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At least 73 records · Page 4

Kinetic-controlled transformations of group-III arsenide nanocubes

Tracking the structural evolution of colloidal nanocrystals (NCs) facilitates the mechanistic studies of their materials chemistry. NC engineering via phase transformation reveals the chemical and physical determinants that drive lattice-scale dynamic processes such as cation exchange. Here, in this study, we employed NCs to demonstrate the cation exchange process from Cu 3 As to InAs and GaAs within nanocubes. The symmetry conversion in unit cells from cubic Cu 3 As to hexagonal InAs and GaAs can be described using a schematic cellular automaton model, which suggests a simplified cube-to-sphere transition. The strong covalent characteristics of III–V materials highlight the kinetic control that navigates the tailorable transformation through either an isotropic trajectory, leading to hollow structures, or a topotaxial trajectory, with abundant stacking faults. The reconstruction of complex covalent bonds is envisioned as the foundation for the synthesis of NCs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.

Wampler, W. R.↗

Measurement of the 75 As ⁢(𝑛, 2⁢𝑛) cross section at 14.1 MeV at the National Ignition Facility

Here, a new measurement of the 75 As (𝑛, 2⁢𝑛) measurement was performed using the 14.1 MeV neutron pulse produced by fusion experiments at the National Ignition Facility (NIF). The target material consisted of GaAs foils encapsulated in aluminum irradiation containers, along with Au monitor foils, and positioned in the NIF chamber during high neutron yield shots. After irradiation, the GaAs and Au foils were counted with high purity germanium detectors to assess the production of (𝑛, 2⁢𝑛) activation products to determine the flux and the cross section of interest. The measured cross section was 966 ± 71 mb at 14.1 ± 0.37 MeV. This work provides a proof of concept for a platform for performing “ride-along” cross section measurements at NIF to contribute to existing nuclear data as well as measure new cross sections in the future.

and nuclear chemistry↗

Charge lifetime improvement of the Continuous Electron Beam Accelerator Facility photogun with a biased anode

GaAs photocathodes in dc high-voltage photoguns are highly susceptible to ion back-bombardment, which reduces the photocathode quantum efficiency and limits the useful operating lifetime for producing polarized electron beams. This paper demonstrates that applying a small positive bias to the photogun anode can significantly suppress ion back-bombardment and increase charge lifetime. This technique was studied extensively using the Continuous Electron Beam Accelerator Facility photogun, where highly polarized electron beams created using a strained-superlattice GaAs / GaAsP photocathode were used and charge lifetimes improved by almost a factor of 2. A new simulation code was developed to model ion production and tracking in order to better understand and explain the factors that led to the performance improvement. Results of the experiments and simulations are discussed in detail. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗

Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Topsoil bulk geochemical compositions - An updated harmonized global dataset

Mineral weathering is a key biogeochemical process because of the capacity of minerals to stabilize organic matter. However, predicting soil weathering status across large spatial areas still isn’t possible due to a lack of global data and theoretical frameworks. To address this knowledge gap, multiple global datasets of bulk topsoil geochemical compositions have been harmonized using R. These datasets document topsoil bulk geochemical compositions across five continents (n = ~16,000 observations). Source data for these observations include the EuroGEOSurveys Geochemical Baseline Database (FOREGS), the US Geological Survey National Geochemical Database (NASGLP), the Geochemical Atlas of Australia (GAA), the US Geological Survey Alaska Geochemical Database (AGD84), the National Cooperative Soil Survey (NCSS), the European Geochemical Mapping of Agricultural Soil (GEMAS), Ecorespira-Amazon (ERA), the New Zealand Geochemical Baseline Survey (NZ_GBS), and the African Soil Information Service (AFSIS). Major elements observed include Aluminum (Al), Calcium (Ca), Iron (Fe), Potassium (K), Magnesium (Mg), Sodium (Na), Titanium (Ti), Manganese (Mn), Phosphorus (P), Carbon (C), and Sulfur (S). This data package includes the harmonized dataset itself, and the R scripts necessary to harmonize these datasets, in addition to metadata that describes all columns, files, and databases used in this project. Methods & Sampling Step 1 – Databases of geochemical data identified This study aimed to leverage existing measurements of topsoil geochemical data. Databases were first identified and deemed appropriate for inclusion if they were measuring soils and performed these measurements on the <2mm soil fraction. Databases such as NCSS and AGD84 needed more post processing to include in the database and this was done using the NCSS_datamerge_031626 R file and Alaska_USGSmerge_031626 R file, respectively. Step 2 – Database harmonization Once appropriate databases were identified, they were harmonized for ease of analysis using the R script Database_Harmonization_031826. This included removing columns from original datasets that would not be used in analysis (removed columns are noted in the code). Then, data cleaning procedures specific to each dataset were undertaken. This includes standardizing columns to include units and adding metadata columns regarding procedures for analyzing specific elements. Functions for standardizing measurements and units are outline in R files: calculate element_mg_kg_031626, calculate_oxide_wt_perc_031626, change_oxide_caps_031626, and conv_2_numeric_031626. This also included adding a unique identifier for each sample to identify it with its respective database (see CD_ID in data dictionary). Geographic information: Data reflect a compilation of datasets collected globally. Geographic areas covered by each of the datasets include: - EuroGEOSurveys Geochemical Baseline Database (FOREGS) - European continent - North American Soil Geochemical Landscapes (NASGLP) - continental United States and limited parts of Canada (see database key for more details) - National Geochemical Survey of Australia (GAA) - Australia - Alaska geochemical database (AGDB4) - Alaska - National Cooperative Soil Survey (NCSS) - Global measurements, but concentrated in the continental United States - Geochemical data for arable land and land under permanent grass cover in continental Europe (GEMAS) - continental Europe - Ecorespira-Amazon (ERA) - Geochemical data from the Amazon basin - Geochemical baseline data for New Zealand (NZGBS) - New Zealand - Geochemical data collected across continental Africa (AfSIS) - Measurements across Africa

EARTH SCIENCE > LAND SURFACE > SOILS↗

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗

Shot‐Noise‐Driven Macroscopic Vibrations and Displacement Transduction in Quantum Tunnel Junctions

Back‐action is an inevitable result of quantum measurement. Although the microscopic impacts of shot‐noise back‐action have been explored, macroscopic evidence is seldom documented, especially in the field of electrical transport. Tunneling shot‐noise has been shown to excite the fundamental flexural mode of the host crystal using a sub‐GHz lumped‐element radio‐frequency quantum point contact (QPC). Here, in this study, this aspect of shot‐noise back‐action is examined at much higher operational frequencies and wider bandwidths by employing a GaAs QPC integrated into a planar superconducting cavity within the circuit‐QED framework, leading to the observation of the excitation of multiple mechanical modes. The device operates in the shot‐noise‐limited regime. Constructed on a piezoelectric platform, there is positive feedback between the electrical and mechanical degrees of freedom within the QPC. Shot‐noise excites piezoelectric vibrational modes; concurrently the resulting polarization charges enhance tunneling and develop peaks in the shot‐noise spectra at the modal frequencies. The excitation of vibrational modes is a macroscopic demonstration of measurement back‐action, and the amplitudes of the noise‐peaks enable us to calibrate the displacement sensitivity of the QPC‐resonator systems, which is in the range $≈ 35 fm/√ Hz$, making it an excellent sensor for ultra‐sensitive and rapid strain/displacement detection.

Kumbhakar, Prasanta [Indian Institute of Science E↗

Tailored Frequency Conversion in Nonlinear Subwavelength Grating Metaslabs

The use of metaslab waveguides consisting of subwavelength gratings (SWGs) is proposed as a highly flexible approach to obtain phase‐matched frequency conversion in nonlinear integrated devices. Control over the phase matching (PM) condition is achieved through modification of the linear modal propagation constants by the SWG. The method is experimentally demonstrated by fabrication of 0.4 mm‐long GaAs metaslabs designed for second harmonic generation of near‐infrared light. A controlled spectral shift of up to 100 nm in the PM condition, relative to a uniform slab is observed. Excellent agreement is found between the experimental results and finite‐difference eigenmode simulations, which predict a tunable frequency conversion bandwidth of ∼300 nm for the design parameters. The different regimes of PM control supported by the structure are discussed. This work highlights the potential of SWGs as building blocks for tailored frequency conversion in nonlinear integrated devices.

Form birefringence↗

Solar Cell Performance after Exfoliation Using Sonic Liftoff

Removing grown device layers from a GaAs substrate is an essential aspect of reducing costs of III–V photovoltaics. While many methods of device layer removal have been explored, Sonic Lift‐off (SLO) demonstrates novel control of the stress conditions within the substrate during exfoliation. By utilizing acoustic energy, this technique allows for a lower maximum stress required to fully lift‐off layers from a substrate. We demonstrate that this technique results in no damage to inverted‐grown and upright‐grown exfoliated devices. The inverted device demonstrated an efficiency of 26.8% after SLO in comparison to 26.5% for a traditionally‐processed cell, and the upright device showed a 22.0% efficiency after SLO. The SLO process has been shown to produce exfoliated, damage‐free devices and opens the door for substrate reuse to reduce the cost of III–V photovoltaics.

14 SOLAR ENERGY↗

Broadband phonon production from axion absorption

We show that axion dark matter in the range meV ≲ m a ≲ 100 meV can incoherently excite phonons in crystal targets with unpolarised nuclear spins. This can occur through its coupling to nuclear spins and/or through its induced time-dependent electric dipole moment in nuclei. Due to the random orientation of the nuclear spins, translation symmetry is broken in the phonon effective theory, allowing axion absorption to create phonons with unrestricted momentum. The absorption rate is therefore proportional to the phonon density of states, which generically has support across a wide range of energies, allowing for a broadband detection scheme. We calculate the absorption rate for solid H 2 , D 2 , Al 2 O 3 , GaAs, H 2 O, D 2 O, Be and Li 2 O, and find that materials containing light, non-zero spin nuclei are the most promising. The predicted rates for the QCD axion are of the order of a few events / 10 kg-year exposure, setting an ambitious target for the required exposure and background suppression.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. Here, we show that this circuit has a signal-to-noise ratio (SNR) of ~ 2 $\frac{e}{√Hz}$ at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

Charge-Coupled Devices↗

Point defect energetics in gallium arsenide, a comprehensive density functional theory study

In materials, point defects often control or modify functional properties. To predict the performance of materials intended for application in optoelectronic devices, it is imperative to understand the properties of those point defects. For the first time, all six intrinsic defects of GaAs, a key optoelectronics material, and their charge transition levels are calculated using density functional theory with the HSE06 functional. For comparison, both PBE and r 2 SCAN calculations are also carried out. The HSE06 results are found to be in better agreement with experimental data than previous calculations. In conclusion, the importance of using the exact electron exchange present in hybrid functionals and larger supercells to accurately determine defect levels and ground state defect configurations is demonstrated.

36 MATERIALS SCIENCE↗

Modeling athermal phonons in novel materials using the G4CMP simulation toolkit

Understanding phonon and charge propagation in superconducting devices plays an important role in both performing low-threshold dark matter searches and limiting correlated errors in superconducting qubits. The Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, models charge and phonon transport within silicon and germanium detectors and has been validated by experimental measurements of phonon caustics, mean charge-carrier drift velocities, and heat pulse propagation times. Here, in this work, we present a concise framework for expanding the capabilities for phonon transport to a number of other novel substrate materials of interest to the dark matter and quantum computing communities, including sapphire (Al 2 O 3 ), gallium arsenide (GaAs), lithium fluoride (LiF), calcium tungstate (CaWO 4 ), and calcium fluoride (CaF 2 ). We demonstrate the use of this framework in generating phonon transport properties of these materials and compare these properties with experimentally-determined values where available.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Quantum Pair Generation in Nonlinear Metasurfaces with Mixed and Pure Photon Polarizations

Metasurfaces are highly effective at manipulating classical light in the linear regime; however, effectively controlling the polarization of nonclassical light generated from nonlinear resonant metasurfaces remains a challenge. Here, in this study, we present a solution by achieving polarization engineering of frequency-nondegenerate biphotons emitted via spontaneous parametric down-conversion in GaAs metasurfaces, utilizing quasi-bound states in the continuum (qBIC) resonances to enhance biphoton generation. Through comprehensive polarization tomography, we demonstrate that the emitted photons’ polarization directly reflects the qBIC mode’s far-field properties. Furthermore, we show that both the type of qBIC mode and the symmetry of the meta-atoms can be tailored to control each single-photon polarization state, and that the subsequent two-photon polarization states are nearly separable, offering potential applications in the heralded generation of single photons with adjustable polarization. This work provides a significant step toward utilizing metasurfaces to generate quantum light and engineer their polarization, a critical aspect for future quantum technologies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Enhanced Second and Third Harmonic Generations in Metasurfaces Enabled through Point Group Design and Accidental Bound States in the Continuum

Here, we investigate enhanced second‑ and third‑harmonic generation (SHG and THG) in GaAs metasurfaces by combining electromagnetic point‑group designs with accidental bound states in the continuum (BICs). Using group theory, we predict the existence, suppression, and polarization selection rules of SHG and THG for metasurfaces belonging to the D 2h and C 2v point groups. In D 2h metasurfaces, inversion symmetry suppresses SHG while enabling polarization‑selective THG, which is strongly enhanced near accidental BICs with ultrahigh Q‑factors approaching 107. By breaking inversion symmetry to form C 2v metasurfaces through the introduction of nanogaps, SHG is now allowed and is dramatically enhanced near accidental BICs. Importantly, accidental BICs preserve polarization selection rules while providing a robust parameter range for high‑Q resonances, in contrast to quasi‑BICs induced by symmetry breaking. Our results demonstrate that the combination of point‑group theory and accidental‑BIC engineering offers a predictive and robust route toward highly efficient nonlinear metasurfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Gate-Tunable Single Terahertz Meta-Atom Ultrastrong Light-Matter Coupling

We study the electrical tunability of ultrastrong light-matter interactions between a single terahertz circuit-based complementary split ring resonator (cSRR) and a two-dimensional electron gas. For this purpose, transmission spectroscopy measurements are performed under the influence of a strong magnetic field at different set points for the electric gate bias. The resulting Landau polariton dispersion depends on the applied electric bias, as the gating technique confines the electrons in-plane down to extremely subwavelength dimensions as small as d = 410 nm. This confinement allows for the excitation of standing plasma waves at zero magnetic field and an effective tunability of the electron number coupled to the THz resonator. This allows the normalized coupling strength to be tuned in situ from η = 0.46 down to η = 0.18. This is the first demonstration of terahertz far-field spectroscopy of an electrically tunable interaction between a single terahertz resonator and electrons in a GaAs quantum well heterostructure.

Landau levels↗