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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Structural and electronic characteristics of amorphous Ge 8 Sb 2 Te 11

GeTe-rich phase-change materials can be utilized in rewriteable optical memory due to the large contrast in reflectivity between amorphous and crystalline phases. Here we explored the structure and electronic properties of amorphous Ge 8 Sb 2 Te 11 using ab initio molecular dynamics simulations. The results indicate that amorphous Ge 8 Sb 2 Te 11 is dominantly composed of Ge-, Sb- and Te-centered octahedrons with distortions, while 30.4 % of Ge-centered clusters are in the form of tetrahedrons which are randomly distributed. The 5-fold rings possess a large proportion, and the Gesingle bondTe and Sbsingle bondTe bonds present larger formation energies than other bonds, leading to the ABAB bonding sequence (A: Ge and Sb, B: Te). The lone pair electrons locating at the opposite direction of bonds possess a large fraction of 14.8 %, which may enhance the distortions of local clusters. Importantly, these structural properties lead to the high stability of amorphous Ge 8 Sb 2 Te 11 and thus long data retention in the information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Valence Disproportionation of GeS in the PbS Matrix Forms Pb 5 Ge 5 S 12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe>PbSe>PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge 2+ substitution in Pb 2+ and discordant off-center behavior; formation of Pb 5 Ge 5 S 12 as stable second phase inclusions through valence disproportionation of Ge 2+ to Ge0 and Ge 4+ . PbS and Pb 5 Ge 5 S 12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb 5 Ge 5 S 12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ lat ) of ~0.61 Wm -1 K -1 . The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room temperature electron mobility of ~121 cm 2 V -1 s -1 for 3 × 10 19 cm -3 carrier density, and a ZT, of 1.32 at 923 K. This is ~ 55% greater that the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT avg ) of ~0.76 from 400 to 923 K is the highest for PbS-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm) −1 and electron concentration of 2 × 10 18 cm −3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN.

Bagheri, Pegah↗
DOE OSTI2020

Soft-mode enhanced type-I superconductivity in LiPd 2 Ge

The synthesis, crystal structure, and physical properties (magnetization, resistivity, heat capacity) in combination with theoretical calculations of the electronic structure and phonon properties are reported for intermetallic compounds LiPd 2 X ( X = Si, Ge, and Sn). LeBail refinement of powder x-ray diffraction data confirms that all compounds belong to the Heusler family (space group $\textit{F m-3m}$, No. 225). The lattice parameter increases with atomic size of X , and its value varies from $\textit{a}$ = 5.9059(4) Å for LiPd 2 Si and $\textit{a}$ = 6.0082(3)Å for LiPd 2 Ge, to $\textit{a}$ = 6.2644(1) Å for LiPd 2 Sn. The first compound, LiPd 2 Si, has apparently not been previously reported. All measured quantities demonstrate that LiPd 2 Ge exhibits superconductivity below $T_c$ = 1.96 K and the normal- and superconducting-state data indicate that it is a weak-strength type-I superconductor ($C/γT_c$ = 1.38) with electron-phonon coupling constant $λ_{e–p}$ = (0.53–0.56). LiPd 2 Si and LiPd 2 Sn are not superconducting above 1.68 K. The experimental observations are supported by theoretical calculations which show that LiPd 2 Ge has the highest computed $λ_{e–p}$ and $T_c$ of the group. A strong softening of the acoustic phonon mode is calculated, and in the case of X = Ge and Sn, imaginary phonon frequencies were computed. In this work, the soft mode is most pronounced in the case of LiPd 2 Ge, which suggests its correlation with superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Incommensurate spin density wave and magnetocaloric effect in the metallic triangular lattice HoAl 2 Ge 2

Here, we report the magnetic structure and the magnetocaloric effect (MCE) of the ternary compound HoAl 2 Ge 2 with a trigonal CaAl 2 Si 2 -type crystal structure. A neutron powder diffraction experiment reveals that HoAl 2 Ge 2 exhibits an incommensurate spin density wave (SDW) with a propagation vector k=(0.23,0,0.06). The special arrangement of magnetic moments in HoAl 2 Ge 2 induces interesting physical phenomena and large magnetocaloric effects. The rise in resistivity at low temperatures indicates the effect of the SDW state in the electronic transport. The maximum magnetic-entropy change is –16.1J/kg K under a magnetic field change of 0–70 kOe for an isotropic HoAl 2 Ge 2 powder and it increases to –17.9J/kg K for a single crystal when the magnetic field (H) is applied parallel to the ab plane. A large rotating magnetic-entropy change of –5.1J/kg K for H=20 kOe in a HoAl 2 Ge 2 single crystal is obtained, which is closely associated to the magnetic anisotropy of the SDW order and its response to the external magnetic field. We discuss the large MCE in terms of the field-induced metamagnetic transition from the incommensurate SDW order to the ferromagnetic order. Our study establishes the triangular lattice R Al 2 Ge 2 (R=rare-earth elements) as a unique family of compounds to explore the existence of the incommensurate spin density waves and the correlated physical properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Quenching of the octupole rotational band in 71 Ge

The main goal of this study was to enhance the knowledge of the properties of the known octupole rotational band in 71 Ge, including transition rates, and to investigate whether the band persists to higher spin. An experiment at Florida State University using the 62 Ni ( 14 C, 𝛼⁢𝑛) reaction at 50 MeV was used to produce 71 Ge at high spin. An array of ten Compton-suppressed Ge detectors, consisting of three Clover detectors and seven single-crystal detectors, was used to measure the 𝛾 decays in coincidence. An analysis of the resulting coincidence spectra resulted in the placement of 13 additional transitions in the 71 Ge level scheme, one of which (1092 keV) extends the octupole band to a (35/2 − ) state at 8206 keV. However, calculations of the kinematic moment of inertia show that the 1092-keV transition disrupts the rigid rotational pattern and is likely associated with a band crossing, potentially quenching the octupole deformation. Transition strengths inferred from lifetime measurements in the octupole band are not well reproduced by either shell-model calculations using the JUN45 interaction or a semimicroscopic cluster model, while those for the 𝜈⁢𝑔 9/2 band are in good agreement with the corresponding shell-model predictions. Comparisons between the octupole band in 71 Ge and negative-parity bands based on 3 − octupole states in some neighboring even-even nuclei show both similarities and differences. Systematic trends within the 𝜈⁢𝑔 9/2 bands among odd-𝐴 Ge isotopes point to increased collectivity near 𝑁 = 40.

59 ≤ A ≤ 89↗
DOE OSTI2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of kagome semimetal Mn 3 Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn 3 Ge , an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall/Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D 0 19 Mn 3 Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn 3 Ge films is estimated to be 0.1 μV/K and is comparable to that in ferromagnetic Fe, despite Mn 3 Ge having a weak magnetization of ~ 3.5 m μ B / Mn at room temperature. In this work, the spin-mixing conductance is 90.5 nm – 2 at the Py / Mn 3 Ge interface, and the spin-Hall angle in Mn 3 Ge is estimated to be about eight times of that in Pt.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Measurement and analysis of distribution coefficients in Fe-Ni alloys containing S and/or P. II - K(Ir), K(Ge), and K(Cu)

Crystals of Fe-Ni-S-P alloys containing Ir, Ge, and Cu in small amounts were grown by plane front solidification. The electron microprobe was used to measure the compositions of these alloys. The Ir, Ge, and Cu distribution coefficients were determined by an analytical procedure from the composition data. The distribution coefficients of Ir, Ge, and Cu vary from 1.20 to 11.0, 0.75 to 2.1, and 0.06 to 0.84, respectively. K(Ir) and K(Ge) increase and K(Cu) decreases with the S content of the liquid. K(Cu) increases and K(Ir) and K(Ge) decrease with the P content of the liquid. Mathematical expressions have been formulated to relate the Ir, Ge, and Cu distribution coefficients to the S and P contents of the liquid. These distribution coefficients are important to the study of the solidification behavior of iron meteorites.

Sellamuthu, R.↗
NASA NTRS1988

Metal with anomalously low Ni and Ge concentrations in the Allan Hills A77081 winonaite

The Ge content of metal in the Allan Hills A77081 winonaite was determined by high-sensitivity electron microprobe analysis. By optimizing analytical conditions for Ge determination, a detection limit of about 75 ppm could be achieved. In A77081 some small kamacite grains contain less Ni and Ge and more Co than coarse-grained metal. These small grains are always associated with sulfide, raising the possibility that anomalous metal is related to eutectic melting. However, when published partition coefficients for Ni and Ge in the Fe-Ni-S system are used to model fractionation of these elements during eutectic melting, one finds that secondary metal should be enriched in Ni and depleted in Ge. Thus, the positive Ni-Ge correlation found in this study is the opposite of the expected trend. No explanation for this discrepancy has yet been found. Nonetheless, the existence of anomalous metal is an indication that A77081, and probably other winonaites as well, have undergone some fractionation. This supports the notion that the high-temperature history of winonaites is related to the formation of IAB iron meteorites, whose silicate inclusions are very similar to winonaites.

Kracher, Alfred↗
NASA NTRS1991

Segmented Ge detector rejection of internal beta activity produced by neutron irradiation

Future Ge spectrometers flown in space to observe cosmic gamma-ray sources will incorporate segmented detectors to reduce the background from radioactivity produced by energetic particle reactions. To demonstrate the effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity, a laboratory experiment has been carried out in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 (36.5 percent of natural Ge) in the detector itself, Ge-75 (t sub 1/2 = 82.78 min), which decays by beta emission with a maximum electron kinetic energy of 1188 keV. By requiring that an ionizing event deposit energy in two or more of the five segments of the detector, each about 1-cm thick, the beta particles, which have a range of about 1-mm, are rejected, while most external gamma rays incident on the detector are counted. Analysis of this experiment indicates that over 85 percent of the beta events from the decay of Ge-75 are rejected, which is in good agreement with Monte Carlo calculations.

Varnell, L. S.↗
DOE OSTI2024

Co 3 Ga 2 Ge 5 : Probing site mixing of the Ru 3 Sn 7 structure type with elements difficult to distinguish by diffraction

Co 3 Ga 2 Ge 5 was synthesized through arc-melting stoichiometric ratios of the elements, and a Ru 3 Sn 7 -type structure was confirmed by X-ray diffraction. Because Co 3 Ga 2 Ge 5 contains Ga and Ge, which have very similar X-ray and neutron scattering factors, any Ga/Ge crystallographic site preference cannot be determined with diffraction alone. The purpose of this study is to highlight the importance of using multiple techniques to characterize otherwise structurally ambiguous intermetallic compounds. Here, we utilize 71 Ga nuclear magnetic resonance spectroscopy and an analysis of the X-ray absorption fine structure to clarify the amount of Ga/Ge site mixing. Our combined use of X-ray diffraction and spectroscopy provides a comprehensive structural analysis of Ga site mixing across the Ge crystallographic sites, enhancing the understanding of the structure and properties of Co 3 Ga 2 Ge 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Copper structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Ge is bonded to twelve equivalent Ge atoms to form a mixture of edge, face, and corner-sharing GeGe12 cuboctahedra. All Ge–Ge bond lengths are 3.03 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is diamond structured and crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. Ge is bonded to four equivalent Ge atoms to form corner-sharing GeGe4 tetrahedra. All Ge–Ge bond lengths are 2.50 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Tungsten structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. Ge is bonded in a body-centered cubic geometry to eight equivalent Ge atoms. All Ge–Ge bond lengths are 2.94 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is beta Sn structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Ge is bonded to six equivalent Ge atoms to form a mixture of distorted edge and corner-sharing GeGe6 pentagonal pyramids. There are four shorter (2.69 Å) and two longer (2.87 Å) Ge–Ge bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Lonsdaleite structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Ge is bonded to four equivalent Ge atoms to form corner-sharing GeGe4 tetrahedra. There are three shorter (2.49 Å) and one longer (2.50 Å) Ge–Ge bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Magnesium structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Ge is bonded to twelve equivalent Ge atoms to form a mixture of corner, edge, and face-sharing GeGe12 cuboctahedra. There are six shorter (2.99 Å) and six longer (3.04 Å) Ge–Ge bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Hg_xSn structured and crystallizes in the orthorhombic Cmmm space group. The structure is three-dimensional. Ge is bonded to eight equivalent Ge atoms to form a mixture of corner and edge-sharing GeGe8 hexagonal bipyramids. There are a spread of Ge–Ge bond distances ranging from 2.70–2.95 Å.

36 MATERIALS SCIENCE↗