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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Anisotropic Tribological Properties of Silicon Carbide

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Miyoshi, K.↗
NASA NTRS1982

Surface chemistry and wear behavior of single-crystal silicon carbide sliding against iron at temperatures to 1500 C in vacuum

X-ray photoelectron and Auger electron spectroscopy analyses and morphological studies of wear and metal transfer were conducted with a single-crystal silicon carbide 0001 surface in contact with iron at various temperatures to 1500 C in a vacuum of 10 to the minus 8th power pascal. The results indicate that below 800 C, carbide-carbon and silicon are primarily seen on the silicon carbide surface. Above 800 C the graphite increases rapidly with increase in temperature. The outermost surficial layer, which consists mostly of graphite and little silicon at temperatures above 1200 C is about 2 nm thick. A thicker layer, which consists of a mixture of graphite, carbide, and silicon is approximately 100 nm thick. The closer the surface sliding temperature is to 800 C, the more the metal transfer produced. Above 800 C, there was a transfer of rough, discontinuous, and thin iron debris instead of smooth, continuous and thin iron film which was observed to transfer below 800 C. Two kinds of fracture pits were observed on the silicon carbide surface: (1) a pit with a spherical asperity; and (2) multiangular shaped pits.

Miyoshi, K.↗
NASA NTRS1982

MC carbide structures in M(lc2)ar-M247

The morphologies and distribution of the MC carbides in Mar-M247 ingot stock and castings were investigated using metallographic, X-ray diffraction and energy-dispersive X-ray analysis techniques. The MC carbides were found to form script structures during solidification. The script structures were composed of three distinct parts. The central cores and elongated arms of the MC carbide script structures had compositions (Ti, Cr, Hf, Ta, W)C and lattice parameters of 4.39 A. The elongated script arms terminated in enlarged, angular "heads". The heads had compositions (Ti, Hf, Ta, W)C and lattice parameters of approximately 4.50 A. The heads had a higher Hf content than the cores and arms. The size of the script structures, as well as the relative amount of head-type to core and arm-type MC carbide, was found to be determined by solidification conditions. No carryover of the MC carbides from the ingot stock to the remelted and cast material was observed.

Wawro, S. W.↗
NASA NTRS1983

Epsilon carbide - A low-temperature component of interplanetary dust particles

Transmission electron microscope study of a chondritic interplanetary dust particle has revealed the presence of epsilon iron-nickel carbide, a low-temperature carbide previously encountered only in metallurgical studies. In these studies epsilon-carbide was synthesized by carburization of iron or nickel grains in a stream of carbon monoxide or carbon monoxide plus hydrogen. Similar carburization of an iron-nickel metal in situ may have produced epsilon-carbide during particle heating on atmospheric entry or in solar orbit. Alternatively, the epsilon-carbide may be a by-product of Fischer-Tropsch reactions in the solar nebula. Such reactions have been proposed as the mechanism of hydrocarbon formation in the early solar system.

Christoffersen, R.↗
NASA NTRS1984

Carbides in iron-rich Fe-Mn-Cr-Mo-Al-Si-C systems

The optimization of high carbon iron-base superalloy properties with duplex microstructure gamma + M7C3 carbide requires analysis in the context of a seven-component system. Data are first provided here for the Fe-Mn-Cr-Mo-C quinary system, at 30 at. pct carbon. A characterization of competing carbides, according to a pseudoternary phase diagram at 35 wt pct iron, is made from isothermal sections. It is noted that while M7C3 and M3C carbides' occurrences are respectively favored at the Cr and Mn corners, the M2C carbide and molybdenum cementite are predominant with increasing amounts of Mo. Lattice parameters are reported for the various carbides.

Lemkey, F. D.↗
NASA NTRS1990

Chemical interactions in the aluminum-carbon and aluminum-silicon carbide systems

XPS was used to investigate the influence of O2 and H2O on the formation of aluminum carbide at Al-C and Al-SiC interfaces. It was determined that dosing the interfaces with H2O catalyzed the formation of aluminum carbide in both systems. This result is consistent with the oxidation model of carbide formation (developed to understand the kinetics of aluminum carbide formation at graphite-aluminum interfaces). These results imply that the formation of aluminum carbide in graphite- and SiC-reinforced metal-matrix composites, which severely degrades the composite mechanical properties by degrading the fiber and interface strength is catalyzed.

Maruyama, Benji↗
NASA NTRS1993

Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Matus, Lawrence G.↗
NASA NTRS1993

Tensile and stress-rupture behavior of hafnium carbide dispersed molybdenum and tungsten base alloy wires

The tensile strain rate sensitivity and the stress-rupture strength of Mo-base and W-base alloy wires, 380 microns in diameter, were determined over the temperature range from 1200 K to 1600 K. Three molybdenum alloy wires; Mo + 1.1w/o hafnium carbide (MoHfC), Mo + 25w/o W + 1.1w/o hafnium carbide (MoHfC+25W) and Mo + 45w/o W + 1.1w/o hafnium carbide (MoHfC+45W), and a W + 0.4w/o hafnium carbide (WHfC) tungsten alloy wire were evaluated. The tensile strength of all wires studied was found to have a positive strain rate sensitivity. The strain rate dependency increased with increasing temperature and is associated with grain broadening of the initial fibrous structures. The hafnium carbide dispersed W-base and Mo-base alloys have superior tensile and stress-rupture properties than those without HfC. On a density compensated basis the MoHfC wires exhibit superior tensile and stress-rupture strengths to the WHfC wires up to approximately 1400 K. Addition of tungsten in the Mo-alloy wires was found to increase the long-term stress rupture strength at temperatures above 1400 K. Theoretical calculations indicate that the strength and ductility advantage of the HfC dispersed alloy wires is due to the resistance to recrystallization imparted by the dispersoid.

Yun, Hee Mann↗
NASA NTRS2012

Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors

Honeycomb silicon carbide composite mirrors are made from a carbon fiber preform that is molded into a honeycomb shape using a rigid mold. The carbon fiber honeycomb is densified by using polymer infiltration pyrolysis, or through a reaction with liquid silicon. A chemical vapor deposit, or chemical vapor composite (CVC), process is used to deposit a polishable silicon or silicon carbide cladding on the honeycomb structure. Alternatively, the cladding may be replaced by a freestanding, replicated CVC SiC facesheet that is bonded to the honeycomb. The resulting carbon fiber-reinforced silicon carbide honeycomb structure is a ceramic matrix composite material with high stiffness and mechanical strength, high thermal conductivity, and low CTE (coefficient of thermal expansion). This innovation enables rapid, inexpensive manufacturing. The web thickness of the new material is less than 1 millimeter, and core geometries tailored. These parameters are based on precursor carbon-carbon honeycomb material made and patented by Ultracor. It is estimated at the time of this reporting that the HoneySiC(Trademark) will have a net production cost on the order of $38,000 per square meter. This includes an Ultracor raw material cost of about $97,000 per square meter, and a Trex silicon carbide deposition cost of $27,000 per square meter. Even at double this price, HoneySiC would beat NASA's goal of $100,000 per square meter. Cost savings are estimated to be 40 to 100 times that of current mirror technologies. The organic, rich prepreg material has a density of 56 kilograms per cubic meter. A charred carbon-carbon panel (volatile organics burnt off) has a density of 270 kilograms per cubic meter. Therefore, it is estimated that a HoneySiC panel would have a density of no more than 900 kilograms per cubic meter, which is about half that of beryllium and about onethird the density of bulk silicon carbide. It is also estimated that larger mirrors could be produced in a matter of weeks. Each cell is completely uniform, maintaining the shape of the inserted mandrel. Furthermore, the layup creates pressure that insures node bond strength. Each node is a composite laminate using only the inherent resin system to form the bond. This contrasts starkly with the other known method of producing composite honeycomb, in which individual corrugations are formed, cured, and then bonded together in a secondary process. By varying the size of the mandrels within the layup, varying degrees of density can be achieved. Typical sizes are 3/8 and 3/16 in. (approximately 10 and 5 millimeters). Cell sizes up to 1 in. (approximately 25 millimeters) have been manufactured. Similarly, the shape of the core can be altered for a flexible honeycomb structure.

Goodman, William↗
NASA NTRS2016

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Progressive Failure Analysis↗
NASA NTRS1978

Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1978

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

Miyoshi, K.↗
NASA NTRS1978

Wear of single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted in vacuum with single crystal silicon carbide (0001) surface in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. The hexagon shaped cracking and fracturing of silicon carbide that occurred is believed to be due to cleavages of both the prismatic and basal planes. The silicon carbide wear debris, which was produced by brittle fracture, slides or rolls on both the metal and silicon carbide and produces grooves and indentations on these surfaces. The wear scars of aluminum and titanium, which have much stronger chemical affinity for silicon and carbon, are generally rougher than those of the other metals. Fracturing and cracking along the grain boundary of rhodium and tungsten were observed. These may be primarily due to the greater shear moduli of the metals.

Miyoshi, K.↗
NASA NTRS1978

Effect of oxygen and nitrogen interactions on friction of single-crystal silicon carbide

Friction studies were conducted with single-crystal silicon carbide contacting silicon carbide and titanium after having been exposed to oxygen and nitrogen in various forms. After they had been sputter cleaned, the surfaces were (1) exposed to gaseous oxygen and nitrogen (adsorption), (2) ion bombarded with oxygen and nitrogen, or (3) reacted with oxygen (SiC only). Auger emission spectroscopy was used to determine the presence of oxygen and nitrogen. The results indicate that the surfaces of silicon carbide with reacted and ion-bombarded oxygen ions give higher coefficients of friction than do argon sputter-cleaned surfaces. The effects of oxygen on friction may be related to the relative chemical, thermodynamic properties of silicon, carbon, and titanium for oxygen. The adsorbed films of oxygen, nitrogen, and mixed gases of oxygen and nitrogen on sputter-cleaned, oxygen-ion bombarded, and oxygen-reacted surfaces generally reduce friction. Adsorption to silicon carbide is relatively weak.

Miyoshi, K.↗
NASA NTRS1978

Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

Miyoshi, K.↗
NASA NTRS1979

A study of the deposition of carbide coatings on graphite fibers

The chemical vapor deposition of boron carbide and silicon carbide on graphite fibers to increase their electrical resistance was studied. Silicon carbide coatings were applied without degradation of the mechanical properties of the filaments. These coatings typically added 1000 ohms to the resistance of a filament as measured between two mercury pools. When SiC-coated filaments were oxidized by refluxing in boiling phosphoric acid, average resistance increased by an additional 1000 ohms; in addition resistance increases as high as 150 K ohms and breakdown voltages as high as 17 volts were noted. Data on boron carbide coatings indicated that such coatings would not be effective in increasing resistance, and would degrade the mechanical properties.

Suplinskas, R. J.↗
NASA NTRS1980

Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Dicarlo, J. A.↗
NASA NTRS1980

Dynamic modulus and damping of boron, silicon carbide, and alumina fibers

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide-coated boron fibers were measured from -190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature-dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamic fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron-based fibers are strongly anelastic, displaying frequency-dependent moduli and very high microstructural damping. The single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Dicarlo, J. A.↗