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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.

Physics↗
DOE OSTI2020

AFM Microcantilever With a Collocated AlN Sensor-Actuator Pair: Enabling Efficient Q-Control for Dynamic Imaging

This manuscript presents a novel microcantilever with an embedded piezoelectric sensor-actuator pair for dynamic atomic force microscopy (AFM). The transducer pair is constructed from a two-layered AlN stack. Stacking the piezoelectric transducers in this manner leads to a minimal feedthrough from actuation to sense electrode, granting a high dynamic range frequency response for dynamic mode AFM. The cantilever's design allows for dual mode operation at 1 st and 2 nd resonance modes. High resolution tapping mode imaging results are reported, while the cantilever is operated at these modes. A feedback control loop is used to modify quality factor of the 1 st mode of the cantilever, using a positive position feedback (PPF) controller. Here, a faster response time is achieved by reducing the Q-factor, enabling the cantilever to track the topography at a higher scan rate. Results of bimodal AFM imaging are reported, using amplitude changes of the 1 st mode for surface topography, while material properties are encoded in phase changes of the 2 nd mode.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Quadratic strong coupling in AlN Kerr cavity solitons

Photonic platforms with χ (2) nonlinearity offer new degrees of freedom for Kerr frequency comb development. Here, we demonstrate Kerr soliton generation at 1550 nm with phase-matched quadratic coupling to the 775 nm harmonic band in a single AlN microring and thus the formation of dual-band mode-locked combs. In the strong quadratic coupling regime where the χ (2) phase-matching window overlaps the pump mode, the pump-to-harmonic-comb conversion efficiency is optimized. However, the strong quadratic coupling also drastically modifies the Kerr comb generation dynamics and decreases the probability of soliton generation. By engineering the χ (2) phase-matching wavelength, we are able to achieve a balance between high conversion efficiency and high soliton formation rate under the available pump power and microring quality factors. Our numerical simulations confirm the experimental observations. These findings provide guidance on tailoring single-cavity dual-band coherent comb sources.

Gong, Zheng (ORCID:0000000301704870)↗
DOE OSTI2025

Microwave dielectric properties of LiNbO$_{\mathbf{3}}$ and AlN at millikelvin temperatures and single-photon power

Electro-optic materials are paramount to achieving efficient and reliable microwave-optical signal transduction in the quantum regime. It is of great interest to investigate the performance of these materials at the quantum level and at cryogenic temperatures to assess their compatibility with superconducting circuit-based quantum systems. In this work, we present a detailed study of the microwave electric properties of single-crystal bulk LiNbO$_{3}$ and AlN at millikelvin temperatures and at the single-photon level. We characterize the materials' dielectric loss tangent throughout a wide range of electromagnetic power levels in a temperature range from a few tens of millikelvin to above 1~K. Our findings indicate that both materials' loss tangent behavior is consistent with the two-level system model up to a certain power threshold, beyond which it increases logarithmically with power. This suggests that two-level system loss mechanisms dominate at the single-photon level, while additional loss channels become relevant at higher powers and temperatures.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

High figure of merit extreme bandgap Al 0.87 Ga 0.13 N-Al 0.64 Ga 0.36 N heterostructures over bulk AlN substrates

We report on high-quality n -Al 0.87 Ga 0.13 N-A 0.64 Ga 0.36 N heterostructures over single crystal AlN. For these pseudomorphic heterostructures, high-resolution X-ray and X-ray Topographic analysis was used to establish a threading dislocation density of 7 × 10 3 cm -2 . Using reverse composition graded n + -Al x Ga 1- x N contact layers, we obtained linear ohmic contacts with 4.3 Ω mm specific resistance. A critical breakdown field >11 MV cm -1 was also measured. In combination with the channel resistance of 2400 Ω sq -1 , these translate to a Baliga’s Figure of Merit of 2.27 GW cm -2 . This, to the best of our knowledge is the highest reported value for extreme bandgap AlGaN heterostructures.

42 ENGINEERING↗
NASA NTRS1994

Waveguide-coupled resonator filters on AlN on silicon

In the effort to continually reduce the size and cost of wireless communications products the level of integration has improved dramatically in recent years. In order to reduce future generations of wireless systems to single chip form, there is a need for on-chip filtering capabilities. In this paper, the first report of an experimental waveguide-coupled resonator filter for cellular radio applications is presented. Measured results indicate a typical insertion loss of 26 dB at a center frequency of 132 MHz using a 2 um AlN film on (001) less than 110 greater than Si. In addition, a laser probe analysis has been conducted and a theoretical analysis of the first order reflection coefficients is presented.

Liaw, H. M.↗
NASA NTRS2006

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗
DOE OSTI2022

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking. We report the charge control and transport properties of polarization-induced 2D electron gases (2DEGs) in strained AlGaN quantum well channels in molecular-beam-epitaxy-grown AlN/Al x Ga 1-x N/AlN double heterostructures by systematically varying the Al content from x = 0 (GaN) to x = 0.74, spanning energy bandgaps of the conducting HEMT channels from 3.49 to 4.9 eV measured by photoluminescence. This results in a tunable 2DEG density from 0 to 3.7 × 10 13 cm 2 . The room temperature mobilities of x ≥ 0.25 AlGaN channel HEMTs were limited by alloy disorder scattering to below 50 cm 2 /(V.s) for these 2DEG densities, leaving ample room for further heterostructure design improvements to boost mobilities. A characteristic alloy fluctuation energy of ≥1.8 eV for electron scattering in AlGaN alloy is estimated based on the temperature dependent electron transport experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Ferroelectric Fractals: Switching Mechanism of Wurtzite AlN

The advent of wurtzite ferroelectrics is enabling new ferroelectric devices for computer memory that have the potential to bypass the von Neumann bottleneck due to their robust polarization and silicon compatibility. However, the atomistic switching mechanism of wurtzites is still undetermined due to the limitations of density functional theory simulation size and experimental temporal and spatial resolution. Thus, physics-informed materials engineering to reduce coercive field and breakdown in these devices has been limited. In this work, the atomistic mechanism of domain wall migration and domain growth in aluminum nitride-based wurtzites is uncovered using molecular dynamics and Monte Carlo simulations. We reveal the anomalous switching mechanism of fast 1D single columns of atoms propagating from a slow-moving 2D fractallike domain wall. We find that the critical nucleus is a single aluminum ion that breaks its bond with one nitrogen and bonds to another nitrogen; this creates a cascade that flips atoms directly only in the same column, due to the extreme locality (sharpness) of the domain walls in wurtzites. We further show how the fractallike shape of the domain wall in the 2D plane breaks assumptions in the Kolmogorov, Avrami, and Ishibashi (KAI) model and leads to the anomalously fast switching in wurtzite structured ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Interface-independent sound speed and thermal conductivity of atomic-layer-deposition-grown amorphous AlN / Al 2 O 3 multilayers with varying oxygen composition

Dielectric amorphous multilayers (AMLs) play a critical role in a wide array of technologies such as optical coatings, nanoelectronics, energy harvesting, and recovery devices. However, despite their wide applications, a robust understanding of the effect of the interplay between chemical and structural disorder on the thermal properties of AMLs is still lacking. Therefore, in this paper, we experimentally and numerically investigate the effects of composition and interface density on the sound speed and thermal conductivity of a series of amorphous aluminum nitride and aluminum oxide multilayers grown via plasma-enhanced atomic layer deposition. To systematically change the composition, the oxygen content of the AMLs is proportionally varied with interface density during growth. We find that the longitudinal sound speed of these AMLs is dictated by the oxygen content instead of the number of interfaces. The thermal conductivity, in contrast, is dictated by both interface density and oxygen content. The interfaces act to decrease the thermal conductivity, whereas the oxygen content increases the thermal conductivity. Due to the competing influence of the interfaces and oxygen content, the thermal conductivity of the AMLs remains nearly constant as a function of interface density. Furthermore, our study provides crucial insights into the effect of the interplay of composition and interfaces on the sound speed and thermal conductivity of AMLs.

36 MATERIALS SCIENCE↗