Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “AlAs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Terrestrial analogs of the Hellespontus dunes, Mars

Geomorphic features in the Hellespontus region, Mars, were compared with dunes of the crescentic ridge type in numerous terrestrial sand seas quantitatively by dimensional analysis of dune lengths, widths, and wavelengths. Mean values for the Hellespontus dunes are close to mean values derived from measurements of all sampled terrestrial sand seas. Terrestrial analogs of form and areal distribution of the Hellespontus dunes are shown by comparison of scale ratios derived from the measurements. Dunes of similar form occur in South West Africa, in Pakistan, in the southeastern Arabian peninsula, in the Sahara, in eastern USSR and northern China, and in western North America. Terrestrial analogs closest to form and areal distribution of the Hellespontus dunes are in the Kara Kum Desert, Turkmen SSR, and in the Ala Shan (Gobi) Desert, China.

Breed, C. S.↗
NASA NTRS1979

Optimum bandgap of several III-V heterojunction solar cells

Results of computer analysis of AlAs/Ga(1-x)As n-on-p heterojunction solar cells are presented with particular consideration given to interface recombination effects. It is found that, for an AlAs window layer, GaAs appears to be the optimum semiconductor for the active layer. Furthermore, even if the interface recombination is neglected, GaAs comes so close to being the optimum III-V active layer material that the additional effort required to incorporate a few percent of InAs into the active layer appears to be much greater than any expected efficiency increase.

Sutherland, J. E.↗
NASA NTRS1963

Launch Vehicle Flight Report - Nasa Project Apollo Little Joe 2 Qualification Test Vehicle 12-50-1

The Little Joe II Qualification Test Vehicle, Model 12-50-1, was launched from Army Launch Area 3 {ALA-3) at White Sands Missile Range, New Mexico, on 28 August 1963. This was the first launch of this class of boosters. The Little Joe II Launch Vehicle was designed as a test vehicle for boosting payloads into flight. For the Apollo Program, its mission is to serve as a launch vehicle for flight testing of the Apollo spacecraft. Accomplishment of this mission requires that the vehicle be capable of boosting the Apollo payload to parameters ranging from high dynamic pressures at low altitude to very high altitude flight. The fixed-fin 12-50 version was designed to accomplish the low-altitude parameter. The 12-51 version incorporates an attitude control system to accomplish the high altitude mission. This launch was designed to demonstrate the Little Joe II capability of meeting the high dynamic pressure parameter for the Apollo Program. For this test, a boiler-plate version of the Apollo capsule, service module and escape tower were attached to the launch vehicle to simulate weight, center of gravity and aerodynamic shape of the Apollo configuration. No attempt was made to separate the payload in flight. The test was conducted in compliance with Project Apollo Flight Mission Directive for QTV-1, NASA-MSC, dated 3 June 1963, under authority of NASA Contract NAS 9-492,

Source record↗
NASA NTRS1982

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

Vonroos, O. H.↗
NASA NTRS1982

The 1982 NASA/ASEE summer faculty fellowship research program

Aht NASA/ASEE Summer Faculty Fellowship Research Program conducted at the Marshall Space Flight Center by the University of Alabama at Huntsville, Ala. during the summer of 1982 is described. Abstracts of the Final Reports submitted by the Fellows detailing the results of their research are also presented.

Source record↗
NASA NTRS1987

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Brown, E. R.↗
NASA NTRS1987

Index of refraction of GaAs-Al(x)Ga(1-x)As superlattices and multiple quantum wells

A theoretical study of the index of refraction of superlattices and its variation as a function of frequency and the superlattice parameters, i.e., layer width and AlAs composition, is presented. Gamma-region exciton and valence-band mixing effects are included in the model. It is found that these two effects have an important influence on the value of the index of refraction and that superstructure effects rapidly decrease for energies greater than the superlattice potential barriers. Because of the quasi-two-dimensional character of the Gamma-region excitons, the results indicate that the superlattice index of refraction can vary by about two percent at the quantized, bound-exciton, transition energies. Overall, the theoretical results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS1988

Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates

A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2.

Evans, Gary A.↗
NASA NTRS1988

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Jones, Stephen H.↗
NASA NTRS1990

Peeled film GaAs solar cells for space power

Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

Wilt, D. M.↗
NASA NTRS1990

Peeled film GaAs solar cell development

Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

Wilt, D. M.↗
NASA NTRS1994

Effect of the degree of disorder on electronic and optical properties in random superlattices

A three-dimensional tight-binding calculation is developed and used to study disorder effects in a realistic random superlattice. With increasing disorder, a tendency of possible indirect-direct band-gap transition is suggested. Direct evidence of mobility edges between localized and extended states in three-dimensional random systems is given. As system disorder increases, the optical absorption intensities increase dramatically from five to forty-five times stronger than the ordered (GaAs)(sub 1)/(AlAs)(sub 1) superlattice. It is believed that the degree of disorder significantly affects electronic and optical properties of GaAs/AlAs random superlattices.

Wang, E. G.↗
NASA NTRS1995

High efficient radiation stable AlGaAs/GaAs solar cells with internal Bragg reflector

An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.

Andreev, V. M.↗
NASA NTRS1994

Three-dimensional structure of Schistosoma japonicum glutathione S-transferase fused with a six-amino acid conserved neutralizing epitope of gp41 from HIV

The 3-dimensional crystal structure of glutathione S-transferase (GST) of Schistosoma japonicum (Sj) fused with a conserved neutralizing epitope on gp41 (glycoprotein, 41 kDa) of human immunodeficiency virus type 1 (HIV-1) was determined at 2.5 A resolution. The structure of the 3-3 isozyme rat GST of the mu gene class was used as a molecular replacement model. The structure consists of a 4-stranded beta-sheet and 3 alpha-helices in domain 1 and 5 alpha-helices in domain 2. The space group of the Sj GST crystal is P4(sub 3)2(sub 1)2 with unit cell dimensions of a = b = 94.7 A, and c = 58.1 A. The crystal has 1 GST monomer per asymmetric unit, and 2 monomers that form an active dimer are related by crystallographic 2-fold symmetry. In the binding site, the ordered structure of reduced glutathione is observed. The gp41 peptide (Glu-Leu-Asp-Lys-Trp-Ala) fused to the C-terminus of Sj GST forms a loop stabilized by symmetry-related GSTs. The Sj GST structure is compared with previously determined GST structures of mammalian gene classes mu, alpha, and pi. Conserved amino acid residues among the 4 GSTs that are important for hydrophobic and hydrophilic interactions for dimer association and glutathione binding are discussed.

Lim, Kap↗
NASA NTRS1993

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗
NASA NTRS1982

Effect of the Angiotensin I Converting Enzyme Inhibitor, MK-421, on Experimentally Induced Drinking

MK-421, the ethyl ester maleate salt of N-(S)-1-(ethoxycarbonyl)-3-phenyl-propyl- Ala-L-Pro, is an angiotensin I converting enzyme inhibitor. An initial objective was to determine whether MK-421, administered at 0, 2.5, 5.0, 10.0, 20.0 and 40.0 mg/kg, ip to 96 female rats 15 min prior to administration of the beta-adrenergic agonist, isoproterenol (25 microgram/kg, ip), would inhibit the drinking induced by isoproterenol during 2 h after its administration. The water intake induced by isoproterenol was inhibited significantly by 2.5 mg MK-421/kg. When a similar experiment was performed using Angiotensin I (AI) (200 microgram/kg, ip) as the dipsogenic agent, MK-421 (5 mg/kg, ip), administered 15 min prior to AI, inhibited significantly both the dipsogenic and the diuretic effect of AI. However, administration of angiotensin II (AII, 200 microgram/kg, ip) 15 min after MK-421 (5mg/kg) was accompanied by a water intake that did not differ from AII alone. The drink induced by ip administration of 1.0 m NaCl solution (1% of body wt, ip) was not inhibited by administration of MK-421 (5 mg/kg) 15 min prior to allowing access to water while the drink induced by a 24 h dehydration was partially inhibited. Thus, the drinks induced by administraition of either isoproterenol or AI are dependent on formation of AII. That induced by dehydration is partially dependent, while that induced by hypertonic siilinc is independent of the formation of AII.

Fregley, Melvin J.↗
NASA NTRS1999

Rocket-Based Combined Cycle Activities in the Advanced Space Transportation Program Office

NASA's Office of Aero-Space Technology (OAST) has established three major goals, referred to as, "The Three Pillars for Success". The Advanced Space Transportation Program Office (ASTP) at the NASA's Marshall Space Flight Center (MSFC) in Huntsville, Ala. focuses on future space transportation technologies Under the "Access to Space" pillar. The Core Technologies Project, part of ASTP, focuses on the reusable technologies beyond those being pursued by X-33. One of the main activities over the past two and a half years has been on advancing the rocket-based combined cycle (RBCC) technologies. In June of last year, activities for reusable launch vehicle (RLV) airframe and propulsion technologies were initiated. These activities focus primarily on those technologies that support the decision to determine the path this country will take for Space Shuttle and RLV. This year, additional technology efforts in the reusable technologies will be awarded. The RBCC effort that was completed early this year was the initial step leading to flight demonstrations of the technology for space launch vehicle propulsion.

Hueter, Uwe↗
NASA NTRS1998

Propulsion/ASME Rocket-Based Combined Cycle Activities in the Advanced Space Transportation Program Office

NASA's Office Of Aeronautics and Space Transportation Technology (OASTT) has establish three major coals. "The Three Pillars for Success". The Advanced Space Transportation Program Office (ASTP) at the NASA's Marshall Space Flight Center in Huntsville,Ala. focuses on future space transportation technologies under the "Access to Space" pillar. The Advanced Reusable Technologies (ART) Project, part of ASTP, focuses on the reusable technologies beyond those being pursued by X-33. The main activity over the past two and a half years has been on advancing the rocket-based combined cycle (RBCC) technologies. In June of last year, activities for reusable launch vehicle (RLV) airframe and propulsion technologies were initiated. These activities focus primarily on those technologies that support the year 2000 decision to determine the path this country will take for Space Shuttle and RLV. In February of this year, additional technology efforts in the reusable technologies were awarded. The RBCC effort that was completed early this year was the initial step leading to flight demonstrations of the technology for space launch vehicle propulsion. Aerojet, Boeing-Rocketdyne and Pratt & Whitney were selected for a two-year period to design, build and ground test their RBCC engine concepts. In addition, ASTROX, Pennsylvania State University (PSU) and University of Alabama in Huntsville also conducted supporting activities. The activity included ground testing of components (e.g., injectors, thrusters, ejectors and inlets) and integrated flowpaths. An area that has caused a large amount of difficulty in the testing efforts is the means of initiating the rocket combustion process. All three of the prime contractors above were using silane (SiH4) for ignition of the thrusters. This follows from the successful use of silane in the NASP program for scramjet ignition. However, difficulties were immediately encountered when silane (an 80/20 mixture of hydrogen/silane) was used for rocket ignition.

Hueter, Uwe↗