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Report describes state of art of tunable-diode-laser second-harmonic spectroscopy applied to measurements of concentrations of trace constituents of atmosphere. Combination of temperature, composition, and drive-current tuning, wavelengths of tunable diode lasers varied over infrared range of 3 to 30 micrometer, containing spectral lines of many molecules of interest in atmospheric research.
An analysis is conducted of the orbital decay of the Long Duration Exposure Facility (LDEF) satellite in order to develop an empirical model of the solar radio flux at 10.7 cm and of the exospheric temperature driving current atmospheric-density models at high radio fluxes. The Jacchia-Lineberry (1982) atmospheric model is used to fit a set of orbit semimajor axis observations to a predicted set whose only free variable was the exospheric temperature. A comparison of the exospheric temperatures with those predicted by the Jacchia (1977) model indicates increasing divergences above 1100 K, suggesting needed modifications to the model.
A self-consistent analysis of the quantum-well emission transistor (QWET) is presented allowing an exact calculation of the device quantum properties. Poisson's and Schroedinger's equation are solved numerically using a finite-difference method on a self-consistent basis. Pseudomorphic AlGaAs/InGaAs designs with 15-20 percent excess In are suggested for improving the device performance. Design with doping in various parts of the QWET are also studied. This analysis reveals that the device performance is less optimistic than previously predicted by analytic approaches. By introducing the pseudomorphic channel principle, while maintaining a reasonably low Al content for the gate and collector layers, it is, however, possible to obtain satisfactory performance. Optimum pseudomorphic designs showed high current driving capability (200,000 A/sq cm), high transconductance (3S/mm), and small intrinsic delay time (2 ps).
An experiment on the phase stability of an injection locked beam was done by using AlGaAs semiconductor lasers. The coherence of two beams from master and slave lasers was measured by interference between the beams in the Twymann-Green interferometer. The phase change of the output beam of the slave laser as a function of the driving current was measured in a Mach-Zehnder interferometer consisting of the master and slave lasers, and a value of 2.5 radians/mA was obtained.
Circuit suitable for automation or computer control of setup and operation. Hot-film or hot-wire anemometer circuit features individual current drives for two arms of wheatstone bridge, plus other features that provide improved calibration and automated or computer-controlled operation.
The goal of this project was to injection lock a 500 mW broad area laser diode (BAL) with a single mode low power laser diode with injection beam delivery through a single mode optical fiber (SMF). This task was completed successfully with the following significant accomplishments: (1) injection locking of a BAL through a single-mode fiber using a master oscillator and integrated miniature optics; (2) generation of a single-lobed, high-power far-field pattern from the injection-locked BAL that steers with drive current; and (3) a comprehensive theoretical analysis of a model that describes the observed behavior of the injection locked oscillator.
The research and development of electronic and electro-optic components for geosynchronous and low earth orbiting satellite optical high bandwidth communications at the NASA-Goddard Space Flight Center is reviewed. Intersatellite optical communications retains a strong reliance on microwave circuit technology in several areas - the microwave to optical interface, the laser transmitter modulation driver and the optical receiver. A microwave to optical interface is described requiring high bandwidth electronic downconverters and demodulators. Electrical bandwidth and current drive requirements for the laser modulation driver for three laser alternatives are discussed. Bandwidth and noise requirements are presented for optical receiver architectures.
The contractor attended the critical design review and evaluated the presentations of other team members and presented data on the inductive edge sensor. The prototype micro-chip inductive edge sensor was evaluated, and devices were found to have a number of characteristics which made them unsuitable for installation on the seven segment demonstrator. The amplifier bandwidth was too low, the output drive current was too small, and there is an interaction between the digital circuitry and the amplifier that causes the amplifier to stop functioning. Therefore, the inductive edge sensors were not installed on the seven segment demonstrator. The contractor has participated in instruction, problem analysis, and provided technical assistance to NASA and its contractors for the development of 8 hexagonal mirror faceplates with electronics and edge sensors.
We report a tunable, single frequency, narrow linewidth, pulsed laser diode transmitter at 935.68nm for remote sensing of atmospheric water vapor. The transmitter consists of a CW, tunable, external cavity diode laser whose output is amplified 2OdB using a tapered diode amplifier. The output is pulsed for range resolved DIAL lidar by pulsing the drive current to the diode amplifier at 4kHz with a .5% duty cycle. The output from the transmitter is 36OnJ/pulse and is single spatial mode. It maintains a linewidth of less than 25MHz as its wavelength is tuned across the water vapor absorption line at 935.68nm. The transmitter design and its use in a water vapor measurement will be discussed.
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.
New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.
The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.
In this work an electromagnetic model and subsequent design is presented for a traveling-wave, coplanar waveguide (CPW) based source that will operate in the THz frequency regime. The radio frequency (RF) driving current is a result of photoexcitation of a thin GaAs membrane using two frequency-offset lasers. The GaAs film is grown by molecular-beam-epitaxy (MBE) and displays sub-ps carrier lifetimes which enable the material conductivity to be modulated at a very high rate. The RF current flows between electrodes deposited on the GaAs membrane which are biased with a DC voltage source. The electrodes form a CPW and are terminated with a double slot antenna that couples the power to a quasi-optical system. The membrane is suspended above a metallic reflector to launch all radiation in one direction. The theoretical investigation and consequent design is performed in two steps. The first step consists of a direct evaluation of the magnetic current distribution on an infinitely extended coplanar waveguide excited by an impressed electric current distributed over a finite area. The result of the analysis is the difference between the incident angle of the laser beams and the length of the excited area that maximizes the RF power coupled to the CPW. The optimal values for both parameters are found as functions of the CPW and membrane dimensions as well as the dielectric constants of the layers. In the second step, a design is presented of a double slot antenna that matches the CPW characteristic impedance and gives good overall performance. The design is presently being implemented and measurements will soon be available.
We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.
The need for compact, solid-state actuation systems for use in the aerospace, automotive, and other transportation industries is currently driving research in high-temperature shape memory alloys (HTSMA) having transformation temperatures above 100 C. One of the basic high temperature systems under investigation to fill this need is NiTiPd. Prior work on this alloy system has focused on phase transformations and respective temperatures, no-load shape memory behavior (strain recovery), and tensile behavior for selected alloys. In addition, a few tests have been done to determine the effect of boron additions and thermomechanical treatment on the aforementioned properties. The main properties that affect the performance of a solid state actuator, namely work output, transformation strain, and permanent deformation during thermal cycling under load have mainly been neglected. There is also no consistent data representing the mechanical behavior of this alloy system over a broad range of compositions. For this thesis, ternary NiTiPd alloys containing 15 to 46 at.% palladium were processed and the transformation temperatures, basic tensile properties, and work characteristics determined. However, testing reveals that at higher levels of alloying addition, the benefit of increased transformation temperature begins to be offset by lowered work output and permanent deformation or "walking" of the alloy during thermal cycling under load. In response to this dilemma, NiTiPd alloys have been further alloyed with gold, platinum, and hafnium additions to solid solution strengthen the martensite and parent austenite phases in order to improve the thermomechanical behavior of these materials. The tensile properties, work behavior, and dimensional stability during repeated thermal cycling under load for the ternary and quaternary alloys were compared and discussed. In addition, the benefits of more advanced thermomechanical processing or training on the dimensional stability of these alloys during repeated actuation were investigated. Finally, the effect of quaternary alloying on the thermal stability of NiTiPdX alloys is determined via thermal cycling of the materials to increasing temperatures under load. It was found that solid solution additions of platinum and gold resulted in about a 30 C increase in upper use temperature compared to the baseline NiTiPd alloy, providing an added measure of over-temperature protection.
Optical injection locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface- emitting laser (VCSEL) that is an active element in the frequency-control loop of an opto-electronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency resonance. This particular optical-injection- locking scheme is expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. Inasmuch as the microwave power circulating in the frequency-control loop is a dynamic frequency-control variable (and, hence, cannot be stabilized), there arises a need for another means of stabilizing the wavelength. The present optical-injection-locking scheme satisfies the need for a means to stabilize the wavelength against microwave- power fluctuations. It is also expected to afford stabilization against temperature and current fluctuations. In an experiment performed to demonstrate this scheme, wavelength locking was observed when about 200 W of the output power of a commercial tunable diode laser was injected into a commercial VCSEL, designed to operate in the wavelength range of 795+/-3 nm, that was generating about 200 microW of optical power. (The use of relatively high injection power levels is a usual practice in injection locking of VCSELs.)
A method of dynamic self-locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface-emitting laser (VCSEL) that is an active element in the frequency-control loop of an optoelectronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency (EIT) resonance. This scheme can be considered an alternative to the one described in Optical Injection Locking of a VCSEL in an OEO (NPO-43454), NASA Tech Briefs, Vol. 33, No. 7 (July 2009), page 33. Both schemes are expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. To recapitulate from the cited prior article: In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. This concludes the background information. From the perspective that led to the conception of the optical injection-locking scheme described in the cited prior article, the variation of the VCSEL wavelength with the microwave power circulating in the frequency-control loop is regarded as a disadvantage and optical injection locking is a solution of the problem of stabilizing the wavelength in the presence of uncontrolled fluctuations in the microwave power. The present scheme for dynamic self-locking emerges from a different perspective, in which the dependence of VCSEL wavelength on microwave power is regarded as an advantageous phenomenon that can be exploited as a means of controlling the wavelength. The figure schematically depicts an atomic-clock OEO of the type in question, wherein (1) the light from the VCSEL is used to excite an EIT resonance in selected atoms in a gas cell (e.g., 87Rb atoms in a low-pressure mixture of Ar and Ne) and (2) the power supplied to the VCSEL is modulated by a microwave signal that includes components at beat frequencies among the VCSEL wavelength and modulation sidebands. As the VCSEL wavelength changes, it moves closer to or farther from a nearby absorption spectral line, and the optical power transmitted through the cell (and thus the loop gain) changes accordingly. A change in the loop gain causes a change in the microwave power and, thus, in the VCSEL wavelength. It is possible to choose a set of design and operational parameters (most importantly, the electronic part of the loop gain) such that the OEO stabilizes itself in the sense that an increase in circulating microwave power causes the VCSEL wavelength to change in a direction that results in an increase in optical absorption and thus a decrease in circulating microwave power. Typically, such an appropriate choice of operational parameters involves setting the nominal VCSEL wavelength to a point on the shorter-wavelength wing of an absorption spectral line.