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At least 73 records · Page 4

Self-duality and a Hall-insulator phase near the superconductor-to-insulator transition in indium-oxide films

We combine measurements of the longitudinal ( ρ x x ) and Hall ( ρ x y ) resistivities of disordered 2D amorphous indium-oxide films to study the magnetic-field tuned superconductor-to-insulator transition (H-SIT) in the T → 0 limit. At the critical field, H c , the full resistivity tensor is T independent with ρ x x ( H c ) = h / 4 e 2 and ρ x y ( H c ) = 0 within experimental uncertainty in all films (i.e., these appear to be “universal” values); this is strongly suggestive that there is a particle–vortex self-duality at H = H c . The transition separates the (presumably) superconducting state at H < H c from a “Hall-insulator” phase in which ρ x x → ∞ as T → 0 whereas ρ x y approaches a nonzero value smaller than its “classical value” H / n e c ; i.e., 0 < ρ x y < H / n e c . A still higher characteristic magnetic field, H c * > H c , at which the Hall resistance is T independent and roughly equal to its classical value, ρ x y ≈ H / n e c , marks an additional crossover to a high-field regime (probably to a Fermi insulator) in which ρ x y > H / n e c and possibly diverges as T → 0 . We also highlight a profound analogy between the H-SIT and quantum-Hall liquid-to-insulator transitions (QHIT).

14 SOLAR ENERGY↗

Interfacial Coupling-Induced Ferromagnetic Insulator Phase in Manganite Film

Interfaces with subtle differences in atomic and electronic structures in perovskite ABO 3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. Here, we report an integrated study of unusual transport, magnetic, and structural properties of Pr 0.67 Sr 0.33 MnO 3 film on SrTiO 3 substrate. The variations in the out-of-plane lattice constant and BO 6 octahedral rotation across the Pr 0.67 Sr 0.33 MnO 3 /SrTiO 3 interface strongly depend on the thickness of the Pr 0.67 Sr 0.33 MnO 3 film. In the 12-nm film, a new interface-sensitive ferromagnetic polaronic insulator (FI') phase is formed during the cubic-to-tetragonal phase transition of SrTiO 3 , apparently due to the enhanced electron–phonon interaction and atomic disorder in the film. The transport properties of the FI' phase in the 30-nm film are masked because of the reduced interfacial coupling and smaller interface-to-volume ratio. In conclusion, this work demonstrates how thickness-dependent interfacial coupling leads to the formation of a theoretically predicted ferromagnetic–polaronic insulator, as illustrated in a new phase diagram, that is otherwise ferromagnetic metal (FM) in bulk form.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tunable magnons of an antiferromagnetic Mott insulator via interfacial metal-insulator transitions

Antiferromagnetic insulators present a promising alternative to ferromagnets due to their ultrafast spin dynamics essential for low-energy terahertz spintronic device applications. Magnons, i.e., quantized spin waves capable of transmitting information through excitations, serve as a key functional element in this paradigm. However, identifying external mechanisms to effectively tune magnon properties has remained a major challenge. Here we demonstrate that interfacial metal-insulator transitions offer an effective method for controlling the magnons of Sr 2 IrO 4 , a strongly spin-orbit coupled antiferromagnetic Mott insulator. Resonant inelastic x-ray scattering experiments reveal a significant softening of zone-boundary magnon energies in Sr 2 IrO 4 films epitaxially interfaced with metallic 4 d transition-metal oxides. Therefore, the magnon dispersion of Sr 2 IrO 4 can be tuned by metal-insulator transitions of the 4 d transition-metal oxides. We tentatively attribute this non-trivial behavior to a long-range phenomenon mediated by magnon-acoustic phonon interactions. Our experimental findings introduce a strategy for controlling magnons and underscore the need for further theoretical studies to better understand the underlying microscopic interactions between magnons and phonons.

magnetic properties and materials↗

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

A simple numerical method for processing the data of the high-frequency capacitance–voltage characteristics of metal–insulator–semiconductor structures is proposed. The approach is based on analyzing the experimental characteristics near the flat-band states, where the charge exchange of surface localized electron states is of little importance compared with changes in the near-boundary charged layer in the semiconductor. The developed technique makes it possible, first, to find the necessary parameters of the semiconductor and insulating layer and, second, to obtain the experimental field dependences of the energy-band bending in the semiconductor and the total concentration of the built-in charge, the charge of boundary states and minority charge carriers at the semiconductor–insulator interface in the range from the flat bands to deep depletion. The technique is well applicable to structures with an ultra-thin insulating layer. On n-Si-based metal–oxide–semiconductor samples with an oxide thickness of 39 Å, experimental approbation of the proposed approach is carried out. The accuracy of the obtained results is 2–3%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hollow‐Structured Materials for Thermal Insulation

Abstract Heating and cooling represent a significant portion of overall energy consumption of our society. Due to the diffusive nature of thermal energy, thermal insulation is critical for energy management to reduce energy waste and improve energy efficiency. Thermal insulation relies on the reduction of thermal conductivity of appropriate materials that are engineerable in compositions and structures. Hollow‐structured materials (HSMs) show a great promise in thermal insulation since the existence of high‐density gaseous voids breaks the continuity of heat‐transport pathways in the HSMs to lower their thermal conductivities efficiently. Herein, a timely overview of the recent progress in developing HSMs for thermal insulation is presented, with the focus on summarizing the strategies for creating gaseous voids in solid materials and thus synthesizing various HSMs. Systematic analysis of the documented results reveals the relationship of thermal conductivities of the HSMs and the size and density of voids, i.e., reducing the void size below ≈350 nm is more favorable to decrease the thermal conductivity of the HSMs because of the possible confinement effect originated from the nanometer‐sized voids. The challenges and promises of the HSMs faced in future research are also discussed.

Hu, Feng↗

Pressure‐Dependent “Insulator–Metal–Insulator” Behavior in Sr‐Doped La 3 Ni 2 O 7

Abstract Recently, superconductivity at high temperatures is observed in bulk La 3 Ni 2 O 7−δ under high pressure. However, the attainment of high‐purity La 3 Ni 2 O 7−δ single crystals remains a formidable challenge. Here, the crystal structure and physical properties of single crystals of Sr‐doped La 3 Ni 2 O 7 synthesized at high pressure (20 GPa) and high temperature (1400 °C) are reported. Through single crystal X‐ray diffraction, it is shown that high‐pressure‐synthesized paramagnetic Sr‐doped La 3 Ni 2 O 7 crystallizes in an orthorhombic structure with Ni─O─Ni bond angles of 173.4(2)° out‐of‐plane and 175.0(2)°and 176.7(2)°in plane. The substitution of Sr alters in band filling and the ratio of Ni 2+ /Ni 3+ in Sr‐doped La 3 Ni 2 O 7 , aligning them with those of “La 3 Ni 2 O 7.05” , thereby leading to significant modifications in properties under high pressure relative to the unsubstituted parent phase. At ambient pressure, Sr‐doped La 3 Ni 2 O 7 exhibits insulating properties, and the conductivity increases as pressure goes up to 10 GPa. However, upon further increasing pressure beyond 10.7 GPa, Sr‐doped La 3 Ni 2 O 7 transits back from a metal‐like behavior to an insulator. The insulator–metal–insulator trend under high pressure dramatically differs from the behavior of the parent compound La 3 Ni 2 O 7−δ , despite their similar behavior in the low‐pressure regime. These experimental results underscore the considerable challenge in achieving superconductivity in nickelates.

36 MATERIALS SCIENCE↗

A Polar Magnetic and Insulating Double Corundum Oxide: Mn2MnSbO6 with Ordered Mn(II) and Mn(III) Ions

A new magnetic insulator Mn2MnSbO6 with a polar crystal structure and an ordered Mn2+ and Mn3+ arrangement was synthesized under a high pressure of 7.5 GPa and 1300 degrees C. The crystal structure of Mn2MnSbO6, investigated by synchrotron powder X-ray diffraction, was found to be isomorphous with that of Ni3TeO6-type, space group R3. The non-centrosymmetric structure was confirmed by the second-harmonic generation measurements. The X-ray absorption near-edge spectroscopy measurement confirmed the nominal oxidation states of Mn22+Mn3+SbO6. Magnetic measurements indicate that Mn2MnSbO6 orders antiferromagnetically below 44 K and undergoes a field-induced spin-flop transition at 5 K. First-principles calculations indicate an antiferromagnetic ground state with up/up/up/down/down/down (uuuddd) spin configuration of the six crystallographically unique Mn ions in the c-axis doubled magnetic structure. The density functional theory calculations also substantiate the experimentally observed charge ordering of the Mn2+/Mn3+ ions and the insulating behavior due to a bandgap of 0.52 eV. To the best of our knowledge, this is the first double corundum oxide containing Jahn-Teller active Mn3+ ions.

Feng, Hai L.↗

Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films

Magnetic insulators are important materials for a range of next-generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators that can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling, which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single-crystal (Mg 0.2 Ni 0.2 Fe 0.2 Co 0.2 Cu 0.2 )Fe 2 O 4 films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Furthermore, local and global magnetic measurements further demonstrate how strain can be used to manipulate the magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next-generation magnetic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Origins of enhanced thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films

In this research, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materials with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bipolar effect in transport properties for the 6 nm thick film, an impressive power factor of about 2.0 mW m{sup −1} K{sup −2} is achieved at room temperature for this film. Further investigations of the electronic transport properties of TSS and interactions between TSS and the bulk band might result in a further improved thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Evidence of Photo-induced Dynamic Competition of Metallic and Insulating Phase in a Layered Manganite.

We show evidence that the competition between the antiferromagetic metallic phase and the charge- and orbital-ordered insulating phase at the reentrant phase boundary of a layered manganite, LaSr2Mn2O7, can be manipulated using ultrafast optical excitation. The time- dependent evolution of the Jahn-Teller superlattice reflection, which indicates the formation of the charge and orbital order, was measured at different laser fluences. The laser-induced enhancement and reduction the Jahn-Teller reflection intensity shows a reversal of sign between earlier (~10 ns) and later (~150 ns) time delays during the relaxation after photo excitation. This effect is consistent with a scenario whereby the laser excitation modulates the local competition between the metallic and the insulating phases.

Li, Yuelin↗

Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition

Here, we present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca 3 Ru 2 O 7 . Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattice-charge coupling. This study further provides a model approach to search for CMR systems other than manganites, such as Mott insulators in the vicinity of the boundary between competing phases.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Pressure-Induced Confined Metal from the Mott Insulator Sr 3 Ir 2 O 7

The spin-orbit Mott insulator Sr 3 Ir 2 O 7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr 3 Ir 2 O 7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Observation of cyclotron resonance and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu 0.02 Bi 2 Se 3

We have utilized magneto-optical time-domain spectroscopy to investigate the low frequency optical response of topological insulator Cu 0.02 Bi 2 Se 3 and Bi 2 Se 3 films. With both field and frequency depedence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both samples. The small amount of Cu substitution into the Cu 0.02 Bi 2 Se 3 induces a true bulk insulator with only a single conduction channel with total sheet carrier density 4.9 x 10 12 /cm 2 and mobility as large as 4000 cm 2 /V s. This is consistent with pure topological surface state (TSSs) conduction with a chemical potential 150 meV above the Dirac point. Hence, a true topological insulator with an insulating bulk is realized. The CR broadens at high fields, an e ect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis on the zero field data. In contrast to Cu 0.02 Bi 2 Se 3 , two charge channels were observed in normal Bi 2 Se 3 films. We demonstrate a method to distinguish between the dominant TSSs and trivial bulk/2DEG states. The dominant channel exhibits a CR with a carrier density of ~2.0 x 10 13 /cm 2 and mobility ~3200 cm 2 /V s, consistent with TSSs with a chemical potential ~350meV above the Dirac point.

36 MATERIALS SCIENCE↗

Sealed and Insulated Attic Hygrothermal Performance in New California Homes Using Vapor and Air Permeable Insulation—Field Study and Simulation

This project investigated the thermal and moisture performance of a low-cost approach to sealing and insulating attics using glass fiber insulation. The work included a combination of: (1) field measurements of attic and HVAC system performance in two new, high-performance homes in California’s Central Valley (Fresno), and (2) hygrothermal simulations of attic performance. Each field study attic was continuously monitored at multiple locations for over a year for wood moisture content, air humidity, condensation, temperature, and heat flux, together with on-site weather and solar conditions. The Fresno test home showed periodic condensation and high surface wood moisture content, but no surface mold or degradation upon visual inspection at the end of the test period. The Clovis test home showed less indication of high moisture levels—either from surface condensation or wood moisture content—but did have visible suspected mold growth on the inside of the North sheathing at the end of the field testing. These results show the limitations of current moisture measurement techniques focused on wood moisture content, rather than potential for mold growth. From a thermal/energy perspective the attics were close to indoor conditions thereby realizing the design intent for reducing duct system losses. Simulated site HVAC energy savings for sealed vs. vented attics averaged 18% across California climate regions (8% TDV energy savings). Savings were dominated by heating energy reductions; cooling savings were substantially lower. The moisture issues are investigated in greater detail in the simulations. First, we identified the climate regions and house characteristics that are associated with increased risk of mold growth or wood rot in new CA homes. Climate region was very important in determining risk, as were house features that reduced outside air exchange (e.g., 1-story homes, very tight envelopes, very tight attics, no IAQ fan), along with those that increased flow of moist air from the living space to the attic (e.g., supply ventilation fans, larger ceiling leaks, duct leakage). Second, we investigated several approaches to reduce moisture risks, and the best approach was to use a vapor retarder on the inner face of the fiberglass insulation. Both the field and simulation results indicate that the use of air and vapor permeable insulation can be acceptable from a thermal/energy point of view, but additional measures need to be taken to reduce moisture risks, primarily from mold growth.

42 ENGINEERING↗

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗

Measured moisture performance of sealed and insulated attics with permeable insulation in california homes

This study performed detailed thermal and moisture measurements in two homes in Fresno and Clovis, California with sealed attics insulated with glass fiber insulation to determine moisture performance in inland California climates. Data were recorded once every minute for more than a year in each home to allow detailed observation of time-varying moisture and thermal conditions. Moisture measurements were taken at multiple locations in each attic and included wood moisture, surface condensation and surface relative humidity. The results showed that there are strong solar-driven diurnal cycles in attic wood and air moisture content, as well as longer-term seasonal and annual variations. Mold growth was obdserved on the North roof deck in one of the two homes even in this sunny dry climate with attics built in compliance with California building codes that specifically address sealed and insulated attics with vapor-permeable insulation. We investigated moisture stratification in the attic and found that, although there is stratification during sunny daytime hours, this was not when wood moisture content, surface humidity or surface condensation are high. Therefore, other moisture transport mechanisms are acting to increase moisture levels near the roof peak. Finally, our measurements also showed that the attic with the highest measured moisture levels did not have any mold growth, while mold was visually observed in the attic whose measurements indicted little or no concern, indicating that the state-of-the-art in moisture measurement and mold growth prediction in building assemblies may be insufficient.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Measured Moisture Performance of Sealed and Insulated Attics with Permeable Insulation In California Homes

This study performed detailed thermal and moisture measurements in two homes in Fresno and Clovis, California with sealed attics insulated with glass fiber insulation to determine moisture performance in inland California climates. Data were recorded once every minute for more than a year in each home to allow detailed observation of time-varying moisture and thermal conditions. Moisture measurements were taken at multiple locations in each attic and included wood moisture, surface condensation and surface relative humidity. The results showed that there are strong solar-driven diurnal cycles in attic wood and air moisture content, as well as longer-term seasonal and annual variations. Mold growth was obdserved on the North roof deck in one of the two homes even in this sunny dry climate with attics built in compliance with California building codes that specifically address sealed and insulated attics with vapor-permeable insulation. We investigated moisture stratification in the attic and found that, although there is stratification during sunny daytime hours, this was not when wood moisture content, surface humidity or surface condensation are high. Therefore, other moisture transport mechanisms are acting to increase moisture levels near the roof peak. Finally, our measurements also showed that the attic with the highest measured moisture levels did not have any mold growth, while mold was visually observed in the attic whose measurements indicted little or no concern, indicating that the state-of-the-art in moisture measurement and mold growth prediction in building assemblies may be insufficient.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator–Topological Insulator Sandwiched Heterostructure

Quantum materials that combine magnetism with topological order are emerging as key platforms for next-generation spintronics and low-energy electronics. They enable the realization of emergent quantum phenomena, such as the quantum anomalous Hall effect and axion insulator states. The ferromagnetic insulator (FMI)/topological insulator (TI)/FMI sandwich structure of a single-septuple layer (1SL) MnBi 2 Te 4 /four-quintuple layer (4QL) Bi 2 Te 3 /1SL MnBi 2 Te 4 holds great potential to achieve such desirable quantum phenomena at an elevated temperature, owing to its large Dirac point band gap and high Curie temperature. Here, for this work, spin- and angle-resolved photoemission spectroscopy (spin-ARPES) is employed to directly verify that the band gap arises from broken time-reversal symmetry via proximity-driven magnetization. This study demonstrates direct control of the spin state via external magnetic fields and unambiguously confirms the exchange interaction as the gap-opening mechanism. The robust magnetic gap and controllable spin texture make this heterostructure a suitable candidate for spintronic applications and magnetic topological quantum phases.

exchange gap↗