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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Density functional studies of defects and defect-related luminescence in M g 3 N 2

M g 3 N 2 is a promising material for light-emitting-diode applications. However, the microscopic origin of the broad yellow photoluminescence in M g 3 N 2 remains unknown. In this study, defect properties and defect-related optical transitions are investigated based on the hybrid functional calculation. Our results show that the nitrogen vacancy introduces multiple localized defect states within the band gap, which play a dominant role in luminescent properties of M g 3 N 2 . Common impurities like hydrogen, oxygen, and carbon and their complexes with native defects are also studied. Compared with isolated V Mg , V Mg -H and V Mg – O N complexes have shallower transition levels. Our calculated optical excitation and emission peaks associated with isolated V N are in good agreement with those observed in experiments. In addition, the impurity C N is also a potential source for the observed yellow emission in M g 3 N 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Novel Solar Panel Defect Detection Hardware and Defect Analysis Software (CRADA Final Report)

The CRADA work involved 1) the development of a machine learning software architecture to automatically detect defects within Electroluminescence images of solar panels, and 2) demonstrations of the usefulness of UV Fluorescence (UVF) defect detection for a wide variety of defect types across many different solar panel technologies with different field or environmental chamber histories.

14 SOLAR ENERGY↗
DOE OSTI2018

Enhancing the photoresponse and photocatalytic properties of TiO 2 by controllably tuning defects across {101} facets

Introducing defects into semiconductors with well-controlled exposed facets offers an effective route for the development of photocatalytic materials with greatly improved properties. Here, we report a facile ethylene glycol reduction procedure to make anatase titanium dioxide (TiO 2 ) with different concentrations of exposed {001} and {101} facets, leading to different surficial defects. TiO 2 with increased concentrations of {101} facets shows a 5-fold improvement in photocurrent generation as well as improved photocatalytic activity towards water splitting under visible light irradiation. Thus, the improved activity is ascribed to the oxygen vacancies as well as the variable surface chemical states, which collectively induce a slower recombination rate of photo-induced electron-hole pairs. This work also highlights a feasible strategy to obtain the defective TiO 2 and explore the synergistic effect of surface defects and different concentrations of exposed {001} and {101} facets for photocurrent and photocatalytic properties under visible light irradiation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Influence of Hydrogen Isotopes on Vacancy Formation and Antisite Defect Diffusion in Palladium and Vanadium Metals

Density functional theory calculations are performed to study the interaction between hydrogen isotopes, vacancy, and antisite defects in Pd and V. Various defect configurations and defect-defect distances are systematically explored. Binding energies and migration energy barriers are calculated and tabulated. The study provides atomistic data for subsequent mesoscale simulations of tritium, vacancy, and antisite diffusion. In Pd, a strong binding is found between a vacancy and tritium (0.16 eV). This tritium binding increases the thermal concentration of vacancies by a factor of ~10 at 500 ?C. The increase in vacancy concentration enhances V antisite diffusion in Pd by a factor of ~6 at 500 ?C. The influence of tritium is even stronger in V, with a tritium and vacancy binding energy of 0.38 eV. Such a strong binding increases the thermal concentration of vacancies by a factor of ~300 at 500 ?C. The increase in vacancy concentration enhances Pd antisite diffusion in V by a factor of ~640 at 500 ?C. Vanadium and Pd exhibit a strong driving force to intermix with a formation energy of -1.57 eV for V antisite in Pd and -1.05 eV for Pd antisite in V. The results suggest vanadium diffusion into Pd is energetically stronger than the reverse. Zero-point-energy corrections are taken into account and calculations for hydrogen and tritium are presented.

Setyawan, Wahyu↗
DOE OSTI2020

Real-Time Defect Correction in Large-Scale Polymer Additive Manufacturing via Thermal Imaging and Laser Profilometer

Defects can result in a failed part and are costly in terms of time and material. This cost is even greater in the context of large-scale additive manufacturing where the objects can be very large. As a result, a great deal of research has focused on defect identification and mitigation. To address defects during object construction, researchers at Oak Ridge National Laboratory’s Manufacturing Demonstration Facility investigated an in-situ control system comprised of two sensors: a thermal camera and laser profilometer. This control system adjusted material flow and build speed to mitigate three types of defects: low layer times, underfill, and overfill. Several test objects were constructed. The control system was found to adjust build parameters to handle low layer times of approximately 15 seconds and height deviations from -100% underfill (the absence of a layer) to 50% overfill. Within two layers, height deviations could be returned to within 10% of the expected layer height. Further, preliminary results suggest the system can compensate for uneven build surfaces.

Borish, Michael↗
DOE OSTI2018

Aqueous Synthesis of Concave Rh Nanotetrahedra with Defect-Rich Surfaces: Insights into Growth-, Defect-, and Plasmon-Enhanced Catalytic Energy Conversion

The control of morphology in the synthesis of Rh nanocrystals can be used to precisely tailor the electronic surface structure; this in turn directly influences their performance in catalysis applications. Many works have brought attention to the development of Rh nanostructures with low-index surfaces, but limited effort has been devoted to the study of high-index and surface defect-enriched nanocrystals as they are not favored by thermodynamics because of the involvement of high-energy surfaces and increased surface-to-volume ratios. Here, we demonstrate an aqueous synthesis of concave Rh nanotetrahedra (CTDs) serving as efficient catalysts for energy conversion reactions. CTDs are surface defect-rich structures that form through a slow growth rate and follow the four-step model of metallic nanoparticle growth. Via the tuning of the surfactant concentration, the morphology of Rh CTDs evolved into highly excavated nanotetrahedra (HETDs) and twinned nanoparticles (TWs). Unlike the CTD surfaces with abundant adatoms and vacancies, HETDs and TWs have more regular surfaces with layered terraces. Each nanocrystal type was evaluated for methanol electrooxidation and hydrogen evolution from hydrolysis of ammonia borane, and the CTDs significantly showed the best catalytic performance because of defect enrichment, which benefits the surface reactivity of adsorbates. In addition, both CTDs and HETDs have strong absorption near the visible light region (382 and 396 nm), for which they show plasmon-enhanced performance in photocatalytic hydrogen evolution under visible light illumination. CTDs are more photoactive than HETDs, likely because of more pronounced localized surface plasmon resonance hot spots. Lastly, this facile aqueous synthesis of large-surface-area, defect-rich Rh nanotetrahedra is exciting for the fields of nanosynthesis and catalysis.

36 MATERIALS SCIENCE↗
DOE OSTI2018

α-Particle Detection and Charge Transport Characteristics in the A 3 M 2 I 9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)

Here, we have investigated the defect perovskites A 3 M 2 I 9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A 3 M 2 I 9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A 3 M 2 I 9 defect perovskites showed response to 241 Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility–lifetime product (μτ) e for electrons in these materials, with Rb 3 Bi 2 I 9 showing the lowest (μτ) e value of 1.7 × 10 – 6 cm 2 V –1 and Cs 3 Bi 2 I 9 the highest (μτ) e of 5.4 × 10 –5 cm 2 V –1 . The rise time of the α-particle-generated pulse was used to estimate the electron mobility μ e of the A 3 M 2 I 9 defect perovskites, which ranged from 0.32 cm 2 V –1 s–1 for Rb 3 Sb 2 I 9 to 4.3 cm 2 V –1 s –1 in Cs 3 Bi 2 I 9 . Similar analysis of the hole response spectra yielded (μτ) h values for each A 3 M 2 I 9 compound, with Cs 3 Bi 2 I 9 again showing the highest (μτ) h value of 1.8 × 10 –5 cm 2 V –1 , while Rb 3 Bi 2 I 9 showed the lowest (μτ) h with 2.0 × 10 –6 cm 2 V –1 . Rise time analysis gave hole mobilities ranging from 1.7 cm 2 V –1 s –1 for Cs 3 Bi 2 I 9 to 0.14 cm 2 V –1 s –1 for Cs 3 Sb 2 I 9 . Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron–phonon interactions. The α-particle response of the A 3 M 2 I 9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs 3 Bi 2 I 9 and Cs 3 Sb 2 I 9 showing the most promise.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

To investigate the electronic behavior and magnetic properties of NbFeSb, we have performed 93 Nb NMR, specific heat and magnetic measurements on NbFeSb samples heat treated at high temperatures. In this work, magnetic measurements combined with an observed Schottky anomaly and changes in the NMR line width indicate the presence of a 0.2% concentrated native magnetic defect in stoichiometric NbFeSb samples. The origin of these native defects is believed to be due to Fe antisites on Nb sites. In addition, NMR shift and spin–lattice relaxation results below 200 K reveal a Korringa-like response indicating heavily-doped p-type behavior due to native defects. Above 280 K, this converts to an activated behavior, indicating the presence of an impurity band, empty at low temperatures, which is located around 0.03 eV above the valence band maximum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Radiation defect dynamics in SiC with pre-existing defects

The influence of pre-existing lattice disorder on radiation defect dynamics in SiC remains unexplored. Here, we use a pulsed ion beam method to study dynamic annealing in Ar-ion-bombarded 3C-SiC at 200°C with different levels of pre-existing lattice disorder. Results reveal a nonmonotonic dependence of the defect relaxation time constant on the level of pre-existing disorder, exhibiting a maximum of ~4 ms at a level of relative initial disorder of ~0.4, while crystals without pre-existing damage are characterized by a time constant of ~1.4 ms. These observations demonstrate that radiation defect dynamics in SiC can be controlled by defect engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Correlative Characterization of Dislocation Defects and Defect Clusters in GaAs and CdTe Solar Cells by Spatially Resolved Optical Techniques and High-Resolution TEM

An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.

14 SOLAR ENERGY↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.↗
NASA NTRS1982

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗
DOE OSTI2018

Exciton photoluminescence and benign defect complex formation in zinc tin nitride

Emerging photovoltaic materials need to prove their viability by demonstrating excellent electronic properties. In ternary and multinary semiconductors, disorder and off-stoichiometry often cause defects that limit the potential for high-efficiency solar cells. We report on Zn-rich ZnSnN 2 (Zn/(Zn + Sn) = 0.67) photoluminescence, high-resolution X-ray diffraction, and electronic structure calculations based on Monte-Carlo structural models. The mutual compensation of Zn excess and O incorporation affords a desirable reduction of the otherwise degenerate n-type doping, but also leads to a strongly off-stoichiometric and disordered atomic structure. It is therefore remarkable that we observe only near-edge photoluminescence from well-resolved excitons and shallow donors and acceptors. Based on first principles calculations, this result is explained by the mutual passivation of Zn Sn and O N defects that renders both electronically benign. The calculated bandgaps range between 1.4 and 1.8 eV, depending on the degree of non-equilibrium disorder. The experimentally determined value of 1.5 eV in post-deposition annealed samples falls within this interval, indicating that further bandgap engineering by disorder control should be feasible via appropriate annealing protocols.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Novel Solar Panel Defect Detection Hardware and Defect Analysis Software (CRADA Final Report)

The CRADA work involved 1) the development of a machine learning software architecture to automatically detect defects within Electroluminescence images of solar panels, and 2) demonstrations of the usefulness of UV Fluorescence (UVF) defect detection for a wide variety of defect types across many different solar panel technologies with different field or environmental chamber histories.

14 SOLAR ENERGY↗