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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1993

Noble gas evidence of an aqueous reservoir near the surface of Mars more recently than 1.3 Ga

Considerable evidence points to a Martian origin of the SNC meteorites. One of these meteorites, Nakhla, contains a leachable component which has an elevated Xe-129/Xe-132 ratio relative to its Kr-84/Xe-132 ratio when compared to the approximately linear array defined by Chassigny, most shergottites, and lithology C of EETA 79001. This array is thought to be a mixing line between Martian mantle and Martian atmosphere. The leachable component probably consists in part of iddingsite, an alteration product produced by interaction of olivine with aqueous fluid at temperatures lower than 150 C. The radiogenic Xe component may represent a distinct reservoir in the Martian crust or mantle. More plausibly, it is Martian atmosphere, fractionated by solution in liquid water and by interaction with sediment. The crystallization age of Nakhla is 1.3 Ga. Its low shock state suggests that it was ejected from near the surface of Mars. Liquid water is required for the formation of iddingsite. These observations provide further evidence for the near surface existence of aqueous fluids more recently than 1.3 Ga.

Drake, Michael J.↗
NASA NTRS1993

U-Pb isotopic ages and characteristics of ancient (greater than 4.0 Ga) lunar highland rocks

A review of the present (and certainly sparse) U-Pb isotopic database for ancient (greater than 4.0 Ga) lunar highland rocks indicates that both early-forming anorthosites and high-Mg suite rocks were formed from sources with a wide variety of U-238/Pb-204(mu) values as early as 4.44 Ga. The U-Pb data from Apollo 16 anorthosites 67075, 60025, and 62337 indicate source-mu values between approximately 55 and approximately 350; whereas values for high-Mg suite rocks are tentatively considered to be over 500, similar to KREEP sources. At present, I interpret the data to indicate that either early cumulates were formed slowly in a magma environment that allowed isotopic reequilibration or mixing over a long period of crystallization, or these cumulates formed from rapidly-evolving (both geochemically and isotopically) residual liquids. It is possible that an early bombardment period played a role in the mixing process.

Premo, W. R.↗
NASA NTRS1994

GA-optimization for rapid prototype system demonstration

An application of the Genetic Algorithm (GA) is discussed. A novel scheme of Hierarchical GA was developed to solve complicated engineering problems which require optimization of a large number of parameters with high precision. High level GAs search for few parameters which are much more sensitive to the system performance. Low level GAs search in more detail and employ a greater number of parameters for further optimization. Therefore, the complexity of the search is decreased and the computing resources are used more efficiently.

Kim, Jinwoo↗
NASA NTRS1995

Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

Henderson, R. H.↗
NASA NTRS1995

In(x)Ga(1-x)As/GaAs Quantum-Well Infrared Photodetectors

Choice of materials for present quantum-well infrared photodetectors (QWIPs) affected principally by two considerations. One was that in comparison with GaAs, In(x)Ga(1-x)As is potentially superior quantum-well material because of its stronger absorption of infrared radiation. Other consideration was that in comparison with Al(x)Ga(1-x)As, which is usual barrier material in older devices, GaAs potentially superior barrier material because it exhibits superior transport properties (lower scattering and higher mobility of charge carriers). GaAs is well material in older devices and barrier material in present devices.

Gunapala, Sarath D.↗
NASA NTRS2001

Band-gap Engineering in Sputter Deposited Amorphous/Microcrystalline Sc(x)Ga(1-x)N

Reactive sputtering was used to grow thin films of Sc(x)Ga(1-x)N with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with increasing Ga concentration between 2.0 and 3.5 eV. Ellipsometry was used to confirm the band gap measurements and provide optical constants in the range 250-1200 nm. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys, not heterogeneous mixtures.

Little, Mark E.↗
NASA NTRS2003

Ar-39 - Ar-40 Evidence for an Approximately 4.26 Ga Impact Heating Event on the LL Parent Body

Miller Range 99301 is a type 6, unbrecciated LL chondrite. MIL 99301 is of interest because some compositional and petrographic features suggest it experienced rather high shock grades, whereas other features suggest it is relatively unshocked. Inconsistent shock indicators could be explained if MIL 99301 was shocked but then partly annealed by heat produced by impacts on the parent body. The hypothesis that MIL 99301 experienced high temperature metamorphism (type 6) followed by a later shock event that heated, but did not melt, the constituent feldspar can be evaluated using (39)Ar-(40)Ar chronology. This is because (39)Ar-(40)Ar ages of shocked ordinary chondrites are generally <4.2 Ga, whereas (39)Ar-(40)Ar ages of unshocked meteorites are generally older, and between 4.52 - 4.38 Ga.

Dixon, E. T.↗
NASA NTRS2005

Influence of Silicate Melt Composition on Metal/Silicate Partitioning of W, Ge, Ga and Ni

The depletion of the siderophile elements in the Earth's upper mantle relative to the chondritic meteorites is a geochemical imprint of core segregation. Therefore, metal/silicate partition coefficients (Dm/s) for siderophile elements are essential to investigations of core formation when used in conjunction with the pattern of elemental abundances in the Earth's mantle. The partitioning of siderophile elements is controlled by temperature, pressure, oxygen fugacity, and by the compositions of the metal and silicate phases. Several recent studies have shown the importance of silicate melt composition on the partitioning of siderophile elements between silicate and metallic liquids. It has been demonstrated that many elements display increased solubility in less polymerized (mafic) melts. However, the importance of silicate melt composition was believed to be minor compared to the influence of oxygen fugacity until studies showed that melt composition is an important factor at high pressures and temperatures. It was found that melt composition is also important for partitioning of high valency siderophile elements. Atmospheric experiments were conducted, varying only silicate melt composition, to assess the importance of silicate melt composition for the partitioning of W, Co and Ga and found that the valence of the dissolving species plays an important role in determining the effect of composition on solubility. In this study, we extend the data set to higher pressures and investigate the role of silicate melt composition on the partitioning of the siderophile elements W, Ge, Ga and Ni between metallic and silicate liquid.

Singletary, S. J.↗
NASA NTRS2005

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

Dhere, Neelkanth G.↗
NASA NTRS2006

Next Generation NASA GA Advanced Concept

Not only is the common dream of frequent personal flight travel going unfulfilled, the current generation of General Aviation (GA) is facing tremendous challenges that threaten to relegate the Single Engine Piston (SEP) aircraft market to a footnote in the history of U.S. aviation. A case is made that this crisis stems from a generally low utility coupled to a high cost that makes the SEP aircraft of relatively low transportation value and beyond the means of many. The roots of this low value are examined in a broad sense, and a Next Generation NASA Advanced GA Concept is presented that attacks those elements addressable by synergistic aircraft design.

Hahn, Andrew S.↗
NASA NTRS2006

Modeling of the Temperature-dependent Spectral Response of In(1-x)Ga(x)Sb Infrared Photodetectors

A model of the spectral responsivity of In(1-x) Ga(x) Sb p-n junction infrared photodetectors has been developed. This model is based on calculations of the photogenerated and diffusion currents in the device. Expressions for the carrier mobilities, absorption coefficient and normal-incidence reflectivity as a function of temperature were derived from extensions made to Adachi and Caughey-Thomas models. Contributions from the Auger recombination mechanism, which increase with a rise in temperature, have also been considered. The responsivity was evaluated for different doping levels, diffusion depths, operating temperatures, and photon energies. Parameters calculated from the model were compared with available experimental data, and good agreement was obtained. These theoretical calculations help to better understand the electro-optical behavior of In(1-x) Ga(x) Sb photodetectors, and can be utilized for performance enhancement through optimization of the device structure.

Gonzalex-Cuevas, Juan A.↗
NASA NTRS2013

NWA 7034 Martian Breccia: Disturbed Rb-Sr Systematics, Preliminary Is Approximately 4.4 Ga Sm-Nd Age

Agee et al. [1] reported a Rb-Sr age of 2.089 [plus or minus] 0.081 Ga for the unique Martian meteoritic breccia NWA 7034 making it the oldest Martian basalt, dating to the early Am-azonian epoch [2] of Martian geologic history. We have attempt-ed to confirm this exciting result. Our new Rb-Sr analyses show the Rb-Sr isotopic system to be disturbed, but preliminary Sm-Nd data suggest an even older age of approximately 4.4 Ga for at least some brec-cia components.

Nyquist, L. E.↗