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At least 73 records · Page 4

An adaptive array antenna for mobile satellite communications

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Milne, Robert↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗

Extended performance solar electric propulsion thrust system study. Volume 5. Capacitor-diode voltage multiplier: Technology evaluation

A 1-kW capacitor-diode voltage multiplier (CDVM) was designed, fabricated and tested to demonstrate the power of feasibility of high power CDVM's and to verify the analytical techniques that had been used to predict the performance characteristics of a 6-kw CDVM. High efficiency (96.2%), a low ratio of component weight to power (0.55 kg/kW), and low output ripple voltage (less than 1%, peak to peak) were obtained during the operation of a 1-kW CDVM various input line, load current, and load fault conditions.

Martinelli, R. M.↗

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

A theoretical analysis is presented of certain peculiarities of the current-voltage characteristics of silicon solar cells, involving high values of the empirical constant A in the diode equation for a p-n junction. An attempt was made in a lab experiment to demonstrate that the saturation current which is associated with the exponential term qV/A2kT of the I-V characteristic, with A2 roughly equal to 2, originates in the space charge region and that it can be increased, as observed on ATS-1 cells, by the introduction of additional defects through low energy proton irradiation. It was shown that the proton irradiation introduces defects into the space charge region which give rise to a recombination current from this region, although the I-V characteristic is, in this case, dominated by an exponential term which has A = 1.

Wolf, M.↗

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗

Lightweight multiple output converter development

A high frequency, multiple output power conditioner was developed and breadboarded using an eight-stage capacitor diode voltage multiplier to provide +1200 Vdc, and a three-stage for -350 Vdc. In addition, two rectifier bridges were capacitively coupled to the eight-stage multiplier to obtain 0.5 and 0.65 a dc constant current outputs referenced to +1200 Vdc. Total power was 120 watts, with an overall efficiency of 85 percent at the 80 kHz operating frequency. All outputs were regulated to three percent or better, with complete short circuit protection. The power conditioner component weight and efficiency were compared to the equivalent four outputs of the 10 kHz conditioner for the 8 cm ion engine. Weight reduction for the four outputs was 557 grams; extrapolated in the same ratio to all nine outputs, it would be 1100 to 1400 grams.

Kisch, J. J.↗

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗

Testing of an Arcjet Thruster with Capability of Direct-Drive Operation

Electric thrusters typically require a power processing unit (PPU) to convert the spacecraft provided power to the voltage-current that a thruster needs for operation. Testing has been initiated to study whether an arcjet thruster can be operated directly with the power produced by solar arrays without any additional conversion. Elimination of the PPU significantly reduces system-level complexity of the propulsion system, and lowers developmental cost and risk. The work aims to identify and address technical questions related to power conditioning and noise suppression in the system and heating of the thruster in long-duration operation. The apparatus under investigation has a target power level from 400-1,000 W. However, the proposed direct-drive arcjet is potentially a highly scalable concept, applicable to solar-electric spacecraft with up to 100's of kW and beyond. A direct-drive electric propulsion system would be comprised of a thruster that operates with the power supplied directly from the power source (typically solar arrays) with no further power conditioning needed between those two components. Arcjet thrusters are electric propulsion devices, with the power supplied as a high current at low voltage; of all the different types of electric thruster, they are best suited for direct drive from solar arrays. One advantage of an arcjet over Hall or gridded ion thrusters is that for comparable power the arcjet is a much smaller device and can provide more thrust and orders of magnitude higher thrust density (approximately 1-10 N/sq m), albeit at lower I(sub sp) (approximately 800-1000 s). In addition, arcjets are capable of operating on a wide range of propellant options, having been demonstrated on H2, ammonia, N2, Ar, Kr, Xe, while present SOA Hall and ion thrusters are primarily limited to Xe propellant. Direct-drive is often discussed in terms of Hall thrusters, but they require 250-300 V for operation, which is difficult even with high-voltage solar arrays. The arcjet requires under 100 V, which is more in-line with what is easily possible with a solar array. Direct-drive of an electric propulsion system confers the advantage of reducing or eliminating the power processing unit (PPU) that is typically needed to convert the spacecraft-provided power to the voltage and current needed for thruster operation. Since the PPU is typically the most expensive piece of an electric thruster system, from both a fabrication and qualification standpoint, its elimination offers the potential for major reductions in system cost and risk. The design of the arcjet built for this effort was based on previous low power (1 kW class) arcjets. It has a precision machined 99.95% pure tungsten anode which also serves as the nozzle. The anode constrictor region is 1 mm (0.040-in) diameter and 1 mm (0.040-in) long. The cathode is a tungsten welding electrode doped with LaO2; its tip was precision ground to a 30◦ angle ending in a blunt end. The two electrodes are separated by a boron-nitride insulator which also serves as the propellant injection manifold; it ends in six small holes which introduce the propellant gas in the diverging section of the nozzle, directly adjacent to the cathode. The electrodes and insulator are housed in a stainless-steel outer-body, with a Macor insulator at the mid-plane to provide thermal isolation between the front and back halves of the device. The gas seals were made using Grafoil gaskets. Figure 1A shows the assembled thruster in the vacuum chamber; figure 1B shows the thruster in operation on argon at a flow rate of 676 sccm (20 mg/s). Initial testing was conducted in a 3.5-ft diameter vacuum chamber; the ultimate pressure reached during quasi-steady operation of the thruster was about 330 millitorr. The thruster was powered with a high-current, 0-100A, 15 kW power supply. The discharge was initiated with a high-voltage (approximately 10 kV) spark initiator that was isolated from the supply by a stack of diodes. The testing indicated that an operating point exists within the I-V characteristics that is compatible with direct-drive solar-electric operation; for a flow rate of 20 mg/s (argon) the arc could be sustained at a voltage of about 20 V and a current of 25 A (500W).

Martin, Adam K.↗

Power supply conditioning circuit

A conditioning circuit is provided with a constant current diode in series with a zener diode, the former having a high dynamic impedance and the latter a low dynamic impedance. The constant current diode can receive an input voltage with PARD. In conjunction with the zener diode fixed to a ground, a voltage divider is provided which can give an output voltage whose PARD was significantly reduced. The conditioning circuit is effective down to dc.

Primas, Lori E.↗

Automated Cryocooler Monitor and Control System

A system was designed to automate cryogenically cooled low-noise amplifier systems used in the NASA Deep Space Network. It automates the entire operation of the system including cool-down, warm-up, and performance monitoring. The system is based on a single-board computer with custom software and hardware to monitor and control the cryogenic operation of the system. The system provides local display and control, and can be operated remotely via a Web interface. The system controller is based on a commercial single-board computer with onboard data acquisition capability. The commercial hardware includes a microprocessor, an LCD (liquid crystal display), seven LED (light emitting diode) displays, a seven-key keypad, an Ethernet interface, 40 digital I/O (input/output) ports, 11 A/D (analog to digital) inputs, four D/A (digital to analog) outputs, and an external relay board to control the high-current devices. The temperature sensors used are commercial silicon diode devices that provide a non-linear voltage output proportional to temperature. The devices are excited with a 10-microamp bias current. The system is capable of monitoring and displaying three temperatures. The vacuum sensors are commercial thermistor devices. The output of the sensors is a non-linear voltage proportional to vacuum pressure in the 1-Torr to 1-millitorr range. Two sensors are used. One measures the vacuum pressure in the cryocooler and the other the pressure at the input to the vacuum pump. The helium pressure sensor is a commercial device that provides a linear voltage output from 1 to 5 volts, corresponding to a gas pressure from 0 to 3.5 MPa (approx. = 500 psig). Control of the vacuum process is accomplished with a commercial electrically operated solenoid valve. A commercial motor starter is used to control the input power of the compressor. The warm-up heaters are commercial power resistors sized to provide the appropriate power for the thermal mass of the particular system, and typically provide 50 watts of heat. There are four basic operating modes. "Cool " mode commands the system to cool to normal operating temperature. "Heat " mode is used to warm the device to a set temperature near room temperature. "Pump " mode is a maintenance function that allows the vacuum system to be operated alone to remove accumulated contaminants from the vacuum area. In "Off " mode, no power is applied to the system.

Britcliffe, Michael J.↗

A dc to dc converter

The object of the invention is to provide an improved converter for converting one direct current voltage to another. A plurality of phased square wave voltages are provided from a ring counter through amplifiers to a like plurality of output transformers. Each of these transformers has two windings, and S(1) winding and an S(2) winding. The S(1) windings are connected in series, then the S(2) windings are connected in series, and finally, the two sets of windings are connected in series. One of six SCRs is connected between each two series connected windings to a positive output terminal and one of diodes is connected between each set of two windings of a zero output terminal. By virtue of this configuration, a quite high average direct current voltage is obtained, which varies between full voltage and two-thirds full voltage rather than from full voltage to zero. Further, its variation, ripple frequency, is reduced to one-sixth of that present in a single phase system. Application to raising battery voltage for an ion propulsion system is mentioned.

Willis, A. E.↗

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Frez, Clifford F.↗

High current compensation network for dc logarithmic amplifiers

Circuit voltage output is reduced by voltage equivalent to ampere resistance drop of nonlogarithmic resistances of practical diodes; therefore, output is same as circuit using ideal diode. Circuit applies to meter and electronic recorder movements, and improves performance of radiation detectors and several microbiological monitoring devices

Wilson, J. H.↗

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

Neudeck, P. G.↗

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗

Avalanche-diode oscillator circuit with tuning at multiple frequencies

Detailed theoretical analysis of three different modes or types of high efficiency oscillation in a PIN diode are presented. For the TRAPATT mode in a PIN diode, it is shown that a traveling avalanche zone is not necessary to generate a dense trapped plasma. An economical computer program for TRAPATT oscillations in a PIN diode is described. Typical results of diode power, dc-to-RF conversion efficiency, and required circuit impedances are presented for several different current waveforms. A semianalytical solution for a second type of high efficiency mode in a PIN diode is derived assuming a rectangular current waveform. A quasi-static approximation is employed to derive a semianalytical solution for the voltage across a PIN diode in a third mode, where avalanching occurs during a major portion of a half cycle. Calculations for this mode indicate that the power increases proportionally to the magnitude of the drive current with a small decrease in efficiency relative to the ordinary TRAPATT mode. An analytical solution is also given for a PIN diode, where it is assumed that the ionization coefficient is a step function. It is shown that the step-ionization approximation permits one to draw possible patterns of avalanche region in the depletion layer as a function of time. A rule governing admissible patterns is derived and an example solution given for one admissible pattern. Preliminary experimental results on the high-efficiency oscillations are presented and discussed. Two different experimental circuits, which used channel-dropping filters to provide independent harmonic tuning, are described. Simpler circuits used to produce high-efficiency oscillations are discussed. Results of experiments using inexpensive Fairchild FD300 diodes are given.

Parker, D.↗

A Quick Visual Power-Supply Monitor

Power-supply voltages quickly monitored by circuit equipped with light-emitting-diode (LED) display. Operator looking at display quickly spots whether power output voltage is above, below, or within acceptable limits. Tricolor LED displays high, low, and intermediate output voltages.

Taylor, L. W.↗