SEARCH · Engineering Papers

Results for “MOSFETs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

All sources NASA NTRS DOE OSTI

NASA NTRS2010

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗

NASA NTRS2024

Single Event Effects Test Report IXYS IXTA96P085T P-Channel -85V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the IXTA96P085T P-Channel -85V MOSFET from IXYS. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkeley Accelerator Space Effects (BASE) Facility at the Lawrence Berkeley National Laboratory (LBNL). Gate and drain currents were measured during irradiation and a basic set of electrical characterizations was performed following each fluence exposure to assess heavy ion induced damage. The test date was April 10, 2024. This characterization is application specific.

MOSFET↗

NASA NTRS2024

Single Event Effects Test Report Vishay Siliconix Si7113DN P-Channel 100V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the Si7113DN P-Channel 100V MOSFET from Vishay Siliconix. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkely Accelerator Space Effects (BASE) Facility at the Lawrence Berkely National Laboratory (LBNL).

MOSFET↗

NASA NTRSDate not supplied

Design and Development of a Fluid Immersion Cooled, SiC MOSFET, 37.5 kW, Bi-Directional Motor Converter

NASA's SUb-sonic Single Aft eNgine (SUSAN) aircraft is a concept aircraft whose architecture is that of a subsonic regional jet transport aircraft. SUSAN contains a single turbofan engine coupled to an electrified aircraft propulsion (EAP) system. To provide a path towards this goal, a 25% scale version of the SUSAN aircraft is being researched. A main component of the 25% power train is the Motor And Generator Intelligent Converter (MAGIC). This paper presents the design, development, and initial test results from MAGIC, a 37.5 kW, fluid immersion cooled, silicon carbide (SiC) MOSFET-based, bi-directional converter and controller.

PAO↗

NASA NTRSDate not supplied

Design and Development of a Fluid Immersion Cooled, SiC MOSFET, 37.5 kW, Bi-Directional Motor Converter

Immersion↗

NASA NTRS1966

MOSFET analog memory circuit achieves long duration signal storage

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Source record↗

NASA NTRS1966