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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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71 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Scaling and Single Event Effects (SEE) Sensitivity

This paper begins by discussing the potential for scaling down transistors and other components to fit more of them on chips in order to increasing computer processing speed. It also addresses technical challenges to further scaling. Components have been scaled down enough to allow single particles to have an effect, known as a Single Event Effect (SEE). This paper explores the relationship between scaling and the following SEEs: Single Event Upsets (SEU) on DRAMs and SRAMs, Latch-up, Snap-back, Single Event Burnout (SEB), Single Event Gate Rupture (SEGR), and Ion-induced soft breakdown (SBD).

Oldham, Timothy R.↗
NASA NTRS2002

Gilgamesh: A Multithreaded Processor-In-Memory Architecture for Petaflops Computing

Processor-in-Memory (PIM) architectures avoid the von Neumann bottleneck in conventional machines by integrating high-density DRAM and CMOS logic on the same chip. Parallel systems based on this new technology are expected to provide higher scalability, adaptability, robustness, fault tolerance and lower power consumption than current MPPs or commodity clusters. In this paper we describe the design of Gilgamesh, a PIM-based massively parallel architecture, and elements of its execution model. Gilgamesh extends existing PIM capabilities by incorporating advanced mechanisms for virtualizing tasks and data and providing adaptive resource management for load balancing and latency tolerance. The Gilgamesh execution model is based on macroservers, a middleware layer which supports object-based runtime management of data and threads allowing explicit and dynamic control of locality and load balancing. The paper concludes with a discussion of related research activities and an outlook to future work.

management locality load balance↗
NASA NTRS1997

An Assessment of a Beowulf System for a Wide Class of Analysis and Design Software

A typical Beowulf system, such as the machine at the Jet Propulsion Laboratory (JPL), may comprise 16 nodes interconnected by 100 base T Fast Ethernet. Each node may include a single Inter Pentium Pro 200 MHz microprocessor, 128 MBytes of DRAM, 2.5 GBytes of IDE disk, and PCI bus backplane, and an assortment of other devices.

Beowulf System↗
NASA NTRS1995

Impact of CMOS Scaling on Single-Event Hard Errors in Space Systems

Applications of highly scaled devices in space applications are shown to be limited by hard errors from cosmic rays. Hard errors were first observed in 0.8 (micro)m DRAMs. For feature sizes below 0.5 (micro)m, scaling theory predicts that low power devices will have much lower hard error rates than devices optimized for high speed.

CMOS Scaling↗
NASA NTRS2002

Dosimetry and microdosimetry using COTS ICs: A comparative study

A new method using an array of MOS transistors formeasuring dose absorbed from ionizing radiation is compared to previous dosimetric methods., The accuracy and precision of dosimetry based on COTS SRAMs, DRAMs, and WPROMs are compared and contrasted. Applications of these devices in various space missions will be discussed. TID results are presented for this summary and microdosimetricresults will be added to the full paper. Finally, an analysis of the optimal condition for a digital dosimeter will be presented.

microdosimetry↗
NASA NTRS2009

G(sup 4)FET Implementations of Some Logic Circuits

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET

Mojarradi, Mohammad↗
NASA NTRS2006

Very High-Speed Digital Video Capability for In-Flight Use

digital video camera system has been qualified for use in flight on the NASA supersonic F-15B Research Testbed aircraft. This system is capable of very-high-speed color digital imaging at flight speeds up to Mach 2. The components of this system have been ruggedized and shock-mounted in the aircraft to survive the severe pressure, temperature, and vibration of the flight environment. The system includes two synchronized camera subsystems installed in fuselage-mounted camera pods (see Figure 1). Each camera subsystem comprises a camera controller/recorder unit and a camera head. The two camera subsystems are synchronized by use of an MHub(TradeMark) synchronization unit. Each camera subsystem is capable of recording at a rate up to 10,000 pictures per second (pps). A state-of-the-art complementary metal oxide/semiconductor (CMOS) sensor in the camera head has a maximum resolution of 1,280 1,024 pixels at 1,000 pps. Exposure times of the electronic shutter of the camera range from 1/200,000 of a second to full open. The recorded images are captured in a dynamic random-access memory (DRAM) and can be downloaded directly to a personal computer or saved on a compact flash memory card. In addition to the high-rate recording of images, the system can display images in real time at 30 pps. Inter Range Instrumentation Group (IRIG) time code can be inserted into the individual camera controllers or into the M-Hub unit. The video data could also be used to obtain quantitative, three-dimensional trajectory information. The first use of this system was in support of the Space Shuttle Return to Flight effort. Data were needed to help in understanding how thermally insulating foam is shed from a space shuttle external fuel tank during launch. The cameras captured images of simulated external tank debris ejected from a fixture mounted under the centerline of the F-15B aircraft. Digital video was obtained at subsonic and supersonic flight conditions, including speeds up to Mach 2 and altitudes up to 50,000 ft (15.24 km). The digital video was used to determine the structural survivability of the debris in a real flight environment and quantify the aerodynamic trajectories of the debris.

Corda, Stephen↗
NASA NTRS2012

Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere with the satellite s primary mission.

MacLeod, Todd↗
NASA NTRS2013

Memory Circuit Fault Simulator

Spacecraft are known to experience significant memory part-related failures and problems, both pre- and postlaunch. These memory parts include both static and dynamic memories (SRAM and DRAM). These failures manifest themselves in a variety of ways, such as pattern-sensitive failures, timingsensitive failures, etc. Because of the mission critical nature memory devices play in spacecraft architecture and operation, understanding their failure modes is vital to successful mission operation. To support this need, a generic simulation tool that can model different data patterns in conjunction with variable write and read conditions was developed. This tool is a mathematical and graphical way to embed pattern, electrical, and physical information to perform what-if analysis as part of a root cause failure analysis effort.

Sheldon, Douglas J.↗
NASA NTRS2013

MRAM Technology Status

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Heidecker, Jason↗
NASA NTRS2016

Probabilistic Damage Characterization Using the Computationally-Efficient Bayesian Approach

This work presents a computationally-ecient approach for damage determination that quanti es uncertainty in the provided diagnosis. Given strain sensor data that are polluted with measurement errors, Bayesian inference is used to estimate the location, size, and orientation of damage. This approach uses Bayes' Theorem to combine any prior knowledge an analyst may have about the nature of the damage with information provided implicitly by the strain sensor data to form a posterior probability distribution over possible damage states. The unknown damage parameters are then estimated based on samples drawn numerically from this distribution using a Markov Chain Monte Carlo (MCMC) sampling algorithm. Several modi cations are made to the traditional Bayesian inference approach to provide signi cant computational speedup. First, an ecient surrogate model is constructed using sparse grid interpolation to replace a costly nite element model that must otherwise be evaluated for each sample drawn with MCMC. Next, the standard Bayesian posterior distribution is modi ed using a weighted likelihood formulation, which is shown to improve the convergence of the sampling process. Finally, a robust MCMC algorithm, Delayed Rejection Adaptive Metropolis (DRAM), is adopted to sample the probability distribution more eciently. Numerical examples demonstrate that the proposed framework e ectively provides damage estimates with uncertainty quanti cation and can yield orders of magnitude speedup over standard Bayesian approaches.

Warner, James E.↗
NASA NTRS2013

MRAM Technology Status

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as “spintronics.” The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Heidecker, Jason↗
NASA NTRS2018

Radiation Performance of Memory Technologies for Space Applications

MRAM and DRAM memory technologies identified for possible radiation hardening were investigated for memory-array- and controller-level radiation sensitivity. TID and SEE performance of memory arrays and associated cells is good, but with some questions about viability of hardening of problematic control circuitry. Control-circuitry-related SEE problems are highlighted. TID data are focused on memory arrays only.

Some, Raphael↗
NASA NTRSDate not supplied

Dragonfly mass spectrometer titan environment optical damage testing

The Dragonfly Mass Spectrometer (DraMS) being developed at NASA’s Goddard Space Flight Center will use a solid-state 266-nm pulsed Nd:YAG laser perform compositional analysis on the surface of Titan. Due to the high fluence of the focused pulse energy on the laser’s beam steering unit (BSU) and the mass spectrometer window, the damage threshold of these optics in a Titan atmosphere needed to be characterized. This paper details the test setup and the successful demonstration of testing the highest fluence optics for the expected mission duration of 2 million laser pulses in a Titan-relevant atmosphere.

Matt Mullin↗
NASA NTRSDate not supplied

Damage Threshold Testing of UV Optics Under a Titan Environment for NASA’s Dragonfly Mission

The Dragonfly Mass Spectrometer (DraMS) being developed at NASA’s Goddard Space Flight Center will use a solid-state 266-nm pulsed Nd:YAG laser to perform compositional analysis on the surface of Titan. Due to the high fluence of the focused pulse energy on the laser’s beam steering unit (BSU) and the mass spectrometer window, the damage threshold of these optics in a Titan atmosphere needed to be characterized. This paper details the test setup and the successful demonstration of testing the highest fluence optics for the expected mission duration of 2 million laser pulses in a Titan-relevant atmosphere.

Paul R Stysley↗
NASA NTRS2004

Dynamic SDRAM SEFI Detection and Recovery Test Results

Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm(exp 2)/mg and the saturated cross section is 6 x 10(exp -5)cm(exp 2). Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.

radiation effects↗