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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.

Chiang, P. K.↗
NASA NTRS1985

A heterodyne receiver for the submillimeter wavelength region based on cyclotron resonance in InSb at low temperatures

A heterodyne receiver has been developed for observation of interstellar atomic and molecular lines in the submillimeter wavelength region. The main detection mechanism of the device is cyclotron resonance in bulk n-InSb due to a quantized magnetic field. Measurements were carried out between 492 and 812 GHz in order to determine the sensitivity of the device for astrophysical applications. Double sideband receiver noise temperatures of 250 K at 492 GHz; 350 K at 625 GHz; and 510 K at 812 GHz were obtained. The magnetic induction for the laboratory tests was about 2.5 KG and the mixer operating temperature was about 1.6 K. It is shown that the receiver is sensitive enough to identify the narrow rotation lines of diatomic hydrides in dark-cloud regions of the interstellar medium.

Brown, E. R.↗
NASA NTRS1989

InSb DRO array characteristics

Researchers tested 58 x 62 low-doped InSb diode arrays bonded to MOSFET readouts for their performance potential in a low background space environment. Of primary concern were the quantum efficiency, dark current and read noise. The quantum efficiency (45 percent at 3.3 microns) and dark current (less than 2.4e(-)/s) were found to be adequate for the Space Infrared Telescope Facility (SIRTF) experiments, while the read noise (200 e(-) RMS) was found to be wanting. More subtle concerns, such as image quality, linearity/calibratibility and flat fielding were also investigated. In these respects the arrays appear to be well suited for the high sensitivity, photometric accuracy, and image clarity demanded by the SIRTF experiments.

Forrest, W. J.↗
NASA NTRS1991

InSb linear multiplexed FPAs for the CRAF/Cassini visible and infrared mapping spectrometer

This paper provides a review of a custom multiplexer circuit designed for use with a 256 element InSb linear array in the CRAF/Cassini VIMS instruments. The requirements, operation noise model and test results from a prototype 1 x 64 array are discussed. The infrared focal plane array (FPA) preliminary design and the impact of the new multiplexer on the instruments' predicted performance will be discussed. Emphasis will be placed on the multiplexer that was designed for the CRAF/Cassini missions. The FPA assembly combines electronic and optical components into a single hermetically sealed hybrid package. The detector configuration is that of a linear dual-multiplexed indium antimonide array with 256 elements, each 103 x 200 on 123-micron centers.

Niblack, Curtiss↗
NASA NTRS1983

Evaluation of a 32 x 32 InSb CCD for use in astronomy

We have been fortunate to receive several infrared CCD array detectors on loan from Santa Barbara Research Center. The devices are evaluation samples, not commercially available at this time. Dr. Alan Hoffman of SBRC has made the arrangements for this loan and provided considerable technical support to this project. One aim of this project has been to evaluate the performance potential of this array technology, using astronomical objects. A quick summary of our findings is given. In short, we have found the imaging properties to be excellent under both low and high background conditions and the sensitivity to be quite good (each pixel is competitive with current InSb single-detector systems in use for astronomy). We anticipate improved low-background performance when we run these detectors at a lower and more stable temperature. The device characteristics are described, laboratory testing is summarized, and the first astronomical imaging is presented. Various circuits developed (clocks, clock drivers, DC supplies, clamp-amplifier, and a real time display system) are given.

Forrest, W. J.↗
NASA NTRS1993

Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

Nakatani, I.↗
NASA NTRS1992

Laser damage tests on InSb photodiodes at 1.064 micron and 0.532 micron

InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.

Bearman, G. H.↗
NASA NTRS2000

Influence of Contact Angle, Growth Angle and Melt Surface Tension on Detached Solidification of InSb

We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130, which is significantly less than required if both ends of the ampoule are open.

Wang, Yazhen↗
NASA NTRS2004

Te-and Zn-Doped InSb Crystals Grown in Microgravity

In 2002, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation, seven doped InSb crystals were grown in microgravity at the International Space Station. The key goals of the SUBSA investigation are: (a) to clarify the origin of the melt convection in space laboratories; (b) to reduce melt convection to the level which allows reproducible diffusion-controlled segregation; (e) to explore the submerged baffle process and liquid encapsulation in microgravity. 30 crystal growth experiments were conducted in the ground unit, to optimize the design of flight ampoules and to test the transparent SUBSA furnace developed by TecMasters Inc. The specially designed furnace, allowed observation of the crystal growth process (melting, seeding, motion of the solid-liquid interface, etc.). In the summer of 2002, eight crystal growth experiments were conducted in the Microgravity Science Glovebox (MSG) facility at the ISS. Four Te-doped (k = 0.5) and three Zn-doped (k2.9) crystals were grown on undoped seeds. In one experiment, we were not able to seed and grow. The seven grown crystals were sectioned and analyzed using SIMS. The design of the SUBSA ampoules, the segregation data and the video images obtained during the SUBSA flight experiments will be presented and discussed.

Ostrogorsky, A. G.↗
NASA NTRS2009

Initial Transient in Zn-doped InSb Grown in Microgravity

Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

Ostrogorsky, A G.↗
NASA NTRS2015

Growth of InSb and InI Crystals on Earth and in Microgravity

During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in space laboratories. The subsequent analysis of the space-grown crystals revealed (i) that weak convection existed in virtually all melt-growth experiments, (ii) de-wetting significantly reduced the level of stress-induced defects, and (iii) particularly encouraging results were obtained in vapor-growth experiments. In 2002, following a decade of ground based research in growing doped Ge and GaSb crystals, a series of crystal growth experiments was performed at the ISS, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation. Te- and Zn-doped InSb crystals were grown from the melt. The specially designed furnace provided a side-view of the melt and precise seeding measurement of the growth rate. At present, under sponsorship of CASIS (Center for the Advancement of Science in Space, www.iss-casis.org), we are conducting ground-based experiments with indium mono-iodide (InI) in preparation for the "SUBSA II" ISS investigation, planned for 2017. The experiments include: i) Horizontal Bridgman (HB) growth and ii) Vapor Transport (VT) growth. Finite element modeling will also be conducted, to optimize the design of the flight ampoules, for vapor and melt growth.

Ostrogorsky, A. G.↗
DOE OSTI2025

Encapsulation of Ba in InSb Framework Introduces Chirality in Clathrate-Like BaIn 4 Sb 4

The discovery of Zintl compounds remains a powerful strategy for identifying materials with tunable electronic and thermal transport properties. During a concerted search for new inorganic clathrates with In–Sb frameworks, we discovered BaIn 4 Sb 4 . The composition of this phase deviates from that expected for a type-I clathrate with tetrahedral coordination of all In and Sb atoms (Ba 8 In 31 Sb 15 ). Instead, in the chiral structure of BaIn 4 Sb 4 (space group P 3 1 21, No. 152), a part of the In atoms have a trigonal planar coordination of 1In + 2Sb, forming Sb 2 –In–In–Sb 2 nonplanar fragments isostructural to diborane(4) B 2 H 4 with D 2 d symmetry. Ba atoms are located inside 16-vertex In 8 Sb 8 polyhedra, which share vertices and edges to form a chiral framework around the 3 1 screw axes. The title compound is electron-balanced, [Ba 2+ ][In 2+ ] 2 [In 3+ ] 2 [Sb3–] 4 , which was confirmed by characterization of the charge and heat transport properties. BaIn 4 Sb 4 exhibits a low thermal conductivity and high Seebeck coefficient, suggesting its untapped potential for thermoelectric applications. Finally, density functional theory (DFT) calculations indicate that chemical doping may enhance carrier concentration and improve the originally low electrical conductivity, thus enhancing thermoelectric performance.

electrical properties↗
DOE OSTI2026

First use of an InSb crystal for x-ray imaging spectroscopy of highly ionized tungsten in the Wendelstein 7-X stellarator

Advances in time and space resolved measurements of highly charged states of tungsten (W) through x-ray imaging spectroscopy have enabled investigation of impurity transport in the Wendelstein 7-X (W7-X) stellarator. The high-resolution x-ray imaging spectrometer (HR-XIS) system on W7-X utilizes the Bragg diffraction properties of a set of multiple crystals to measure a range of impurity emission lines within sections of the 1–7 Å wavelength range, including transitions of W. A new indium–antimonide crystal has been installed on the HR-XIS system to allow viewing of the 5.5–6.2 Å region focusing on emissions of W. Consequently, many bright W emission lines from W 40+ to W 47+ were observed in this wavelength range, both in plasmas with injected W and in those with only intrinsic W impurity sources, showing the high sensitivity of the diagnostic. Three W 46+ emissions correspond in wavelength and intensity with calculated photon emissivity coefficients and can be exploited for W transport and concentration applications in plasmas with T e ≳ 2.1 keV. Here, an estimate of the core W density behavior in two separate turbulence-reduced ‘high-performance’ (HP) discharges on W7-X is done using the 5.6893 Å W 46+ line. The n W behavior in HP scenarios can be explained by previous experimental results and neoclassical predictions.

XICS↗
NASA NTRS1972

A microwave-biased millimeter- and submillimeter-wave detector using InSb.

Description of a high-purity n-type indium antimonide sample mounted in a reentrant cavity, cooled to 4.2 K, and operated as a millimeter-wave detector. The scheme utilizes a down-conversion process, and free-carrier absorption is the mechanism responsible for the detection process. Power applied at the millimeter-wave frequency causes a change in the material conductivity, which in turn causes a change in the X-band power absorption. Cavity perturbation techniques are used to analyze the scheme. The detector was operated successfully at frequencies between 35 and 150 GHz with no long-wavelength or short-wavelength cutoff observed. The scheme offers a fast, highly sensitive, and rugged detector with low conversion loss.

Eldumiati, I. I.↗
NASA NTRS1972

Thermal conductivity of liquid InSb and liquid Ga.

The mean thermal conductivity of liquid gallium was measured as 70 (plus or minus 7) W/m/K over the range 250-550 C. For indium antimonide, Kl = 2.04Ks at the melting temperature with Kl = 9.23 W/m/K- as a reasonable absolute value.

Seidensticker, R. G.↗