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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1967

Microelectronics on ATS

Fabrication, packaging, and testing of microelectronic equipment for Applications Technology Satellite /ATS/ scientific experimental package

ELECTRONIC PACKAGING↗
NASA NTRS1967

Microelectronic packaging

Hybrid assembly processes for packaging of thin film and semiconductor microelectronic devices

THIN FILM↗
NASA NTRS1996

The New Millenium Program Microelectronics Systems Advanced Technology Development

Describes the New Millenium Program, including the scope of the Microelectronics Systems IPDT as well as its current membership. Also summarizes the results of the IPDT technology roadmapping process. They describe the technologies selected as well as the avionics architecture chosen for validation of the first NMP spacecraft, to be launched inJauary 1998.

new↗
NASA NTRS2023

NASA Engineering and Safety Center Technical Bulletin No. 23-07: Best Practices for Fabrication of Microelectronic Devices

Material degradation during the fabrication of microelectronic devices has plagued the space industry for many years owing to the layering of many dissimilar metals to create these devices. Often, commonly used materials and systems are overlooked as potential sources of material degradation. This technical bulletin highlights extensive research to isolate probable causes of this degradation.

Best Practices↗
DOE OSTI2022

Building Blocks for Secure and Prosperous Defense Critical Supply Chains: A Case Study from Microelectronics

Securing defense-critical supply chains, built on resilient and sustainable microelectronics fabrication and deployment, is a national imperative and one that requires an investment in basic and applied research, development, and deployment into industries in (and out of) the Defense Industrial Base (DIB). Critical next steps include the development of pilots for revolutionary concepts in a new formal verification model and the Cyber-Physical Passport (CPP) concept for chain of custody. Critical infrastructure leadership should take action with a sense of urgency. Working in conjunction with the Under Secretary for Acquisition and Sustainment, the Assistant Secretary of Defense for Research and Engineering should establish pilot programs with the Defense Advanced Research Projects Agency and the service labs to build and test both concepts in legacy and new system development.. Additionally, the Pentagon may be aware that an existing Manufacturing Innovation Institute is piloting, with the semiconductor industry, cyber innovations to provide verifiable security properties and guarantees of physical functions to build a more cyber secure, resilient and efficient micro-electronics supply chain.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2018

The Application of MCNP6.2 Unstructured Mesh Geometry Capabilities to the Study of Heavy Ion Single Event Effect on Microelectronic Devices and the Reactor Physics Analysis - 25691

Unstructured meshes allow irregular or complex geometries to be modeled precisely in Monte Carlo radiation transport codes. Through this capability, it is possible to share an unstructured mesh model between multiple codes that use unstructured mesh geometry and thus improving coupled multi-physics simulations. In this work, unstructured meshes are used to model energy deposition from heavy ion strikes for single event effects on microelectronic devices as well as neutron flux mapping of nuclear reactor configurations. In each case, MCNP6.2's unstructured mesh functionality and applicability to the problem is demonstrated and analyzed. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Mechanical exfoliation of 2D materials has triggered an explosive interest in lowdimensional material research. We extend this idea to 1D van derWaals materials. Three 1D semiconductors (SbSeI, SbSI and SbSBr) with high stability and novel electronic properties are discovered using first principles calculations. Both the dynamical and the thermal stability of these 1D materials are examined. We demonstrate that their nanowire thinner than 7 Å can be easily obtained by mechanical exfoliation, hydrothermal method or sonochemical method. The bulk-to-1D transition results in dramatic changes in band gap, effective mass and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. These highly desirable properties render SbSeI, SbSI and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

36 MATERIALS SCIENCE↗