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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Unraveling the Nature of Lasing Emission from Hybrid Silicon Nitride and Colloidal Nanocrystal Photonic Crystals with Low Refractive Index Contrast

Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.

BIC Lasing↗
DOE OSTI2020

Materials Data on LaSe by Materials Project

LaSe is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. La2+ is bonded to six equivalent Se2- atoms to form a mixture of edge and corner-sharing LaSe6 octahedra. The corner-sharing octahedral tilt angles are 0°. All La–Se bond lengths are 3.05 Å. Se2- is bonded to six equivalent La2+ atoms to form a mixture of edge and corner-sharing SeLa6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on LaSe by Materials Project

LaSe is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. La2+ is bonded in a body-centered cubic geometry to eight equivalent Se2- atoms. All La–Se bond lengths are 3.22 Å. Se2- is bonded in a body-centered cubic geometry to eight equivalent La2+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on LaSeS by Materials Project

LaSeS crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. La3+ is bonded in a 9-coordinate geometry to four equivalent Se1- and five equivalent S2- atoms. There are a spread of La–Se bond distances ranging from 3.09–3.27 Å. There are a spread of La–S bond distances ranging from 2.92–3.18 Å. Se1- is bonded in a 12-coordinate geometry to four equivalent La3+ and one Se1- atom. The Se–Se bond length is 2.52 Å. S2- is bonded to five equivalent La3+ atoms to form a mixture of distorted edge and corner-sharing SLa5 trigonal bipyramids.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanoscale Free-Electron Lasing (Final Technical Report)

Optical control of electron dynamics and energy structure can be leveraged for tailoring classical and quantum light sources. Previous work was primarily limited to Transmission Electron Microscopes (TEMs). Our work under this program sought to enable full time and energy control of electrons in SEMs for exploring the physics of attosecond electron dynamics and light generation at the nanoscale. The motivation behind this work was to understand these fundamental processes important to free-electron lasing at the nanoscale using sub-relativistic electrons.

42 ENGINEERING↗
DOE OSTI2023

Optically Excited Lasing in a Cavity‐Based, High‐Current‐Density Quantum Dot Electroluminescent Device

Abstract Laser diodes based on solution‐processable materials can benefit numerous technologies including integrated electronics and photonics, telecommunications, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The progress towards a QD laser diode has been hampered by rapid nonradiative Auger decay of optical‐gain‐active multicarrier states, fast device degradation at high current densities required for laser action, and unfavorable competition between optical gain and optical losses in a multicomponent device stack. Here we resolve some of these challenges and demonstrate optically excited lasing from fully functional high‐current density electroluminescent (EL) devices with an integrated optical resonator. This advance has become possible due to excellent optical gain properties of continuously graded QDs and a refined device architecture, which allows for highly efficient light amplification in a thin, EL‐active QD layer.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Identification of Brillouin Zones by In-Plane Lasing from Light-Cone Surface Lattice Resonances

Periodic optical structures can control the flow of light, which has facilitated applications in optical fibers, laser cavities, and biochemical sensors. The first Brillouin zone (BZ) in reciprocal space can describe all the electromagnetic fields localized inside a photonic lattice. However, photonic lattices also exhibit radiative losses from light scattering, but the radiated fields are not captured by the first BZ. In a two-dimensional lattice, the in-plane wavevectors of photonic modes are limited by the so-called light cone, which depicts free-photon dispersion relations in the surrounding medium. Here we show that projection of the light cone on extended BZs provides a geometric method to observe radiated electromagnetic fields of photonic lattice modes. We developed a coupled dipole radiation theory to reveal how lattice geometry and dipole orientation affect the angular distributions of the radiated fields. Using dye molecules as local dipole emitters to excite and probe the optical modes, we experimentally identified high-order BZ edges through directional, in-plane lasing emission.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Quantum Shells Boost the Optical Gain of Lasing Media

Auger decay of multiple excitons represents one of the main obstacles to photonic applications of semiconductor quantum dots (QDs). These non-radiative processes are particularly detrimental to the performance of QD-based electroluminescent and lasing devices. Here, we demonstrate that by using semiconductor quantum shells with an “inverted” QD geometry, it is possible to inhibit Auger recombination, allowing extraordinary improvements to their multi-exciton characteristics. Additionally, we show that quantum shells result in ultralong biexciton lifetimes (>10 ns), and an associated biexciton quantum yield of up to 81%. Furthermore, the energy-dispersive architecture of quantum shells leads to exciton-exciton repulsion, which splits the single-exciton and bi-exciton optical transitions. In this regime, quantum shells produce the longest optical gain lifetime reported for colloidal QDs to date (> 6 ns) over a broad amplification bandwidth. Therefore, the employment of quantum shells in optically- or electrically-pumped gain media can lead to a substantial improvement in device performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Photophysics and Carrier Dynamics of Lasing in Quasi-2D Lead Halide Perovskites

Quasi-2D perovskites have recently been extensively studied due to their narrow-bandwidth-tunable emission, solution processability, and applicability as optical gain media. Quasi-2D perovskites are composed of inorganic perovskite crystal layers encapsulated with a bulky organic ligand such as phenylethylammonium, endowing the perovskite with a quantum-well structure and improved stability. In this article, we explore the photophysics of a quasi-2D metal halide perovskite as a promising light-harvesting and emitting medium. We find it exhibits high optical absorption (~10 5 cm -1 ) and an optically pumped amplified spontaneous emission threshold at 623 μJ/cm 2 . We study charge transfer processes in the complex mixed quantum wells of these perovskites through transient absorption and time-resolved photoluminescence measurements and develop a phenomenological model that incorporates optical gain for lasing. Further, while both free carriers and excitons are observed, we show surprisingly that photoluminescence is dominated by excitons despite the relatively small binding energy (~16 meV) of the low-energy band edge. Additionally, we extract the rates of exciton relaxation pathways, revealing a relatively large radiative term of 4.6 x 10 8 s -1 as well as an exciton-exciton annihilation term of 3.6 x 10 -13 cm 3 s -1 that is 3 orders of magnitude smaller than in similar quasi-2D perovskites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Cage Balancing Enhances Optoelectronic and Lasing Performance in Stable Quasi-2D Tin Iodide Perovskites

Two-dimensional (2D) tin halide perovskites are highly tunable and low-toxicity semiconductors, promising for next-generation optoelectronics. However, achieving air stability and excellent photophysical properties simultaneously necessitates deliberate structure tuning using organic spacer cations and A-site cations. Here, we report a series of new quasi-2D Ruddlesden–Popper tin halide perovskites using a fluorinated aromatic spacer cation, 4-fluorophenethylammonium (4FPEA), and systematically investigate the impacts of layer thickness, spacer cation, and A-site cation on the crystal structures and optical properties of (4FPEA) 2 (A) n−1 S n I 3n+1 . These 4FPEA-based 2D tin perovskites, further tuned by the A-cations, exhibit uniquely undistorted 180° out-of-plane Sn–I–Sn bond angles and low octahedral distortions compared to other quasi-2D perovskites and demonstrate prolonged air stability, excellent photophysics, and amplified spontaneous emission and lasing in exfoliated microflakes. A comprehensive survey of reported n = 2 lead and tin iodide perovskites reveals that all structures can be classified into three types (tilted, balanced, and buckled) based on the structural distortion parameters of their perovskite cages. Notably, (4FPEA) 2 (A)Sn 2 I 7 are among the handful of “balanced” n = 2 perovskites with minimal distortion and excellent optoelectronic performance. Furthermore, the structural insights and cage-balancing approach revealed herein motivate the deliberate design of quasi-2D perovskites through the synergy of the spacer and cage cations, further paving the way for high-performance optoelectronic applications of stable tin halide perovskites.

Cations↗
DOE OSTI2023

Large two-photon cross sections and low-threshold multiphoton lasing of CdS/CdSe/CdS quantum shells

Colloidal quantum shells are spherical semiconductor quantum wells, which have shown strong promise as optical materials, particularly in classes of experiments requiring multiple excitons. The two-photon properties of CdS/CdSe/CdS quantum shell samples are studied here to demonstrate large non-linear absorption cross-sections while retaining advantageous multiexciton physics conferred by the geometrical structure. The quantum shells have large two-phonon cross sections (0.4–7.9 × 10 6 GM), which highlights their potential use in upconversion imaging in which large per particle two-photon absorption is critical. Time-resolved measurements confirmed that the quantum shells have long biexciton lifetime (>10 ns in the largest core samples reported here) and large gain bandwidth (>300 meV). The combination of these attributes with large two-photon cross sections makes the CdS/CdSe/CdS quantum shells excellent gain media for two-photon excitation. With a broad gain bandwidth and long gain lifetime, quantum shell solids support multimodal amplified spontaneous emission from excitons, biexcitons, and higher excited states. In conclusion, thresholds for amplified spontaneous emission and lasing, which are as low as 1 mJ cm −2 , are comparable to, or lower than, the thresholds reported for other colloidal materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0

This paper describes an investigation of the linewidth enhancement factor α H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α H . In particular, the feasibility of lasing at the gain peak with α H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

42 ENGINEERING↗
DOE OSTI2022

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Modelling of the laser amplification process with allowance for the effect of the temperature distribution in an Yb : YAG gain element on the thermophysical and lasing characteristics of the medium

A time-dependent three-dimensional model for the laser amplification process has been constructed with allowance for the effect of the temperature distribution on the thermophysical and lasing characteristics of gain media. We have performed numerical modelling of the laser amplification process in the gain elements of a two-stage subjoule-level cryogenic laser amplifier operating at a pulse repetition rate of up to 1 kHz. It has been shown that taking into account the temperature distribution is of critical importance in calculation of cryogenically cooled laser amplifiers pumped with high-power diodes. We have found optimal diode pump parameters at which the maximum achievable pulse energy at the amplifier output can reach 300 and 570 mJ at pulse repetition rates of 1000 and 500 Hz, respectively. (extreme light fields and their interaction with matter)

42 ENGINEERING↗
DOE OSTI2021

Lasing in 15 atm CO 2 cell optically pumped by a Fe:ZnSe laser

10 µm lasing is studied in a compact CO 2 -He cell pressurized up to 15 atm when optically pumped by a ∼50 mJ Fe:ZnSe laser tunable around 4.3 µm. The optimal pump wavelength and partial pressure of CO 2 for generating 10 µm pulses are found to be ∼4.4 µm and 0.75 atm, respectively. Without cavity optimization, the optical-to-optical conversion efficiency reached ∼10% at a total pressure of 7 atm. The gain lifetime is measured to be ∼1 µs at pressures above 10 atm, indicating the feasibility of using high-pressure optically pumped CO 2 for the efficient amplification of picosecond 10 µm pulses.

Tovey, Dana↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high power quasi-steady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s Ar II transitions are established by collisional-radiative recombination of the Ar III ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764 and 4727 A, is observed spectro-photographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗
NASA NTRS1977

Recombination lasing in a magnetoplasmadynamic arcjet

The plasmadynamic recombination laser concept is verified experimentally in a high-power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature, electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s ArII transitions are established by collisional-radiative recombination of the ArIII ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764, and 4727 A, is observed spectrophotographically and photoelectrically over the entire 1-msec discharge.

Campbell, E. M.↗