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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Devices are used in inspection of contact resistance in plated connectors after assembly into cables. System permits rapid inspection of connectors when mating connectors or special apparatus are not available, and enables source of excessive resistance to be precisely determined.
Among the layered two dimensional semiconductors, molybdenum disulfide (MoS 2 ) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light–matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response ( R ) and external quantum efficiency (EQE) of few-atomic layered MoS 2 phototransistors fabricated on a SiO 2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm–900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 10 3 A W -1 under white light illumination with an optical power P opt = 0.02 nW. The R value increased to 3.5 × 10 3 A W -1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 10 3 and 6 × 10 3 A W -1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 10 5 % and 10 6 % measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent–dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.
Low resistance small area contacts on semiconducting metal oxides
Friction and contact resistance for gallium lubricated low speed copper sliprings in vacuum
Analysis has been conducted to determine thermal contact resistance at interface of two heat conductors and effect of roughness of mating surfaces on pressure distribution. Investigation reveals how heat transfer resistance may be decreased or increased by changing surface properties of particular interface being considered.
We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.
Techniques explored in search for rapid, reliable test. Resistances of aluminum/silicon contacts and methods to measure subjects of NASA report. Study with three tasks undertaken to evaluate nature and reliability of large numbers of semiconductor contacts of type now being fabricated in integrated circuits: Develop yield analysis for series strings of contacts using wafer-level electrical measurements, and identify different types of faults by visual inspection; develop wafer-level tests to evaluate reliability of contact strings; and develop mathematical model for current flow in contacts and examine contact region for evidence of micro-alloying.
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between metallic surfaces. Etching results in a monolayer plating of platinum on the wafer surface, preventing oxide growth.
A comparative study of the methods developed for the calculation of thermal contact resistance between two surfaces submitted to a perpendicular heat flux is presented. Several factors affecting this resistance are analyzed and a brief historical review of the works in this field is made, spotting the methods of interest for space applications. These are compared to experimental data so as to establish the most proper method for the couplings of the first Brazilian satellite.
Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.
Transient temperature distribution in two layer one dimensional slab with initially steady state heat transfer and suddenly changed thermal contact resistances
In this report the data is reviewed on thermal contact conductance (TCC) and/or thermal contact resistance (TCR) at material interfaces which employs flexible graphite (FG) materials as thermal interface materials (TIM). FG materials are often used as TIM due to their conforming nature. While the overall TCR can be estimated straightforward from measured data, the interface TCR is much more difficult to obtain. The report also discusses the interfacial thermal contact conductance between FG-tungsten and FG-Glidcop-Al15, which are envisioned for high-heat flux applications.
Thermal contact resistance measurement at various ambient pressures compared with theoretical predictions with each parameter analyzed over interface by computer program
The metal circuits and brazes used in electronic, energy conversion, and/or energy storage devices often have difficulty wetting and adhering to ceramic and/or ceramic-passivated metal substrates. Here, a novel Particle Interlayer Directed Wetting and Spreading (PIDWAS) technique is demonstrated that utilizes screen printing, the low wetting angle of silver on nickel, and the high work of adhesion between nickel and various ceramics to produce well-adhered, self-assembled silver patterns on ceramic and/or stainless-steel substrates not normally wet by silver. The resulting Ag-Ni circuits have higher sapphire adhesion strengths (up to 30 MPa on sapphire), higher densities (>97% on sapphire), and similar high-temperature electronic resistivities to those made using commercially-available Heraeus C8710 or DAD-87 silver circuit pastes. Similarly, Ag-Ni brazes between a variety of ceramic and/or stainless-steel substrates have better microstructural stability with rapid thermal cycling, reduction-oxidation cycling, and dual atmosphere isothermal aging than conventional Ag-CuO brazes. In addition, the residual Ni in these Ag-Ni circuits and brazes can be used to chemically getter surface segregated Al, ensuring low contact resistances on a variety of chromia- and/or alumina-passivated stainless steels. Reference: [1] Hu G, Zhou Q, Bhatlawande A, Park J, Termuhlen R, Ma Y, Bieler TR, Yu HC, Qi Y, Hogan T & Nicholas JD. Patterned Nickel Interlayers for Enhanced Silver Wetting, Spreading and Adhesion on Ceramic Substrates. Scripta Materialia, 2021; 196, 113767. 10.1016/j.scriptamat.2021.113767 [2] Park J, Phongpreecha T, Nicholas JD & Qi Y. Enhanced Liquid Metal Wetting on Oxide Surfaces via Patterned Particles. Acta Materialia, 2020; 199, 551-560. 10.1016/j.actamat.2020.08.037
Interfacial thermal resistance results of various nanotube and nanofiber coatings, prepared by chemical vapor deposition (CVD) methods, are reported at relatively low clamping pressures. The five types of samples examined include multi-walled and single-walled nanotubes growth by CVD, multi-walled nanotubes grown by plasma enhanced CVD (PECVD) and carbon nanofibers of differing aspect ratio grown by PECVD. Of the samples examined, only high aspect ratio nanofibers and thermally grown multi-walled nanotubes show an improvement in thermal contact resistance. The improvement is approximately a 60% lower thermal resistance than a bare Si-Cu interface and is comparable to that attained by commercially available thermal interface materials.
At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.
The contact of two rough, wavy surfaces; the contact of two rough but nominally flat plates pressed together over a concentrated area; and the contact of two rough but nominally flat plates bolted together are considered. In each case the pressure distribution is calculated as a function of the surface properties. In the case of wavy surfaces it is found that all necessary information for any combination of parameters can be reduced to one master graph. In the other two cases one such graph is needed for each geometry used. The resulting pressure distributions are used in a specific heat transfer example and the total joint resistance versus roughness is presented. A method for decreasing the resistance by increasing the roughness is shown.
Ohmmeter is used to indicate positive contact between electrodes and workpiece. This permits good soldering and prevents damage to electronic devices.