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At least 73 records · Page 4

XPS analysis of the effect of fillers on PTFE transfer film development in sliding contacts

The development of transfer films atop steel counterfaces in contact with unfilled and bronze-filled PTFE has been studied using X-ray photoelectron spectroscopy. The sliding apparatus was contained within the vacuum of the analytical system, so the effects of the native oxide, hydrocarbon, and adsorbed gaseous surface layers of the steel upon the PTFE transfer behavior could be studied in situ. For both the filled and the unfilled PTFE, cleaner surfaces promoted greater amounts of transfer. Metal fluorides, which formed at the transfer film/counterface interface, were found solely in cases where the native oxide had been removed to expose the metallic surface prior to sliding. These fluorides also were found at clean metal/PTFE interfaces formed in the absence of frictional contact. A fraction of these fluorides resulted from irradiation damage inherent in XPS analysis. PTFE transfer films were found to build up with repeated sliding passes, by a process in which strands of transfer filled in the remaining counterface area. Under these reported test conditions, the transfer process is not expected to continue atop previously deposited transfer films. The bronze-filled composite generated greater amounts of transfer than the unfilled PTFE. The results are discussed relative to the observed increase in wear resistance imparted to PTFE by a broad range of inorganic fillers.

Blanchet, T. A.

Synthesis, Characterization, and Testing of High-Lithium-Density Composite Breeders

Solid tritium breeder materials must first and foremost have sufficiently high concentrations of lithium to enable a plant-scale tritium breeding ratio greater than 1:1. However, in addition to lithium content, such breeder materials must also meet other performance metrics including high tritium release rates, thermal conductivities, and irradiation damage tolerance. Perhaps most importantly, tritium breeders must maintain their mechanical integrity during reactor operation so as to avoid degradation which can jeopardize the functionality of the tritium breeder blanket module, which in most designs takes the form of a pebble bed geometry. Unfortunately, the mechanical robustness of most lithium-bearing ceramics under investigation for fusion applications is often inversely related to the lithium atom density. For example, a material such as lithium oxide (Li2O), which has one of the highest lithium atom densities, has a much lower mechanical splitting strength than lithium metatitanate (Li2TiO3), though Li2TiO3 has less than half the lithium atom density of Li2O. This work seeks to provide an alternative to monolithic ceramic tritium breeders, in the form of metal-reinforced composite tritium breeders. Specifically, composite tritium breeders have been synthesized combining Li2O with various ferrous metal reinforcements via electric field assisted sintering (EFAS), also known as spark plasma sintering (SPS). As the metal reinforcement content is increased, metallic networks are observed, via electron microscopy and X-ray computed tomography, to form throughout the composite material. Through destructive mechanical testing, even dilute metal reinforcement loading enables drastic mechanical strength improvements over pure Li2O while higher loadings give rise to quasi-ductile behavior and higher ultimate strengths than Li2TiO3 – while still maintaining a higher density of lithium atoms than Li2TiO3 and many other breeder candidates. In addition to microstructural characterization and mechanical testing, thermal property measurements and hydrogen permeability testing are underway to further assess the suitability of such composites for fusion reactor applications.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Walker, G. H.

Radiation damage in proton irradiated indium phosphide solar cells

Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

Weinberg, I.

MX precipitate behavior in an irradiated advanced Fe-9Cr steel: Helium effects on phase stability

As part of an ongoing series aimed at optimizing Fe-9Cr reduced activation ferritic/martensitic (RAFM) alloys for fusion energy systems, this study explores MX precipitate behavior under dual-ion irradiations, specifically examining correlations between helium transmutation and irradiation-induced damage. Utilizing single and dual-beam ion irradiation, the research explores the combined effects of helium (10–25 appm He/dpa), temperature (400–600 °C), and damage levels (15–100 dpa) on the microstructural evolution of CNA9 steel, a variant of Castable Nanostructured Alloys (CNAs). The study demonstrates that helium co-implantation hinders radiation-enhanced coarsening of MX-TiC precipitates at 500 and 600 °C, maintaining MX-TiC precipitate stability at moderate damage levels (15 dpa) but failing to prevent complete precipitate dissolution at higher damage levels (≥50 dpa) when irradiated at 500 °C. Here, a generalized precipitate stability model suggests that helium-induced suppression of diffusion alters the balance between recoil resolution and back diffusion for MX-TiC precipitates, enhancing the current understanding of precipitate behavior under damage and transmutation simulated dual-ion irradiation conditions.

Characterization

Radiation and the Immune System

Radiation has profound effects on the immune system. This makes it particularly important to study in order to protect astronauts venturing into deep space and cancer patients considering radiotherapy treatments. Beyond the Earth's magentic field lies galactic cosmic radiation, which contains heavy ion based rays. Immune alterations in response to radiation depends on factors such as the type and amount of radiation, and potentially even the genes of the individual being exposed. In order to study the effects of cosmic radiation on the immune system, we are exposing primary human immune cells to various types and amounts of radiation. To measure sensitivity to radiation, we are quantifying the DNA damage within the cells before irradiation, 4 hours after irradiation, and 24 hours after irradiation. DNA damage is visualized by fluorescently staining for known DNA repair proteins, which get recruited to the site of damage within a cell. These results will be analyzed to search for correlations between immune cell responses and the type of radiation, amount of radiation, or any genetic markers present in the human blood donors. We will also be attempting to determine which specific immune cells are most suspectible to radiation damage. These correlations and discoveries will contribute to making long duration human deep space exploration a possibility, and can even be used to design more personalized and effective radiation treatments for cancer patients.

Malkani, Sherina S.

Temperature dependence of damage coefficient in electron irradiated solar cells

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Faith, T. J.

AGR-5/6/7 Irradiation Experiment Fission Product Mass Balance

This report presents the fission product mass balance for the AGR-5/6/7 TRISO fuel irradiation experiment. The fission product inventories deposited on capsule components outside of the fuel (e.g., stainless-steel shells, graphite holders, Grafoil disks, and associated hardware) were quantified as part of the post-irradiation examination (PIE) to assess the performance of this fuel. Comparisons were made between these inventories and depletion calculations, non-destructive measurements of fuel fission product inventories in the intact fuel compacts, prior AGR experiments, and results from among each of the five distinct AGR-5/6/7 capsules. The data served as estimates of the condensable fission products released from the fuel during irradiation. Excluding Capsule 1 (which experienced accidental damage during irradiation) and Capsule 3 (which was tested at very high irradiation temperatures of >1300°C), the results indicate that the AGR-5/6/7 fuel performed comparably to fuel from earlier AGR experiments. The mass balance results were also used to estimate the number of particles with in-pile SiC failures. Subject to the assumptions made in these estimates, and excluding Capsules 1 and 3, the in-pile SiC failure rates for AGR-5/6/7 are comparable to those observed in AGR-2.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

bandwidth

Nanosecond dual-wavelength irradiation effects on laser-induced damage in hafnia coatings

Nanosecond dual-wavelength laser-induced damage was investigated at 1064 nm (1ω) and 355 nm (3ω) on ion-beam-sputtered hafnia single-layer coatings. Single-wavelength 1-on-1 tests were first conducted to establish reference onset fluences. Dual-wavelength tests combined a primary beam with variable fluence at one wavelength and a background, secondary wavelength beam with fixed fluences set to several percentages of the corresponding onset fluence. When 1ω was used as the background irradiation, the perceived damage resistance at 3ω decreased gradually. Here, in contrast, 3ω background irradiation at as little as 10% of the onset fluence led to an ≈ 50% abrupt reduction in the perceived 1ω damage resistance, followed by modest changes upon further increases in 3ω background fluences. Scanning electron microscopy and conversion ratios indicate that 3ω light is the primary driver of damage onset in the case of dual wavelength irradiation. A two-step precursor generation and activation model reproduces the 3ω behavior (1ω as background), but not the strong initial 1ω reduction (3ω as background), suggesting additional 3ω-induced precursors that saturate at low fluence.

Optics and optical instruments

In situ TEM annealing of neutron-irradiated Ti reveals a two-stage mechanism for elevated temperature radiation damage recovery

Understanding how irradiation-induced defects evolve at elevated temperatures is of critical importance to predicting materials' behavior under steady-state and accident scenarios. However, such mechanistic insight into microstructural evolution is limited by the nature of ex situ annealing and subsequent imaging. Here we show direct observation and quantification of defect recovery in neutron-irradiated Ti using in situ transmission electron microscopy (TEM) annealing experiments. In agreement with our prior work, and at temperatures below the irradiation temperature (T irr = 300 °C), dislocation loops are observed to glide. At elevated temperatures (>500 °C), dislocation lines become mobile and promote significant recovery of the microstructure. These mechanisms challenge the established electron irradiation-based model for radiation damage recovery, which originally suggests dissolution of static defect clusters, and demonstrates the importance of in situ characterization in understanding defect evolution in irradiated materials.

Hirst, Charles A. [Univ. of Michigan, Ann Arbor, M

Cell killing and chromatid damage in primary human bronchial epithelial cells irradiated with accelerated 56Fe ions

We examined cell killing and chromatid damage in primary human bronchial epithelial cells irradiated with high-energy 56Fe ions. Cells were irradiated with graded doses of 56Fe ions (1 GeV/nucleon) accelerated with the Alternating Gradient Synchrotron at Brookhaven National Laboratory. The survival curves for cells plated 1 h after irradiation (immediate plating) showed little or no shoulder. However, the survival curves for cells plated 24 h after irradiation (delayed plating) had a small initial shoulder. The RBE for 56Fe ions compared to 137Cs gamma rays was 1.99 for immediate plating and 2.73 for delayed plating at the D10. The repair ratio (delayed plating/immediate plating) was 1.67 for 137Cs gamma rays and 1.22 for 56Fe ions. The dose-response curves for initially measured and residual chromatid fragments detected by the Calyculin A-mediated premature chromosome condensation technique showed a linear response. The results indicated that the induction frequency for initially measured fragments was the same for 137Cs gamma rays and 56Fe ions. On the other hand, approximately 85% of the fragments induced by 137Cs gamma rays had rejoined after 24 h of postirradiation incubation; the corresponding amount for 56Fe ions was 37%. Furthermore, the frequency of chromatid exchanges induced by gamma rays measured 24 h after irradiation was higher than that induced by 56Fe ions. No difference in the amount of chromatid damage induced by the two types of radiations was detected when assayed 1 h after irradiation. The results suggest that high-energy 56Fe ions induce a higher frequency of complex, unrepairable damage at both the cellular and chromosomal levels than 137Cs gamma rays in the target cells for radiation-induced lung cancers.

NASA Discipline Radiation Health

Damage and coefficients and thermal annealing of irradiated silicon and GaAs solar cells

Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.

Anspaugh, B. E.