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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Reentrant polar phase induced by the ferroionic coupling in B⁢i 1−𝑥 ⁢S⁢m 𝑥 ⁢Fe⁢O 3 nanoparticles

Using the model of four sublattices, the Landau-Ginzburg-Devonshire-Kittel phenomenological approach and the Stephenson-Highland ionic adsorption model for the description of coupled polar and antipolar long-range orders in ferroics, we analytically calculated the phase diagrams and polar properties of B⁢i 1−𝑥 ⁢S⁢m 𝑥⁢ Fe⁢O 3 nanoparticles covered by surface ions with dependence on their size, surface ions density, samarium content 𝑥 , and temperature. The size effects and ferroionic coupling govern the appearance and stability conditions of the long-range ordered ferroelectric, reentrant ferrielectric, and antiferroelectric phases in B⁢i 1−𝑥 ⁢S⁢m 𝑥 ⁢Fe⁢O 3 nanoparticles. Calculated phase diagrams are in qualitative agreement with the x-ray diffraction phase analysis, electron paramagnetic resonance, infrared spectroscopy, and electrophysical measurements of B⁢i 1−𝑥 ⁢S⁢m 𝑥 ⁢Fe⁢O 3 nanopowders sintered by the solution combustion method. The combined theoretical-experimental approach allows us to explain the influence of the ferroionic coupling and size effects in B⁢i 1−𝑥 ⁢S⁢m 𝑥 ⁢Fe⁢O 3 nanoparticles on their polar properties.

antiferroelectricity↗
DOE OSTI2023

Giant Nonlinear Optical Response via Coherent Stacking of In-Plane Ferroelectric Layers

Thin ferroelectric materials hold great promise for compact nonvolatile memory and nonlinear optical and optoelectronic devices. Herein, an ultrathin in-plane ferroelectric material that exhibits a giant nonlinear optical effect, group-IV monochalcogenide SnSe, is reported. Nanometer-scale ferroelectric domains with ≈90°/270° twin boundaries or ≈180° domain walls are revealed in physical-vapor-deposited SnSe by lateral piezoresponse force microscopy. Atomic structure characterization reveals both parallel and antiparallel stacking of neighboring van der Waals ferroelectric layers, leading to ferroelectric or antiferroelectric ordering. Ferroelectric domains exhibit giant nonlinear optical activity due to coherent enhancement of second-harmonic fields and the as-resulted second-harmonic generation was observed to be 100 times more intense than monolayer WS 2 . This work demonstrates in-plane ferroelectric ordering and giant nonlinear optical activity in SnSe, which paves the way for applications in on-chip nonlinear optical components and nonvolatile memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field–Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Non-volatile memory device structures such as ferroelectric random-access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the imposition of spontaneous internal biases and their resulting effect on the polarization properties of the ferroelectric (or field-induced ferroelectric/ antiferroelectric) layer. While HfO 2 -based thin films are ideal candidates for implementation into these devices due to their scalability and silicon compatibility, the phase purity of these oxides is sensitive to the selection of electrode material, preventing incorporation of asymmetric electrode layers into such structures. Within this work, electrode replacement following post-metallization anneal processing is introduced as a route to achieve ferroelectric and field-induced ferroelectric Hf x Zr 1–x O 2 (HZO) thin films with electrode-independent phase constitutions. The effects of this process and the corresponding internal biases imposed across the HZO layers due to asymmetric work functions are investigated. It is shown that internal biases vary in magnitude in accordance with prediction based on the work functions of the replaced electrode layers and affect remanent polarization magnitudes. Accordingly, electrode replacement presents a processing route that can readily produce HZO films with spontaneous internal biases and electrode- independent phase constitutions, facilitating implementation of these ferroelectrics into the next generation device structures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

On the Ordering Mechanism of Cu + in 2D van der Waals Multiferroic CuCrP 2 S 6

CuCrP 2 S 6 is a van der Waals multiferroic where the tunable Cu + sublattice underpins its exceptional ferroelectric and electronic switching properties. Yet, the microscopic mechanism governing Cu + ordering has remained elusive. Here, we combine single-crystal X-ray and neutron diffraction with pair distribution function analysis to uncover a temperature-driven evolution of Cu + ordering, giving rise to an incommensurate quasi-antipolar phase between the paraelectric and antiferroelectric states. The modulation originates from correlated Cu + occupancy redistribution coupled to breathing distortion of surrounding S 3 triangles, establishing a symmetry-adapted lattice distortion mode. Diffuse scattering persisting over 35 K above the transition confirms that the structural instability follows an order-disorder mechanism. The spontaneous off-centering of Cu + positions CuCrP 2 S 6 as a model platform for correlated order-disorder phenomena in 2D layered ferroics, and provides design principles for next-generation memory and logic devices.

ferroelectrics↗
DOE OSTI2022

Dynamic control of ferroionic states in ferroelectric nanoparticles

The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external field lead to the emergence of a broad range of paraelectric-like, antiferroelectric-like ionic, and ferroelectric-like ferroionic states. The crossover between these states can be controlled not only by the static characteristics of the surface charges, but also by their relaxation dynamics in the applied field. Obtained results are not only promising for advanced applications of ferroelectric nanoparticles in nanoelectronics and optoelectronics, they also offer strategies for experimental verification.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Local structural mechanism for enhanced energy storage properties in heterovalent doped NaNbO 3 ceramics

In recent years, there is a growing interest for new lead-free oxides with reversible antiferroelectric (AFE)-ferroelectric (FE) phase transition for high-power energy-storage applications. NaNbO 3 -based ceramics are particularly attractive due to their easy synthesis and cost-effectiveness. In order to stabilize reversible AFE-FE phase transition, NaNbO 3 is doped with a combination of heterovalent substitutions, although the underlying structural mechanism for the same is poorly understood. Here, we investigated local and average structures of Ca/Zr doped NaNbO 3 using neutron total scattering. Here, we show that Ca/Zr doping increases the average AFE phase (Pbma) fraction, however, the material remains as a composite of both FE (P2 1 ma) and AFE regions. Analysis of local structure suggests that increase in the long-range AFE phase results from more extensive twinning of local FE regions, due to introduced charge disorder. We propose that enhanced energy-storage properties of Ca/Zr-doped NaNbO 3 arises from localized twin boundary motion between the defect-induced pinning centers.

25 ENERGY STORAGE↗
DOE OSTI2023

The nature of dynamic local order in CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3

Hybrid organic-inorganic lead-halide perovskites (LHPs) are a class of semiconductors with remarkable properties relevant to optoelectronic applications. The structure-property-function relationship in LHPs, however, is poorly understood, leading to incomplete descriptions of optoelectronic properties and a persistent problem of device degradation due to ion migration. Here, we reveal the true structure to contain an assembly of dynamic, two-dimensional short-range structural correlations in the lead-halide octahedral sublattice, with additional correlations between organic molecules. Here, we propose that these correlations are the origin of large-amplitude halide displacements, which govern charge carrier mobility and the sharpness of the absorption edge. Correlations between organic molecules may introduce regions of transient ferroelectricity or antiferroelectricity, which increase charge carrier lifetime. Finally, the correlations introduce an ion diffusion barrier that is static on the timescale of diffusive jumps.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

An atomistic structural description of the ferrielectric polar phase involving non-coplanar cation displacements

Materials with antipolar-polar transformation are attractive for their large functional responses. However, the antipolar state remains controversial in many materials. For example, recent studies on archetypical antiferroelectric (AFE) materials indicate an incomplete compensation of antiparallel dipoles, which prompted their alternative definition as ferrielectric. Here, we investigated the origin of the ferrielectric (FIE) state in a classical AFE material using X-ray and neutron total scattering. We show that the FIE state arises from 3-dimensional modulation of the cation-centric electric dipoles, which can be viewed as periodic arrangement of 180° twin boundaries with non-Ising characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Insights into Cation Ordering of Double Perovskite Oxides from Machine Learning and Causal Relations

This work investigates origins of cation ordering in double perovskites using first-principles theory computations combined with machine learning (ML) and causal relations. We have considered various oxidation states of A, A', B, and B' from the family of transition metal ions to construct a diverse compositional space. A conventional framework employing traditional ML classification algorithms such as Random Forest (RF) coupled with appropriate features including geometry-driven and key structural modes leads to accurate prediction (~98%) of A-site cation ordering. We have evaluated the accuracy of ML models by employing analyses of decision paths, assignments of probabilistic confidence bound, and finally a direct non-Gaussian acyclic structural equation model to investigate causality. Our study suggests that structural modes are crucial for classifying layered, columnar, and rock-salt ordering. The charge difference between A and A' is the most important feature for predicting clear layered ordering, which in turn depends on the B and B' charge separation. We have also designed mathematical relationships with these features to derive energy differences to form clear layered ordering. Here, the trilinear coupling between tilt, in-phase rotation, and A-site antiferroelectric displacement in the Landau free-energy expansion becomes the necessary condition behind formation of A-site cation ordering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Coexistence and Coupling of Multiple Charge Orderings and Spin States in Hexagonal Ferrite

The coupling between charge and spin orderings in strongly correlated systems plays a crucial role in fundamental physics and device applications. As a candidate of multiferroic materials, LuFe 2 O 4 with a nominal Fe 2.5+ valence state has the potential for strong charge–spin interactions; however, these interactions have not been fully understood until now. Here, combining complementary characterization methods with theoretical calculations, two types of charge orderings with distinct magnetic properties are revealed. The ground states of LuFe 2 O 4 are decided by the parallel/antiparallel coupling of both charge and spin orderings in the adjacent FeO double layers. Whereas the ferroelectric charge ordering remains ferrimagnetic below 230 K, the antiferroelectric ordering undergoes antiferromagnetic–ferrimagnetic–paramagnetic transitions from 2 K to room temperature. This study demonstrates the unique aspects of strong spin-charge coupling within LuFe 2 O 4 . Our results shed light on the coexistence and competing nature of orderings in quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO 2 Films

Over a decade ago, ferroelectricity was discovered in doped HfO 2 thin films. The HfO 2 -based thin films have attracted much attention due to their remarkable scalability and CMOS compatibility. Other than the HfO 2 -based thin films, the undoped ZrO 2 thin films are understudied despite their commonly reported antiferroelectric behavior. However, being of the same fluorite structure as HfO 2 -based thin films, the undoped ZrO 2 also displayed considerable ferroelectricity as demonstrated in recent studies. Here, 45 nm-thick polycrystalline undoped ZrO 2 films are synthesized using atomic layer deposition with different ozone dose times. The ZrO 2 films are crystallized after atomic layer deposition at 350 °C without anneals. In general, the longer ozone dose time causes a lower in-plane tensile stress and oxygen vacancy content, which help facilitate an irreversible non-polar tetragonal to polar orthorhombic phase transition with electric-field cycling. However, the lower in-plane tensile stress and oxygen vacancy content also stabilize the monoclinic phase so that a long ozone dose time (>17.5 s) reduces the ferroelectric behavior. After wake-up cycles, the ZrO 2 thin film with an ozone dose time of 17.5 s exhibits a remanent polarization of 6 μC·cm –2 and a pyroelectric coefficient of -35 μC·K –1 ·m –2 . Moreover, the wake-up behavior is consistent between the ferroelectric and pyroelectric response. As essential factors in optimizing the growth of fluorite-structure thin films for ferroelectric applications, the in-plane tensile stress and oxygen vacancy content significantly influence the ferroelectric and pyroelectric properties. Additionally, the low thermal budget for processing ferroelectric ZrO 2 thin films is valuable for semiconductor back-end-of-line processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films

Phase identification in HfO 2 -based thin films is a prerequisite to understanding the mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise in next-generation non-volatile memory and computing technology. While grazing-incidence X-ray diffraction is commonly employed for this purpose, it has difficulty unambiguously differentiating between the ferroelectric phase and other metastable phases that may exist due to similarities in the d-spacings, their low intensities, and the overlapping of reflections. Infrared signatures provide an alternative route. However, their use in phase identification remains limited because phase control has overwhelmingly been accomplished via substituents, thereby convoluting infrared signatures between the substituent and the phase changes they induce. Herein, we report the infrared optical responses of three undoped hafnium oxide films where annealing conditions have been used to create films consisting primarily of the ferroelectric polar orthorhombic Pca2 1 , antipolar orthorhombic Pbca, and monoclinic P2 1 /c phases, as was confirmed via transmission electron microscopy (TEM), UVvisible optical properties, and electrical property measurements. Vibrational signatures acquired from synchrotron nano-Fourier transform infrared spectroscopy (nano-FTIR) are shown to be capable of differentiating between the phases in a non-destructive, rapid, and nanoscale manner. The utility of nano-FTIR is illustrated for a film exhibiting an antiferroelectric polarization response. In this sample, it is proven that this behavior results from the Pbca phase rather than the often-cited tetragonal phase. Here, by demonstrating that IRspectroscopy can unambiguously distinguish phases in this material, this work establishes a tool needed to isolate the factors dictating ferroelectric phase stability in HfO 2 -based materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Structural Evolution and Photoluminescence Quenching across the FASnI 3– x Br x ( x = 0–3) Perovskites

One of the primary methods for band gap tuning in metal halide perovskites has been halide (I/Br) mixing. Despite widespread usage of this type of chemical substitution in perovskite photovoltaics, there is still little understanding of the structural impacts of halide alloying, with the assumption being the formation of ideal solid solutions. The FASnI 3–x Br x (x = 0–3) family of compounds provides the first example where the assumption breaks down, as the composition space is broken into two unique regimes (x = 0–2.9; x = 2.9–3) based on their average structure with the former having a 3D and the latter having an extended 3D (pseudo 0D) structure. Pair distribution function (PDF) analyses further suggest a dynamic 5s 2 lone pair expression resulting in increasing levels of off-centering of the central Sn as the Br concentration is increased. These antiferroelectric distortions indicate that even the x = 0–2.9 phase space behaves as a nonideal solid-solution on a more local scale. Solid-state NMR confirms the difference in local structure yielding greater insight into the chemical nature and local distributions of the FA + cation. In contrast to the FAPbI 3–x Br x series, a drastic photoluminescence (PL) quenching is observed with x ≥ 1.9 compounds having no observable PL. In conclusion, our detailed studies attribute this quenching to structural transitions induced by the distortions of the [SnBr 6 ] octahedra in response to stereochemically expressed lone pairs of electrons. This is confirmed through density functional theory, having a direct impact on the electronic structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics

Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.

42 ENGINEERING↗
DOE OSTI2024

Structural mode coupling in perovskite oxides using hypothesis-driven active learning

Abstract Finding the ground-state structure with minimum energy is paramount to designing any material. In ABO 3 -type perovskite oxides with Pnma symmetry, the lowest energy phase is driven by an inherent trilinear coupling between the two primary order parameters such as rotation and tilt with antiferroelectric displacement of the A-site cations as established via hybrid improper ferroelectric mechanism. Conventionally, finding the relevant mode coupling driving phase transition requires performing first-principles calculations which is computationally time-consuming as well as expensive. It involves following an intuitive iterative hit and trial method of (a) adding two or multiple mode vectors, followed by (b) evaluating which combination would lead to the ground-state energy. In this study, we show how a hypothesis-driven active learning framework can identify suitable mode couplings within the Landau free energy expansion with minimal information on amplitudes of modes for a series of double perovskite oxides with A-site layered, columnar and rocksalt ordering. This scheme is expected to be applicable universally for understanding atomistic mechanisms derived from various structural mode couplings behind functionalities, for e.g. polarization, magnetization and metal–insulator transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Mapping causal pathways with structural modes fingerprint for perovskite oxides

Abstract Causality is innate to the determination of the fundamental mechanism controlling any physical phenomena. However, combining causality within the standard practices of computational modelling to understand structure-functionality connections is extremely rare. This work proposes a fingerprint based on key structural modes for ABO 3 -type perovskite oxides and its derivatives, combined with causal models, for predicting Kohn–Sham energies. Our study of causal models captures the inherent coupling between structural modes such as rotation, tilt and antiferroelectric displacements, responsible for phase transition, polarization, magnetization and metal–insulator transition, exhibited by these materials. Although developed for modelling specific functionality, this method is universally applicable to derive other functionalities and even different material classes while tracking hidden causal mechanisms via structural distortions.

42 ENGINEERING↗
DOE OSTI2023

Designing polar textures with ultrafast neuromorphic features from atomistic simulations

This review summarizes recent works, all using a specific atomistic approach, that predict and explain the occurrence of key features for neuromorphic computing in three archetypical dipolar materials, when they are subject to THz excitations. The main ideas behind such atomistic approach are provided, and illustration of model relaxor ferroelectrics, antiferroelectrics, and normal ferroelectrics are given, highlighting the important potential of polar materials as candidates for neuromorphic computing. Some peculiar emphases are made in this Review, such as the connection between neuromorphic features and percolation theory, local minima in energy path, topological transitions and/or anharmonic oscillator model, depending on the material under investigation. By considering three different and main polar material families, this work provides a complete and innovative toolbox for designing polar-based neuromorphic systems.

THz pulses↗