluate the polymers performance in this critical application. Based on rheology and chemical resistance studies at Imitec, LaRC (exp TM) IAX melts readily in an extruder, facilitating the manufacture of thin wall coatings. The polyimide does not corode the extruder, develop gel particles nor advance in viscosity. The insulated wire was tested according to MiL-W-22759E test specifications. The resulting wire coated with LaRC (exp TM) IAX displayed exceptional properties: surface resistance, non blocking, non burning, hot fluid resistance, impulse dielectric, insulation resistance, low temperature flexibility, thermal aging, wire weight, dimensions, negligible high temperature shrinkage and stripability. The light weight and other properties merit its application in satellites, missiles and aircraft applications. The extruded IAX results in a polyimide aircraft insulation without seams, outstanding moisture resistance, continuous lengths and abrasion resistance.

Keating, Jack↗

NASA NTRS2019

Self-Healing Polymer Materials for Wire Insulation, Polyimides, Flat Surfaces, and Inflatable Structures

Materials based on low melt polyimide, polyurea, or polyurethane chemistry have been developed which exhibit self-healing properties. These high performance polymers can be utilized either by themselves or in combination with microcapsule technology to deliver self-healing properties to electrical wire insulation or in other high performance, thin wall technologies such as inflatable structures.

Jolley, Scott T.↗

NASA NTRS1983

Electrical resistivity of composite superconductors

In addition to its superconducting properties, a superconductor is usually characterized by poor thermal conductivity and relatively high electrical resistivity in the normal state. To remedy this situation a study of superconducting properties of Cu-rich CU-Nb wires prepared by directionally solidified and cold-rolled technique was conducted. Some of the specimens were prepared by melting, directional solidification and diffusing in Tin. A total of 12 wire specimens was tested. Each specimen was analyzed by plotting experimental data into the following curves: the graph of the residual resistivity as a function of the specimen current at 4.3 K; and the graph of the electrical resistivity as a function of the temperature at a constant current.

Davis, J. H.↗

NASA NTRS2008

Miniature, Lightweight, One-Time-Opening Valve

The figure depicts the main parts of a prototype miniature, lightweight, onetime- opening valve. Like some other miniature one-time-opening valves reported in previous issues of NASA Tech Briefs, this valve is opened by melting a material that blocks the flow path. This valve is designed to remain closed at some temperature between room temperature and cryogenic temperature until the time of opening. The prototype valve includes a 1/8-in. (3-mm) aluminum tube, one end of which is plugged with a solder comprising about 37 weight percent of lead and 63 weight percent of tin. The tube and the solder both have a coefficient of thermal expansion of 23 micron/m-K at room temperature. Before plugging, the interior surface of the plug end of the tube is cleaned with a commercial flux paste developed specifically for preparing aluminum for bonding with lead/tin solder. The solder is then melted into the cleaned end of the tube, forming the plug. In a test, the plugged tube was pressurized to 1,000 psi (6.9 MPa) with helium and leak-tested. It was then cooled to a temperature of 77 K (about 196 C) and again leak-tested at the same pressure. Finally, at a lower pressure, the plugged end of the tube was heated to about 200 C (the melting temperature of the solder is 183 C), causing the solder plug to be ejected (see figure). It has been estimated that in a subsequent version of the valve, the plug could be melted by electrical heating, using a nichrome wire having a mass of only 10 g.

Jones, Jack↗

NASA NTRS1989

Thermocapillary convection in zone-melting crystal growth - An open-boat physical simulation

Thermocapillary convection in a molten zone of NaNO3 contained in a boat with a free horizontal surface, that is heated from above by a centered wire heater, was studied to simulate flow in zone-melting crystal growth. Using a laser-light-cut technique and fine SiO powder as a tracer, convection in the melt zone was visualized in two different cases. In the first case, the entire melt surface was free, while in the second the melt surface was free only in the immediate vicinity of one vertical wall and was covered elsewhere, this wall being to simulate the melt/crystal interface during crystal growth. It was observed that thermocapillary convection near this wall prevailed in the first case, but was reduced significantly in the second. Since thermocapillary rather than natural convection dominated in the melt, the effect of the partial covering of the melt surface on thermocapillary convection in the melt observed in this study is expected to be similar under microgravity.

Kim, Y. J.↗

NASA NTRS1991

The high-pressure melting curve of iron - A technical discussion

The melting curve of iron is reliably determined to 105 GPa using the laser-heated diamond cell, in close agreement with independent measurements using piston-cylinder and large-volume presses or shock-wave experiments. In order to obtain reliable melting data from the internally heated diamond cell, whether by laser or Joule heating, temperature gradients across the sample must be quantitatively measured; otherwise, such 'wire heating' experiments can lead to significant underestimates of the melting temperature and its pressure dependence. The best estimate of the high-pressure melting curve of iron, as derived from the laser-heated diamond cell and Hugoniot temperature measurements, yields melting temperatures of 4800 + or - 200 K and 6700 + or - 400 K at 133 GPa and 243 GPa, respectively.

Williams, Quentin↗

NASA NTRS2012

Iridium Interfacial Stack - IrIS

Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the SiC chip circuitry.

Spry, David↗