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At least 73 records · Page 4

Dislocation loop evolution in F/M steel T91 under in-situ ion irradiation: Influence of the presence of initial dislocations

Ferritic/Martensitic (F/M) steel T91 was irradiated in-situ to 4 and 10 dpa at 470 °C using 1 MeV Kr 2+ . Additionally, the microstructure evolution under irradiation was followed and characterized by in-situ Transmission Electron Microscopy (TEM), in terms of dislocation loop Burgers vector, average size and density as a function of dose. Furthermore, the influence of the presence of dislocations in the pre-irradiated matrix was investigated by comparing the radiation induced defect evolution in grains with and without initial dislocations.

36 MATERIALS SCIENCE↗

Dislocation interactions in olivine control postseismic creep of the upper mantle

Changes in stress applied to mantle rocks, such as those imposed by earthquakes, commonly induce a period of transient creep, which is often modelled based on stress transfer among slip systems due to grain interactions. However, recent experiments have demonstrated that the accumulation of stresses among dislocations is the dominant cause of strain hardening in olivine at temperatures ≤600 °C, raising the question of whether the same process contributes to transient creep at higher temperatures. Here, we demonstrate that olivine samples deformed at 25 °C or 1150–1250 °C both preserve stress heterogeneities of ~1 GPa that are imparted by dislocations and have correlation lengths of ~1 μm. The similar stress distributions formed at these different temperatures indicate that accumulation of stresses among dislocations also provides a contribution to transient creep at high temperatures. The results motivate a new generation of models that capture these intragranular processes and may refine predictions of evolving mantle viscosity over the earthquake cycle.

58 GEOSCIENCES↗

Nucleation of dislocations and their dynamics in layered oxide cathode materials during battery charging

Lithium-rich layered oxides (LRLO) are among the leading candidates for the next-generation cathode material for energy storage, delivering 50% excess capacity over commercially used compounds. Despite excellent prospects, voltage fade has prevented effective use of the excess capacity, and a major challenge has been a lack of understanding of the mechanisms underpinning the voltage fade. Here, using operando three-dimensional Bragg coherent diffractive imaging, we directly observe the nucleation of a mobile dislocation network in LRLO nanoparticles. The dislocations form more readily in LRLO as compared with a classical layered oxide, suggesting a link between the defects and voltage fade. We show microscopically how the formation of partial dislocations contributes to the voltage fade. The insights allow us to design and demonstrate an effective method to recover the original high-voltage functionality. Furthermore, our findings reveal that the voltage fade in LRLO is reversible and call for new paradigms for improved design of oxygen-redox active materials.

25 ENERGY STORAGE↗

Twinning and Dislocation Evolution during Shock Compression and Release of Single Crystals: Real-Time X-Ray Diffraction

Determining the temporal evolution of twinning and/or dislocation slip, in real time (nanoseconds), in single crystals subjected to plane shock wave loading is a long-standing scientific need. Non-cubic crystals pose special challenges because they have many competing slip and twinning systems. Here, we report on time-resolved, in situ, synchrotron Laue x-ray diffraction measurements during shock compression and release of magnesium single crystals that are subjected to compression along the c-axis. Significant twinning was observed directly during stress release following shock compression; during compression, only dislocation slip was observed. Our measurements unambiguously distinguish between twinning and dislocation slip on nanosecond timescales in a shocked hexagonal-close-packed metal.

36 MATERIALS SCIENCE↗

Thermal effects in dislocation theory. II. Shear banding

The thermodynamic dislocation theory presented in previous papers is used in this paper to describe shear-banding instabilities. Central ingredients of the theory are a thermodynamically defined effective configurational temperature and a formula for the plastic strain rate determined by thermally activated depinning of entangled dislocations. This plastic strain rate is extremely sensitive to variations of the stress and the ordinary temperature. As a result of this sensitivity, the system undergoes rapid shear banding instabilities when ordinary thermal relaxation is slow. Finally, it also undergoes rapid changes from elastic to plastic behaviors at yielding transitions.

36 MATERIALS SCIENCE↗

The dissipation of inhomogeneous magnetic fields and the problem of coronae. I - Dislocation and flattening of flux tubes. II - The dynamics of dislocated flux

Attention is given to the dynamical dissipation arising in a magnetic field extending up through a tenuous atmosphere when an elemental flux tube in the field (1) is displaced from its equilibrium position and/or (2) is inflated by an internal fluid pressure different from the external fluid pressure. It is pointed out that as a consequence the tension in the lines of force of the ambient field flattens the dislocated tube so that the thickness of the tube decreases without limit and that the local field gradients increase rapidly with the passage of time until destroyed by one or more dissipative effects. The magnetic energy of a dislocated flux tube is therefore soon converted into thermal energy no matter how low the molecule resistivity of the fluid. Some formal illustrations of local conditions along a misaligned flux tube are presented, showing the simultaneous onset of diffusion, fluid motion, and hydromagnetic wave propagation. The examples demonstrate that the total effect is complicated and subject only to estimation, rather than formal calculation, at the present time.

Parker, E. N.↗

Lateral Movement of Screw Dislocations During Homoepitaxial Growth and Devices Yielded Therefrom Free of the Detrimental Effects of Screw Dislocations

The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are predetermined instead of random, which allows devices to be reproducibly patterned to avoid performance degrading crystal defects normally created by screw dislocations.

Philip G Neudeck↗

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗