Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GeTe”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe 3−𝑥 ⁢GeTe 2

Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet Fe 3−𝑥 ⁢GeTe 2 (FGT) reveal three distinct contributions to the MR: a linear negative component, a contribution from closed Fermi-surface orbits, and an enhancement proportional to the square of the applied magnetic field which is linked to a noncoplanar spin arrangement. Contrary to earlier studies on FGT, by accounting for the field dependence of the anomalous Hall effect, we find that the ordinary Hall coefficient decreases markedly below 80 K, indicating a significant change in character of the electrons and holes on the Fermi-surface at this temperature. The resulting altered ground state eventually causes the Hall coefficient to reverse sign at 35 K. Our Hall data support the proposal that Kondo-lattice behavior develops in this 𝑑-electron material below 80 K. Additional evidence comes from the negative linear component of the MR, which arises from electron-magnon scattering with an atypical temperature dependence attributable to the onset of Kondo screening.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Dichotomy of flat bands in the van der Waals ferromagnet Fe 5 ⁢GeTe 2

Quantum materials with bands of narrow bandwidth near the Fermi level represent a promising platform for exploring a diverse range of fascinating physical phenomena, as the high density of states within the small energy window often enables the emergence of many-body physics. On one hand, flat bands can arise from strong Coulomb interactions that localize atomic orbitals. On the other hand, quantum destructive interference can quench the electronic kinetic energy. Although both have a narrow bandwidth, the two types of flat bands should exhibit very distinct spectral properties arising from their distinctive origins. So far, the two types of flat bands have only been realized in very different material settings and chemical environments, preventing a direct comparison. Here, in this study, we report the observation of the two types of flat bands within the same material system—an above-room-temperature van der Waals ferromagnet, Fe 5−x GeTe 2 , distinguishable by a switchable iron site order. The contrasting nature of the flat bands is also identified by the remarkably distinctive temperature evolution of the spectral features, indicating that one arises from electron correlations in the Fe(1) site-disordered phase, while the other geometrical frustration in the Fe(1) site-ordered phase. Our results therefore provide a direct juxtaposition of the distinct formation mechanism of flat bands in quantum materials and an avenue for understanding the distinctive roles flat bands play in the presence of magnetism, topology, and lattice geometrical frustration, utilizing sublattice ordering as a key control parameter.

Wu, Han [Rice Univ., Houston, TX (United States)] ↗
DOE OSTI2022

Room-temperature skyrmion lattice in a layered magnet (Fe 0.5 Co 0.5 ) 5 GeTe 2

Novel magnetic ground states have been stabilized in two-dimensional (2D) magnets such as skyrmions, with the potential next-generation information technology. Here, we report the experimental observation of a Néel-type skyrmion lattice at room temperature in a single-phase, layered 2D magnet, specifically a 50% Co-doped Fe 5 GeTe 2 (FCGT) system. The thickness-dependent magnetic domain size follows Kittel's law. The static spin textures and spin dynamics in FCGT nanoflakes were studied by Lorentz electron microscopy, variable-temperature magnetic force microscopy, micromagnetic simulations, and magnetotransport measurements. Current-induced skyrmion lattice motion was observed at room temperature, with a threshold current density, j th = 1 × 10 6 A/cm 2 . This discovery of a skyrmion lattice at room temperature in a noncentrosymmetric material opens the way for layered device applications and provides an ideal platform for studies of topological and quantum effects in 2D.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

From vortex to bubble: Unraveling formation of merons and skyrmions in van der Waals ferromagnet $\textrm{Fe}_{5-\textrm{x}}\textrm{GeTe}_2$

Magnetic topology, such as merons and skyrmions, is important from the perspective of both fundamental physics and next-generation spintronic devices. We observe/demonstrate the coexistence of merons and skyrmions in the van der Waals ferromagnet Fe 5-x GeTe 2 . Merons remain stable across a wide temperature range, from 100 K to 290 K, whereas skyrmions are only present within a narrower range from 100 K to approximately 170 K. Our finding reveals that the formation of merons or skyrmions is governed by the local magnetocrystalline anisotropy. Furthermore, the spatial variations in local magnetic anisotropy are attributed to subtle fluctuations in Fe content.

2D materials↗
DOE OSTI2022

Exchange bias and interface-related effects in two-dimensional van der Waals magnetic heterostructures: Open questions and perspectives

The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe 3 GeTe 2 ) to a bilayer composed of two different magnetic vdW materials (e.g., Fe 3 GeTe 2 /CrCl 3 , Fe 3 GeTe 2 /FePS 3 , Fe 3 GeTe 2 /MnPS 3 , Fe 3 GeTe 2 /CrSe, Fe 3 GeTe 2 /CrOCl, Fe 3 GeTe 2 /CoPc, Fe 5 GeTe 2 /FePS 3 ), to bilayers of two different vdW defective magnets (e.g., VSe 2 /MoS 2 ), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS 2 ). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. Here, we present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.

2D magnets↗
DOE OSTI2026

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗
DOE OSTI2023

Facile integration of giant exchange bias in Fe 5 Ge Te 2 / oxide heterostructures by atomic layer deposition

Exchange bias arises from the interfacial exchange coupling in ferromagnet-antiferromagnet bilayers and manifests as a horizontal shift of the magnetic hysteresis loop, constituting a critical component underpinning a broad range of magnetoresistive logic and memory devices. The facile implementation of exchange bias in van der Waals (vdW) magnets would be a key step towards practical devices for emerging vdW spintronics. Here, in this paper, we report an easy approach to establishing strong exchange bias in the vdW magnet Fe 5 GeTe 2 by a single-step process—atomic layer deposition (ALD) of oxides on Fe 5 GeTe 2 . We successfully created exchange bias of 300–1500 Oe in Fe 5 GeTe 2 /Al 2 O 3 , Fe 5 GeTe 2 /ZnO, and Fe 5 GeTe 2 /V 2 O 5 heterostructures, at 130 K. Control experiments showed that increasing the oxidant pulse duration in each ALD cycle or utilizing the stronger oxidant O 3 can enhance the exchange bias strength, revealing the key role of the ALD oxidants. Our systematic work elucidates the essential role of ALD-enabled oxidization of Fe 5 GeTe 2 in the formation of exchange bias, and establishes ALD of oxides as a facile, controllable, and generally effective approach to creating giant exchange bias in vdW magnets, representing an integral advance towards practical vdW spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

First-principles study and experimental characterization of metal incorporation in germanium telluride

Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Spectral evidence for local-moment ferromagnetism in the van der Waals metals $\mathrm{Fe_3GaTe_2}$ and $\mathrm{Fe_3GeTe_2}$

Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and its tunability towards device applications. The isostructural Fe 3 GeTe 2 and Fe 3 GaTe 2 are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T C ) of 210 and 360 K, respectively. In this report by using angle-resolved photoemission spectroscopy and density functional theory, we systematically compare the electronic structures of the two compounds. Qualitative similarities in the Fermi surface can be found between the two compounds, with expanded hole pockets in Fe 3 GaTe 2 suggesting additional hole carriers compared to Fe 3 GeTe 2 . Interestingly, we observe almost no band shift in Fe 3 GaTe 2 across its T C of 360 K, compared to a small shift in Fe 3 GeTe 2 across its T C of 210 K. The weak temperature-dependent evolution strongly deviates from the expectations of an itinerant Stoner mechanism. Our results suggest that itinerant electrons have minimal contributions to the enhancement of T C in Fe 3 GaTe 2 compared to Fe 3 GeTe 2 , and that the nature of ferromagnetism in these Fe-based vdW ferromagnets must be understood with considerations of the electron correlations.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Revealing the structure and electronic characteristics of Te-rich threshold switching materials for high-density integration

Ovonic threshold switching (OTS) selectors play an important role in the integration of advanced three-dimensional memory. Selectors based on tellurium (Te)-containing materials exhibit significant promise due to their low threshold voltages and superior consistency. Here we have theoretically studied the structure and electronic properties of a typical OTS material, amorphous GeTe 6 , to explore the switching mechanisms using ab initio molecular dynamics simulations. The results indicate that Ge atoms tend to bond with Te atoms, forming stable chemical bonds. The Te-centered clusters are predominantly in the form of distorted octahedrons, while the Ge-centered clusters are in the form of both octahedrons and tetrahedrons. Notably, the proportion of tetrahedrons within the 4-coordinated Ge-centered clusters reaches an impressive 66.9%. These tetrahedrons are randomly dispersed throughout the simulated cell, leading to a stable amorphous configuration. The mid-gap state observed in the mobility bandgap originates from the atomic chain composed of both over-coordinated Ge and Te atoms. It is the inherent stability of the chemical environment within amorphous GeTe 6 that enables it to maintain its amorphous phase under a repeated threshold voltage, a characteristic that distinguishes it from non-OTS materials, such as amorphous tellurium. Furthermore, our findings provide an in-depth understanding of the structure and electronic characteristics of amorphous GeTe 6 , which can promote the design and application of the Te-rich threshold switching materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Theory of ab initio downfolding with arbitrary-range electron-phonon coupling

Ab initio downfolding describes the electronic structure of materials within a low-energy subspace, often around the Fermi level. Typically starting from mean-field calculations, this framework allows for the calculation of one- and two-electron interactions, and the parametrization of a many-body Hamiltonian representing the active space of interest. The subsequent solution of such Hamiltonians can provide insights into the physics of strongly correlated materials. While phonons can substantially screen electron-electron interactions, electron-phonon coupling has been commonly ignored within ab initio downfolding, and when considered, this is done only for short-range coupling. Here we propose a theory of ab initio downfolding that accounts for short- and long-range electron-phonon coupling on equal footing. Our practical computational implementation is readily compatible with current downfolding approaches. We apply our approach to polar materials MgO and GeTe, and we reveal the importance of both short-range and long-range electron-phonon coupling in determining the magnitude of electron-electron interactions. Our results show that in the static limit, phonons reduce the on-site repulsion between electrons by 40% for MgO and by 79% for GeTe. Our framework also predicts that overall attractive nearest-neighbor interactions arise between electrons in GeTe, consistent with superconductivity in this material.

Tubman, Norm M↗
DOE OSTI2020

Materials Data on GeTe7As4 by Materials Project

As2Te3(GeTe)As2Te3 is MAX Phase-like structured and crystallizes in the trigonal P-3m1 space group. The structure is two-dimensional and consists of one As2Te3 sheet oriented in the (0, 0, 1) direction and one As2Te3(GeTe) sheet oriented in the (0, 0, 1) direction. In the As2Te3 sheet, As1+ is bonded to six Te+1.14- atoms to form a mixture of edge and corner-sharing AsTe6 octahedra. The corner-sharing octahedral tilt angles are 0°. There are three shorter (2.86 Å) and three longer (3.01 Å) As–Te bond lengths. There are two inequivalent Te+1.14- sites. In the first Te+1.14- site, Te+1.14- is bonded in a 3-coordinate geometry to three equivalent As1+ atoms. In the second Te+1.14- site, Te+1.14- is bonded to six equivalent As1+ atoms to form edge-sharing TeAs6 octahedra. In the As2Te3(GeTe) sheet, Ge4+ is bonded to six equivalent Te+1.14- atoms to form GeTe6 octahedra that share corners with six equivalent AsTe6 octahedra, edges with six equivalent GeTe6 octahedra, and edges with six equivalent AsTe6 octahedra. The corner-sharing octahedral tilt angles are 1°. All Ge–Te bond lengths are 2.97 Å. As1+ is bonded to six Te+1.14- atoms to form AsTe6 octahedra that share corners with three equivalent GeTe6 octahedra, edges with three equivalent GeTe6 octahedra, and edges with six equivalent AsTe6 octahedra. The corner-sharing octahedral tilt angles are 1°. There are three shorter (2.85 Å) and three longer (3.03 Å) As–Te bond lengths. There are two inequivalent Te+1.14- sites. In the first Te+1.14- site, Te+1.14- is bonded in a 3-coordinate geometry to three equivalent As1+ atoms. In the second Te+1.14- site, Te+1.14- is bonded to three equivalent Ge4+ and three equivalent As1+ atoms to form a mixture of edge and corner-sharing TeGe3As3 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗