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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗
NASA NTRS1996

Effects of Lattice Distortion and Jahn-Teller Coupling on the Magnetoresistance of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

Studies of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) epitaxial films on substrates with a range of lattice constants reveal two dominant contributions to the occurence of colossal negative magnetoresistance (CMR) in these manganites:...We therefore suggest that lattice polaron conduction associated with Jahn-Teller coupling is essential for the occurence of CMR, and that lattice distortion further enhances the CMR effect in the manganites.

lattice distortion epitaxial films lattice polaron↗
NASA NTRS2010

Operation of a Giant Magnetoresistive (GMR) Digital Isolator, Type IL510, Under Extreme Temperatures

A relatively new type of signal isolation based on Giant Magnetoresistive (GMR) technology was investigated for potential use in harsh temperature environments. Operational characteristics of the 2Mbps single channel, IL510-Series commercial-off-the-shelf (COTS) digital isolator chip was obtained under extreme temperature exposure and thermal cycling in the range of -190 C to +120 C. The isolator was evaluated in terms of its output signal delivery and stability, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays at 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PHL)) transitions. The device performed very well throughout the entire test temperature range as no significant changes occurred either in its function or in its output signal timing characteristics. The limited thermal cycling, which comprised of 12 cycles between -190 C and +120 C, also had no influence on its performance. In addition, the device packaging underwent no structural damage due to the extreme temperature exposure. These preliminary results indicate that this semiconductor chip has the potential for use in a temperature range that extends beyond its specified regime. Additional and more comprehensive testing, however, is required to establish its operation and reliability and to determine its suitability for long-term use in space exploration missions.

Patterson, Richard↗
NASA NTRS2014

Evaluation of Magnetoresistive RAM for Space Applications

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Heidecker, Jason↗
DOE OSTI2026

Excitations across the Equilibrium and Photoinduced “Hidden” States of Magnetoresistive Manganites

“Hidden” phases, generated using ultrafast laser pulses (few hundred femtoseconds), with distinct properties than at the thermodynamic equilibrium, are appealing for technologies, as they can be long-lived, with a lifetime of hours or weeks, and reversible with temperature sweeping or extra pulses. In this regard, La 2/3 ⁢Ca 1/3⁢ MnO 3 (LCMO) stands out due to its tunability through epitaxial strain, which can drive the bulk ferromagnetic metal into an antiferromagnetic insulator (AFI), and its susceptibility to photoinduced transitions. Indeed, AFI LCMO displays a long-lived photoinduced transition into a putative hidden phase whose exact nature and excitations are still largely unknown. Here, we combine ultrafast photoexcitation in the near infrared with in situ transport, x-ray absorption, and resonant inelastic x-ray scattering (RIXS) to investigate the excitations (polarons, phonons, and orbital) of the photoexcited phase of LCMO and contrast them with the thermodynamic phases achieved through strain and temperature. In the thermodynamic regime, we establish the correlation between polarons and transport placing them in the “strong coupling” regime of the Holstein model. Upon photoexcitation of LCMO-AFI, we uncover a long-lived phase characterized by the softening of the polaron excitations, the partial suppression of the Jahn-Teller distortion, and nearly unchanged phonons, showing the emergence of a photoexcited state absent in the equilibrium phase diagram. Finally, by varying temperature, epitaxial strain, and photoexcitation fluence, we construct a polaron phase diagram and identify the key spectroscopic signatures of each phase. Our laser-RIXS approach establishes a versatile platform for exploring photoinduced hidden phases in quantum materials in nonstroboscopic conditions.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Upper limit for magnetoresistance in silicon bronze and phosphor bronze wire

The electrical resistivity of silicon bronze and phosphor bronze was measured in magnetic fields from 0 to 14 T and at temperatures between 2 and 300 K. At any fixed temperature, the change in resistivity to 14 T was less than a few parts in 100,000. Thus, these bronzes are excellent for use in high magnetic fields where constant resistance is required. Welding leads to the sample was found to be superior to soldering. The soldered contacts were subject to spurious resistivity changes that resulted from superconducting transitions in the solder.

Feldman, R.↗
NASA NTRS1992

Ultra-dense magnetoresistive mass memory

This report details the progress and accomplishments of Nonvolatile Electronics (NVE), Inc., on the design of the wafer scale MRAM mass memory system during the fifth quarter of the project. NVE has made significant progress this quarter on the one megabit design in several different areas. A test chip, which will verify a working GMR bit with the dimensions required by the 1 Meg chip, has been designed, laid out, and is currently being processed in the NVE labs. This test chip will allow electrical specifications, tolerances, and processing issues to be finalized before construction of the actual chip, thus providing a greater assurance of success of the final 1 Meg design. A model has been developed to accurately simulate the parasitic effects of unselected sense lines. This model gives NVE the ability to perform accurate simulations of the array electronic and test different design concepts. Much of the circuit design for the 1 Meg chip has been completed and simulated and these designs are included. Progress has been made in the wafer scale design area to verify the reliable operation of the 16 K macrocell. This is currently being accomplished with the design and construction of two stand alone test systems which will perform life tests and gather data on reliabiliy and wearout mechanisms for analysis.

Daughton, J. M.↗
NASA NTRS2004

Deep Flaw Detection with Giant Magnetoresistive (GMR) Based Self-Nulling Probe

In this paper a design modification to the Very-Low Frequency GMR Based Self-Nulling Probe has been presented to enable improved signal to noise ratio for deeply buried flaws. The design change consists of incorporating a feedback coil in the center of the flux focusing lens. The use of the feedback coil enables cancellation of the leakage fields in the center of the probe and biasing of the GMR sensor to a location of high magnetic field sensitivity. The effect of the feedback on the probe output was examined, and experimental results for deep flaw detection were presented. The experimental results show that the modified probe is capable of clearly identifying flaws up to 1 cm deep in aluminum alloy structures.

Wincheski, Buzz↗