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At least 73 records · Page 4

The nontrivial effects of annealing on superconducting properties of Nb single crystals

The effect of annealing on the superconducting properties of niobium single crystals was studied using optical, magnetic, and scanning tunneling microscopy (STM) methods. Pieces of the same crystal boule were studied before and after the annealing at 800 ${^\circ}\textrm{C}$, 1400 ${^\circ}\textrm{C}$, and near the melting point of niobium (2477 ${^\circ}\textrm{C}$). The initial samples had a high hydrogen content and low-temperature imaging revealed large hydrides (hundreds of micrometers) appearing below 190 K. The formation of these large precipitates is already completely suppressed by annealing at 800 ${^\circ}\textrm{C}$. However, the overall superconducting properties of the annealed samples did not improve and, in fact, worsened. In particular, the superconducting transition temperature decreased, the upper critical field increased, and the pinning strength increased. In the STM study, the sample was annealed initially at 400 ${^\circ}\textrm{C}$, measured, annealed at 1700 ${^\circ}\textrm{C}$, and measured again. The STM revealed a ‘dirty’ superconducting gap with a significant spatial variation in tunneling conductance after annealing at 400 ${^\circ}\textrm{C}$. The clean gap was recovered after annealing at 1700 ${^\circ}\textrm{C}$. This is likely due to oxygen redistribution near the surface, which is always covered by oxide layers in as-grown crystals. Our results indicate that vacuum annealing at least up to 1400 ${^\circ}\textrm{C}$, while removing a large percentage of hydrogen, introduces additional nanosized defects, likely hydride precipitates, that act as efficient pair-breaking and pinning centers. The dimensionless scattering rate is estimated to have increased from $\Gamma = 0.2$ to about $\Gamma = 0.4$ after annealing at 1400 ${^\circ}\textrm{C}$. These results on single crystals differ drastically from those obtained in polycrystalline bulk niobium (i.e. cut from superconducting radio-frequency cavities), where annealing is known to have a significant positive effect that is attributed to the improvement of the crystalline structure masking the more subtle influence of the hydrides.

43 PARTICLE ACCELERATORS↗

Superconductivity in WBe 2

WBe 2 , which occurs in space group 194, with hexagonal symmetry P6 3 /mmc, is prepared by arc-melting at temperatures above 2200 C, where Be vapor loss is significant. This study is motivated by recent work on MoB 2 and WB 2 , both superconductors (T c =32 and 17 K respectively) under high (∼70 GPa) pressure. In order to avoid the known Be-rich superconducting phases (WBe 13 and WBe 22 ) in the complex phase diagram, both known to be superconducting at 4.1 K, the sample was prepared with a slight (∼5 %) excess of W. The resultant sample, prepared using high purity (99.999 %) Be, is essentially single phase WBe 2 , with some spread in its superconducting properties due to the known homogeneity range. (WBe 2 forms in space group 194 between approximately W 1.02 Be 1.98 and W 0.88 Be 2.12 .) Characterization was carried out with x-ray diffraction, electrical resistivity, ρ, in zero and applied magnetic fields, and specific heat. The resistivity in zero and applied fields and specific heat data indicate that our sample of WBe 2 is a bulk superconductor at ambient pressure with a T c onset in ρ at 1.05 K, and T c (ρ→0) at ∼0.86 K. Furthermore, there is no signature of superconductivity in ρ at 4.1 K, indicating successful avoidance of WBe 13 and WBe 22 . The ρ data in field indicate an upper critical field of approximately 400 gauss.

Electrical transport↗

Efficiency-optimized relativistic plasma harmonics for extreme fields

Bright harmonic radiation from relativistically oscillating laser plasmas offers a direct route for generating extreme electromagnetic fields. Theory predicts that under optimized conditions, the plasma medium can support strong spatiotemporal compression of laser energy in a coherent harmonic focus (CHF), delivering intensity boosts many orders of magnitude greater than the incident driving laser pulse. Although diffraction-limited performance (spatial compression) and attosecond phase locking (temporal compression) have been demonstrated experimentally, efficient coupling of relativistically intense laser pulse energy into the emitted harmonic cone has not been realized so far. Here we demonstrate that this highly nonlinear interaction can be tailored to deliver the maximum conversion efficiencies predicted from simulations. By fine-tuning the temporal profile of the driving laser on sub-picosecond (<10 −12 s) timescales, energies >9 mJ between the 12th and 47th harmonics are observed. These results are in agreement with the theoretically expected efficiency dependence on harmonic order, verifying that optimal conditions have been achieved in the generation process. This is the important final element required to achieve the expected intensity boosts from a CHF in experiments. Although obtaining spatiotemporal compression and optimal efficiency simultaneously remains challenging, the path to realizing extreme optical field strengths approaching the critical field of quantum electrodynamics (the Schwinger limit at >10 16 V cm −1 or >10 29 W cm −2 ) is now open, permitting all-optical studies of the quantum vacuum and new frontiers for intense attosecond science.

High-harmonic generation↗

Simulations of Nb$_3$Sn Layer RF Field Limits Due to Thermal Impedance

Nb3Sn performance in RF fields is limited to fields far below its superheating critical field. Poor thermal conductivity of Nb3Sn has been speculated to be the reason behind this limit. In order to better understand the contribution of Nb3Sn thermal conductivity to its RF performance, we simulated numerically with Matlab program*(based on SRIMP and HEAT codes) thelimiting fields under different realistic conditions. Our simulations indicate that limiting fields observed presently in the experiments with RF fields cannot be explained by the thermal impedance of Nb3Sn alone. The results change significantly in the presence of higher losses due to extrinsic mechanisms.

43 PARTICLE ACCELERATORS↗

Effect of metal encapsulation on bulk superconducting properties of niobium thin films used in qubits

Niobium metal occupies nearly 100% of the volume of a typical 2D transmon device. While the aluminum Josephson junction is of utmost importance, maintaining quantum coherence across the entire device means that pair-breaking in Nb leads, capacitive pads, and readout resonators can be a major source of decoherence. The established contributors are surface oxides and hydroxides, as well as absorbed hydrogen and oxygen. Metal encapsulation of freshly grown surfaces with non-oxidizing metals, preferably without breaking the vacuum, is a successful strategy to mitigate these issues. While the positive effects of encapsulation are undeniable, it is important to understand its impact on the macroscopic behavior of niobium films. We present a comprehensive study of the bulk superconducting properties of Nb thin films encapsulated with gold and palladium/gold, and compare them to those of bare Nb films. Magneto-optical imaging, magnetization, resistivity, and London and Campbell penetration depth measurements reveal significant differences in encapsulated samples. Both sputtered, and epitaxial Au-capped films exhibit the highest residual resistivity ratio and superconducting transition temperature, as well as the lowest upper critical field, London penetration depth, and critical current. These results are in good agreement with the microscopic theory of anisotropic normal and superconducting states of Nb. We conclude that pair-breaking in the bulk of niobium films, driven by disorder throughout the film rather than just at the surface, is a significant source of quantum decoherence in transmons. We also conclude that gold capping not only passivates the surface but also affects the properties of the entire film, significantly reducing the scattering rate due to defects likely induced by surface diffusion if the film is not protected immediately after fabrication.

Datta, Amlan [Ames Lab; Iowa State U.]↗

Theory of the Kitaev model in a [111] magnetic field

Recent numerical studies indicate that the antiferromagnetic Kitaev honeycomb lattice model undergoes a magnetic-field-induced quantum phase transition into a new spin-liquid phase. This intermediate-field phase has been previously characterized as a gapless spin liquid. By implementing a recently developed variational approach based on the exact fractionalized excitations of the zero-field model, we demonstrate that the field-induced spin liquid is gapped and belongs to Kitaev’s 16-fold way. Specifically, the low-field non-Abelian liquid with Chern number C = ±1 transitions into an Abelian liquid with C = ±4. The critical field and the field-dependent behaviors of key physical quantities are in good quantitative agreement with published numerical results. Furthermore, we derive an effective field theory for the field-induced critical point which readily explains the ostensibly gapless nature of the intermediate-field spin liquid.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Field-induced transitions in the Kitaev material α - RuCl 3 probed by thermal expansion and magnetostriction

High-resolution thermal expansion and magnetostriction measurements were performed on single crystals of α - RuCl 3 in magnetic fields applied parallel to the Ru-Ru bonds. The length changes were measured in the direction perpendicular to the honeycomb planes. Here, our data show clear thermodynamic characteristics for the field-induced phase transition at the critical field μ 0 H c 1 = 7.8 ( 2 ) T where the antiferromagnetic zigzag order is suppressed. At higher fields, a kink in the magnetostriction coefficient signals an additional transition or crossover around μ 0 H c 2 ≈ 11 T . The extracted Grüneisen ratio shows typical hallmarks for quantum criticality near H c 1 but also displays anomalous behavior above H c 1 . We compare our experimental data with spin-wave calculations employing a minimal Kitaev-Heisenberg model in the semiclassical limit. Most of the salient features are in agreement with each other, however, the peculiar features in the region above H c 1 cannot be accounted for in our semiclassical modeling and hence suggest a genuine quantum nature. We construct a phase diagram for α - RuCl 3 in a magnetic field along the Ru-Ru bonds, displaying a zigzag ordered state below H c 1 , a quantum paramagnetic regime between H c 1 and H c 2 , and a semiclassical partially polarized state above H c 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Noncollinear spin order, field-induced transitions, and short-range correlations in Cu 4 ⁢SO 4 ⁢(OH) 6

We report a comprehensive study of spin-$\frac{1}{2}$ quantum magnet brochantite, Cu 4 ⁢SO 4 ⁢(OH) 6 , combining high-field thermodynamic measurements, polarized neutron diffraction, inelastic neutron scattering, and nuclear magnetic resonance spectroscopy. Using bulk magnetization and specific heat measurements we construct the magnetic 𝐻−𝑇 phase diagram for magnetic fields applied along main crystallographic directions up to 24.1 T. Polarized neutron diffraction reveals a noncollinear magnetic ground state confined to the 𝑎⁢𝑏 plane. A field-induced transition is observed for magnetic fields in the 𝑎⁢𝑏 plane whose critical field and character evolve continuously with field direction in the 𝑎⁢𝑏 plane. While the transition for 𝐻 ∥ 𝑏 might be a spin-flop-like transition, the one for 𝐻 ∥ 𝑎 resembles the short-range correlated state above 𝑇 N , suggesting a magnetic configuration related to the quasi-two-dimensional correlations in the 𝑏⁢𝑐 planes. The experimental results demonstrate that the ground-state and field-induced phases cannot be explained by a simple XXZ model with a single dominant exchange interaction and that weaker interchain and anisotropic interactions have to be taken into account. Our work establishes brochantite as a low-symmetry Cu-based quantum magnet with noncollinear order and complex field-induced behavior.

Prokhnenko, Oleksandr [Helmholtz-Zentrum Berlin (H↗

Quasi-one-dimensional Ising-like antiferromagnetism in the rare-earth perovskite oxide TbScO 3

The rare-earth perovskite TbScO 3 has been widely used as a substrate for the growth of epitaxial ferroelectric and multiferroic thin films, while its detailed low-temperature magnetic properties were rarely reported. In this paper, we performed detailed magnetization, specific heat, and single crystal neutron scattering measurements, along with the crystalline electric field calculations to study the low-temperature magnetic properties of TbScO 3. All our results suggest the magnetic Tb 3+ has an Ising-like pseudo-doublet ground state at low temperatures. Due to the constrain of local point symmetry, these Tb 3+ Ising moments are confined in the ab plane with a tilt angle of φ=±48° to the a axis. In zero field, the system undergoes an antiferromagnetic phase transition at T N =2.53 K, and forms a G x A y noncollinear magnetic structure below T N . Here, we find the dipole-dipole interactions play an important role to determine the magnetic ground state, which are also responsible for the quasi-one-dimensional magnetism in TbScO 3 . The significant anisotropic diffuse scatterings further confirm the quasi-one-dimensional magnetism along the c axis. The magnetic phase diagram with the field along the easy b axis is well established. In addition to the G x A y antiferromagnetic state, there is an exotic field-induced phase emerged near the critical field B c ≃0.7 T, where three-dimensional magnetic order is suppressed but strong one-dimensional correlations may still exist.

36 MATERIALS SCIENCE↗

Re-Assembly and Test of a COMB Dipole Magnet With STAR Wires

Rare-Earth Barium Copper Oxide (REBCO) coated conductors are an attractive option for application in high field accelerator magnets due to their high critical field and the convenience of fabrication without heat treatment compared to some other superconductors. A small REBCO accelerator magnet was previously fabricated and tested in liquid nitrogen, demonstrating over 90% critical current retention in the coils. This paper describes the magnet re-assembly with a different support structure and its test in liquid helium at 1.8–4.5 K. The magnet quench history along with the instrumentation data is presented and discussed.

43 PARTICLE ACCELERATORS↗

Development of a second COMB dipole magnet with STAR wires

Rare-Earth Barium Copper Oxide (REBCO) coated conductors are an attractive option for application in high-field accelerator magnets due to their high critical field and the convenience of fabrication without heat treatment compared to some other superconductors. Fermilab plays a vital role in superconducting accelerator magnet R&D under the framework of the U.S. Magnet Development Program. An integral part of that program is the accelerator magnet development based on REBCO conductors to demonstrate self-fields of 5 T or greater compatible with operation in hybrid configurations to generate fields beyond 16 T for future High Energy Physics (HEP) applications. A small, two-layer REBCO dipole magnet based on the Conductor on Molded Barrel (COMB) magnet technology, developed at Fermilab with Symmetric Tape Round (STAR®) wires from AMPeers LLC was recently fabricated and tested in liquid helium, demonstrating the design feasibility. A second dipole magnet based on the same technology is currently under development at Fermilab. The coil has a 60-mm clear bore and a 120-mm OD and consists of six layers of STAR® conductor, which allows to significantly increase the magnetic field compared to the previous design, and potentially probe the 5 T self-field target. This presentation reports the progress in the magnet development.

Kashikhin, Vadim [Fermilab]↗

Approaching the ultimate superconducting properties of (Ba,K)Fe 2 As 2 by naturally formed low-angle grain boundary networks

The most effective way to enhance the dissipation-free supercurrent in the presence of a magnetic field for type II superconductors is to introduce defects that act as artificial pinning centers (APCs) for vortices. For instance, the in-field critical current density of doped BaFe 2 As 2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion irradiation. The technique of ion irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains with widths of approximately 30–60 nm. The grains are rotated around the b- (or a-) axis by 1.5° and around the c-axis by –1°, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.

36 MATERIALS SCIENCE↗

Possible unconventional order parameter in single crystals of SrPt 3 P superconductor

Here, anisotropic properties of single crystals of SrPt 3 P were studied using London penetration depth and electrical resistivity measurements. The upper critical field, $H_{c2}(T)$, was determined from four-probe electrical resistivity measurements for three orthogonal directions of a magnetic field with respect to the crystal. The London penetration depth, $λ(T)$, was determined from the magnetic susceptibility of the Meissner–London state measured using a tunnel-diode resonator technique. Whereas $H_{c2}(T)$ and the normal-state $ρ(T)$ are practically identical for all three magnetic field orientations, the London penetration depth shows significant unidirectional anisotropy. The low-temperature $λ(T)$ is exponentially attenuated when a small excitation radiofrequency magnetic field, $H_{rf}$, is applied along the c"-direction, in which case screening currents flow in the a"b"-plane, while for the other two orientations, $H_{rf}$∥ a" and $H_{rf}$ ∥ b", the London penetration depth shows a much stronger, $λ(T)$ ~ T 2 , variation. Such unusual and contrasting behavior of the two anisotropies, $γ_{H}$(T) = $H_{c2}$/$H_{c2,c}$ = $ξ_{ab}$/$ξ_{c}$ and $γ_{λ}$(T) = $λ_{c}$\$λ_{ab'}$, imposes significant constraints on the possible order parameter. Although our measurements are insufficient to derive conclusively the superconducting gap anisotropy, the order parameter with two point nodes and a modulation in the perpendicular direction is qualitatively consistent with the experimental observations.

anisotropic superconducting gap↗

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗

Superconducting properties of commercially available solders for low-field applications

Solders with superconducting transitions around 4K are useful in low magnetic field environments for AC current leads or in electrical and mechanical bonds. Accurate knowledge of these solders’ superconducting properties is essential for improving high precision experiments. We have measured the electrical resistance of five commercially-available eutectic or near-eutectic solders: 50%Sn-50%Pb, 60%Sn-40%Pb, 60%Sn-40%Pb-0.3%Sb, 52%In-48%Sn, and 96.5%Sn-3.5%Ag, down to 2.3K and in applied magnetic fields from 0 to 0.1 T . We report critical temperatures T c (B), 90%–10% transition widths ΔT c , and zero-temperature critical fields B c,0 . Our best candidate for low-loss AC current wiring in low fields is 50%Sn-50%Pb, which has a zero-field T c,0 = 7.1K (with ΔT c = 0.6 K), and remained high at T c (0.1 T) = 6.9K (ΔT c = 0.6K ). We also report, for the first time, T c and B c of 60%Sn-40%Pb-0.3%Sb and B c,0 of 96.5%Sn-3.5%Ag. Our T c,0 - 3.31K (ΔT c = 0.08K) for 96.5%Sn-3.5%Ag disagrees with a widely adopted value.

Hickman, C. [North Carolina State University, Rale↗