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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

Linear charge coupled device detector array for imaging light propagating in an integrated thin-film optical waveguide

Device design, fabrication, and operation of a linear charge coupled device (CCD) detector array integrated with a thin film optical waveguide and applications of this structure to integrated optical signal processing and fiber optical communications were discussed. A two phase, overlapping-gate CCD is connected in parallel by means of a series of gates to an array of photodiodes. The photodiode provides an electrode free surface region so that a highly efficient waveguide detector coupling technique can be implemented. A thermally-oxidized layer of SiO2 forms an effective substrate for the optical waveguide.

Chen, C. L.↗

Effect of charge polarization on inelastic scattering - Differential and integral cross sections for excitation of the 2/super 1/S state of helium by electron impact.

Experimental differential scattering cross sections for excitation of helium by electron impact from its ground state to its 2(super 1)S state are presented at four incident electron energies in the range from 26 to 55.5 eV for scattering angles between 10 and 70 deg and at 81.6 eV for scattering angles between 10 and 80 deg. These cross sections are normalized and compared with results predicted by the Born approximation, the polarized Born approximation, and several other first-order approximations in which direct excitation is calculated in the Born approximation and exchange scattering in various Ochkur-like approximations.

Rice, J. K.↗

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗

Application of microprocessors to spacecraft synthetic aperture radar processing

A ground-based digital synthetic aperture radar (SAR) processor capable of correlating images from raw spacecraft data at real-time rates is currently under development. The processor design requirements are particularly formidable due to (1) range migration effects resulting from planetary curvature and rotation, (2) antenna beam pointing errors, and (3) variation of the Doppler reference function with changing orbital parameters. Based upon the current effort, this paper describes a candidate real-time on-board SAR processing implementation approach that might evolve for future spacecraft applications. Key features include the use of custom large scale integration (LSI) charge-coupled device (CCD) technology to accomplish the correlation functions and microprocessor technology to effect control.

Arens, W. E.↗

LEC GaAs for integrated circuit applications

Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

Kirkpatrick, C. G.↗

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗

Pixel Paradise

PixelVision, Inc., has developed a series of integrated imaging engines capable of high-resolution image capture at dynamic speeds. This technology was used originally at Jet Propulsion Laboratory in a series of imaging engines for a NASA mission to Pluto. By producing this integrated package, Charge-Coupled Device (CCD) technology has been made accessible to a wide range of users.

Source record↗

Single chip camera device having double sampling operation

A single chip camera device is formed on a single substrate including an image acquisition portion for control portion and the timing circuit formed on the substrate. The timing circuit also controls the photoreceptors in a double sampling mode in which are reset level is first read and then after an integration time a charged level is read.

Fossum, Eric R.↗

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗

The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmic ray transverse the active regions of semiconductor devices used in integrated circuit (IC) chips, it leaves along its track a high density electron hole plasma. The subsequent decay of this plasma by drift and diffusion leads to charge collection at the electrodes large enough in most cases to engender a false reading, hence the name single-event upset (SEU). The problem of SEU's is particularly severe within the harsh environment of Jupiter's radiation belts and constitutes therefore a matter of concern for the Galileo mission. The physics of an SEU event is analyzed in some detail. Owing to the predominance of nonlinear space charge effects and the fact that positive (holes) and negative (electrons) charges must be treated on an equal footing, analytical models for the ionized-charge collection and their corresponding currents as a function of time prove to be inadequate even in the simplest case of uniformly doped, abrupt p-n junctions in a one-dimensional geometry. The necessity for full-fledged computer simulation of the pertinent equations governing the electron-hole plasma therefore becomes imperative.

Vonroos, O.↗

O(+)-O collision frequency in high-speed flows

Throughout much of the terrestrial thermosphere and ionosphere, the motions of the neutral and ionized constituents are closely coupled and relative velocities are small, of the order of 100 m/s or less. This is particularly true at midlatitudes to low latitudes where typical velocities in the neutral gas due to tidal forcing are only 20-50 m/s. However, the solar wind-magnetosphere interaction drives a large-scale convection pattern in the polar ionosphere. When the rapid adjustment of the plasma to changes in the solar wind is combined with the slower response of the more massive neutral gas, large relative velocities on the order of 1 km/s can exist for substantial lengths of time. This will be more common during periods of high geomagnetic activity, as a result of the greater number of magnetic substorms and other particle precipitation events. When a significant relative velocity is present, the calculation of interaction parameters of the two gases passing through each other, such as collision frequency, must include that velocity. These effects are usually neglected when interpreting wind and ion drift observations. We show how the collision frequency is affected by a directed velocity between any two gases interacting with a power law or exponential potential energy curved. The directed velocity increases the collision frequency at all temperatures for most ion-neutral interactions. For certain power law potentials, such as the charge quadrupole, the collision frequency is decreased. We present an analytic solution for the high-speed collision integral using the resonance charge exchange cross section.

Pesnell, William Dean↗

Nonlinear, nonlaminar-3D computation of electron motion through the output cavity of a klystron

The equations of motion used in the computation are discussed along with the space charge fields and the integration process. The following assumptions were used as a basis for the computation: (1) The beam is divided into N axisymmetric discs of equal charge and each disc into R rings of equal charge. (2) The velocity of each disc, its phase with respect to the gap voltage, and its radius at a specified position in the drift tunnel prior to the interaction gap is known from available large signal one dimensional programs. (3) The fringing rf fields are computed from exact analytical expressions derived from the wave equation assuming a known field shape between the tunnel tips at a radius a. (4) The beam is focused by an axisymmetric magnetic field. Both components of B, that is B sub z and B sub r, are taken into account. (5) Since this integration does not start at the cathode but rather further down the stream prior to entering the output cavity it is assumed that each electron moved along a laminar path from the cathode to the start of integration.

Albers, L. U.↗

Effective Forces Between Colloidal Particles

Colloidal suspensions have proven to be excellent model systems for the study of condensed matter and its phase behavior. Many of the properties of colloidal suspensions can be investigated with a systematic variation of the characteristics of the systems and, in addition, the energy, length and time scales associated with them allow for experimental probing of otherwise inaccessible regimes. The latter property also makes colloidal systems vulnerable to external influences such as gravity. Experiments performed in micro-ravity by Chaikin and Russell have been invaluable in extracting the true behavior of the systems without an external field. Weitz and Pusey intend to use mixtures of colloidal particles with additives such as polymers to induce aggregation and form weak, tenuous, highly disordered fractal structures that would be stable in the absence of gravitational forces. When dispersed in a polarizable medium, colloidal particles can ionize, emitting counterions into the solution. The standard interaction potential in these charged colloidal suspensions was first obtained by Derjaguin, Landau, Verwey and Overbeek. The DLVO potential is obtained in the mean-field linearized Poisson-Boltzmann approximation and thus has limited applicability. For more precise calculations, we have used ab initio density functional theory. In our model, colloidal particles are charged hard spheres, the counterions are described by a continuum density field and the solvent is treated as a homogeneous medium with a specified dielectric constant. We calculate the effective forces between charged colloidal particles by integrating over the solvent and counterion degrees of freedom, taking into account the direct interactions between the particles as well as particle-counterion, counterion-counterion Coulomb, counterion entropic and correlation contributions. We obtain the effective interaction potential between charged colloidal particles in different configurations. We evaluate two- and three-body forces in the bulk as well as study the influence of soft walls. We qualitatively explain the effects of the walls on the forces and demonstrate that many-body effects are negligible in our system. With adjustments in the parameters, the DLVO pair-potential can describe the results quantitatively. Besides electrostatic interactions, entropic depletion effects that arise from (hard-core) exclusion play an important role in determining the behavior of multi-component colloidal suspensions. A standard theory for depletion forces is due to Asakura and Oosawa and is based on the ideal gas approximation. To go beyond this approximation, we have studied entropic forces in molecular dynamics simulations of systems of hard spheres (the effects of the solvent have been ignored). The effective depletion forces for these systems can be found either from equilibrium distribution functions or from direct momentum transfer calculations. Our results obtained by either method show qualitative differences from the Asakura-Oosawa forces, indicating a longer range, higher value at contact and most importantly a more complicated structure, comprising of several maxima and minima. Our calculations include the determination of effective forces between two spheres, a hard sphere and a wall, and the behavior of a hard sphere near a step-edge and a corner. We also demonstrate that such entropic forces do not necessarily satisfy pairwise additivity.

Tehver, Riina↗

Installation and Characterization of Charged Particle Sources for Space Environmental Effects Testing

Charged particle sources are integral devices used by Marshall Space Flight Center s Environmental Effects Branch (EM50) in order to simulate space environments for accurate testing of materials and systems. By using these sources inside custom vacuum systems, materials can be tested to determine charging and discharging properties as well as resistance to sputter damage. This knowledge can enable scientists and engineers to choose proper materials that will not fail in harsh space environments. This paper combines the steps utilized to build a low energy electron gun (The "Skevington 3000") as well as the methods used to characterize the output of both the Skevington 3000 and a manufactured Xenon ion source. Such characterizations include beam flux, beam uniformity, and beam energy. Both sources were deemed suitable for simulating environments in future testing.

Skevington, Jennifer L.↗

An integrated development facility for the calibration of low-energy charged particle flight instrumentation

A system was developed for the calibration and development of thermal ion instrumentation. The system provides an extended beam with usable current rates, approx. 1 pA/sq cm, at beam energies as low as 1 eV, with much higher values available with increasing energy. A tandem electrostatic and variable geometry magnetic mirror configuration within the ion source optimizes the use of the ionizing electrons. The system is integrated under microcomputer control to allow automatic control and monitoring of the beam energy and composition and the mass and angle-dependent response of the instrument under test. The system is pumped by a combination of carbon vane and cryogenic sorption roughing pumps and ion and liquid helium operating pumps.

Biddle, A. P.↗

Effect of temperature and heating rate on apparent lethal concentrations of pyrolysis products

The apparent lethal concentrations for 50 percent of the test animals of the pyrolysis products from twelve polymeric materials were studied as a function of temperature and heating rate. The materials were polyethylene, nylon 6, ABS, polycarbonate, polyether sulfone, polyaryl sulfone, wool fabric, aromatic polyamide fabric, polychloroprene foam, polyvinyl fluoride film, Douglas fir, and red oak. The apparent lethal concentration values of most materials vary significantly with temperature and heating rate. The apparent lethal concentration values, based on weight of sample charged, appears to effectively integrate the thermophysical, thermochemical, and physiological responses from a known quantity of material under specified imposed conditions.

Hilado, C. J.↗

To the first Shuttle launch

The major Shuttle-related testing currently in progress includes: static testing of all major elements, full scale ground vibration testing, main propulsion system testing, software verification and validation, qualification testing of many components and subsystems, and SSME verification testing. This paper reviews the current status of the Shuttle program and gives attention to the transition to operations, near-term traffic plans, user-charge policies, and payload integration. It is concluded that the transition from individual space-research projects to a fully integrated Space Transportation System, providing low-cost routine access to space for many users, involves a complete rethinking of the role NASA and the user will play.

Yardley, J. F.↗