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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Molecular-Scale Structure of Electrode–Electrolyte Interfaces: The Case of Platinum in Aqueous Sulfuric Acid

Knowledge of the molecular composition and electronic structure of electrified solid-liquid interfaces is key to understanding elemental processes in heterogeneous reactions. Using X-ray absorption spectroscopy in the interface-sensitive electron yield mode (EY-XAS), first-principles electronic structure calculations, and multiscale simulations, we determined the chemical composition of the interfacial region of a polycrystalline platinum electrode in contact with aqueous sulfuric acid solution at potentials between the hydrogen and oxygen evolution reactions. We found that between 0.7 and 1.3 V vs Ag/AgCl the electrical double layer (EDL) region comprises adsorbed sulfate ions with hydrated hydronium ions in the next layer. No evidence was found for bisulfate or Pt-O/Pt-OH species, which have very distinctive spectral signatures. In addition to resolving the long-standing issue of the EDL structure, our work establishes interface- and element-sensitive EY-XAS as a powerful spectroscopic tool for studying condensed phase, buried solid-liquid interfaces relevant to various electrochemical processes and devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO{sub 3}, and a band insulator, KTaO{sub 3}. For LaTiO{sub 3}/KTaO{sub 3} interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO{sub 3}-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm{sup 2}/V s) of SrTiO{sub 3} at room temperature. By using KTaO{sub 3}, we achieve mobilities in LaTiO{sub 3}/KTaO{sub 3} interfaces as high as 21 cm{sup 2}/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO{sub 3}. By density functional theory, we attribute the higher mobility in KTaO{sub 3} 2DEGs to the smaller effective mass for electrons in KTaO{sub 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2015

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The findings demonstrate the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We postulate that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.

42 ENGINEERING↗
DOE OSTI2015

Direct Visualization of Catalytically Active Sites at the FeO-Pt(111) Interface

Within the area of surface science, one of the “holy grails” is to directly visualize a chemical reaction at the atomic scale. Whereas this goal has been reached by high-resolution scanning tunneling microscopy (STM) in a number of cases for reactions occurring at flat surfaces, such a direct view is often inhibited for reaction occurring at steps and interfaces. Here we have studied the CO oxidation reaction at the interface between ultrathin FeO islands and a Pt(111) support by in situ STM and density functional theory (DFT) calculations. Time-lapsed STM imaging on this inverse model catalyst in O2 and CO environments revealed catalytic activity occurring at the FeO-Pt(111) interface and directly showed that the Fe-edges host the catalytically most active sites for the CO oxidation reaction. This is an important result since previous evidence for the catalytic activity of the FeO-Pt(111) interface is essentially based on averaging techniques in conjunction with DFT calculations. The presented STM results are in accord with DFTþU calculations, in which we compare possible CO oxidation pathways on oxidized Fe-edges and O-edges. We found that the CO oxidation reaction is more favorable on the oxidized Fe-edges, both thermodynamically and kinetically.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2014

Revisiting the Al/Al 2 O 3 Interface: Coherent Interfaces and Misfit Accommodation

We report the coherent and semi-coherent Al/α-Al 2 O 3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. In conclusion, our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al 2 O 3 composite heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Power-Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such interfaces are particularly challenging when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results.

experiments↗
DOE OSTI2014

Novel method for the prediction of an interface bonding species at alumina/metal interfaces

Interface bonding between alumina and various metals is discussed from the viewpoint of chemical thermodynamics. A method to predict the interface bonding species at an alumina/metal interface under equilibrium conditions is proposed by using the concept of chemical equilibrium for interface termination. The originality of this method is in the way a simple estimation of the interface binding energy, which is generally applicable to most metals, is developed. The effectiveness of this method is confirmed by careful examination of the experimental results. Comparison of the predicted and experimentally observed interface terminations reveals that the proposed method agrees well with the reported results. The method uses only basic quantities of pure elements and the formation enthalpy of oxides. Therefore, it can be applied to most metals in the periodic table and is useful for screening materials in the quest to develop interfaces with particular functions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Dependence of interface energetics and kinetics on catalyst loading in a photoelectrochemical system

Solar hydrogen production by the photoelectrochemical method promises a means to store solar energy. While it is generally understood that the process is highly sensitive to the nature of the interface between the semiconductor and the electrolyte, a detailed understanding of this interface is still missing. For instance, few prior studies have established a clear relationship between the interface energetics and the catalyst loading amount. Here we aim to study this relationship on a prototypical Si-based photoelectrochemical system. Two types of interfaces were examined, one with GaN nanowires as a protection layer and one without. It was found that when GaN was present, higher Pt loading (> 0.1 μg/cm 2 ) led to not only better water reduction (and, hence, hydrogen evolution) kinetics but also more favorable interface energetics for greater photovoltages. In the absence of the protection layer, by stark contrast, increased Pt loading exhibited no measurable influence on the interface energetics, and the main difference was observed only in the hydrogen evolution kinetics. Furthermore, the study sheds new light on the importance of interface engineering for further improvement of photoelectrochemical systems, especially concerning the role of catalysts and protection layers.

14 SOLAR ENERGY↗
DOE OSTI2014

Simulations and Analysis of the Reshocked Inclined Interface Richtmyer–Meshkov Instability for Linear and Nonlinear Interface Perturbations

A computational study of the Richtmyer–Meshkov instability (RMI) is presented for an inclined interface perturbation in support of experiments being performed at the Texas A&M shock tube facility. The study is comprised of 2D, viscous, diffusive, compressible simulations performed using the arbitrary Lagrange Eulerian code, ARES, developed at Lawrence Livermore National Laboratory. These simulations were performed to late times after reshock with two initial interface perturbations, in the linear and nonlinear regimes each, prescribed by the interface inclination angle. The interaction of the interface with the reshock wave produced a complex 2D set of compressible wave interactions including expansion waves, which also interacted with the interface. Distinct differences in the interface growth rates prior to reshock were found in previous work. The current work provides in-depth analysis of the vorticity and enstrophy fields to elucidate the physics of reshock for the inclined interface RMI. After reshock, the two cases exhibit some similarities in integral measurements despite their disparate initial conditions but also show different vorticity decay trends, power law decay for the nonlinear and linear decay for the linear perturbation case.

42 ENGINEERING↗
DOE OSTI2017

Hidden Interface Driven Exchange Coupling in Oxide Heterostructures

A variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. However, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. Our results shed new light on using oxide interfaces to design functional spintronic devices.

epitaxial thin films↗
DOE OSTI2018

A method for site-specific and cryogenic specimen fabrication of liquid/solid interfaces for atom probe tomography

A site-specific, cryogenic, focused ion beam (FIB) method is presented for the preparation of atom probe tomography (APT) specimens from a frozen liquid/solid interface. As a practical example, the interface between water and a corroded boroaluminosilicate glass has been characterized by APT for the first time. The water/glass interface is preserved throughout specimen preparation by plunge freezing the corroding glass particles with the corrosion solution into slush nitrogen. Site-specific specimen preparation is enabled through a new approach to extract and mount a small volume of material using a cryogenically cooled FIB stage and micromanipulator. The prepared APT specimens are subsequently transferred from the FIB to APT under cryogenic and high-vacuum conditions using a novel FIB/APT transfer shuttle and home-built environmental transfer hub attached to the APT system. Particular focus is given to the technical methods for specimen fabrication under cryogenic conditions. Persistent challenges are discussed in addition to future opportunities for this new specimen preparation method.

cryogenic FIB, atom probe tomography (APT), corros↗
DOE OSTI2021

New Insights into Secondary Organic Aerosol Formation at the Air–Liquid Interface

Air-liquid interfacial processing of volatile organic compound oxidation has been suggested as an important source of secondary organic aerosols. However, owing to the lack of techniques for in situ air-liquid interface analysis, the detailed interfacial mechanism remains speculative. To obviate this, the analysis of air-liquid interfacial reactions and the dynamics of glyoxal oxidation as a model volatile organic compound using in situ liquid synchrotron-based vacuum ultraviolet single photon ionization mass spectrometry enabled by the system for analysis at the liquid vacuum interface microreactor is reported. This approach allows for determination of reaction intermediates and oxidation products including polymers and oligomers at the air-liquid interface by mass spectral analysis and appearance energy measurements. Furthermore, an expanded reaction mechanism of photooxidation free radical induced reactions as a source of aqueous secondary organic aerosol formation is proposed based on these new results, suggesting that single photon ionization could be applied to provide unique insights into interfacial chemistry changing the earth atmospheric composition.

aqueous secondary organic aerosol, glyoxal, photoo↗
DOE OSTI2020

Accelerated Cu2O Reduction by Single Pt Atoms at the Metal-Oxide Interface§

The reducibility of metal oxides, when serving as the catalyst support or the active sites themselves, plays an important role in heterogeneous catalytic reactions. Here we present an integrated experimental and theoretical study that reveals how the addition of small amounts of atomically dispersed Pt at the metal/oxide interface dramatically enhances the reducibility of a Cu2O thin film by H2. X-ray photoelectron spectroscopy (XPS) and temperature-programmed desorption (TPD) results reveal that upon oxidation, a PtCu single-atom alloy (SAA) surface is covered by a thin Cu2O film and is therefore unable to dissociate H2. Despite this, in situ studies using ambient pressure (AP) XPS reveal that the presence of a small amount of Pt under the oxide layer can, at the single-atom limit, promote the reduction of Cu2O by H2 at room temperature. We build two density functional theory based surface models to better understand these experimental findings: A Cu2O/Cu(111)-like surface oxide layer, known as the ‘29’ oxide, in which Pt is alloyed into the Cu(111) surface as well as a PtCu SAA. Our calculations suggest that the increased activity is due to the presence of atomically dispersed Pt under the surface oxide layer, which weakens the Cu-O bonds in its immediate vicinity, thus making the interface between subsurface Pt and the surface oxide a nucleation site for the formation of metallic Cu. This initial step in the reduction process results in the presence of surface Pt atoms surrounded by metallic Cu patches, and the Pt atoms become active in H2 dissociation, which consequently accelerates the reduction of the oxide layer. This work demonstrates how isolated Pt atoms at the metal/oxide interface of a Cu-based catalyst accelerate the reduction of the oxide and, therefore, helps maintain the active, reduced state of the catalyst under reaction conditions, as is required for the synthesis of methanol from CO2 hydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗