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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

EVs@Scale NextGen Profiles: High Level Analysis and Procedures Report

As part of the U.S. DOE EVs@Scale consortium, the NextGen Profiles (NGP) project presents analysis and results from the study of High Power Charging Electric Vehicles and Battery Charging Infrastructure. High Power Charging equipment is capable of recharging electric vehicle traction batteries at power levels of 200KW and above. The NextGen Profiles project has three pillars of investigation: Electric Vehicle Charging Profile Capture, Electric Vehicle Service Equipment Performance Characterization and Fleet Utilization analysis. All NextGen Profiles project testing was conducted under test conditions that comprise a diverse range of realistic real-world operating conditions including nominal conditions that should transfer the maximum allowable energy in the minimum time possible and off-nominal conditions that typify charging performance under suboptimal charging conditions. Results from 13 unique EVs, eight EVSEs and four electrified fleets are included in the NextGen Profiles project analysis.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.

Cao, Yuke↗
DOE OSTI2023

Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency among all solid-state detectors at 59%. To overcome the short comings of MOCVD growth, including inherently low growth rate and unavoidable impurities such as carbon in metal organic source, we demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers using halide vapor phase epitaxy (HVPE), which is an established technique for producing GaN semi-bulk crystals at a high growth rate. Electrical transport characterization results revealed that these HVPE grown materials possess an electrical resistivity of 1 × 1013 Ω cm, and a charge carrier mobility and lifetime product of 2 × 10−4 cm2/V s. Detectors fabricated from a 100 μm thick h-BN wafer have demonstrated a thermal neutron detection efficiency of 20%, corresponding to a charge collection efficiency of ∼60% at an operating voltage of 500 V. This initial demonstration opens the door for mass producing high efficiency h-BN semiconductor neutron detectors at a reduced cost, which could create unprecedented applications in nuclear energy, national security, nuclear waste monitoring and management, the health care industry, and material sciences.

Physics↗
DOE OSTI2024

Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general.

Physics↗
DOE OSTI2025

Characterizing the Oscillatory Properties of Bulk Electric Systems

This paper presents a process for characterizing the oscillatory dynamics of a large bulk power system. As a demonstration, the process is applied to the Western Interconnection of North America. Several complementary analysis approaches, both new and existing, are employed to provide a comprehensive understanding of the oscillatory properties of the system. Established modal analysis techniques based on ringdown and mode-meter algorithms are utilized. In addition, we derive and apply methods based on spectral correlation analysis to identify modal frequencies, distinguish between modes that are closely spaced in frequency, and determine locations at which the modes are observable. Critical interarea modes are identified and characterized using actual-system synchrophasor measurements taken over several years of operation in concert with industry-standard simulation models. This includes 145 hours of PMU data and two planning base cases.

42 ENGINEERING↗
DOE OSTI2023

Spread Spectrum Time-Domain Reflectometry and Frequency Domain Reflectometry to Detect Shielded and Unshielded Cable Moisture Exposure

This work evaluates the feasibility to extend spread spectrum time-domain reflectometry (SSTDR) and frequency domain reflectometry (FDR) electrical cable testing to characterize whether an electrical cable is submerged in water or not and where it may be submerged. Using PNNL’s ARENA cable and motor test bed, shielded and non-shielded electrical cables were evaluated using SSTDR and FDR methods to detect and locate electrical cable exposure to water. Both SSTDR and FDR showed the presence of water with a non-shielded cable. Moisture was only detectable with the shielded cable if the insulation was damaged.

reflectometry cable test, cable moisture detection↗
DOE OSTI2025

A simple centrifuge cell method for ex situ quantification of electrical conductivity of slurry electrode materials

We present the design, experimental procedure, and experimental evaluation of a system for fast, simple, and ex situ characterization of electrical conductivity of slurry electrode materials. The system uses a custom-designed electrochemical cell compatible with centrifugation in a swing-bucket centrifuge. The cell features cylindrical graphite electrodes that are partially sheathed so as to expose only 2 mm of the electrode surface to the bottom region of the packed particulate pellet. Also presented is a conduction model that provides a shape factor for estimating effective conductivity. We tested aqueous solutions of carbon black (CB), activated carbon (AC), and mixtures thereof. These particles were dispersed in 0.0 and 0.5 M NaCl solutions. Measurements show that the effective conductivity initially increases linearly with pellet mass and then saturates at higher masses. Notably, CB exhibited a fivefold increase in conductivity than AC at equal pellet masses. CB/AC mixtures at a fixed pellet mass were tested with CB mass fractions of 0 to 100%. Interestingly, the mixture conductivity was found to be a non-monotonic function of CB mass fraction, with a maximum conductivity at about 60 % CB mass fraction. At this maximum, the mixture conductivity is approximately 30 % higher than pure CB. NaCl concentration in the slurry solution had no effects on conductivity. These results highlight the interactions between slurry electrode composition and compaction, offering insights for optimizing slurry electrodes. Furthermore, the system and results may also be applicable to evaluation of particulate materials (including slurries) used for Li-ion batteries, capacitive deionization, fuel cells, and flow electrodes.

Capacitive deionization↗
DOE OSTI2026

Advanced Power Electronics and Electric Machines

NLR's advanced power electronics and electric machines (APEEM) research group develops world-class experimental and modeling capabilities to design and evaluate efficient and reliable power electronics and electric machines, as well as innovative thermal management systems to maximize their performance. They also design, fabricate, and characterize advanced power electronics packaging and are developing state-of-health monitoring techniques.

25 ENERGY STORAGE↗
DOE OSTI2024

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a MoSe 2 /hBN/MoSe 2 Heterostructure

Controlling interlayer excitons in Van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe 2 /hBN/MoSe 2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~1⁢8⁢0 meV through the Stark effect, and exhibit a sizable binding energy of ~8⁢1 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding 1⁢0 μ⁢m, which can be attributed, in part, to their dipolar repulsive interactions. Further, spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. Furthermore, the formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.

2-dimensional systems↗
DOE OSTI2022

Characterization of Multi-Material Interfaces Within Fibrous Structures (CRADA Final Report)

This project aimed to characterize the electrical, ionic, and thermal material properties of printed materials onto various textile and leather substrates. Furthermore, the material interfaces were investigated as well via characterization techniques such as SEM, TEM, and FTIR for example. Results from these studies will be utilized to properly formulate and tune process variables for enhancing the durability of devices and mitigate risks during commercial scale manufacturing studies of interest to Funxion’s product development.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to –0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.

Electrical properties and parameters↗
DOE OSTI2023

Investigation of Reactive Silver Ink Formula for Reduced Silver Consumption in Silicon Heterojunction Metallization

Silver is the most expensive non-silicon component in photovoltaic cells. This is particularly salient for silicon heterojunction (SHJ) cells, which rely on large quantities of low-temperature silver pastes (LT-SP). SHJ cells would benefit greatly from an industrially scalable metallization process that simultaneously offers low silver consumption, low finger resistivities (<20 μΩ·cm), and low processing temperatures. Printed reactive silver inks (RSI) are an innovative candidate to this end. Furthermore, this work furthers the research on RSI metallization by investigating the impact of ink formula on properties pertinent to SHJ cells, including electrical properties, line width, ink splatter, silver consumption, cell performance, and adhesion. We introduce a scalable, high-throughput flexible needle contact printing approach for metallization that solves many of the issues associated with drop-on-demand printing. The printed silver fingers are characterized using electrical measurements and top-down and cross-sectional microscopy. The best performing ink, consisting of silver acetate, ethylamine, and formic acid, achieved silver fingers with total resistivities of 3.1 μΩ·cm and contact resistivities of 3.2 mΩ·cm 2 when printed at 61 °C. This ink metallized a full-sized 156 mm × 156 mm SHJ cell. This is the first reported data for RSI metallization of a full-sized SHJ cell and shows how an optimized RSI can achieve similar performances to LT-SP while consuming 80–90% less silver.

14 SOLAR ENERGY↗
DOE OSTI2023

High-Throughput Electric-Field-Assisted Sintering and Characterization Techniques for Materials Discovery

Despite improvements in computing and modeling capabilities, the performance of new materials, particularly those which deviate greatly in composition from well-studied materials (e.g., high-entropy alloys), can be difficult to simulate given the lack of available experimental property data. While some modeling techniques may attempt to predict the properties of these exotic materials, most are forced to make extrapolations from more traditional materials. To fulfill the need for accelerated material synthesis and property measurement, a high-throughput methodology has been developed. Utilizing electric-field-assisted sintering (EFAS), also known as spark plasma sintering (SPS), equipped with custom tooling, samples of differing alloy compositions can be produced simultaneously as a single alloy array. Several arrays have been produced with compositions spanning the Co-Cr-Fe-Mn-Ni alloy family, including many high-entropy alloys, while the novel array geometry has enabled the samples to be polished and characterized in parallel, using X-ray diffraction, scanning-electron microscopy, and laser-based thermal diffusivity measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Conductivity and Transference Number Determination Protocols for Solid Oxide Cell Materials

To standardize materials and component characterization for next generation hydrogen production and energy generation solid oxide cell (SOC) technologies, test protocols are being established to facilitate comparison across the numerous laboratories and research institutions where SOC development for application in solid oxide fuel cells (SOFCs) and solid oxide electrolyzes cells (SOEC) is conducted. This paper proposes guiding protocols for fundamental electrical properties characterization of SOC materials, including temperature- and oxygen partial pressure (pO 2 )-dependent conductivity measurements, and use of the electromotive force for determining the transference numbers, or contributions of each charge carrier (i.e., ions and electrons), to the total conductivity. The protocol for Archimedes density measurements is also provided as an integral technique to both of these methods.

25 ENERGY STORAGE↗
DOE OSTI2024

Self‐Potential Tomography Preconditioned by Particle Swarm Optimization—Application to Monitoring Hyporheic Exchange in a Bedrock River

Abstract A self‐potential (SP) data‐inversion algorithm was developed and tested on an analytical model of electrical‐potential profile data attributed to single and multiple polarized electrical sources. The developed algorithm was then validated by an application to SP‐monitoring field data measured on the floodplain of East Fork Poplar Creek, Oak Ridge, Tennessee, to image electrical sources in areas conducive to preferential flow into the flood plain from the bedrock‐lined riverbed. The algorithm combined stochastic source‐localization by particle‐swarm‐optimization (PSO) of electrical sources characterized by simplified geometries with source tomography by regularized weighted least‐squares minimization of a quadratic objective function. Prior information was incorporated by preconditioning the tomography algorithm by PSO results. Variable percentages of random noise were added to analytical‐model data to evaluate the algorithm performance. Results indicated that true parameters of single‐source models were inverted and approximated with small residual error, whereas inversion of analytical‐model data representing multiple electrical sources accurately approximated the locations of the sources but miscalculated some parameters because of the non‐uniqueness of the inverse‐model solution. Source tomography applied to analytical model data during testing produced a spatially continuous parameter field that identified the locations of point‐scale synthetic dipole sources of electrical current flow with varying degrees of accuracy depending on the prior information incorporated into the tomography. When applied to SP‐monitoring field data, the algorithm imaged electrical sources within a known fault that intersects the bedrock riverbed and flood plain of East Fork Poplar Creek and depicted dynamic electrical conditions attributed to hyporheic exchange.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Rugged WBG Devices and Advanced Electric Machines for High Power Density Automotive Electric Vehicles

This work explored two very important approaches for supporting transportation electrification and reducing dependence on imports of critical materials. In the first task, several novel electric machine architectures with low rare earth metal content were compared analytically, then experimentally to verify their performance. Rare earth metals are imported largely from China and are widely used in many clean energy systems such as wind turbines and EV motors. Reducing our dependence on this critical material is an important objective for ensuring our independence and continued economic prosperity. In the second task, a GaN based inverter for EV inverters was developed to demonstrate the suitability of that wide bandgap semiconductor device in this important application.

42 ENGINEERING↗