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All sources NASA NTRS DOE OSTI

NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗

NASA NTRS1977

A comparison of GaAs and Si hybrid solar power systems

Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

Heinbockel, J. H.↗

NASA NTRS1988

Multijunction upper subcell cascade photovoltaics for space applications

A new class of cascade high-efficiency photovoltaics designed for space-based applications is proposed. The design improves upper subcell performance and avoids electrical and optical losses associated with an intercell ohmic contact. Multijunction upper subcells reduce bulk recombination of photogenerated minority carriers by decreasing the average collection distance, yielding improved spectral response and radiation tolerance. A three-terminal design is employed which circumvents the need for a monolithic intercell contact and, thus, the losses associated with such a contact. Problems related to array interconnection of three-terminal devices may be solved by creating a two-terminal cell from complementary pairs (n-p-n and p-n-p) of three-terminal cells. Simulations of lattice-matched AlGaAs-GaAs and lattice-mismatched AlGaAs-InGaAs cascade cells show that one-sun AM0 efficiencies in excess of 26 and 28 percent, respectively, are possible.

Educato, J. L.↗

DOE OSTI2026

Gate-Tunable Single Terahertz Meta-Atom Ultrastrong Light-Matter Coupling

We study the electrical tunability of ultrastrong light-matter interactions between a single terahertz circuit-based complementary split ring resonator (cSRR) and a two-dimensional electron gas. For this purpose, transmission spectroscopy measurements are performed under the influence of a strong magnetic field at different set points for the electric gate bias. The resulting Landau polariton dispersion depends on the applied electric bias, as the gating technique confines the electrons in-plane down to extremely subwavelength dimensions as small as d = 410 nm. This confinement allows for the excitation of standing plasma waves at zero magnetic field and an effective tunability of the electron number coupled to the THz resonator. This allows the normalized coupling strength to be tuned in situ from η = 0.46 down to η = 0.18. This is the first demonstration of terahertz far-field spectroscopy of an electrically tunable interaction between a single terahertz resonator and electrons in a GaAs quantum well heterostructure.

Landau levels↗

NASA NTRS1980

High-efficiency concentration/multi-solar-cell system for orbital power generation

An analysis was performed to determine the economic feasibility of a concentrating spectrophotovoltaic orbital electrical power generation system. In this system dichroic beam-splitting mirrors are used to divide the solar spectrum into several wavebands. Absorption of these wavebands by solar cells with matched energy bandgaps increases the cell efficiency while decreasing the amount of heat which must be rejected. The optical concentration is performed in two stages. The first concentration stage employs a Cassegrain-type telescope, resulting in a short system length. The output from this stage is directed to compound parabolic concentrators which comprise the second stage of concentration. Ideal efficiencies for one-, two-, three-, and four-cell systems were calculated under 1000 sun, AMO conditions, and optimum energy bands were determined. Realistic efficiencies were calculated for various combinations of Si, GaAs, Ge and GaP. Efficiencies of 32 to 33 percent were obtained with the multicell systems. The optimum system consists of an f/3.5 optical system, a beam splitter to divide the spectrum at 0.9 microns, and two solar cell arrays, GaAs and Si.

Onffroy, J. R.↗

NASA NTRS2002

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗

NASA NTRS1993

A photovoltaic catenary-tent array for the Martian surface

To provide electrical power during an exploration mission to Mars, a deployable tent-shaped structure with a flexible photovoltaic (PV) blanket is proposed. The array is designed with a self-deploying mechanism utilizing pressurized gas expansion. The structural design for the array uses a combination of cables, beams, and columns to support and deploy the PV blanket. Under the force of gravity a cable carrying a uniform load will take the shape of a catenary curve. A catenary-tent collector is self shadowing which must be taken into account in the solar radiation calculation. The shape and the area of the shadow on the array was calculated and used in the determination of the global radiation on the array. The PV blanket shape and structure dimension were optimized to achieve a configuration which maximizes the specific power (W/kg). The optimization was performed for four types of PV blankets (Si, GaAs/Ge, GaAs CLEFT, and amorphous Si) and four types of structure materials (Carbon composite, Aramid Fiber composite, Aluminum, and Magnesium). The results show that the catenary shape of the PV blanket, which produces the highest specific power, corresponds to zero end angle at the base with respect to the horizontal. The tent angle is determined by the combined effect of the array structure specific mass and the PV blanket output power. The combination of carbon composite structural material and GaAs CLEFT solar cells produce the highest specific power. The study was carried out for two sites on Mars corresponding to the Viking Lander locations. The designs were also compared for summer, winter, and yearly operation.

Crutchik, M.↗

NASA NTRS2000

Earth Observing System (EOS) Terra Spacecraft 120 Volt Power Subsystem: Requirements, Development and Implementation

Built by the Lockheed-Martin Corporation, the Earth Observing System (EOS) TERRA spacecraft represents the first orbiting application of a 120 Vdc high voltage spacecraft electrical power system implemented by the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC). The EOS TERRA spacecraft's launch provided a major contribution to the NASA Mission to Planet Earth program while incorporating many state of the art electrical power system technologies to achieve its mission goals. The EOS TERRA spacecraft was designed around five state-of-the-art scientific instrument packages designed to monitor key parameters associated with the earth's climate. The development focus of the TERRA electrical power system (EPS) resulted from a need for high power distribution to the EOS TERRA spacecraft subsystems and instruments and minimizing mass and parasitic losses. Also important as a design goal of the EPS was maintaining tight regulation on voltage and achieving low conducted bus noise characteristics. This paper outlines the major requirements for the EPS as well as the resulting hardware implementation approach adopted to meet the demands of the EOS TERRA low earth orbit mission. The selected orbit, based on scientific needs, to achieve the EOS TERRA mission goals is a sun-synchronous circular 98.2degree inclination Low Earth Orbit (LEO) with a near circular average altitude of 705 kilometers. The nominal spacecraft orbit is approximately 99 minutes with an average eclipse period of about 34 minutes. The scientific goal of the selected orbit is to maintain a repeated 10:30 a.m. +/- 15 minute descending equatorial crossing which provides a fairly clear view of the earth's surface and relatively low cloud interference for the instrument observation measurements. The major EOS TERRA EPS design requirements are single fault tolerant, average orbit power delivery of 2, 530 watts with a defined minimum lifetime of five years (EOL). To meet these mission requirements, while minimizing mass and parasitic power losses, the EOS TERRA project relies on 36, 096 high efficiency Gallium Arsenide (GaAs) on Germanium solar cells adhered to a deployable flexible solar array designed to provide over 5,000 watts of power at EOL. To meet the eclipse power demands of the spacecraft, EOS TERRA selected an application of two 54-cell series connected Individual Pressure Vessel (IPV) Nickel-Hydrogen (NiH2) 50 Ampere-Hour batteries. All of the spacecraft observatory electrical power is controlled via the TERRA Power Distribution Unit (PDU) which is designed to provide main bus regulation of 120 Vdc +/- -4% at all load interfaces through the implementation of majority voter control of both the spacecraft's solar array sequential shunt unit (SSU) and the two battery bi-directional charge and discharge regulators. This paper will review the major electrical power system requirement drivers for the EOS TERRA mission as well as some of the challenges encountered during the development, testing, and implementation of the power system. In addition, spacecraft test and early on orbit performance results will also be covered.

Keys, Denney J.↗

NASA NTRS2011

COMPASS Final Report: Enceladus Solar Electric Propulsion Stage

The results of the NASA Glenn Research Center (GRC) COllaborative Modeling and Parametric Assessment of Space Systems (COMPASS) internal Solar Electric Propulsion (SEP) stage design are documented in this report (Figure 1.1). The SEP Stage was designed to deliver a science probe to Saturn (the probe design was performed separately by the NASA Goddard Space Flight Center s (GSFC) Integrated Mission Design Center (IMDC)). The SEP Stage delivers the 2444 kg probe on a Saturn trajectory with a hyperbolic arrival velocity of 5.4 km/s. The design carried 30 percent mass, 10 percent power, and 6 percent propellant margins. The SEP Stage relies on the probe for substantial guidance, navigation and control (GN&C), command and data handling (C&DH), and Communications functions. The stage is configured to carry the probe and to minimize the packaging interference between the probe and the stage. The propulsion system consisted of a 1+1 (one active, one spare) configuration of gimbaled 7 kW NASA Evolutionary Xenon Thruster (NEXT) ion propulsion thrusters with a throughput of 309 kg Xe propellant. Two 9350 W GaAs triple junction (at 1 Astronomical Unit (AU), includes 10 percent margin) ultra-flex solar arrays provided power to the stage, with Li-ion batteries for launch and contingency operations power. The base structure was an Al-Li hexagonal skin-stringer frame built to withstand launch loads. A passive thermal control system consisted of heat pipes to north and south radiator panels, multilayer insulation (MLI) and heaters for the Xe tank. All systems except tanks and solar arrays were designed to be single fault tolerant.

Oleson, Steven R.↗

NASA NTRS2003

High-Performance Solid-State W-Band Power Amplifiers

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Gaier, Todd↗

NASA NTRS2001

Monolithic THz Frequency Multipliers

Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

Erickson, N. R.↗

NASA NTRS1990

Software breadboard study

The overall goal of this study was to develop new concepts and technology for the Comet Rendezvous Asteroid Flyby (CRAF), Cassini, and other future deep space missions which maximally conform to the Functional Specification for the NASA X-Band Transponder (NXT), FM513778 (preliminary, revised July 26, 1988). The study is composed of two tasks. The first task was to investigate a new digital signal processing technique which involves the processing of 1-bit samples and has the potential for significant size, mass, power, and electrical performance improvements over conventional analog approaches. The entire X-band receiver tracking loop was simulated on a digital computer using a high-level programming language. Simulations on this 'software breadboard' showed the technique to be well-behaved and a good approximation to its analog predecessor from threshold to strong signal levels in terms of tracking-loop performance, command signal-to-noise ratio and ranging signal-to-noise ratio. The successful completion of this task paves the way for building a hardware breadboard, the recommended next step in confirming this approach is ready for incorporation into flight hardware. The second task in this study was to investigate another technique which provides considerable simplification in the synthesis of the receiver first LO over conventional phase-locked multiplier schemes and in this approach, provides down-conversion for an S-band emergency receive mode without the need of an additional LO. The objective of this study was to develop methodology and models to predict the conversion loss, input RF bandwidth, and output RF bandwidth of a series GaAs FET sampling mixer and to breadboard and test a circuit design suitable for the X and S-band down-conversion applications.

Nuckolls, C.↗

NASA NTRS1994

Photovoltaic electric power applied to Unmanned Aerial Vehicles (UAV)

Photovoltaic electric-powered flight is receiving a great deal of attention in the context of the United States' Unmanned Aerial Vehicle (UAV) program. This paper addresses some of the enabling technical areas and their potential solutions. Of particular interest are the long-duration, high-altitude class of UAV's whose mission it is to achieve altitudes between 60,000 and 100,000 feet, and to remain at those altitudes for prolonged periods performing various mapping and surveillance activities. Addressed herein are studies which reveal the need for extremely light-weight and efficient solar cells, high-efficiency electric motor-driven propeller modules, and power management and distribution control elements. Since the potential payloads vary dramatically in their power consumption and duty cycles, a typical load profile has been selected to provide commonality for the propulsion power comparisons. Since missions vary widely with respect to ground coverage requirements, from repeated orbiting over a localized target to long-distance routes over irregular terrain, we have also averaged the power requirements for on-board guidance and control power, as well as ground control and communication link utilization. In the context of the national technology reinvestment program, wherever possible we modeled components and materials which have been qualified for space and defense applications, yet are compatible with civilian UAV activities. These include, but are not limited to, solar cell developments, electric storage technology for diurnal operation, local and ground communications, power management and distribution, and control servo design. And finally, the results of tests conducted by Wright Laboratory on ultralight, highly efficient MOCVD GaAs solar cells purchased from EPI Materials Ltd. (EML) of the UK are presented. These cells were also used for modeling the flight characteristics of UAV aircraft.

Geis, Jack↗

NASA NTRS1992

New approach to the design of Schottky barrier diodes for THz mixers

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Jelenski, A.↗

NASA NTRS1995

Space qualification of IR-reflecting coverslides for GaAs solar cells

Improvements to GaAs solar array performance, from the use on solar cell coverslides of several reflecting coatings that reject unusable portions of the solar spectrum, are quantified. Blue-red-rejection (BRR) coverslides provide both infrared reflection (IRR) and ultraviolet rejection (UVR). BRR coverslides were compared to conventional antireflection (AR) and ultraviolet (UV) coated coverslides. A 2% improvement in peak-power output, relative to that from Ar-coated coverslides, is seen for cells utilizing BRR coverslides with the widest bandpass. Coverslide BRR-filter bandpass width and covered-solar-cell short-circuit current is a function of incident light angle and the observed narrower-bandpass filters are more sensitive to change in angle from the normal than are wide-bandpass filters. The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has indicated that all multilayer coatings on coverslides and solar cells will experience degradation from the space environment (UV and/or electrons). Five types of coverslide coatings, designed for GaAs solar cells, were tested as part of a NASA-sponsored space-flight qualification for BRR, multi-layer-coated, coverslides. The reponse to the different radiations varied with the coatings. The extent of degradation and its consequences on the solar cell electrical characteristics depend upon the coatings and the radiation. In some cases, an improved optical coupling was observed during long-term UV exposure to the optical stack. The benefits of multi-layered solar cell optics may depend upon both the duration and the radiation environment of a mission.

Meulenberg, Andrew↗

DOE OSTI2026

Origins of anisotropic linear magnetoresistance with isotropic mobility in Cd 3 As 2 films on GaAs$[110]$

Thin film synthesis allows for the potential to orient crystals in different orientations, permitting measurement of orientation-dependent material aspects such as band structures and transport anisotropy. Here, Dirac semimetal Cd 3 As 2 films are epitaxially grown on GaAs$[110]$ substrates, which has a $[001]$ orientation in-plane. Films contain domains of two different c-axis orientations resulting from an aligned a-axis in-plane. Magnetoresistance measurements performed along both $[1\bar{1}0]$ and $[001]$ substrate directions reveal similar mobility and carrier concentration, but much larger magnetoresistance along the $[001]$ direction, which can be explained by the guiding center diffusion model as arising from anisotropic disorder and different atomic spacings.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Large Area Near‐Field Thermophotovoltaics for Low Temperature Applications

Abstract Thermophotovoltaics, devices that convert thermal infrared photons to electricity, offer a key pathway for a variety of critical renewable energy technologies including thermal energy storage, waste heat recovery, and direct solar‐thermal power generation. However, conventional far‐field devices struggle to generate reasonable powers at lower temperatures. Near‐field thermophotovoltaics provide a pathway to substantially higher powers by leveraging photon tunneling effects. Here a large area near‐field thermophotovoltaic device is presented, created with an epitaxial co‐fabrication approach, that consists of a self‐supported 0.28 cm 2 emitter‐cell pair with a 150 nm gap. The device generates 1.22 mW at 460 °C, a 25‐fold increase over the same cell measured in a far‐field configuration. Furthermore, the near‐field device demonstrates short circuit current densities greater than the far‐field photocurrent limit at all the temperatures tested, confirming the role of photon tunneling effects in the performance enhancement. Modeling suggests several practical directions for cell improvements and further increases in power density. These results highlight the promise of near‐field thermophotovoltaics, especially for low temperature applications.

36 MATERIALS SCIENCE↗