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At least 73 records · Page 4

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Direct current ballast circuit for metal halide lamp

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Lutus, P.↗

Advanced Electrical Materials and Components Being Developed

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Schwarze, Gene E.↗

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Novel Quadratic High Gain Boost Converter With Adaptive Soft-Switching Scheme and Reduced Conduction Loss

In this article, an improved soft-switching quadratic boost converter is proposed. Instead of inserting an additional active clamp or auxiliary zero-voltage transition circuit at the switching node, the proposed topology connects the high-voltage switching node to the input diode node by replacing one of the input diodes with a low-rated switch. The proposed topology can attain soft-switching condition for all the switches and input diode turns- off under zero-current switching (ZCS). The operation of input-side switch not only aids zero-voltage switching (ZVS) turn- on for the main switch but also helps in reducing the conduction loss. Also, the input-side switch operates under ZCS turn- on and ZVS turn- off , making it a loss economical solution. An adaptive timing scheme for driving the input switch is proposed, which can ensure soft-switching condition under varying gain and load range. The detailed operational modes, analysis, and design considerations of the proposed topology are presented. A 250 W hardware prototype is built to validate the performance of the proposed converter operating at 100 kHz switching frequency. Results with adaptive soft-switching scheme shows that the converter is modulated to achieve its best efficiency condition under various system conditions. Furthermore, a peak efficiency of 96.1% at 155 W and efficiencies above 95.75% over a wide load range are achieved using all Si devices.

14 SOLAR ENERGY↗

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗

Changes in SSL Device Efficiency and Optical Performance Under Accelerated Aging Conditions

Lighting application efficiency (LAE) describes the efficient delivery of light from the light source to the lighted task and is viewed as a new frontier—increasing energy savings with solid-state lighting (SSL) technologies. The framework for LAE that is proposed by the U.S. Department of Energy (DOE) consists of four major elements: light source efficiency, optical delivery efficiency, spectral efficiency, and intensity effectiveness. This report focuses on a sampling of the available SSL products that can be broadly defined as having modified spectral output because the method of spectra modification has a significant impact on light source efficiency and long-term optical delivery and spectral efficiencies. This report focused on the changes in light source, optical delivery, and spectral efficiencies that occur during aging of SSL devices. An accelerated stress test (AST) regiment was developed for the devices under test (DUTs) examined in this report to provide insights into how the performance of SSL devices change with aging. The AST protocols demonstrate that the SSL products discussed in this report often reduce light source efficiency to achieve different spectral characteristics. In addition, aging of the optical components (e.g., lenses, solder masks) in SSL devices can produce increased light absorption, which negatively impacts optical delivery efficiency and light source efficiency. The modified spectral outputs of the selected SSL products discussed in this report come in a variety of form factors and achieve enhanced optical performance by using a variety of methods. All of the products examined in this study use mid-power light-emitting diodes (MP-LEDs), although the number, configuration, phosphor content, and light-emitting diode (LED) pump of the MP-LEDs differ. Product MS-1 is a 60-watt (W) replacement A19 lamp with a hermetically sealed glass globe, which contains an embedded optical filter to absorb green and yellow emissions, thereby creating a “sunlike” modified spectrum. Product MS-2 is a 60-W replacement A19 lamp with 30 MP-LEDs, and it uses a violet LED pump, along with green and red phosphor emissions, to produce a “healthy” spectrum. This spectrum omits blue emissions in an effort to reduce melanopic lux. Product MS-3 is an LED module consisting of 21 MP-LEDs that use a violet LED pump, along with blue, green, and red phosphors, to produce a “sunlike” spectrum. Products MS-4 and MS-5 are both 6-inch (in) downlights that use a manual switching mechanism so that users can select application-specific correlated color temperatures before installation. Products MS-4 and MS-5 both contain two LED primaries (2,700 Kelvin [K] and 5,000 K) for spectral tuning. Product MS-4 contains 12 MP-LEDs for each LED primary, and Product MS-5 contains 10 MP-LEDs for each LED primary. This report summarizes the overall findings from up to 8,000 hours (hrs) of AST on the lamp DUTs (Products MS-1 and MS-2); up to 5,000 hrs of AST on the LED light engine DUTs (Product MS-3); and up to 7,000 hrs of AST on the downlight DUTs (Products MS-4 and MS-5). The AST procedures used in this study included a room temperature operational life (RTOL) test, an operational life test conducted at 45 degrees Celsius (°C; 45OL) test, an operational life test conducted at 75°C (75OL), a wet high-temperature operational life test performed at 65°C and 90% relative humidity (6590), and a wet high-temperature operational life test performed at 75°C and 75% relative humidity (7575). The AST procedures used for Products MS-1 and MS-2 were RTOL, 45OL, and 6590. The AST procedures used for Products MS-3, MS-4, and MS-5 were RTOL, 75OL, and 7575. During the ASTs described herein, separate populations of each product (three DUTs in each population for Products MS-1, MS-2, MS-4, and MS-5; four DUTs in each population for Product MS-3) were subjected to power cycling of 1 hr on and 1 hr off. The key findings from this study include the following. Enhanced optical performance came at the cost of reduced light source efficiency for the lamps and light engines examined in this study. The optical filter used to produce a “sunlike” spectrum for Product MS-1 reduced light source efficiency by 26%, from 113 lumens per watt (lm/W) to 85 lm/W. Products MS-2 and MS-3 that used a violet-pumped LED to achieve “healthy” and “sunlike” enhanced optical performance, respectively, suffered the largest reduction in initial light source efficiency (49 lm/W for Product MS-2 and 68 lm/W for Products MS-3) perhaps because of the use of violet LED as the optical pump. Product MS-2 also had the poorest color fidelity because of undersaturation of blues and oversaturation of greens and yellows. Chromaticity maintenance of the products in this study was generally good, with parametric failure only occurring for one product at one AST condition (i.e., Product MS-3 at 7575). The chromaticity shift for Product MS-3 in 7575 test conditions resulted from reduced emissions of the broad green and red phosphors used to mimic sunlight in the 500–750 nanometer (nm) range. As a result of these phosphor emission losses, chromaticity shifted toward the more stable violet-pumped LED and blue phosphor. Although chromaticity maintenance was acceptable for most products tested, different chromaticity shift mechanisms were observed for temperature and humidity tests compared with temperature alone for Products MS-1, MS-2, and MS-3. For Product MS-1, a relative increase in green emissions was observed with humidity, which may indicate humidity-accelerated degradation of the optical filter at green wavelengths (optical delivery efficiency reduction) or degradation of the emitters in the red region (spectral efficiency reduction). The violet-pumped products (i.e., MS-2 and MS-3) exhibited different chromaticity shift behavior in the temperature-humidity environments, with Product MS-2 shifting generally yellow because of photo-induced oxidation of the plastic globe (i.e., a reduction of optical delivery efficiency) and Product MS-3 shifting toward violet and blue emitters because of faster loss of emission from green and red phosphors (i.e., a reduction in spectral efficiency). Because of an initial drop in power consumption, the light source efficiency of downlights (Products MS-4 and MS-5) increased at RTOL throughout the test duration. The light source efficiency initially increased during 75OL until a decay in luminous flux maintenance (LFM) dominated light source efficiency, whereas the light source efficiency decreased for the entire 7575 test duration. It was found that increasing the ambient environment of an SSL device from 25°C to 75°C decreases the LFM by 2.7 to 5.5, depending on design of the SSL device. Adding humidity to the system (75OL to 7575) was found to decrease LFM by another factor of approximately 3.0. A common location of failure was identified for the downlights (Products MS-4 and MS-5) operated in the 7575 environment. This failure abruptly occurred between 3,000 to 5,000 hrs of testing on the film capacitor of the electromagnetic interference (EMI) filter near the diode bridge for 11 of the 12 downlights. It is likely that this failure was caused by a combination of the high electrical voltage across the capacitor, the location of the capacitor near the heat sources (e.g., transformers, diode bridges, power resistors), and the high stress environment of 7575. Longer test times are needed to fully understand the LFM, luminous efficacy changes, and chromaticity shifts for some of the products. Because of the high reliability, light source efficiency, and spectral tuning capabilities of LEDs, the expectations of LAE for SSL products are greatly increased over traditional lighting products. The data gathered in this report begin to provide an understanding of the tradeoffs that current SSL products undergo when optimizing the different efficiency elements of LAE. As discussed in this report, the findings from the tests conducted show that the optimization of spectral efficiency can come at the cost of initial light source efficiency. Furthermore, the introduction of violet LEDs can promote long-term optical delivery efficiency degradation, and the introduction of optical filters or new phosphors can lead to unwanted spectral efficiency changes because the ratio of phosphor emitters changes with aging. The data presented in this report also identified a common failure location in 6-in downlights. The results regarding long-term behavior of the modified spectra devices studied provide valuable information about changes to the light source, spectral, and optical delivery efficiencies as the devices age. This information can be used to improve future SSL designs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Characterization of Self-Magnetic Pinch (SMP) Radiographic Diode Performance on RITS-6 at Sandia National Laboratories

The goals of an electron beam-driven radiographic source are the focusing of high current at high voltage to a minimal spot size with excellent shot-to-shot reproducibility. The Self-Magnetic Pinch (SMP) diode makes use of such an intense electron beam impinging on a high-atomic weight (tantalum) converter, a counter-streaming ion beam to help minimize the spot size, and operation in a magnetic field-free diode region which further encourages small spot size. Through a series of diode development experiments, output voltages up to 12.5 MV and output currents up to 225 kA have been characterized, with resulting spot sizes below ~ few mm. Scaling studies with parameter variation, such as diode aspect ratio and anode-cathode (A-K) gap variation, give systematic validation to what has heretofore been noted anecdotally by other research groups. While the lack of an imbedded magnetic field helps minimize the SMP spot size, a secondary result may be the generation of beam instabilities which can terminate the radiation pulse. There is anecdotal evidence that in-situ DC heating of the diode region can help stabilize the beam pinch. Clear experimental evidence exists that DC heating/RF cleaning results in better control over the counter-streaming ion population. Expanded use of spatial dose-rate detection is shown to yield new insights into electron beam dynamics in the SMP diode. An attendant study of the SMP diode as a load for an Inductive Voltage Adder (IVA) driver leads to insights into the behavior of the IVA-SMP diode configuration, viewed as a total system, and yields constraints on the overall impedance behavior of the SMP diode load.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.

42 ENGINEERING↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Regulated high efficiency, lightweight capacitor-diode multiplier dc to dc converter

A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.

Harrigill, W. T., Jr.↗

Forward voltage short-pulse technique for measuring high power laser array junction temperature

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Meadows, Byron L.↗

High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

Electric Propulsion↗

Thermionic triode generates ac power

Electrostatic grid controls conduction cycle of thermionic diode to convert low dc output voltages to high ac power without undesirable power loss. An ac voltage applied to the grid of this new thermionic triode enables it to convert heat directly into high voltage electrical power.

Kniazzeh, A. G. F.↗

Microfluidic Devices for Chemical and Biochemical Analysis in Microgravity

One often touted benefit of "Lab-on-a-Chip" devices is their potential for use in remote environments. The ultimate remote environment is outer space, and NASA has multiple needs in the area of analytical sensing capability in such an environment. In particular, we are interested in integrating microfluidic devices with NASA bioreactor systems. In such an integrated system, the microfluidic device will serve as a biosensor and be used for both feedback control and for detecting various bioproducts produced by cells cultured in the NASA bioreactors. As a first step in demonstrating the ability of microfluidic devices to operate under the extreme environmental conditions found in outer space, we constructed a portable, battery operated platform for testing under reduced gravity conditions on a NASA KC-135 reduced gravity research aircraft, (AKA "the vomit comet"). The test platform consisted of a microchip, two 0-8kV high voltage power supplies, a high voltage switch, a solid-state diode-pumped green laser, a channel photomultiplier, and an inertial mass measurement unit, all under the control of a laptop computer and powered by 10 D-cell alkaline batteries. Over the course of 4 KC-135 flights, 1817 fast electrophoretic separations of 4 amino acids and/or proteins were performed in a variety of gravitational environments including zero-G, Martian-G, lunar-G, and 2-G. Results from these experiments will be presented and discussed.

Roman, Gregory T.↗