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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A Divergent Clade KAI2 Protein in the Root Parasitic Plant Orobanche minor Is a Highly Sensitive Strigolactone Receptor and Is Involved in the Perception of Sesquiterpene Lactones

Abstract Strigolactones (SLs) were initially discovered as germination inducers for root parasitic plants. In 2015, three groups independently reported the characterization of the SL receptor in the root parasitic plant Striga hermonthica, which causes significant damage to crop production, particularly in sub-Saharan Africa. The characterized receptors belong to HYPOSENSITIVE TO LIGHT/KARRIKIN INSENSITIVE2 (HTL/KAI2), which is a member of the α/β-hydrolase protein superfamily. In non-parasitic plants, HTL/KAI2 perceives the smoke-derived germination inducer karrikin and a yet-unidentified endogenous ligand. However, root parasitic plants evolved a specific clade of HTL/KAI2 that has diverged from the KAI2 clade of non-parasitic plants. The S. hermonthica SL receptors are included in this specific clade, which is called KAI2 divergent (KAI2d). Orobanche minor is an obligate root holoparasitic plant that grows completely dependent on the host for water and nutrients because of a lack of photosynthetic ability. Previous phylogenetic analysis of KAI2 proteins in O. minor has demonstrated the presence of at least five KAI2d clade genes. Here, we report that KAI2d3 and KAI2d4 in O. minor have the ability to act as the SL receptors. They directly interact with SLs in vitro, and when expressed in Arabidopsis, they rescue thermo-inhibited germination in response to the synthetic SL analog GR24. In particular, KAI2d3 showed high sensitivity to GR24 when expressed in Arabidopsis, suggesting that this receptor enables highly sensitive SL recognition in O. minor. Furthermore, we provide evidence that these KAI2d receptors are involved in the perception of sesquiterpene lactones, non-strigolactone-type germination inducers.

Cell Biology↗
DOE OSTI2016

In-situ crystal structure determination of seifertite SiO 2 at 129 GPa: Studying a minor phase near Earth’s core–mantle boundary

Seifertite SiO₂ likely exists as a minor phase near the core–mantle boundary. By simulating the pressure and temperature conditions near the core–mantle boundary, seifertite was synthesized as a minor phase in a coarse-grained, polycrystalline sample coexisting with the (Mg,Fe)SiO₃ post-perovskite (pPv) phase at 129 GPa and 2500 K. Here we report the first in situ single-crystal structure determination and refinement of seifertite at high pressure and after a temperature quench from laser heating. We improved the data coverage of a minor phase from a diamond-anvil cell (DAC) by merging single-crystal data of seifertite from six selected grains that had different orientations. Observed systematic absences of reflections from the six individual grains allowed only one space group: Pbcn . The refined results of seifertite are in good agreement with the predictions from previous first-principles calculations at high pressure. This approach provides a method for structure determination of a minor phase in a mineral assemblage synthesized under P-T conditions representative of the deep Earth.

58 GEOSCIENCES↗
NASA NTRS1974

Study of ephemeris accuracy of the minor planets

The current state of minor planet ephemerides was assessed, and the means for providing and updating these emphemerides for use by both the mission planner and the astronomer were developed. A system of obtaining data for all the numbered minor planets was planned, and computer programs for its initial mechanization were developed. The computer based system furnishes the osculating elements for all of the numbered minor planets at an adopted date of October 10, 1972, and at every 400 day interval over the years of interest. It also furnishes the perturbations in the rectangular coordinates relative to the osculating elements at every 4 day interval. Another computer program was designed and developed to integrate the perturbed motion of a group of 50 minor planets simultaneously. Sampled data resulting from the operation of the computer based systems are presented.

Brooks, D. R.↗
NASA NTRS1982

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

Vonroos, O. H.↗
NASA NTRS1992

Minor satellites and the Gaspra encounter

Observational evidence, especially from occultations and radar, indicate that satellites of minor planets are numerous and commonplace. This leads to the prediction that the Galileo spacecraft will find many such 'minor satellites' at the upcoming close encounter with minor planet 951 Gaspra. If such objects are found, this argues strongly against the current theory of minor planet origin from the primeval solar nebula.

Vanflandern, Thomas C.↗
NASA NTRS1995

Research project for increasing pool of minority engineers

The Tennessee State University (TSU) Research Project for Increasing the Pool of Minority Engineers is designed to develop engineers who have academic and research experiences in technical areas of interest to NASA. These engineers will also have some degree of familiarity with NASA Lewis Research Center as a result of interaction with Lewis engineers, field trips and internships at Lewis. The Research Project has four components, which are: (1) Minority Introduction to Engineering (MITE), a high school precollege program, (2) engineering and technology previews, (3) the NASA LeRC Scholars program which includes scholarships and summer internships, and (4) undergraduate research experiences on NASA sponsored research. MITE is a two-week summer engineering camp designed to introduce minority high school students to engineering by exposing them to: (1) engineering role models (engineering students and NASA engineer), (2) field trips to engineering firms, (3) in addition to introducing youth to the language of the engineer (i.e., science, mathematics, technical writing, computers, and the engineering laboratory). Three MITE camps are held on the campus of TSU with an average of 40 participants. MITE has grown from 25 participants at its inception in 1990 to 118 participants in 1994 with participants from 17 states, including the District of Columbia, and 51 percent of the participants were female. Over the four-year period, 77 percent of the seniors who participated in MITE have gone to college, while 53 percent of those seniors in college are majoring in science, engineering or mathematics (SEM). This first Engineering and Technology Previews held in 1993 brought 23 youths from Cleveland, Ohio to TSU for a two-day preview of engineering and college life. Two previews are scheduled for 1994-1995. The NASA LeRC Scholars program provides scholarships and summer internships for minority engineering students majoring in electrical or mechanical engineering. Presently six (6) engineering students are in the Scholars program. The average GPA for the scholars is 3.239. Each scholar must maintain a minimum GPA of 3.000/4.000. NASA LeRC Fred Higgs has been awarded a GEM Fellowship. In addition, he will be presenting a paper entitled 'Design of Helical Spring Using Probabilistic Design Methodology' at the Middle Tennessee Section ASME Student Design Presentations in Nashville on March 23rd and at the National Conference on Undergraduate Research to be held at Union College, Schenectady, New York on April 20-22, 1995. Each of the scholars is working on one of the three NASA sponsored research projects in the college.

Rogers, Decatur B.↗
NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗
NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗
NASA NTRS2003

Research Project for Increasing the Pool of Minority Engineers

The NASA Glenn Research Center (GRC) funded the 2001-2002 Tennessee State University (TSU) Research Project for increasing the pool of minority engineers. The NASA GRC/TSU Research Project is designed to develop a cadre of SMET professionals who have academic and research expertise in technical areas of interest to NASA, in addition to having some familiarity with the mission of the NASA Glenn Research Center. The goal of increasing minority participation in SMET disciplines was accomplished by: (1) introducing and exposing 96 minority youth to Science, Math, Engineering, and Technology (SMET) careers and to the required high school preparation necessary to make high school graduation, college attendance and engineering careers a reality through the campus based pre-college SMET program: Minority Introduction to Engineering (MITE); (2) by providing financial support through scholarships for four (4) TSU engineering students to NASA; (3) familiarization with the SMET profession and with NASA through summer internships at NASA GRC for two TSU NASA Glenn Research Scholars; and experiences through research internships at NASA GRC.

Gott, Susan F.↗
NASA NTRS2007

Minor Elements in Nakhlite Pyroxenes: Does Cr Record Changes in REDOX Conditions during Crystallization?

Nakhlites are olivine-bearing clinopyroxene cumulates. Based on petrographic characteristics, they may be divided into groups that cooled at different rates and may have been formed at different depths in a single flow. The order of cooling rate from slowest to fastest is NWA998<Lafayette < Governador Valadares approx. Nakhla < Yamato000593 < NWA817 approx. MIL03346. Nakhlite cumulus pyroxene grains consist of large cores that are nearly homogeneous in major element composition surrounded by thin rims that are zoned to Fe-rich compositions. Detailed study of these pyroxenes is important because they retain a record of the crystallization history of the nakhlite magma. Moreover, because the composition of the nakhlite parent melt cannot be directly determined, inversion of the major and minor element composition of the cumulate pyroxene cores can be used to estimate the composition of that melt. Moreover, minor and trace element zoning of pyroxenes can provide information about the oxidation conditions under which these samples crystallized. Thus it is important to understand the major and minor element zoning in the cumulus pyroxenes. While major elements are nearly homogeneous, minor elements exhibit distinctive zoning patterns that vary from one nakhlite to another. This abstract reports unusual Cr zoning patterns in pyroxenes from MIL03346 (MIL) and contrast these with pyroxenes from Y593 and Nakhla.

McKay, G.↗
DOE OSTI2016

Apparatus and methods of measuring minority carrier lifetime using a liquid probe

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

36 MATERIALS SCIENCE↗
DOE OSTI2025

What Is the Limit of Quantification for the Minor Phase in Time-of-Flight Neutron Diffraction? A Case Study on Fe and Ni Powder Mixtures at VULCAN

A phase present in small quantities within materials may not simply serve as a secondary component; it can play a crucial role in determining the integrity, properties, and performance of the material. These minor but important phases usually draw attention in material design and processing for fundamental understanding as well as material quality control. Accurately quantifying a minor phase amid a majority phase, especially at extremely low fractions, remains a challenging task. Time-of-flight neutron diffraction, coupled with advanced pattern analysis techniques like Rietveld refinement, is a powerful tool for crystal structure identification and phase quantification. The deep penetrating capability of neutrons enables the detection and quantification of trace phases within materials. In this study, the quantification limits of time-of-flight neutron diffraction were explored using the VULCAN diffractometer at the Spallation Neutron Source, using Fe–Ni powder mixtures as a sample system. By comparing the refinement results to the known weighed values, it was determined that the reliable quantification of a minor Ni phase is achievable down to about 0.1 wt% while a Ni fraction as low as 0.02 wt% is difficult to trace. Effective control of the refinement parameters, especially the profile function parameters, are found to significantly influence the convergence of fittings and the accuracy of phase quantification.

Rietveld refinement↗
DOE OSTI2016

Characterization of Grain Boundaries and Associated Minor Phases in Disk Alloy ME3 Exposed at 815 °C

The objective of this work was to address the effect of 815 °C exposures on the chemistry of interior grain boundaries and associated minor phases from the fatigued volume of tested notched low cycle fatigue (NLCF) specimens of an advanced powder metallurgy superalloy ME3, which is used in turbine disk applications. Prior to NLCF testing at 704 °C in air, selected ME3 specimens were pre-exposed at 815 °C for exposures times up to 2,020 h to capture projected service conditions for the turbine disk rim. Structure, compositions and size distributions of minor phases, including MC carbides, M23C6 carbides, M3B2 borides and sigma, were identified. Minor phase and grain boundary chemistry for various conditions were evaluated with atom probe tomography and high resolution x-ray energy-dispersive spectroscopy.

Sudbrack, Chantal K.↗
DOE OSTI2023

Radiation Damage and Mitigation by Minority Carrier Injection in InAsSb/AlAsSb Heterojunction Barrier Mid-Wave Infrared Detector

Here, the effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb pBn mid-wave infrared (MWIR) detectors with an engineered majority-carrier barrier. Room-temperature gamma irradiation had an insignificant effect on 77 K photo-response. Gamma irradiation at 77 K detector temperature, however, decreased in situ photo-response by 19% after a cumulative dose of ~ 500 krad(Si). Subsequent forward bias minority carrier injection had no effect on photo-response. The 77 K detectors irradiated with 30 MeV protons up to 2 Mrad(Si) had photo-response degraded by up to 70%, but here forward bias minority carrier (hole) injection caused up to 12% recovery that persisted more than 30 min. These results suggest a mitigation strategy for maintaining the photo-response of similar detectors in radiation environments that cause displacement damage defects.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measurement of minority-carrier diffusion lengths using wedge-shaped semiconductor photoelectrodes

Measurement of the photocurrent as a function of the thickness of a light absorber has been shown herein both theoretically and experimentally to provide a method for determination of the minority-carrier diffusion length of a sample. To perform the measurement, an illuminated spot of photons with an energy well above the band gap of the material was scanned along the thickness gradient of a wedge-shaped, rear-illuminated semiconducting light absorber. Photogenerated majority carriers were collected through a back-side transparent ohmic contact, and a front-side liquid or Schottky junction collected the photogenerated minority carriers. Calculations showed that the diffusion length could be evaluated from the exponential variation in photocurrent as a function of the thickness of the sample. Good agreement was observed between experiment and theory for a solid-state silicon Schottky junction measured using this method. As an example for the application of the technique to semiconductor/liquid-junction photoelectrodes, the minority-carrier diffusion length was determined for graded thickness, sputtered tungsten trioxide and polished bismuth vanadate films under back-illumination in contact with an aqueous electrolyte. Furthermore, this wedge technique does not require knowledge of the spectral absorption coefficient, doping, or surface recombination velocity of the sample.

42 ENGINEERING↗
DOE OSTI2014

Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier concentrations >5 × 10{sup 14} cm{sup −3}, and Shockley-Read-Hall recombination starts to dominate the minority carrier lifetime for carrier concentrations <5 × 10{sup 14} cm{sup −3}. An observed increase of the minority carrier lifetime with increasing superlattice thickness was attributed to photon recycling, and good agreement between measured and theoretical values of the photon recycling factor was obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.

Petluru, Priyanka (ORCID:0000000257154284)↗