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At least 73 records · Page 4

CMOS Image Sensors: Electronic Camera On A Chip

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Space Microelectronics Image Sensors APS Digital I

Module comprising IC memory stack dedicated to and structurally combined with an IC microprocessor chip

A computer module is disclosed in which a stack of glued together IC memory chips is structurally integrated with a microprocessor chip. The memory provided by the stack is dedicated to the microprocessor chip. The microprocessor and its memory stack may be connected either by glue and/or by solder bumps. The solder bumps can perform three functions--electrical interconnection, mechanical connection, and heat transfer. The electrical connections in some versions are provided by wire bonding.

Carson, John C.

Time of flight system on a chip

A CMOS time-of-flight TOF system-on-a-chip SoC for precise time interval measurement with low power consumption and high counting rate has been developed. The analog and digital TOF chip may include two Constant Fraction Discriminators CFDs and a Time-to-Digital Converter TDC. The CFDs can interface to start and stop anodes through two preamplifiers and perform signal processing for time walk compensation (110). The TDC digitizes the time difference with reference to an off-chip precise external clock (114). One TOF output is an 11-bit digital word and a valid event trigger output indicating a valid event on the 11-bit output bus (116).

Paschalidis, Nicholas P.

Microstructure Evolution in Cut Metal Chips of Ti-6Al-4V

The microstructural evolution following metal cutting was investigated within metal chips of Ti-6Al-4V. Metal cutting was used to impose a high strain rate on the order of approx.10(exp 5)/s within the primary shear zone as the metal was removed from the workpiece. The initial microstructure of the parent material (PM) was composed of a bi-modal microstructure with coarse prior beta grains and equiaxed primary alpha located at the boundaries. After metal cutting, the microstructure of the metal chips showed coarsening of the equiaxed primary alpha grains and beta lamellar. These metallographic findings suggest that the metal chips experienced high temperatures which remained below the beta transus temperature.

Dong, L.

Improved On-Chip Measurement of Delay in an FPGA or ASIC

An improved design has been devised for on-chip-circuitry for measuring the delay through a chain of combinational logic elements in a field-programmable gate array (FPGA) or application-specific integrated circuit (ASIC). In the improved design, the delay chain does not include input and output buffers and is not configured as an oscillator. Instead, the delay chain is made part of the signal chain of an on-chip pulse generator. The duration of the pulse is measured on-chip and taken to equal the delay.

Chen, Yuan

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter

A Spacecraft Housekeeping System-on-Chip in a Radiation Hardened Structured ASIC

Housekeeping systems are essential to health monitoring of spacecraft and instruments. Typically, sensors are distributed across various sub-systems and data is collected using components such as analog-to-digital converters, analog multiplexers and amplifiers. In most cases programmable devices are used to implement the data acquisition control and storage, and the interface to higher level systems. Such discrete implementations require additional size, weight, power and interconnect complexity versus an integrated circuit solution, as well as the qualification of multiple parts. Although commercial devices are readily available, they are not suitable for space applications due the radiation tolerance and qualification requirements. The Housekeeping System-o n-A-Chip (HKSOC) is a low power, radiation hardened integrated solution suitable for spacecraft and instrument control and data collection. A prototype has been designed and includes a wide variety of functions including a 16-channel analog front-end for driving and reading sensors, analog-to-digital and digital-to-analog converters, on-chip temperature sensor, power supply current sense circuits, general purpose comparators and amplifiers, a 32-bit processor, digital I/O, pulse-width modulation (PWM) generators, timers and I2C master and slave serial interfaces. In addition, the device can operate in a bypass mode where the processor is disabled and external logic is used to control the analog and mixed signal functions. The device is suitable for stand-alone or distributed systems where multiple chips can be deployed across different sub-systems as intelligent nodes with computing and processing capabilities.

Suarez, George

On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

Chattopadhyay, Goutam

On-Chip Microfluidic Components for In Situ Analysis, Separation, and Detection of Amino Acids

The Astrobiology Analytical Laboratory at GSFC has identified amino acids in meteorites and returned cometary samples by using liquid chromatography-electrospray ionization time-of-flight mass spectrometry (LCMS). These organic species are key markers for life, having the property of chirality that can be used to distinguish biological from non-biological amino acids. One of the critical components in the benchtop instrument is liquid chromatography (LC) analytical column. The commercial LC analytical column is an over- 250-mm-long and 4.6-mm-diameter stainless steel tube filled with functionized microbeads as stationary phase to separate the molecular species based on their chemistry. Miniaturization of this technique for spaceflight is compelling for future payloads for landed missions targeting astrobiology objectives. A commercial liquid chromatography analytical column consists of an inert cylindrical tube filled with a stationary phase, i.e., microbeads, that has been functionalized with a targeted chemistry. When analyte is sent through the column by a pressurized carrier fluid (typically a methanol/ water mixture), compounds are separated in time due to differences in chemical interactions with the stationary phase. Different species of analyte molecules will interact more strongly with the column chemistry, and will therefore take longer to traverse the column. In this way, the column will separate molecular species based on their chemistry. A lab-on-chip liquid analysis tool was developed. The microfluidic analytical column is capable of chromatographically separating biologically relevant classes of molecules based on their chemistry. For this analytical column, fabrication, low leak rate, and stationary phase incorporation of a serpentine microchannel were demonstrated that mimic the dimensions of a commercial LC column within a 5 10 1 mm chip. The microchannel in the chip has a 75- micrometer-diameter oval-shaped cross section. The serpentine microchannel has four different lengths: 40, 60, 80, and 100 mm. Functionized microbeads were filled inside the microchannel to separate molecular species based on their chemistry.

Zheng, Yun

On-chip Broadband Load Calibrators for Characterizing Transition-Edge Sensor Bolometers

We describe the design and fabrication of on-chip broadband load calibrators for element-by- element and full circuit characterization of transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) polarimetry. Fabricated in a 4 X 4 grid on a 100 mm silicon wafer, the chips allow systematic testing of individual detector circuit elements without the need for an external blackbody source. This in-situ testing approach provides rapid and efficient characterization of various pixel designs in order to optimize the optical efficiency and control of systematic effects of the detectors. In this work, we demonstrate the on-chip calibrators on the Cosmology Large Angular Scale Surveyor (CLASS) W-band pixels. In particular, we investigate the loss on microstrip transmission lines and measure the performance of various designs of TESs, magic-tees, via-less crossovers, and signal terminations. We also test a filter-bank spectrometer with eight resonators spanning 80 – 105 GHz to characterize the spectral response of circuit elements across the detector bandwidth.

Sumit Dahal

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board

This poster describes a first attempt to demonstrate a multi-chip prototype lander control and sensor signal digitization electronics circuit board comprised of ten NASA Glenn IC Generation 11 SiC JFET-R IC chips in 460 °C, 9.4 MPa harsh Venus surface conditions. The lander circuit ceased electrical operation prematurely at 107 °C as the Venus chamber heated up. Optical and SEM post-test inspections indicate fatal dielectric cracks occurred on only one of the ten SiC chips.

silicon carbide

VLSI design of turbo decoder for integrated communication system on a chip applications

A high-throughput low-power turbo decoder core has been developed for integrated communication system applications such as satellite communications, wireless LAN, digital TV, cable modem, Digital Video Broadcast (DVB), and xDSL systems. The turbo decoder is based on convolutional constituent codes, which outperform all other Forward Error Correction techniques. This turbo decoder core is parameterizable and can be modified easily to fit any size for advanced communication system-on-chip products. The turbo decoder core provides Forward Error Correction of up to 15 Mbits/sec on a 0.13-micron CMOS FPGA prototyping chip at a power of 0.1 watts.

turbo decoder

Wireless Capacitive Pressure Sensor With Directional RF Chip Antenna for High Temperature Environments

This paper presents the design, fabrication and characterization of a wireless capacitive pressure sensor with directional RF chip antenna that is envisioned for the health monitoring of aircraft engines operating in harsh environments. The sensing system is characterized from room temperature (25 C) to 300 C for a pressure range from 0 to 100 psi. The wireless pressure system consists of a Clapp-type oscillator design with a capacitive MEMS pressure sensor located in the LC-tank circuit of the oscillator. Therefore, as the pressure of the aircraft engine changes, so does the output resonant frequency of the sensing system. A chip antenna is integrated to transmit the system output to a receive antenna 10 m away.The design frequency of the wireless pressure sensor is 127 MHz and a 2 increase in resonant frequency over the temperature range of 25 to 300 C from 0 to 100 psi is observed. The phase noise is less than minus 30 dBcHz at the 1 kHz offset and decreases to less than minus 80 dBcHz at 10 kHz over the entire temperature range. The RF radiation patterns for two cuts of the wireless system have been measured and show that the system is highly directional and the MEMS pressure sensor is extremely linear from 0 to 100 psi.

Pressure sensor

Flip chip packaging of a MEMS neuro-prosthetic system

A joint research team from California Institute of Technology and Jet Propulsion Laboratory is developing a fully miniaturized, smart implantable neuro-prosthetic system, by combining integrated electronics with Micro Electro Mechanical Structure (MEMS) based electrode arrays. The packaging group of this project team has been tasked with designing and fabricating a package to interface electrically between a MEMS electrode array, capable of extracting signals from brain, and an electronic chip, capable of providing on chip conditioning/processing of extracted data, while delivering the output data to a detector located outside the body.

flip

Improved method of dicing integrated circuit wafers into chips

Method employing a pressure chamber is used for dicing semiconductor single-crystal wafers, containing integrated circuits, into small chips along pre-scribed lines. Uniform bending of the scribed wafer over the convex surface of a perforated hemisphere, breaks it cleanly into individual chips without damaging the circuits.

Litant, I.

Development of chip passivated monolithic complementary MISFET circuits with beam leads

The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.

Ragonese, L. J.

Laser scanner for testing semiconductor chips

Individual ''fingerprint'' signals are produced when system photoexcites chips. ''Fingerprints'' are analyzed for characteristics associated with defects, including many not visible to the naked eye. Electromagnetic radiation photogenerates free electrons and holes in semiconductor chip. These carriers produce electrical signals at terminals. Signals vary depending on what defects are present.

Hall, T. C.