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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A superconducting microbridge small enough to exhibit the Josephson effect has been shunted by a large external capacitance. Surprisingly little capacitive hysteresis is observed in its I-V characteristic. Prominent subgap structures are seen. The resistively shunted junction (RSJ) model fails to explain the observations.
A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.
Hot-ion hydrogen plasma experiments were conducted in the NASA Lewis HIP-1 magnetic mirror facility to determine how the ion temperature was influenced by the axial position of the cathode tips relative to the anodes. A steady-state EXB plasma was formed by applying a strong radially inward dc electric field near the throats of the magnetic mirrors. The dc electric field was created between hollow cathode rods inside hollow anode cylinders, both concentric with the magnetic axis. The highest ion temperatures, 900 eV, were attained when the tip of each cathode was in the same plane as the end of its anode. These temperatures were reached with 22 kV applied to the electrodes in a field of 1.1 tesla. Scaling relations were empirically determined for ion temperature and the product of ion density and neutral particle density as a function of cathode voltage, discharge current, and electrode positions. Plasma discharge current vs voltage (I-V) characteristics were determined.
A mechanically stable single block mixer design is described utilizing a recessed whisker and beamwidth equalization lens. A stripline I.F. matching section which is an integral part of the mixer is presented. Engineering measurements of wire grids and dielectric transmission loss near one millimeter wavelength are given and an anomolous I-V curve behavior observed during diode whiskering is discussed.
A new metal-oxide-metal device (Ni-NiO-Ni, Edge MOM) which is stable, reproducibly fabricated, and with a 10 to the -10th sq cm tunneling area is presented. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 microns. Similar devices with 10 to the -8th sq cm tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-micron range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.
A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.
The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.
High area throughput rate will be required for the economical production of silicon dendritic web for solar cells. Web width depends largely on the temperature distribution on the melt surface while growth speed is controlled by the dissipation of the latent heat of fusion. Thermal models were developed to investigate each of these aspects, and were used to engineer the design of laboratory equipment capable of producing crystals over 4 cm wide; growth speeds up to 10 cm/min were achieved. The web crystals were characterized by resistivity, lifetime and etch pit density data as well as by detailed solar cell I-V data. Solar cells ranged in efficiency from about 10 to 14.5% (AM-1) depending on growth conditions. Cells with lower efficiency displayed lowered bulk lifetime believed to be due to surface contamination.
The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.
Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.
An earlier calculation of the I-V characteristics of solar cells contains a mistake. The current generated by light within the depletion layer is too large by a factor of 2. When this mistake is corrected, not only are all previous conclusions unchanged, but the agreement with experiment becomes better. Results are presented in graphical form of new computations which not only take account of the factor of 2, but also include more recent data on material parameters.
The DEGRA computer code that is based on a mathematical model which predicts performance and time-temperature dependent degradation of a radioisotope thermoelectric generator is discussed. The computer code has been used to predict performance and generator degradation for the selenide Ground Demonstration Unit (GDS-1) and the generator used in the Galileo Project. Results of parametric studies of load voltage vs generator output are examined as well as the I-V curve and the resulting predicted power vs voltage. The paper also discusses the increased capability features contained in DEGRA2 and future plans for expanding the computer code performance.
Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.
A developmental process for fabricating 2 X 4 cm back surface field silicon solar cells featuring wraparound contacts and screen printed dielectric isolation is described. The process was then used to fabricate a number of cells for evaluation and study, as well as to establish the validity of the process sequence. While a number of cells exhibiting relatively good conversion efficiencies were produced, nearly all had low I-V curve factors for the level of efficiencies attained. Cells with conversion efficiencies of more than 15 percent (air mass zero and 25 C) had fill factors of only 0.76. Evidence as to the cause of this has not been conclusive, but is most probably linked to isolation failure in the wraparound dielectric and associated shunting problems.
Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.
The plating sequences Pd-Cr-Cu and Pd-Ni-Cu are demonstrated. The surface was sensitized with a 50 A-thick Pd layer obtained from an immersion bath. After 15 min heating at 400 C in N2, a thin barrier layer of either Cr or Ni was deposited from electroless baths operated at temperatures around 90 C. The sintering process was repeated, and a thin copper layer of 500 A was deposited by electroless means. An electrolytic copper bath was used to build the copper layer to 3-4 micron thicknesses. Cells with good I-V curves were obtained, and the all-plated contacts had good adhesion. Preliminary cost estimates show that the process costs approximately 12 cents per watt excluding the cost of the masking procedure.
Gallium arsenide concentrator cells were irradiated with electrons with energies varying from 0.4 to 2.3 MeV, and their electrical performance was measured. The cells are 5 x 5 mm square with a 4-mm diameter illuminated area. At each of four different electron energy levels (0.4, 0.7, 1.0, and 2.3 MeV), three n/p and two p/n cells were irradiated. I-V performance measurements were made prior to irradiation and at several intermediate fluence levels. The final fluence level was 3 X 10 to the 15th e/sq cm. It is concluded that the power degradation is independent of the temperature at which it is measured.
A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.