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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Surrogate Optimization for Quantum Circuits

Variational quantum Eigensolvers are touted as a near-term algorithm capable of impacting many applications. However, the potential has yet to be realized with few claims of quantum advantage and high resource estimates mainly due to the need for optimization in the presence of noise. Finding algorithms and methods to improve the convergence is essential to accelerate the capabilities of near-term hardware for VQE or more broad applications of hybrid methods in which optimization is required. To this goal we look to use modern approaches recently developed in circuit simulations and stochastic classical optimization that can be combined in a surrogate optimization approach to classical circuits. Using an approximate state vector simulator, we efficiently calculate an approximate Hessian, fed as an input for a detailed quantum circuit simulator. We demonstrate the capabilities of such an approach with and without sampling noise. We also show that this method outperforms Powell in the presence of quantum circuit shot noise by a factor of 2-4

quantum computing↗
DOE OSTI2025

Surrogate optimization of variational quantum circuits

Variational quantum eigensolvers are touted as a near-term algorithm capable of impacting many applications. However, the potential has not yet been realized, with few claims of quantum advantage and high resource estimates, especially due to the need for optimization in the presence of noise. Finding algorithms and methods to improve convergence is important to accelerate the capabilities of near-term hardware for VQE or more broad applications of hybrid methods in which optimization is required. To this goal, we look to use modern approaches developed in circuit simulations and stochastic classical optimization, which can be combined to form a surrogate optimization approach to quantum circuits. Using an approximate (classical CPU/GPU) state vector simulator as a surrogate model, we efficiently calculate an approximate Hessian, passed as an input for a quantum processing unit or exact circuit simulator. This method will lend itself well to parallelization across quantum processing units. We demonstrate the capabilities of such an approach with and without sampling noise and a proof-of-principle demonstration on a quantum processing unit utilizing 40 qubits.

Gustafson, Erik J. [RIACS, Mtn. View] (ORCID:00000↗
NASA NTRS2025

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗
DOE OSTI2023

Partitioning Quantum Chemistry Simulations with Clifford Circuits

Current quantum computing hardware is restricted by the availability of only few, noisy qubits which limits the investigation of larger, more complex molecules in quantum chemistry calculations on quantum computers in the near term. Here, in this work, we investigate the limits of their classical and near-classical treatment while staying within the framework of quantum circuits and the variational quantum eigensolver. To this end, we consider naive and physically motivated, classically efficient product ansatz for the parametrized wavefunction adapting the separable-pair ansatz form. We combine it with post-treatment to account for interactions between subsystems originating from this ansatz. The classical treatment is given by another quantum circuit that has support between the enforced subsystems and is folded into the Hamiltonian. To avoid an exponential increase in the number of Hamiltonian terms, the entangling operations are constructed from purely Clifford or near-Clifford circuits. While Clifford circuits can be simulated efficiently classically, they are not universal. In order to account for missing expressibility, near-Clifford circuits with only few, selected non-Clifford gates are employed. The exact circuit structure to achieve this objective is molecule-dependent and is constructed using simulated annealing and genetic algorithms. We demonstrate our approach on a set of molecules of interest and investigate the extent of our methodology’s reach.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
DOE OSTI2022

Efficient Hierarchical State Vector Simulation of Quantum Circuits via Acyclic Graph Partitioning

Early but promising results in quantum computing have been enabled by the concurrent development of quantum algorithms, devices, and materials. Classical simulation of quantum programs has enabled the design and analysis of algorithms and implementation strategies targeting current and anticipated quantum device architectures. In this paper, we present a graph-based approach to achieve efficient quantum circuit simulation. Our approach involves partitioning the graph representation of a given quantum circuit into sub-graphs/circuits that exhibit better data locality. Simulation of each sub-circuit is organized hierarchically, with the iterative construction and simulation of smaller state vectors, improving overall performance. Also, this partitioning reduces the number of passes through data, improving the total computation time. We present three partitioning strategies and observe that acyclic graph partitioning typically results in the best time-to-solution. In contrast, other strategies reduce the partitioning time at the expense of potentially increased simulation times. Experimental evaluation demonstrates the effectiveness of our approach.

Fang, Bo↗
DOE OSTI2020

QTENSOR

QTensor is a quantum circuit simulator designed to run efficiently in parallel mode on large supercomputers. It is based on the tensor network representation of quantum circuits. The simulator is flexible and agnostic to both the connectivity map of the quantum device and the types of gates used in the circuit.

Alekseev, Yury↗
DOE OSTI2021

Design principles of tandem cascade photoelectrochemical devices

Cascade photoelectrocatalysis (PEC) is a possible method to improve the selectivity of solar-driven CO 2 reduction (CO 2 R). This concept can be realized by coupling different CO 2 R catalysts to different subcells in a multijunction photovoltaic (PV) stack. Efficient implementation will require careful tuning of the photocurrents and design of the photovoltages provided by the subcells to the CO 2 R catalysts in such a way as to facilitate the target reaction. Here, we outline the design principles of the tandem PEC approach using two-step conversion of CO 2 to ethylene in aqueous electrolyte, via a CO intermediate, as a model system. To perform this reaction, the first coupled PV-catalyst component should provide 4 electrons to reduce 2 molecules of CO 2 to CO; the second component should provide 8 electrons to reduce 2 CO molecules to C 2 H 4 . Based on known CO 2 R catalysts, the overpotential required to produce CO can be less than that required to reduce it to ethylene, creating the opportunity for improved efficiency. Cascade PEC can be realized in a three-terminal tandem (3TT) configuration using III–V-semiconductor based subcells coupled to Au (produces CO intermediate) and Cu (converts CO to ethylene). The current to each catalyst can be controlled by the area of the subcell exposed to the electrolyte, and the photovoltage is determined by the materials selected and device configuration. Operating conditions are found by simulating the coupled system using the open-source circuit simulator SPICE (Simulation Program with Integrated Circuits Emphasis). We identify conditions under which a 3TT configuration can have a higher solar to chemical conversion efficiency compared to a two-terminal two-junction tandem (2T 2J) with the same absorbers and a Cu catalyst only. We also show that 3TT PEC devices can be less sensitive to variations in catalyst activity compared to 2T devices. Lastly, we discuss the applications of cascade PEC to CO 2 reduction, using different intermediates, and to other chemical networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2013

Planar Superconducting Millimeter-Wave/Terahertz Channelizing Filter

This innovation is a compact, superconducting, channelizing bandpass filter on a single-crystal (0.45 m thick) silicon substrate, which operates from 300 to 600 GHz. This device consists of four channels with center frequencies of 310, 380, 460, and 550 GHz, with approximately 50-GHz bandwidth per channel. The filter concept is inspired by the mammalian cochlea, which is a channelizing filter that covers three decades of bandwidth and 3,000 channels in a very small physical space. By using a simplified physical cochlear model, and its electrical analog of a channelizing filter covering multiple octaves bandwidth, a large number of output channels with high inter-channel isolation and high-order upper stopband response can be designed. A channelizing filter is a critical component used in spectrometer instruments that measure the intensity of light at various frequencies. This embodiment was designed for MicroSpec in order to increase the resolution of the instrument (with four channels, the resolution will be increased by a factor of four). MicroSpec is a revolutionary wafer-scale spectrometer that is intended for the SPICA (Space Infrared Telescope for Cosmology and Astrophysics) Mission. In addition to being a vital component of MicroSpec, the channelizing filter itself is a low-resolution spectrometer when integrated with only an antenna at its input, and a detector at each channel s output. During the design process for this filter, the available characteristic impedances, possible lumped element ranges, and fabrication tolerances were identified for design on a very thin silicon substrate. Iterations between full-wave and lumped-element circuit simulations were performed. Each channel s circuit was designed based on the availability of characteristic impedances and lumped element ranges. This design was based on a tabular type bandpass filter with no spurious harmonic response. Extensive electromagnetic modeling for each channel was performed. Four channels, with 50-GHz bandwidth, were designed, each using multiple transmission line media such as microstrip, coplanar waveguide, and quasi-lumped components on 0.45- m thick silicon. In the design process, modeling issues had to be overcome. Due to the extremely high frequencies, very thin Si substrate, and the superconducting metal layers, most commercially available software fails in various ways. These issues were mitigated by using alternative software that was capable of handling them at the expense of greater simulation time. The design of on-chip components for the filter characterization, such as a broadband antenna, Wilkinson power dividers, attenuators, detectors, and transitions has been completed.

Ehsan, Negar↗
NASA NTRS1984

Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

Zoutendyk, J. A.↗
NASA NTRS2006

Development and Implementation of Non-Newtonian Rheology Into the Generalized Fluid System Simulation Program (GFSSP)

One of the goals of this program was to develop the experimental and analytical/computational tools required to predict the flow of non-Newtonian fluids through the various system components of a propulsion system: pipes, valves, pumps etc. To achieve this goal we selected to augment the capabilities of NASA's Generalized Fluid System Simulation Program (GFSSP) software. GFSSP is a general-purpose computer program designed to calculate steady state and transient pressure and flow distributions in a complex fluid network. While the current version of the GFSSP code is able to handle various systems components the implicit assumption in the code is that the fluids in the system are Newtonian. To extend the capability of the code to non-Newtonian fluids, such as silica gelled fuels and oxidizers, modifications to the momentum equations of the code have been performed. We have successfully implemented in GFSSP flow equations for fluids with power law behavior. The implementation of the power law fluid behavior into the GFSSP code depends on knowledge of the two fluid coefficients, n and K. The determination of these parameters for the silica gels used in this program was performed experimentally. The n and K parameters for silica water gels were determined experimentally at CFDRC's Special Projects Laboratory, with a constant shear rate capillary viscometer. Batches of 8:1 (by weight) water-silica gel were mixed using CFDRC s 10-gallon gelled propellant mixer. Prior to testing the gel was allowed to rest in the rheometer tank for at least twelve hours to ensure that the delicate structure of the gel had sufficient time to reform. During the tests silica gel was pressure fed and discharged through stainless steel pipes ranging from 1", to 36", in length and three diameters; 0.0237", 0.032", and 0.047". The data collected in these tests included pressure at tube entrance and volumetric flowrate. From these data the uncorrected shear rate, shear stress, residence time, and viscosity were evaluated using formulae for non-Newtonian, power law fluids. The maximum shear rates (corrected for entrance effects) obtained in the rheometer with the current setup were in the 150,000 to 170,000sec- range. GFSSP simulations were performed with a flow circuit simulating the capillary rheometer and using Power Law gel viscosity coefficients from the experimental data. The agreement between the experimental data and the simulated flow curves was within +/-4% given quality entrance effect data.

DiSalvo, Roberto↗
NASA NTRS1983

Computer modeling of batteries from non-linear circuit elements

A simple non-linear circuit model for battery behavior is given. It is based on time-dependent features of the well-known PIN change storage diode, whose behavior is described by equations similar to those associated with electrochemical cells. The circuit simulation computer program ADVICE was used to predict non-linear response from a topological description of the battery analog built from advice components. By a reasonable choice of one set of parameters, the circuit accurately simulates a wide spectrum of measured non-linear battery responses to within a few millivolts.

Waaben, S.↗
DOE OSTI2020

Transport Processes in a Li-ion Cell during an Internal Short-Circuit

Internal short-circuit in a lithium-ion cell causes an abrupt increase in cell temperature and triggers subsequent thermal runaway. In this work, we present a detailed electrochemical-thermal model to investigate the physical behavior during an internal short-circuit. Simulations at wide range of heat transfer coefficients and short-circuit resistances are conducted to illustrate electrochemical and thermal behavior under a wide range of conditions. The Joule heating at the shorted region promotes electrochemical reactions nearby, causing in-plane non-uniformity of electrolyte and active material transport. Furthermore, it is found that diffusion in solid active materials plays a significant role at very high shorting currents (~20 C), as electrochemical reactions rate are being controlled progressively more by availability of Li + at the interface, due to limitations in diffusion through the active material with increasing discharge rates. This diffusion limitation causes a drop in available energy, and subsequently a decrease in cell equilibrium potential and the heat generation rate at the location of the short. On the other hand, rapid depletion of lithium concentration in the electrolyte and accumulation on the electrode surface results in highly non-uniform transport properties resulting in higher heat generation rates. Hence, the heating regime shifts from "local heating" to "global heating". Based on the findings, important design parameters for battery safety are discussed.

25 ENERGY STORAGE↗
DOE OSTI2023

Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach

Parameter extraction of compact transistor models is an expensive process, heavily relying on engineering knowledge and experience. To automate such a process, we propose a novel approach, Graph-based Compact Model (GCM), that integrates physical modeling and data-driven learning. GCM utilizes Graph Neural Networks (GNNs) to establish the model structure, while retaining the physicality in compact models. Here, we implement our GCM in Verilog-A to support circuit simulations. As demonstrated with an academic 7 nm FinFET PDK, the new approach automatically generates a GCM model within a minute, and achieves excellent accuracy and efficiency in SPICE.

42 ENGINEERING↗
NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗
DOE OSTI2020

Prediction of Circuit Response to an Electromagnetic Environment (ASC IC FY2020 Milestone 7179)

This report covers the work performed in support of the ASC Integrated Codes FY20 Milestone 7179. For the Milestone, Sandia's Xyce analog circuit simulator was enhanced to enable a loose coupling to Sandia's EIGER electromagnetic (EM) simulation tool. A device was added to Xyce that takes as its input network parameters (representing the impedance response) and short-circuit current induced in a wire or other element, as calculated by an EM simulator such as EIGER. Simulations were performed in EIGER and in Xyce (using Harmonic Balance analysis) for a variety of linear and nonlinear circuit problems, including various op amp circuits. Results of those simulations are presented and future work is also discussed.

42 ENGINEERING↗
DOE OSTI2020

Application Note: Mixed Signal Simulation with Xyce™ 7.1

This application note describes how Release 7.1 of the Xyce circuit simulator can be coupled with external simulators via either a Python-based interface that leverages the Python ctypes foreign function library or via the Verilog Procedural Interface (VPI). It also documents the usage of these interfaces on RHEL7 with Python 2.6 or 2.7. These interfaces are still under development and may change in the future. So, a key purpose of this application note is to solicit feedback on these interfaces from both internal Sandia Xyce users and other performers on the DARPA Posh Open Source Hardware (POSH) program.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Possibilistic simulation of quantum circuits by classical circuits

In a breakthrough work, Bravyi, Gosset, and König (BGK) [Science 362, 308 (2018)] unconditionally proved that constant-depth quantum circuits are more powerful than their classical counterparts. Here, their result is equivalent to saying that a particular family of constant-depth quantum circuits takes classical circuits at least Ω⁡(log⁡n) depth to “simulate,” in a certain sense. In our paper, we formalize their sense of simulation, which we call “possibilistic simulation” or “p-simulation,” and construct explicit classical circuits that can p-simulate any depth-d quantum circuit with Clifford and t T-gates in depth O(d+t). Our classical circuits use {NOT,AND,OR} gates of fan-in ≤ 2.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗