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At least 73 records · Page 4

Critical Current Distributions of Recent Bi-2212 Round Wires

Bi 2 Sr 2 CaCu 2 O 8+x (Bi-2212) is the only high-field, high-temperature superconductor (HTS) capable of reaching a critical current density J c (16 T, 4.2 K) of 6500 A·mm –2 in the highly desirable round wire (RW) form. However, state-of-the-art Bi-2212 conductors still have a critical current density (J c ) to depairing current density (J d ) ratio around 20 to 30 times lower than that of state-of-the-art Nb–Ti or REBCO. Previously, we have shown that recent improvements in Bi-2212 RW J c are due to improved connectivity associated with optimization of the heat treatment process, and most recently due to a transition to a finer and more uniform powder manufactured by Engi-Mat. One quantitative measure of connectivity may be the critical current (I c ) distribution, since the local I c in a wire can vary along the length due to variable vortex-microstructure interactions and to factors such as filament shape variations, grain-to-grain connectivity variations and blocking secondary phase distributions. Modeling the experimental V-I transition measured on a low resistance shunt as a complex sum of voltage contributions of individual filament and wire sub-sections allows a numerical extraction of the I c distribution from the d 2 V/dI 2 treatment of the V-I curves. Here we compare ~0.1 m length I c distributions of Bi-2212 RWs with recent state-of-the-art very high-J c Engi-Mat powder and lower J c and older Nexans granulate powder. We do find that the I c spread for Bi-2212 wires is about twice the relative standard of high-J c Nb–Ti well below H irr . We do not yet see any obvious contribution of the Bi-2212 anisotropy to the I c distribution and are rather encouraged that these Bi-2212 round wires show relative I c distributions not too far from high-J c Nb–Ti wires.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quasi-One-Dimensional Structure and Possible Helical Antiferromagnetism of RbMn 6 Bi 5

Quasi-one-dimensional materials exhibit not only unique crystal structure but also abundant physical properties such as charge density wave, Luttinger liquid, and superconductivity. In this study, we report the discovery, structure, and physical properties of a new manganese-based quasi-one-dimensional material RbMn 6 Bi 5 , which crystallizes in a monoclinic space group C 2/ m (No. 12) with lattice parameters a = 23.286(5) Å, b = 4.6215(9) Å, c = 13.631(3) Å, and β = 125.00(3)°. The structure features [Mn 6 Bi 5 ] –1 double-walled column extending along the [010] direction, together with Bi–Bi homoatomic bonds linking the columns and the countercation Rb + . The temperature-dependent resistivity clearly indicates a significant resistivity anisotropy for RbMn 6 Bi 5 , whereas the magnetic susceptibility and specific heat measurements show that RbMn 6 Bi 5 is antiferromagnetic below 82 K. The density functional theory calculations indicate that RbMn 6 Bi 5 is a quasi-one-dimensional metal with possible helical antiferromagnetic configuration. The discovery of RbMn 6 Bi 5 confirms the viability of discovering new quasi-one-dimensional materials in manganese-based compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22

Hybrid organic-inorganic halides containing Bi and Sb generally exhibit higher stability and lower toxicity compared to Pb analogues. Here, in this work, synthesis, crystal and electronic structures and optical properties of a brand-new methylammonium bismuth iodide, (MA) 4 Bi 6 I 22 (MA + = CH 3 NH 3 + ), are reported. Interestingly, we find that the presence of the HgI2 is necessary for the targeted preparation of (MA) 4 Bi 6 I 22 . (MA) 4 Bi 6 I 22 contains isolated [Bi 6 I 22 ] 4- clusters made of six edge-sharing octahedral BiI6 units, which are separated by MA + cations in its 0D crystal structure. A relatively low optical band gap of 1.9 eV was estimated for (MA) 4 Bi 6 I 22 based on diffuse reflectance measurements. An intense photoluminescence peak emerges at 636 nm at low temperatures that supports the assigned band gap value. Electronic structure calculations show the presence of flat bands in the valence and conduction bands, consistent with the low-dimensional structure of (MA) 4 Bi 6 I 22 , and slightly indirect nature of the bandgap. Our findings suggest that the use of facilitator moieties such as HgI 2 may provide a pathway to obtaining alternative methylammonium bismuth iodides to (MA) 3 Bi 2 I 9 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ordering in GaAs co-doped with Bi and N

Introducing only a few atomic percent of Bi or N in GaAs has a large effect on the band gap of the material. Specifically Bi doped GaAs shows potential for local band gap engineering in optoelectronic applications. The incorporation of Bi and N into GaAs is difficult due to strain effects. In this work we study the ordering of these dopants at the atomic scale in order to get a better understanding of the behavior of these dopants in the host lattice. Cross-sectional scanning tunneling microscopy is used to find the exact position of Bi and N dopants in the GaAs matrix, allowing us to study both their nearest neighbor pair occurrences and pair correlation functions. An attractive interaction between Bi dopants at short ranges (1-2 nm) is found and a similar effect is observed between N dopants. Here, we find a repulsive interaction with a similar length scale between Bi and N dopants. A similar repulsion is found in the Bi-N nearest neighbor pairs. Density functional theory is used to calculate the different nearest neighbor pair energies and test these results to the experimental pair occurrences. It is concluded from the experimental and theoretical results that the growth conditions and N inclusion greatly affects the Bi distribution in GaAs.

36 MATERIALS SCIENCE↗

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗

Cs 3 Bi 2 I 9 -hydroxyapatite composite waste forms for cesium and iodine immobilization

Perovskite-based ceramic composites were developed as potential waste form materials for immobilizing cesium (Cs) and iodine (I) with high waste loadings and chemical durability. The perovskite Cs 3 Bi 2 I 9 has high Cs (22 wt%) and I (58 wt%) content, and thus can be used as a potential host phase to immobilize these critical radionuclides. In this work, the perovskite Cs 3 Bi 2 I 9 phase was synthesized by a cost effective solution-based approach, and was embedded into a highly durable hydroxyapatite matrix by spark plasma sintering to form dense ceramic composite waste forms. The chemical durabilities of the monolithic Cs 3 Bi 2 I 9 and Cs 3 Bi 2 I 9 -hydroxyapatite composite pellets were investigated by static and semi-dynamic leaching tests, respectively. Cs and I are incongruently released from the matrix for both pure Cs 3 Bi 2 I 9 and composite structures. The normalized Cs release rate is faster than that of I, which can be explained by the difference in the strengths between Cs-I and Bi-I bonds as well as the formation of insoluble micrometer-sized BiOI precipitates. The activation energies of elemental releases based on dissolution and diffusion-controlled mechanisms are determined with significantly higher energy barriers for dissolution from the composite versus that of the monolithic Cs 3 Bi 2 I 9 . The ceramic-based composite waste forms exhibit excellent chemical durabilities and waste loadings, commensurate with the state-of-the-art glass-bonded perovskite composites for I and Cs immobilization.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Surface Conversion of Single-Crystal Bi 2 Se 3 to β-In 2 Se 3

In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi 2 Se 3 can be converted to layered-2D rhombohedral ß-In 2 Se 3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis with low-energy electron diffraction (LEED) and Auger electron spectroscopy. Additional ex situ characterization included x-ray diffraction, transmission-electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping, and Raman spectroscopy. The resulting single-crystal ß-In 2 Se 3 adopts the rhombohedral crystal structure (space group R-3m) and orientation of the underlying Bi 2 Se 3 , and the excess Bi atoms generated by this process create an underlying region of Bi-rich Bi x Se y . Due to the difference in bandgap between Bi 2 Se 3 and In 2 Se 3 , this conversion reaction presents a pathway to lateral heterojunctions if only selected regions are converted by masking the surface to spatially define the TMIn exposure. The conversion may also have implications for heteroepitaxy, because the in-plane lattice constants of Bi 2 Se 3 and In 2 Se 3 (0001) surfaces match those of InP and GaAs (111), respectively, and the natural cleavage planes of a layered-2D crystal facilitate substrate removal and reuse.

14 SOLAR ENERGY↗

New layered quaternary Zintl pnictide oxides Ba 2 Zn 2 Pn 2 O ( Pn = Sb, Bi): Discovery, crystal structures, band engineering, and transport properties

Three new heteroanionic oxypnictides, Ba 2 Zn 2 Sb 2 O, Ba 2 Zn 2 Bi 2 O, and the solid solution Ba 2 Zn 2 Sb 2−x Bi x O (x ≈ 1.1–1.6), have been synthesized and structurally characterized. They are isostructural with their Mn-bearing analog, adopting the Ba 2 Mn 2 Sb 2 O-type structure (space group P6 3 /mmc, No. 194), and feature a double-layered 2D $^{2}_{∞}$ [Zn 2 Pn 2 O] 2- substructure (Pn = Sb, Bi, Sb/Bi) composed of corner-sharing, distorted tetrahedral ZnPn 3 O units. Electronic structure calculations reveal a systematic progression from semiconducting Ba 2 Zn 2 Sb 2 O to metallic Ba 2 Zn 2 Bi 2 O as Bi content increases. These trends are corroborated by transport property measurements, with Ba 2 Zn 2 Sb 0.9(1) Bi 1.1 O exhibiting relatively low electrical resistivity, high Hall mobilities of ∼160 cm 2 /V·s, and large Seebeck coefficients from 69 to 132 μV K −1 over the 300–600 K temperature range. Comparison with structurally related Zintl pnictides, such as SrIn 2 As 2 and PrZn 3 As 3 phases, situates Ba 2 Zn 2 Pn 2 O (Pn = Sb, Bi) within a broader family of heteroanionic oxypnictide Zintl compounds, highlighting their structural flexibility and amenability to band engineering. Finally, electronic structure and bonding considerations point to tunable semiconducting behavior and underscore the relevance of these materials for thermoelectric and topological applications.

Band engineering↗

Type-II superconductivity at 9K in Pb–Bi alloy

In the present work, we report the synthesis of Pb–Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 700°C in an automated furnace. The synthesized sample is characterized by X-ray Diffraction(XRD) and Energy dispersive X-ray analysis(EDAX) for its phase purity and elemental composition. Rietveld refinement of XRD reveals that the end product is a majority hexagonal Pb 7 Bi 3 , with minor rhombohedral Bi. The electronic transport measurement shows metallic behavior with the Debye temperature of 108K and a superconductivity transition temperature (T c ) below 9K, which is the maximum to date for any reported Pb–Bi alloy, Pb or Bi at ambient pressure. Partial substitution of Bi at the Pb site may modify the free density of electronic states within the BCS model to attain the optimum T c , which is higher by around 2K from the reported T c of Pb. The superconductor phase diagram derived from magneto-transport measurements reveals that the synthesized alloy is a conventional superconductor with an upper critical field (H c2 ) of 3.9 T, which lies well within the Pauli paramagnetic limit. The magnetization measurements carried out following ZFC(Zero Field Cool) protocols infer that the synthesized alloy is a bulk superconductor below 9K. The isothermal M-H(Magnetization vs. Field) measurements performed below T c establish it as a type-II superconductor. Furthermore, the specific heat capacity measurements show that the Pb–Bi alloy is a strongly coupled bulk superconductor below around 9K with possibly two superconducting gaps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis and Electrical Properties of a New Compound (BiSe) 0.97 (Bi 2 Se 3 ) 1.26 (BiSe) 0.97 (MoSe 2 ) Containing Metallic 1T-MoSe 2

The synthesis and electrical properties of a new misfit compound containing BiSe, Bi 2 Se 3 , and MoSe 2 constituent layers are reported. The reaction pathway involves competition between the formation of (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) and [(Bi 2 Se 3 ) 1+y ] 2 (MoSe 2 ). Excess Bi and Se are required in the precursor to synthesize (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ). High-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) confirm the stacking sequence of the heterostructure. Small grains of both 2H- and 1T-MoSe 2 are observed in the MoSe 2 layers. X-ray photoelectron spectroscopy (XPS) indicates that there is a significantly higher percentage of 1T-MoSe 2 in (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) than in (BiSe) 0.97 (MoSe 2 ), suggesting that more charge transfer to MoSe 2 occurs due to the additional BiSe layer. The additional charge transfer results in (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) having a low resistivity (14–19 μΩ m) with metallic temperature dependence. Furthermore, the heterogeneous mix of MoSe 2 polytypes observed in the XPS complicates the interpretation of the Hall data as two bands contribute to the electrical continuity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Evolution of Highly Anisotropic Magnetism in the Titanium-Based Kagome Metals LnTi 3 Bi 4 (Ln: La···Gd 3+ , Eu 2+ , Yb 2+ )

Here, we present a family of titanium-based kagome metals of the form LnTi 3 Bi 4 (Ln: La···Gd 3+ , Eu 2+ , Yb 2+ ). Four previously unreported compounds are presented: YbTi 3 Bi 4 , GdTi 3 Bi 4 , NdTi 3 Bi 4 , and PrTi 3 Bi 4 . Single-crystal growth methods are provided alongside detailed magnetic and thermodynamic measurements across the entire series. The LnTi 3 Bi 4 family of compounds are orthorhombic (Fmmm), layered compounds that exhibit slightly distorted titanium-based kagome nets interwoven with zigzag lanthanide-based (Ln) chains. Crystals are easily exfoliated parallel to the kagome sheets, and angular resolved photoemission (ARPES) measurements highlight the intricacy of the electronic structure in these compounds. Density functional theory (DFT) and ARPES studies find Dirac points near the Fermi level, consistent with the kagome-derived band structure. The magnetic properties and the associated anisotropy emerge from the quasi-1D zigzag chains of Ln and impart a wide array of magnetic ground states ranging from anisotropic ferromagnetism to complex antiferromagnetism with a cascade of metamagnetic transitions. In conclusion, the combination of the kagome-based electronic structure and highly anisotropic Ln-based magnetism on an exfoliatable platform cements the LnTi 3 Bi 4 family as an interesting addition to the ever-expanding suite of kagome metals.

36 MATERIALS SCIENCE↗

Tunable Perovskite-Derived Bismuth Halides: Cs 3 Bi 2 (Cl 1– x I x ) 9

Bismuth-based perovskites are of interest as safer alternatives to lead-based optoelectronic materials. Prior studies have reported on the compounds Cs 3 Bi 2 Cl 9 , Cs 3 Bi 2 I 9 , and Cs 3 Bi 2 Cl 3 I 6 . Here we examine a range of compounds of the formula Cs 3 Bi 2 (Cl 1–x I x ) 9 , where x takes values from 0.09 to 0.52. Powder and single-crystal X-ray diffraction were used to determine that all of these compounds adopt the layered vacancy-ordered perovskite structure observed for Cs 3 Bi 2 Cl 3 I 6 , which is also the high-temperature phase of Cs 3 Bi 2 Cl 9 . We find that, even with very small iodine incorporation, the structure is switched to that of Cs 3 Bi 2 Cl 3 I 6 , with I atoms displaying a distinct preference for the capping sites on the BiX 6 octahedra. Optical absorption spectroscopy was employed to study the evolution of optical properties of these materials, and this is complemented by density functional theory electronic structure calculations. Finally, three main absorption features were observed for these compounds, and with increasing x, the lowest-energy features are red-shifted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Improvement of Oxygen Reduction Performance in Alkaline Media by Tuning Phase Structure of Pd–Bi Nanocatalysts

Tuning the crystal phase of bimetallic nanocrystals offers an alternative avenue to improving their electrocatalytic performance. Herein, we present a facile and one-pot synthesis approach that is used to enhance the catalytic activity and stability toward oxygen reduction reaction (ORR) in alkaline media via control of the crystal structure of Pd-Bi nanocrystals. By merely altering the types of Pd precursors under the same conditions, the monoclinic structured Pd 5 Bi 2 and conventional face-centered cubic (fcc) structured Pd 3 Bi nanocrystals with comparable size and morphology can be precisely synthesized, respectively. Interestingly, the carbon-supported monoclinic Pd 5 Bi 2 nanocrystals exhibit superior ORR activity in alkaline media, delivering a mass activity (MA) as high as 2.05 A/mg Pd . After 10,000 cycles of ORR durability test, the monoclinic structured Pd 5 Bi 2 /C nanocatalysts still remain a MA of 1.52 A/mg Pd , which is 3.6 times, 16.9 times, and 21.7 times as high as those of the fcc Pd 3 Bi/C counterpart, commercial Pd/C, and Pt/C electrocatalysts, respectively. Moreover, structural characterizations of the monoclinic Pd 5 Bi 2 /C nanocrystals after the durability test demonstrate the excellent retention of the original size, morphology, composition, and crystal phase, greatly alleviating the leaching of the Bi component. Overall, this work provides new insight for the synthesis of multimetallic catalysts with a metastable phase and demonstrates phase-dependent catalytic performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetic Properties Tuning via Broad Range Site Deficiency in Square Net Material UCu x Bi 2

HfCuSi 2 -type pnictogen compounds have recently been shown to be a versatile platform for designing materials with topologically nontrivial band structures. However, these phases require strict control over the electron count to tune the Fermi level, which can only be achieved in compositions with A 2+ M 2+ Pn 2 and A 3+ M + Pn 2 (A = lanthanides, M = transition metals, Pn = pnictogens P–Bi) charge distribution. While such lanthanide compounds have been thoroughly studied as candidate magnetic topological materials, their heavy element analogs with uranium and bismuth remain largely underexplored. In this report, we present the synthesis of UCu x Bi 2 single crystals and study their magnetic properties. Detailed structural analysis revealed that flux-grown crystals always form as a site-deficient UCu x Bi 2 composition, where x varies between 0.20 and 0.64. Magnetic property measurements revealed a dependence of the magnetic coupling on the Cu site deficiency, linearly changing the Néel temperature from 51 K for UCu 0.60 Bi 2 to 118 K for UCu 0.30 Bi 2 . Moreover, higher Cu concentration promotes a metamagnetic transition in highly magnetically anisotropic UCu 0.60 Bi 2 single crystals. We show that DFT calculations can successfully model site deficiency in the UCu x Sb 2 and UCu x Bi 2 systems. This work paves the way toward using the site deficiency to tune the Fermi level in more ubiquitous A 3+ M 2+ x Pn 2 phases, which previously have not been considered topological candidate materials due to unfavorable electron count.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A comparative study of Bi, Sb, and BiSb for electrochemical nitrogen reduction leading to a new catalyst design strategy

Recent studies identified Bi as one of the most promising non-noble metal elements that can promote the electrochemical N 2 reduction reaction (ENRR) to produce NH 3 . The electronic features that make Bi a promising ENRR catalyst may also be owned by Sb that belongs to the same group as Bi. Thus, the ENRR properties of Bi, Sb, and a BiSb alloy were investigated comparatively to identify common characteristics that facilitate the ENRR. These catalysts were prepared as uniform coating layers on high surface area carbon felt electrodes, which could serve as both regular electrodes and pseudo-gas diffusion electrodes. The experimental results demonstrated that while Bi and Sb show comparable ENRR performances, the formation of a BiSb alloy distinctively increases the faradic efficiency for NH 3 production. Additionally, the X-ray photoelectron spectroscopy results revealed that Bi in BiSb possesses a partial positive charge while Sb in BiSb possesses a partial negative charge, which can impact the way the catalyst surface interacts with the reactants and reaction intermediates of the ENRR and hydrogen evolution reaction (HER), the major competing reaction with the ENRR. Computational investigations including the Bader charge analysis and Gibbs free energy calculations for the elemental steps of the ENRR and HER provided an explanation of how the formation of a BiSb alloy can change the selectivity for the ENRR. The combined experimental and theoretical results and discussion contained in this study lead to a new strategy for designing efficient metal catalysts for the ENRR. Additionally, this study investigated how the use of gas phase and dissolved N 2 affected the ENRR performances of the Bi, Sb, and BiSb catalysts.

36 MATERIALS SCIENCE↗

Ground state of Ce 3 Bi 4 Pd 3 unraveled by hydrostatic pressure

Noncentrosymmetric Ce 3 Bi 4 Pd 3 has attracted a lot of attention as a candidate for strongly correlated topological material, yet its experimental ground state remains a matter of contention. Two conflicting scenarios have emerged from a comparison to the prototypical Kondo insulator Ce 3 Bi 4 Pd 3 : Either Ce 3 Bi 4 Pd 3 is a spin-orbit-driven topological semimetal or a Kondo insulator with smaller Kondo coupling than its Pt counterpart. Here, we determine the ground state of Ce 3 Bi 4 Pd 3 via electrical resistivity measurements under hydrostatic pressure, which is a clean symmetry-preserving tuning parameter that increases hybridization but virtually preserves spin-orbit coupling. Ce 3 Bi 4 Pd 3 becomes more insulating under pressures up to 2.3 GPa, which is a signature of Ce-based Kondo insulating materials in the considered pressure range. Its small zero-pressure gap increases quadratically with pressure, similar to the behavior observed in the series Ce 3 Bi 4 (Pt 1 - x Pd x ) 3 , which indicates that Pt substitution and applied pressure have a similar effect. Finally, our result not only demonstrates that Kondo coupling, rather than spin-orbit coupling, is the main tuning parameter in this class of materials, but it also establishes that Ce 3 Bi 4 Pd 3 has a narrow-gap Kondo insulating ground state.

36 MATERIALS SCIENCE↗

High Thermoelectric Performance in 2D Sb 2 Te 3 and Bi 2 Te 3 Nanoplate Composites Enabled by Energy Carrier Filtering and Low Thermal Conductivity

Thermoelectrics are an important class of materials with great potential in alternative energy applications. In this study, two-dimensional (2D) nanoplates of the layered chalcogenides, Sb 2 Te 3 and Bi 2 Te 3 , are synthesized and composites of the two are investigated for their thermoelectric properties. The two materials, Sb 2 Te 3 and Bi 2 Te 3 , were synthesized as hexagonal, 2D nanoplates via a colloidal polyol route. The as-synthesized Sb 2 Te 3 and Bi 2 Te 3 vary drastically from one another in their lateral and vertical dimensions as revealed by scanning electron microscopy and atomic force microscopy. The single crystalline nanoplate nature is deduced by high-resolution transmission electron microscopy and selected area electron diffraction. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The nanoplates were consolidated as an anisotropic nanostructured pellet via spark plasma sintering. Preferred orientation observed in the powder X-ray diffraction pattern and scanning electron microscopy images of the fractured pellets confirm the anisotropic structure of the nanoplates. Thermoelectric properties in the parallel and perpendicular directions were measured, revealing strong anisotropy with a significant reduction to thermal conductivity in the perpendicular direction due to increased phonon scattering at nanoplate interfaces. All compositions, except that of the 25% Bi 2 Te 3 nanoplate composite, behave as degenerate semiconductors with increasing electrical resistivity as the temperature increases. The Seebeck coefficient is also increased dramatically in the nanocomposites, the highest reaching 210 μV/K for 15% Bi 2 Te 3 . The increase in Seebeck is attributed to energy carrier filtering at the nanoplate interfaces. Overall, these enhanced thermoelectric properties lead to a drastic increase in the thermoelectric performance in the perpendicular direction, with zT ~ 1.26, for the 15% Bi 2 Te 3 nanoplate composite at 450 K.

36 MATERIALS SCIENCE↗

Protocols and methodologies for acquiring and analyzing critical-current versus longitudinal-strain data in Bi 2 Sr 2 CaCu 2 O 8+x wires

Abstract In the literature on Bi 2 Sr 2 CaCu 2 O 8+ x (Bi-2212) superconducting wires, it is evident that measurement protocols for transport critical-current I c versus longitudinal strain ϵ and definitions of the so-called ‘strain limit’ are generally dissimilar. Yet, values obtained for the ‘strain limit’ are frequently assimilated to being those of the irreversible strain limit ϵ irr , regardless of the I c degradation-criterion used to define it. In effect, ϵ irr should correspond specifically to the I c ( ϵ ) irreversibility onset , where crack formation in Bi-2212 filaments presumably starts. Because I c ( ϵ ) degradation remains progressive over a fairly wide strain range beyond ϵ irr , the different I c degradation-criteria in use do not yield to the same result and, thus, are not equivalent from metrology perspective. Indeed, in studying densified samples of a modern Bi-2212 round wire, we found ϵ irr ≈ 0.4% and ϵ 5% ≈ 0.6% ( ϵ 5% being the strain where I c degrades by 5%). In this paper, we outline and suggest I c ( ϵ )-measurement protocols and data-analysis methodologies in the hope to converge the various approaches taken for studying Bi-2212 strain properties and, thus, remove related result discrepancies. A unified approach would enable more objective data comparisons among laboratories and among different Bi-2212 conductors. It would pave the way for more rigorous studies of effects potentially associated with wire design, powder, heat treatments, and other such parameters on the conductor’s strain properties.

protocols↗