Chapter 5: Defects in beta-Ga2O3: Theory and Microscopic Studies
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Electronic Structure of Tungsten-Doped β -Ga 2 O 3 Compounds
Tungsten (W) doped gallium oxide (Ga2O3) (Ga2-2xWxO3, 0.00=x=0.30, GWO) polycrystalline ceramic compounds were synthesized via conventional, high-temperature solid-state reaction method. The effect of W-doping on the crystal structure and electronic structure of the resulting GWO materials is studied in detail. The GWO compounds were single-phase, crystallized in ß-Ga2O3 for x=0.15, at which point the Ga2O3-WO3 composite formation occurs. The average crystallite size increases with increasing W-content; however, the effect is predominant only in the single phase GWO compounds. Corroborating with structural analyses, the X-ray photoelectron spectroscopy (XPS) measurements reveal the chemical state of W ions vary in GWO compounds as a function of W concentration. The mixed chemical valence states of W (W4+ and W6+) were evident in single-phase GWO compounds where the W-concentration is lower. However, W ions exhibit the highest chemical valence state (W6+) for higher x values, which resulted in the Ga2O3-WO3 composite formation. The Ga ions exists in their highest chemical valence state (Ga3+) in all of the GWO compounds. The scientific understanding of the electronic structure of the GWO materials derived as function of W concentration could be useful while considering the W-doped Ga2O3 materials and/or W-Ga2O3 contacts for electronic and optoelectronic device applications.
W-doping, Ga2O3-WO3 Composite, Electronic Structur↗
Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion
Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films also crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.
Chemical composition↗
Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films
Ga2O3 thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 oC). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-700 oC. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25-800 oC. A relationship between microstructure and optical property is discussed.
Environmental Molecular Sciences Laboratory↗
Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching
We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.
42 ENGINEERING↗
Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newly developed method for Ga2O3 thermal atomic layer etching, in which surface modification is achieved through HF exposure resulting in a gallium fluoride surface layer, and then removed through volatile product formation via ligand exchange with TMG. Saturation of the precursor exposure at a substrate temperature of 300 °C resulted in an etch rate of 1.0 ± 0.1 Å/cycle for amorphous Ga2O3. Uniformity and conformality of the atomic layer etching process were confirmed via atomic force microscopy with a measured surface roughness of 0.55 ± 0.05 nm that remains unchanged after etching. The use of TMG for etching may expand available precursors for atomic layer etching processes, while allowing for both etching and deposition of Ga2O3 using the same metalorganic precursor.
Hatch, Kevin A. (ORCID:0000000283118623)↗
An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs
The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.
ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications
β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.
Sohel, Shahadat H.↗
Glass formation and properties in the gallia-calcia system
The critical cooling rate for glass formation was measured for five compositions in the Ga2O3-CaO system and varied from a low of (315 + or - 85) C/s for a eutectic melt containing 37.5 mol pct Ga2O3 to a high of (840 + or - 60) C/s for a melt containing 52 mol pct Ga2O3. The density and refractive index both increased with increasing Ga2O3 content, but the crystallization temperature and microhardness varied only slightly. The IR spectra of these glasses suggest that both GaO4 tetrahedra and GaO6 octahedra are present.
Whichard, G.↗
Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market
More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.
28 EE - Advanced Manufacturing Office (EE-5A)↗
Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market: Preprint
More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the techno-economic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.
economics↗
Controlled optical properties via chemical composition tuning in molybdenum-incorporated β-Ga 2 O 3 nanocrystalline films
An approach is presented to design refractory-metal incorporated Ga2O3-based materials with controlled structural and optical properties. The molybdenum (Mo)-content in Ga2O3 was varied from 0 to 11 at% in the sputter-deposited Ga-Mo-O films. Molybdenum was found to significantly affect the structure and optical properties. While low Mo-content (≤4 at%) results in the formation of single-phase (β-Ga2O3), higher Mo-content results in amorphization. Chemically-induced band gap variability (Eg~1 eV) coupled with structure-modification indicates the electronic-structure changes in Ga-Mo-O. The linear relationship between chemical-composition and optical properties suggests that tailoring the optical-quality and performance of Ga-Mo-O films is possible by tuning the Mo-content.
Environmental Molecular Sciences Laboratory↗
Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis
Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gallium oxide gel-derived powders and thin films using infrared vibrational spectroscopy, X-ray diffraction, and pair distribution function (PDF) analysis of X-ray total scattering from standard and normal incidence thin-film geometries (tfPDF). We find that the gel-derived powders and films from the same aqueous precursor evolve differently with temperature, forming mixtures of Ga-substituted In2O3 and In-substituted β-Ga2O3 with different degrees of substitution. X-ray total scattering and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3 phase, with a minor constituent of In2O3 with significantly larger coherence lengths. This amorphous β-Ga2O3 phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film composition and structure, which can be used to detail the effect of processing conditions and structure–property relationships. This study also demonstrates how structural features of amorphous materials, traditionally difficult to characterize by standard diffraction, can be elucidated using tfPDF.
36 MATERIALS SCIENCE↗
Low Temperature Flux Growth of 2H-SiC and Beta-Gallium Oxide
We present brief overview of our study on the low temperature flux growth of two very important novel wide bandgap materials 2H-SiC and Beta-gallium oxide (Beta-Ga2O3). We have synthesized and grown 5 millimeter to 1 centimeter size single crystals of Beta-gallium oxide (Beta-Ga2O3). We used a flux and semi wet method to grow transparent good quality crystals. In the semi-wet method Ga2O3 was synthesized with starting gallium nitrate solution and urea as a nucleation agent. In the flux method we used tin and other metallic flux. This crystal was placed in an alumina crucible and temperature was raised above 1050 degrees Centigrade. After a time period of thirty hours, we observed prismatic and needle shaped crystals of gallium oxide. Scanning electron microscopic studies showed step growth morphology. Crystal was polished to measure the properties. Bandgap was measured 4.7electronvolts using the optical absorption curve. Another wide bandgap hexagonal 2H-SiC was grown by using Si-Al eutectic flux in the graphite crucible. We used slight AlN also as the impurity in the flux. The temperature was raised up to 1050 degrees Centigrade and slowly cooled to 850 degrees Centigrade. Preliminary characterization results of this material are also reported.
Singh, N. B.↗
Ni5Ga3 Catalysts for CO2 Reduction to Methanol: Exploring the Role of Ga Surface Oxidation/reductions on Catalytic Activity
Ad-Ni5Ga3/SiO2 catalyst, which is highly active and stable for thermal CO2 hydrogenation to methanol, was investigated to understand its surface dynamics during reaction conditions. The catalyst was prepared, tested and characterized using a multitude of techniques, including ex-situ XRD, TEM, H2-TPR, CO chemisorption and in-situ ETEM and APXPS. The formation of Ga2O3 upon air exposure was observed and the consequences on catalytic activity were investigated. Results revealed that upon air exposure Ga migrates from the subsurface region to the surface of the nanoparticles forming a Ga-oxide shell surrounding a metallic core. The oxide shell can be reduced completely at high temperatures and the temperature of the reduction activation treatment plays a crucial role on the catalytic activity. This air exposure-reduction procedure results in a redistribution of the Ga species in the surface/subsurface region, promoted by a higher Ga affinity for oxygen. XRD analysis of the post-reaction samples provide evidence for the partial transformation of a Ni5Ga3 intermetallic phase into a Ni-rich Ni3Ga phase. APXPS data indicate that the Ni-rich phase forms in the subsurface region. A Ga-rich phase exists on the surface, where the Ni/Ga ratio reaches 2/3 upon activation in hydrogen. At low reduction temperatures an amorphous Ga2O3 shell remains, indicating a promotion effect on methanol synthesis activity.
Ni-Ga, intermetallic, methanol synthesis, in-situ ↗
Correlation between Structure, Chemistry, and Dielectric Properties of Iron-Doped Gallium Oxide (Ga 2– x Fe x O 3 )
Iron (Fe) doped gallium oxide (Ga2O3) compounds (Ga2-xFexO3; x=0.0-0.3; referred to GFO) were synthesized by the standard high-temperature solid-state chemical reaction method. X-ray diffraction (XRD) analyses confirmed that the sintered GFO compounds stabilized in monoclinic crystal structure with C2/m space group. Local structure and chemical bonding analyses using X-ray absorption near edge structure (XANES) revealed that the Fe occupies octahedral and tetrahedral sites similar to Ga in parent Ga2O3 lattice without considerable changes in the local symmetry. Morphology of the GFO compounds is characterized by the presence of rod-shaped particle (from around 2.0-3.5 µm) features. The energy dispersive X-ray spectroscopy (EDS) confirmed the chemical stoichiometry of the GFO compounds, where the atomic ratio of the constituted elements is in accordance with the calculated concentration values. The frequency and temperature dependent dielectric properties of the GFO compounds exhibited the traditional dielectric dispersion behavior. Relatively high dielectric constant at lower frequencies is attributed to Maxwell-Wagner type of dielectric relaxation which primarily originated from uncompensated charges at electrode material interface. Based on the results and analyses, the effect of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds is established.Based on the results and analyses, the effects of Fe content on the crystal structure, chemical bonding and local structure, and dielectric properties of Ga2-xFexO3 compounds are established.
Roy, Swadipta↗
Computational Insights into Phase Equilibria Between Wide-Gap Semiconductors and Contact Materials
Novel wide-band-gap semiconductors are needed for next-generation power electronics, but there is a gap between a promising material and a functional device. Finding stable (metal) contacts is one of the major challenges that is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase coexistence at the junction between three wide-gap semiconductors, ..beta..-Ga2O3, GeO2, and GaN, and possible contact materials. The pool of possible contacts includes 47 elemental metals and a set of 4 common, n-type transparent conducting oxides (ZnO, TiO2, SnO2, and In2O3). We use first-principles thermodynamics to model the Gibbs free energies of chemical reactions as a function of gas pressure (pO2/pN2) and equilibrium temperature. We deduce whether a semiconductor/contact interface will be stable at relevant conditions or a chemical reaction between them is to be expected, possibly influencing the long-term reliability and performance of devices. We generally find that most elemental metals tend to oxidize or nitridize and form various interface oxide/nitride layers. Exceptions include select late- and post-transition metals and, in the case of GaN, also the alkali metals, which are predicted to exhibit stable coexistence, although in many cases at relatively low gas partial pressures. Similar is true for the transparent conducting oxides, for which, in most cases, we predict a preference toward forming ternary oxides when in contact with ..beta..-Ga2O3 and GeO2. The only exception is SnO2, which we find to form stable contacts with both oxides. Finally, we show how the same approach can be used to predict gas partial pressure vs temperature phase diagrams to help direct synthesis of ternary compounds. We believe these results provide a valuable guidance in selecting contact materials to wide-gap semiconductors and suitable growth conditions.
contact materials↗
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗