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NASA NTRS1992

All-electron molecular Dirac-Hartree-Fock calculations - Properties of the XH4 and XH2 molecules and the reaction energy XH4 yields XH2 + H2, X = Si, Ge, Sn, Pb

Relativistic corrections to a number of properties of the Group IV hydrides are calculated using the Dirac-Hartree-Fock method. The use of first-order perturbation theory is sufficient to obtain relativistic corrections for Ge, but the effects of spin-orbit interaction and other higher-order effects begin to show for Sn and become important for Pb. The energy of the reaction XH4 yields XH2 + H2 (X = Si, Ge, Sn, and Pb) is also calculated. The results are compared with relativistic effective core potential calculations, first-order perturbation theory calculations, and limited experimental data.

Dyall, Kenneth G.↗

NASA NTRS1992

Effects of bleed air extraction of thrust levels on the F404-GE-400 turbofan engine

A ground test was performed to determine the effects of compressor bleed flow extraction on the performance of F404-GE-400 afterburning turbofan engines. The two engines were installed in the F/A-18 High Alpha Research Vehicle at the NASA Dryden Flight Research Facility. A specialized bleed ducting system was installed onto the aircraft to control and measure engine bleed airflow while the aircraft was tied down to a thrust measuring stand. The test was conducted on each engine and at various power settings. The bleed air extraction levels analyzed included flow rates above the manufacturer's maximum specification limit. The measured relationship between thrust and bleed flow extraction was shown to be essentially linear at all power settings with an increase in bleed flow causing a corresponding decrease in thrust. A comparison with the F404-GE-400 steady-state engine simulation showed the estimation to be within +/- 1 percent of measured thrust losses for large increases is bleed flow rate.

Yuhas, Andrew J.↗

NASA NTRS1992

Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

Pike, W. T.↗

NASA NTRS1983

Performance of Ge:Ga far infrared detectors

A systematic study was carried out of the properties of Ge:Ga photoconductive infrared detectors for wavelengths approx. 100 micron. The detectors studied were made from Ge:Ga with acceptor concentration N sub A approx. 2 x 10 exp 14/cu cm with both low compensation (10 exp -2) and ultralow compensation (10 exp -4). Noise measurements have been made as a function of background photon rate, bias voltage, and chopping frequency. Detective quantum efficiencies approaching unity have been observed over a side range of experimental parameters. Photocurrent has been measured as a function of voltage and temperature. Hall mobility and lifetime have been measured to determine their effect on detector properties. A small potential drop has been observed in nominally ohmic contacts produced by implantation of B ions.

Hueschen, M. R.↗

NASA NTRS1994

Pourous Si(x)Ge(1-x) Layers Within Single Crystals Of Si

Layers of porous Si(x)Ge(1-x) buried within single crystals of Si formed by epitaxial growth of Si/Si(x)Ge(1-x)/Si structures followed by etching in solutions of HF:HNO3:H2O. Electroluminescence from these layers utilized in novel optoelectronic devices.

Fathauer, Robert W.↗

NASA NTRS1992

Lean burn combustor technology at GE Aircraft Engines

This presentation summarizes progress to date at GE Aircraft Engines in demonstration of a lean combustion system for the High Speed Civil Transport (HSCT). These efforts were supported primarily by NASA contracts, with the exception of initial size and weight estimates and development of advanced diagnostics which were conducted under GE Independent Research and Development projects. Key accomplishments to date are summarized below.

Dodds, Willard J.↗

NASA NTRS1995

The Effect of Altitude Conditions on the Particle Emissions of a J85-GE-5L Turbojet Engine

Particles from a J85-GE-5L turbojet engine were measured over a range of engine speeds at simulated altitude conditions ranging from near sea level to 45,000 ft and at flight Mach numbers of 0.5 and 0.8. Samples were collected from the engine by using a specially designed probe positioned several inches behind the exhaust nozzle. A differential mobility particle sizing system was used to determine particle size. Particle data measured at near sea-level conditions were compared with Navy Aircraft Environmental Support Office (AESO) particle data taken from a GE-J85-4A engine at a sea-level static condition. Particle data from the J85 engine were also compared with particle data from a J85 combustor at three different simulated altitudes.

Rickey, June Elizabeth↗

NASA NTRS1995

Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.

Rolin, T. D.↗

NASA NTRS1999

Reducing and Inducing Convection in Ge-Si Melts with Static Magnetic Field

Results of a study of the effectiveness of using static magnetic fields to reduce convection in Ge-Si melts will be presented. Lenz's law causes a retardation of convection when a static magnetic field is applied to an electrically conducting liquid. However, during the solidification of a solid-solution system such as Ge-Si, the interface is neither isothermal nor isoconcentrational. The variation of temperature and chemical composition along the interface causes thermoelectric currents to be generated within the solidifying material (and the container if it is electrically conductive). These currents, in the presence of a magnetic field, can cause movement (stirring, convection) in the melt which can exceed convection induced by normal thermosolutal mechanisms. Crystals have been grown by both the Bridgman and floating-zone methods. Clear evidence for the existence of this thermoelectromagnetic convection, especially in the case of Si floating-zone growth, will be presented.

Szofran, Frank R.↗

NASA NTRS2002

Wetting Angles and Surface Tension of Ge(1-x)Si(x) Melts on Different Substrate Materials

The wetting angles and the surface tension of Ge(1-x)Si(x) melts (0.02 less than x less than 0.13) have been measured on various substrate materials using the sessile drop technique. Fused quartz, sapphire, SiC, glassy carbon, pBN, AIN, and Si3N4 have been used as substrates. The highest and most stable wetting angles were found for pBN substrates with 164 +/- 8 deg., either under forming gas with an additional carbon getter in the system or under active vacuum. The surface tension measurements resulted in a value of +2.2 x 10(exp -3) N/m.at%Si for the concentration dependence delta(gamma)/(delta)C. For the composition range measured, the temperature dependence (delt)gamma/(delta)T showed values similar to those of pure Ge, on average -0.07 x 10(exp -3) N/mK.

Croell, A.↗

NASA NTRS1997

Electrochemical Properties of LaNi (sub 5-x) Ge (sub x) Alloys in Ni-MH Batteries

Electrochemical studies were performed on LaNi (sub 5-x) Ge (sub x) metal hydride alloys with 0 <= x <= 0.5. We carried out single-electrode studies to understand the effects of the Ge substituent on the hydrogen absorption characteristics, the electrochemical capacity, and the electrochemical kinetics of hydrogen absorption and desorption.

hydrogen absorption electrochemical capacity elect↗

NASA NTRS1996

Growth and Some Properties of Cr(sub 11)Ge(sub 19)

Cr(sub 11)Ge(sub 19) belongs to a large family of materials known as the Nowtny chimney-ladder compounds, some of which were recently proposed as advanced thermoelectric materials because of their low thermal conductivity related to their relatively complex crystal structure. In order to assess the potential of the compound Cr(sub 11)Ge(sub 19) for thermoelectric applications, we grew large single crystals of this peritectic compound by a vertical gradient freeze technique and measured the thermoelectric properties of the crystals.

Nowotny chimney-ladder compounds thermoelectric ma↗

NASA NTRS1996

Electrochemical Evaluation of LaNi(sub 5-x)Ge(sub x) Metal Hydride Alloys

We report a detailed evaluation of Ge-substituted LaNi(sub 5) for electrochemical application as a negative electrode inalkaline rechargeable cells. Alloys with small substitutions of Ge for Ni show operating pressures, chargeability, cyclic lifetime, and kinetics for hydrogen absorption and desorption all superior to those found in many substituted LaNi(sub 5) alloys.

alkaline cells recharchable cells rechargeable bat↗

NASA NTRS1993

Ru(sub 2)Ge(sub 3): Crystal Growth and Come Properties

Large samples of Ru(sub 2)Ge(sub 3) were grown from Ge-rich off-stoichiometric melts at a temperature close to 1460 C by a vertical gradient freeze method in graphite and glassy carbon crucibles.

off-stoichiometric melt twinning crack formation h↗

NASA NTRS1993

Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector

A photoresponse model has been developed for the Si_(1-x)Ge_x/Si heterojunction internalphotoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than theFermi energy. A Si_(0.7)Ge_(0.3)/Si HIP detector with a cutoff wavelength of 23 micrometers andan emission coefficient of 0.4 eV^(-1) has been demonstrated. The model agrees with the measureddetector response at lambda greater than 8 micrometers. The potential barrier determined by themodel is in close agreement (difference similar to 4 meV) with the potential barrier determined by theRichardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottkydetectors.

Lin, T.↗

NASA NTRS2008

NASA / GE Aviation Collaborative Partnership Research in Ultra High Bypass Cycle Propulsion Concepts

Current collaborative research with General Electric Aviation on Open Rotor propulsion as part of the Subsonic Fixed Wing Project Ultra High Bypass Engine Partnership Element is discussed. The Subsonic Fixed Wing Project goals are reviewed, as well as their relative technology level compared to previous NASA noise program goals. The current Open Rotor propulsion research activity at NASA and GE are discussed including the contributions each entity bring toward the research project, and technical plans and objectives. GE Open Rotor propulsion technology and business plans currently and toward the future are also discussed, including the role the NASA SFW UHB partnership plays toward achieving those goals.

Hughes, Christopher E.↗

NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗

NASA NTRS2016

Filled Nd(sub z) Fe(sub x) Co(sub 4-x) Sb(sub 12-y) Ge(sub y) Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their enhanced figure of merit (ZT1), cheap material cost, favorable mechanical properties, and good thermal stability. The majority of skutterudite interest in recent years has been focused on binary skutterudites like CoSb3. Binary skutterudites are often double and triple filled, with a range of elements from the lanthanide series, in order to reduce the lattice component of thermal conductivity. Ternary and quaternary skutterudites, such as Co4Ge6Se6 or Ni4Sb8Sn4, provide additional paths to tune the electronic structure. The thermal conductivity can further be improved in these complex skutterudites by the introduction of fillers. The Nd (sub z) Fe (sub x) Co (sub 4-x) Sb (sub 12-y)Ge (sub y) system has been investigated as a p-type thermoelectric material, and is stable up to 600 degrees Centigrade. The influence of Fe and Ge content, along with filler Nd, was investigated on thermoelectric transport properties. In addition to the chemical influence on properties, some processing details of the system will also be addressed.

Electical Conductivity↗