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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
DOE OSTI2024

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the original compressive GeSn layer to nearly fully relaxed state GeSn ribbons, the room-temperature spectral response of the photodetector is further extended to 3.2 μm, which can cover the entire SWIR range. Compared with the as-grown GeSn reference photodetectors, the fabricated GeSn ribbon photodetectors have a fivefold improvement in the light-to-dark current ratio, which can improve the detectivity for high-performance photodetection. The transient performance of a GeSn ribbon photodetector is investigated with a rise time of about 40 μs, which exceeds the response time of most GeSn (Ge)-related devices. In addition, this transfer process can be applied on various substrates, making it a versatile technology that can be used for various applications ranging from optoelectronics to large-area electronics. These results provide insightful guidance for the development of low-cost and high-speed SWIR photodetectors based on Sn-containing group IV low-dimensional structures.

42 ENGINEERING↗
DOE OSTI2025

Revealing atomic-scale switching pathways in van der Waals ferroelectrics

Two-dimensional (2D) van der Waals (vdW) materials hold the potential for ultrascaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atomic scale. However, the inherently weak vdW interactions enable facile sliding between layers, introducing complexities beyond those encountered in conventional ferroelectric materials and presenting substantial challenges in uncovering intricate switching pathways. Here, we combine atomic-resolution imaging under in situ electrical biasing conditions with first-principles calculations to unravel the atomic-scale switching mechanisms in SnSe, a vdW group IV monochalcogenide. Our results uncover the coexistence of a consecutive 90° switching pathway and a direct 180° switching pathway from antiferroelectric (AFE) to FE order in this vdW system. Atomic-scale investigations and strain analysis reveal that the switching processes simultaneously induce interlayer sliding and compressive strain, while the lattice remains coherent despite the presence of multidomain structures. These findings elucidate vdW ferroelectric switching dynamics at atomic scale and lay the foundation for the rational design of 2D ferroelectric nanodevices.

Li, Xinyan [Rice University, Houston, TX (United S↗
DOE OSTI2024

A Review of Nanocarbon-Based Anode Materials for Lithium-Ion Batteries

Renewable and non-renewable energy harvesting and its storage are important components of our everyday economic processes. Lithium-ion batteries (LIBs), with their rechargeable features, high open-circuit voltage, and potential large energy capacities, are one of the ideal alternatives for addressing that endeavor. Despite their widespread use, improving LIBs’ performance, such as increasing energy density demand, stability, and safety, remains a significant problem. The anode is an important component in LIBs and determines battery performance. To achieve high-performance batteries, anode subsystems must have a high capacity for ion intercalation/adsorption, high efficiency during charging and discharging operations, minimal reactivity to the electrolyte, excellent cyclability, and non-toxic operation. Group IV elements (Si, Ge, and Sn), transition-metal oxides, nitrides, sulfides, and transition-metal carbonates have all been tested as LIB anode materials. However, these materials have low rate capability due to weak conductivity, dismal cyclability, and fast capacity fading owing to large volume expansion and severe electrode collapse during the cycle operations. Contrarily, carbon nanostructures (1D, 2D, and 3D) have the potential to be employed as anode materials for LIBs due to their large buffer space and Li-ion conductivity. However, their capacity is limited. Blending these two material types to create a conductive and flexible carbon supporting nanocomposite framework as an anode material for LIBs is regarded as one of the most beneficial techniques for improving stability, conductivity, and capacity. This review begins with a quick overview of LIB operations and performance measurement indexes. It then examines the recently reported synthesis methods of carbon-based nanostructured materials and the effects of their properties on high-performance anode materials for LIBs. These include composites made of 1D, 2D, and 3D nanocarbon structures and much higher Li storage-capacity nanostructured compounds (metals, transitional metal oxides, transition-metal sulfides, and other inorganic materials). The strategies employed to improve anode performance by leveraging the intrinsic features of individual constituents and their structural designs are examined. The review concludes with a summary and an outlook for future advancements in this research field.

25 ENERGY STORAGE↗
DOE OSTI2026

Tin–Lead Liquid Metal Alloy Source for Focused Ion Beams

Focused Ion Beam (FIB) systems are increasingly utilized in nanotechnology for nanostructuring, surface modification, doping, and rapid prototyping. Recently, their potential for quantum applications has been explored, leveraging FIB’s direct-write capabilities for in situ single ion implantation, which is crucial for fabricating single photon emitters. Color centers in diamond can function as qubits and are of particular interest due to their capacity to store and transmit quantum information. While Group-IV color centers exhibit high brightness, they require low temperatures to retain coherence. However, lead-vacancy in diamond (PbV) operates at the higher end (4 K) of this temperature spectrum due to larger ground-state splitting, making them particularly interesting. In this context, our study presents results for lead (Pb)-containing alloys with eutectic points below 600 °C and results on using tantalum (Ta) and titanium (Ti) as emitter materials for a Pb liquid metal alloy ion source. We show that a standard FIB system is able to resolve the different Pb isotopes and achieve nanoscale spot sizes, as required for quantum information science applications.

color center↗
NASA NTRS1975

Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

Buckley, D. H.↗
NASA NTRS1977

Exercise, dietary obesity, and growth in the rat

Experiments were conducted on weanling male rats 35 days old and weighing about 100 g to determine how endurance-type exercise and high-fat diet administered during growth influence body mass and composition. The animals were divided into four weight-matched groups of 25 animals each: group I - high-fat diet, exercised; group II - chow, exercised; group III - high-fat diet, sedentary; and group IV - chow, sedentary. During growth, masses of water, muscle and skin increased as functions of body size; bone as a function of age; and heart, liver, gut, testes, and CNS were affected by combinations of size, age, activity, and diet. Major conclusions are that growth in body size is expressed more precisely with fat-free body mass (FFBM), that late rectilinear growth is probably attributable to fat accretion, and that the observed influences on FFBM of exercise and high-fat diet are obtained only if the regimen is started at or before age 5-7 weeks.

Pitts, G. C.↗
NASA NTRS1977

High-temperature condensates in carbonaceous chondrites

Equilibrium thermodynamic calculations of the sequence of condensation of minerals from a cooling gas of solar composition play an important role in explaining the mineralogy and trace element content of different types of inclusions in carbonaceous chondrites. Group IV B iron meteorites and enstatite chondrites may also be direct condensates from the solar nebula. Condensation theory provides a framework within which chemical fractionations between different classes of chondrites may be understood.

Grossman, L.↗
NASA NTRS1979

Evaluation of particle transport for the P80-1 spacecraft

Charged and neutral particle transport from an 8-cm mercury ion thruster to the surfaces of the P80-1 spacecraft, the Teal Ruby sensor and the ECOM-501 sensor was examined. Evaluation of particle transport modes utilized both laboratory measurements and analysis. Line-of-sight particle transport considered deposition of Group II (high energy-high angle mercury charge exchange) ions and neutral mercury on solar array surfaces. Nonline-of-sight transport modes studied were recirculation/reinterception of mercury ions in magnetic fields and refraction of low energy mercury charge exchange (Group IV) ions by local electric fields.

Sellen, J. M., Jr.↗
NASA NTRS1980

Float zone experiments

The objectives of this work are: to determine if surface tension-driven convection in float zone experiments may be controlled by means of surface films; and if convection can be controlled, determine whether homogeneous solute distributions will be achieved in float zone solidification and whether accurate measurements of liquid diffusion coefficients may be obtained from float zone solidification experiments. Sn was chosen as a model material because it is a group IV element, chemically similar to Si and Ge and its low melting point and low vapor pressure allow Auger spectroscopy to be employed with liquid samples.

Verhoeven, J.↗
NASA NTRS1986

Theoretical electric dipole moments of SiH, GeH and SnH

Accurate theoretical dipole moments have been computed for the X2Pi ground states of Si(-)H(+) (0.118 D), Ge(+)H(-) (0.085 D), and Sn(+)H(-) (0.357 D). The trend down the periodic table is regular and follows that expected from the electronegativities of the group IV atoms. The dipole moment of 1.24 + or - 0.1 D for GeH recently derived by Brown, Evenson and Sears (1985) from the relative intensities of electric and magnetic dipole transitions in the 10-micron spectrum of the X2Pi state is seriously questioned.

Pettersson, L. G. M.↗
NASA NTRS1989

Research In Thermoelectric Materials

Report reviews current research in thermoelectric materials with view towards development of materials of greater energy-conversion efficiency. Emphasis on effort to understand and manipulate microstructure to increase thermoelectric figure of merit, Z. Thermoelectric properties of three broad categories of materials discussed. First category includes alloys of group IV elements like silicon and germanium. Second category is rare-earth chalcogenides. Third category includes narrow-band semiconductors, especially boron carbides.

Wood, Charles↗
NASA NTRS1992

Theoretical investigation of gas-surface interactions

The investigation into the appearance of intruder states from the negative continuum when some of the two-electron integrals were omitted was completed. The work shows that, provided all integrals involving core contracted functions in an atomic general contraction are included, or that the core functions are radially localized, meaningful results are obtained and intruder states do not appear. In the area of program development, the Dirac-Hartree-Fock (DHF) program for closed-shell polyatomic molecules was extended to permit Kramers-restricted open-shell DHF calculations with one electron in an open shell or one hole in a closed shell, or state-averaged DHF calculations over several particle or hole doublet states. One application of the open-shell code was to the KO molecule. Another major area of program development is the transformation of integrals from the scalar basis in which they are generated to the 2-spinor basis employed in parts of the DHF program, and hence to supermatrix form. Particularly concerning the omission of small component integrals, and with increase in availability of disk space, it is now possible to consider transforming the integrals. The use of ordered integrals, either in the scalar basis or in the 2-spinor basis, would considerably speed up the construction of the Fock matrix, and even more so if supermatrices were constructed. A considerable amount of effort was spent on analyzing the integral ordering and tranformation for the DHF program. The work of assessing the reliability of the relativistic effective core potentials (RECPs) was continued with calculation of the group IV monoxides. The perturbation of the metal atom provided by oxygen is expected to be larger than that provided by hydrogen and thus provide a better test of the qualification of the RECPs. Calculations on some platinum hydrides were carried out at nonrelativistic (NR), perturbation theory (PT) and DHF levels. Reprints of four papers describing this work are included.

Dyall, Kenneth G.↗
NASA NTRS1992

All-electron molecular Dirac-Hartree-Fock calculations - Properties of the XH4 and XH2 molecules and the reaction energy XH4 yields XH2 + H2, X = Si, Ge, Sn, Pb

Relativistic corrections to a number of properties of the Group IV hydrides are calculated using the Dirac-Hartree-Fock method. The use of first-order perturbation theory is sufficient to obtain relativistic corrections for Ge, but the effects of spin-orbit interaction and other higher-order effects begin to show for Sn and become important for Pb. The energy of the reaction XH4 yields XH2 + H2 (X = Si, Ge, Sn, and Pb) is also calculated. The results are compared with relativistic effective core potential calculations, first-order perturbation theory calculations, and limited experimental data.

Dyall, Kenneth G.↗
NASA NTRS1986

Theoretical Electric Dipole Moments of SiH, GeH and SnH

Accurate theoretical dipole moments (mu(sub c) have been computed for the X(exp 2)Pi ground states of Si(-)H(+)(0.118 D), Ge(+)H(-)(0.085 D) and Sn(+)H(-)(0.357 D). The trend down the periodic table is regular and follows that expected from the electronegativities of the group IV atoms. The dipole moment of 1.24 +/- 0.1 D for GeH recently derived by Brown, Evenson and Sears from the relative intensities of electric and magnetic dipole transitions in the 10 microns spectrum of the X(exp 2)Pi state is seriously questioned.

Pettersson, Lars G. M.↗
NASA NTRS2000

Method For Growth of Crystal Surfaces and Growth of Heteroepitaxial Single Crystal Films Thereon

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon is discussed. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Powell, J. Anthony↗
NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

GaN AlN GaN/AlN↗
NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures

The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN super lattices (digital alloys); and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, it should be possible to tailor the band gap of the composite to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers could enable an extension of direct band-gap material towards the visible.

microscopy GaN AlN semiconductor SiC↗