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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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High Voltage Multiplier: A New, Compact Design using SiC High Frequency MOSFETs
In this report, power supply models for particle accelerators are examined and electrical equivalent model for a high-voltage multiplier power supply is developed. The ultimate goal is to provide the blue prints for the realization of real world models to power both the electrical and magnetic dipoles that make up the key components of the typical particle accelerator assembly.
Comparing Atomic Scale Defects in Radiation and High Field Stress in Si/SiO2 MOSFETs.
Abstract not provided.
Software Development for Data Visualization and Analysis of PN-Diodes & MOSFET Devices
The U.S. Department of Energy has a broad mission to ensure the nation’s security by addressing ongoing environmental challenges, developing novel energy production technologies, and mitigating nuclear security concerns. These efforts benefit from developing more effective semiconductor materials and devices. The research discussed in this report aims to further the development of these new electronics by improving implementations of vertical device structures, which offer theoretically better performance compared to lateral structures. Specifically, it reviews the background and development of a new and easy-to-use program for data processing and analysis from experiments run on vertical gallium nitride power devices. Current vertical structures fall short in critical performance metrics, such as On-Resistance and Breakdown Voltage, due to poor management of the device’s electric field. Junction termination extensions, or JTEs, are a field management technique that increases a device’s resilience to expected failure modes by controlling its surface electric fields. Each JTE design requires significant experimental validation, consisting of hundreds of tested devices, each outputting an enormous set of data points. The new software includes multiple methods of filtering large sets of device testing data to identify and remove flawed devices, automate device analyses, and provide statistical breakdowns for four metrics used to define the effectiveness of the JTE and the current carrying capacity of the device. These results can then be related back to fabrication techniques and device design, and in the future, be combined with processing simulations to further improve our understanding of the JTE mechanisms.
Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR.
Abstract not provided.
Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.
Abstract not provided.
Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing
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Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
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Probing Radiation Effects in Gate-All-Around MOSFETs using Focused Particle Beams
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TCAD-Optimization Coupling Enabled TID Modeling and Calibration of Commercial SiC Power MOSFET
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Site-Specific Sectioning and SEM Imaging of MOSFET Active Regions for Device Failure Analysis
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Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs.
Abstract not provided.
3.3-kV SiC MOSFET Performance and Channel-Length Related Short-Circuit Capability.
Abstract not provided.
Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs.
Abstract not provided.
Total Ionizing Dose Effect Study on Radiation-Hard Power MOSFET Device.
Abstract not provided.