Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds
Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.