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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Ground testing of array modules for the photovoltaic array space power (PASP) experiment

One of the objectives of the PASP experiment is the verification of cost-effective ground simulations of high-voltage solar array/space-environment interactions by comparing the results with flight data. These ground tests consist of electrical characterization, thermal cycling, and plasma chamber simulations. The results of the latter tests are reported. Five array modules which are representative of the flight arrays were tested. The module types are planar silicon, planar gallium arsenide, planar silicon passivated with an integrally deposited cover glass, mini-Cassegrainian concentrator, and SLATS concentrator. The modules were biased to -1000 V in varying plasma densities from 4 x 103 to 2 x 105 e-/cu cm. Each array was tested in both dark and illuminated conditions with a load resistance. In addition to monitoring arcing during the plasma tests, the arrays were visually inspected and electrically characterized before and after exposure in the chamber. The electrical results are tabulated and briefly discussed.

Morris, Robert K.↗
NASA NTRS1989

Characterizations of electrical properties of highT(sub c) superconducting materials

The automated data acquisition system developed in the Space Science Laboratory at Marshall Space Flight Center for measuring electrical properties of high temperature superconductors is described. The acquisition system, consisting of a computer and computer-controlled hardware, allows large numbers of voltage, current, temperature, and magnetic measurements to be performed on bulk and thin film samples. Typical results are shown characterizing transition temperature (T sub c), critical current density (J sub c), and magnetic properties of bulk high T(sub c) materials as a function of temperature.

Sisk, R. C.↗
DOE OSTI2023

Microstructure characterization of electric field assisted sintering (EFAS) sintered metallic and ceramic materials using local thermal diffusivity measurement

Electric Field Assisted Sintering (EFAS, also referred to as spark plasma sintering) is a powerful technology for the consolidation of powder materials. The high heating rate during the sintering process is critical for minimizing energy consumption, but it can also cause microstructure heterogeneities in sintered parts, such as spatially varied porosity. The examination of localized porosity usually requires the use of a scanning electron microscope with a carefully prepared surface. In this paper, photothermal radiometry is used to measure local thermal diffusivity and extract localized porosity of EFAS-sintered parts by using a percolation-threshold model. Applying this approach, we identified the radial position-dependent porosity variation in EFAS parts, which is likely formed due to the large temperature gradient during the sintering process. This approach has a unique advantage because it can measure samples with minimal or no surface preparation, enabling the possibility of in situ characterization in EFAS with proper system modification. Necessary modifications on the measurement approach for EFAS deployment and in situ characterization are also discussed.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Characterization of electrical discharges on Teflon dielectrics used as spacecraft thermal control

The dual effects of system degradation and reduced life of synchronous-orbit satellites as a result of differential spacecraft charging underscore the need for a clearer understanding of the prevailing electrical discharge phenomena. In a laboratory simulation, the electrical discharge current, surface voltage, emitted particle fluxes, and photo-emission associated with discharge events on electron beam irradiated silver-backed Teflon samples were measured. Sample surface damage was examined with optical and electron beam microscopes. The results are suggestive of a model in which the entire sample surface is discharged by lateral sub-surface currents flowing from a charge deposition layer through a localized discharge channel to the back surface of the sample. The associated return current pulse appears to have a duration which may be a signature by which different discharge processes may be characterized.

Yadlowsky, E. J.↗
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Uncertainty Analysis of Seebeck Coefficient and Electrical Resistivity Characterization

In order to provide a complete description of a materials thermoelectric power factor, in addition to the measured nominal value, an uncertainty interval is required. The uncertainty may contain sources of measurement error including systematic bias error and precision error of a statistical nature. The work focuses specifically on the popular ZEM-3 (Ulvac Technologies) measurement system, but the methods apply to any measurement system. The analysis accounts for sources of systematic error including sample preparation tolerance, measurement probe placement, thermocouple cold-finger effect, and measurement parameters; in addition to including uncertainty of a statistical nature. Complete uncertainty analysis of a measurement system allows for more reliable comparison of measurement data between laboratories.

Seebeck effect↗
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
NASA NTRS1992

Characterization of electric thruster plumes using multiplexed laser induced fluorescence measurements

The use of laser-induced fluorescence to obtain spatially resolved measurements of propellant velocities and temperatures in electric thruster plumes is discussed, with emphasis on two innovations of the technique, namely simultaneous recording of the optogalvanic signal in a hollow cathode lamp for the purpose of calibrating Doppler shifts, and two-beam multiplexing to allow the measurement of two velocity components at once. It is also shown how information on plume fluctuations can be obtained from the multiplxed LIF data. The techniques are demonstrated on the plume from a low power arcjet, operated on argon, and its extension to the measurement of ion velocities in electrostatic ion thrusters and stationary plasma thrusters is discussed.

Ruyten, W. M.↗
NASA NTRS1992

On-orbit characterization of electric propulsion on LEO satellites

Utilizing commercial or military satellites as testbeds for subsystems is a potential platform for small devices. Electric propulsion is a viable and upcoming subsystem that is of high interest to planetary mission engineers as well as commercial satellite developers. It is proposed that by incorporating small lightweight electric propulsion devices onto small satellites as external or 'bolt-on' experiments, an increase in the number of flight opportunities can occur. Specific problems are spacecraft body interaction, contamination effects, thermal interface problems, power conditioning control electronics, and propulsion feed system interfaces.

Barnhart, D.↗
NASA NTRS1977

JAN transistor and diode characterization test program

A statistical summary of electrical characterization was performed on JAN diodes and transistors. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point and highest reading.

Takeda, H.↗
NASA NTRS1975

Study of materials for space processing

Materials were selected for device applications and their commercial use. Experimental arrangements were also made for electrical characterization of single crystals using electrical resistivity and Hall effect measurements. The experimental set-up was tested with some standard samples.

Lal, R. B.↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
NASA NTRS1977

JAN transistor and diode characterization test program, JANTX diode 1N5623

A statistical summary of the electrical characterization of diodes and transistors is presented. Each parameter is presented with test conditions, mean, standard deviation, lowest reading, 10% point (where 10% of all readings are equal to or less than the indicated reading), 90% point (where 90% of all readings are equal to or less than indicated reading) and the highest reading.

Takeda, H.↗
NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗
NASA NTRS2011

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

John, Caroline S.↗
DOE OSTI2023

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

2D electronics↗
DOE OSTI2022

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗